Product specification WPM2341A P-Channel Enhancement Mode Mosfet Features z Higher Efficiency Extending Battery Life z Miniature SOT23-3 Surface Mount Package z Super high density cell design for extremely low RDS (ON) 3 1 Applications 2 zDC/DC Converter zLoad Switch zBattery Powered System z zLCD Display inverter zPower Management in Portable, Battery Powered Products SOT 23-3 pin connections : PïChannel ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Steady Parameter Symbol Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±12 Continuous Drain Current a (TJ = 150 °C) TA=25°C TA=80°C Pulsed Drain Current IS (Diode Conduction) a Dissipation a TA=25°C TA=80°C Operating Junction and Storage Temperature Range PD State -3.5 -3.2 -2.5 G 1 3 S -1.7 -1 1.25 0.75 Top View Marking: Drain 3 W41U W G 0.42 2 1 TJ, Tstg - 55 to 150 D 2 A -20 0.7 Unit V -4.3 IDM Continuous Source Current Maximum Power ID 5s Gate °C Source W 41= Specific Device Code a. Surface Mounted on FR4 Board using 1 in sq pad size,2oz Cu. U = Date Code Order information PartNumber WPM2341AͲ3/TR http://www.twtysemi.com Package SOT23-3 Shipping [email protected] 3000Tape&Reel 1 of 2 Product specification WPM2341A THERMAL RESISTANCE RATINGS Parameter Symbol Junction-to-Ambient Thermal Resistance b t5s Steady State Typical Maximum 75 100 125 165 RșJA Unit °C/W b. Surface Mounted on FR4 Board using 1 in sq pad size, 2oz Cu. MOSFET ELECTRICAL CHARACTERISTICS(TJ =25 ć unless otherwise specified) Parameter Symbol Test Condition Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS = 0V,ID = -250ȝA Zero Gate Voltage Drain Current IDSS VDS =-16V,VGS = 0V Gate –Source leakage current IGSS VGS = f12 V ,VDS = 0V On Characteristics Gate Threshold Voltage VGS(th) VGS = VDS, ID =-250ȝA Static Drain-Source VGS = -4.5V, ID = -3.3A RDS(on) On-Resistance VGS = -2.5V,ID = -2.8 A Forward Transconductance gFS VDS = -5 V, ID = -3.3A Dynamic Characteristics Input Capacitance Ciss VDS = -6 V, VGS = 0V, Output Capacitance Coss f = 1.0 MHz Reverse Transfer Capacitance Crss Switching Characteristics Turn-On Delay Time td(on) Turn-On Rise Time tr VGS = -4.5V, VDD = -6 V, ID = -1.0A, RG=6.0ȍ, Turn-Off Delay Time td(off) Turn-Off Fall Time tf Total Gate Charge QG(TOT) Threshold gate charge QG(TH) VDS = -6 V,ID = -3.3A, VGS =-4.5V Gate-Source Charge QGS Gate-Drain Charge QGD Drain-Source Diode Characteristics and Maximun Ratings Forward Diode Voltage VSD VGS = 0V,IS = -1.6A http://www.twtysemi.com [email protected] Min Typ Max Units -1 f100 V ȝA nA -20 -0.35 -0.63 52 65 3.0 8 0.2 1.2 2.2 -0.8 -1.00 61 71 V mȍ mȍ S 700 160 120 pF pF pF 25 55 90 60 13 ns ns ns ns nC nC nC nC V 2 of 2