FDMC7672 N-Channel Power Trench® MOSFET 30 V, 16.9 A, 5.7 mΩ Features General Description Max rDS(on) = 5.7 mΩ at VGS = 10 V, ID = 16.9 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Max rDS(on) = 7.0 mΩ at VGS = 4.5 V, ID = 15.0 A High performance technology for extremely low rDS(on) Termination is Lead-free and RoHS Compliant Application DC - DC Buck Converters Notebook battery power management Load switch in Notebook Top Bottom Pin 1 S D D D S S G S D S D S D G D D MLP 3.3x3.3 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous TC = 25 °C -Continuous TA = 25 °C ID TJ, TSTG ±20 V (Note 1a) 16.9 A 50 Single Pulse Avalanche Energy PD Units V 20 -Pulsed EAS Ratings 30 (Note 3) Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 144 33 (Note 1a) Operating and Storage Junction Temperature Range 2.3 -55 to +150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 3.7 (Note 1a) 53 °C/W Package Marking and Ordering Information Device Marking FDMC7672 Device FDMC7672 ©2010 Fairchild Semiconductor Corporation FDMC7672 Rev.C5 Package MLP 3.3x3.3 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMC7672 N-Channel Power Trench® MOSFET June 2014 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current 30 V 13 VDS = 24 V, VGS = 0 V mV/°C 1 TJ = 125 °C 250 VGS = 20 V, VDS = 0 V μA 100 nA 3.0 V On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C rDS(on) gFS Static Drain to Source On Resistance Forward Transconductance 1.2 1.9 -6 mV/°C VGS = 10 V, ID = 16.9 A 4.3 5.7 VGS = 4.5 V, ID = 15.0 A 5.4 7.0 VGS = 10 V, ID = 16.9 A TJ = 125 °C 5.5 6.9 VDD = 5 V, ID = 16.9 A 82 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 15 V, VGS = 0 V, f = 1 MHz 2925 3890 pF 1050 1400 pF 80 120 pF 0.9 2.7 Ω 13 24 ns Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) VDD = 15 V, ID = 16.9 A, VGS = 10 V, RGEN = 6 Ω 6 12 ns 31 49 ns 5 10 ns Total Gate Charge VGS = 0 V to 10 V 40 57 nC Total Gate Charge VGS = 0 V to 4.5 V VDD = 15 V ID = 16.9 A 18 24 Qgs Total Gate Charge Qgd Gate to Drain “Miller” Charge nC 9 nC 4 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 16.9 A (Note 2) 0.83 1.2 VGS = 0 V, IS = 1.9 A (Note 2) 0.72 1.2 39 62 ns 18 32 nC IF = 16.9 A, di/dt = 100 A/μs V NOTES: 1: RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. b.125 °C/W when mounted on a minimum pad of 2 oz copper a. 53 °C/W when mounted on a 1 in2 pad of 2 oz copper 2: Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %. 3. EAS of 144 mJ is based on starting TJ = 25 oC, L = 1 mH, IAS = 17 A, VDD = 27 V, VGS = 10 V. ©2010 Fairchild Semiconductor Corporation FDMC7672 Rev.C5 2 www.fairchildsemi.com FDMC7672 N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 50 VGS = 6 V 40 VGS = 4.5 V VGS = 4 V 30 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 20 VGS = 3.5 V VGS = 3 V 10 0 0.0 0.5 1.0 4.5 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) VGS = 10 V 3.5 3.0 VGS = 4 V 2.5 2.0 VGS = 4.5 V 1.5 1.0 0 10 20 40 50 Figure 2. Normalized On-Resistance vs. Drain Current and Gate Voltage 1.6 20 rDS(on), DRAIN TO ID = 16.9 A VGS = 10 V 1.2 1.0 0.8 0.6 -75 -50 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 30 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics ID = 16.9 A PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 15 10 TJ = 125 oC 5 TJ = 25 oC 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs. Junction Temperature Figure 4. On-Resistance vs. Gate to Source Voltage 100 50 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 40 ID, DRAIN CURRENT (A) VGS = 10 V VGS = 6 V 0.5 1.5 VDS, DRAIN TO SOURCE VOLTAGE (V) 1.4 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VGS = 3.5 V 4.0 VDS = 5 V 30 20 TJ = 150 oC TJ = 25 oC 10 TJ = -55 oC 0 1 2 3 VGS = 0 V 10 1 TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.001 0.0 4 TJ = 150 oC 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs. Source Current ©2010 Fairchild Semiconductor Corporation FDMC7672 Rev.C5 3 1.2 www.fairchildsemi.com FDMC7672 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 5000 ID = 16.9 A 8 VDD = 10 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 15 V 6 VDD = 20 V 4 2 Ciss 1000 Coss 100 f = 1 MHz VGS = 0 V 0 0 9 18 27 36 45 Figure 7. Gate Charge Characteristics 10 30 Figure 8. Capacitance vs. Drain to Source Voltage 70 20 60 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 1 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 10 TJ = 25 oC TJ = 125 TJ = 100 oC oC 50 40 VGS = 10 V 30 VGS = 4.5 V 20 10 o Limited by Package 1 0.01 0.1 1 10 0 25 100 200 P(PK), PEAK TRANSIENT POWER (W) 100 μs 10 1 ms 0.1 10 ms 100 ms SINGLE PULSE TJ = MAX RATED 1s 10 s RθJA = 125 oC/W DC TA = 25 oC 0.01 0.01 0.1 1 10 100 200 VDS, DRAIN to SOURCE VOLTAGE (V) 125 150 2000 1000 VGS = 10 V 100 10 SINGLE PULSE RθJA = 125 oC/W 1 TA = 25 oC 0.5 -4 -3 -2 10 10 10 -1 10 1 100 10 1000 t, PULSE WIDTH (sec) Figure 11. Forward Bias Safe Operating Area ©2010 Fairchild Semiconductor Corporation FDMC7672 Rev.C5 100 Figure 10. Maximum Continuous Drain Current vs. Case Temperature 70 THIS AREA IS LIMITED BY rDS(on) 75 Tc, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability 1 50 RθJC = 4.0 C/W o tAV, TIME IN AVALANCHE (ms) ID, DRAIN CURRENT (A) Crss 50 0.1 Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDMC7672 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.01 t1 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA o 0.001 0.0005 -4 10 RθJA = 125 C/W -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Transient Thermal Response Curve ©2010 Fairchild Semiconductor Corporation FDMC7672 Rev.C5 5 www.fairchildsemi.com FDMC7672 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted FDMC7672 N-Channel Power Trench® MOSFET Dimensional Outline and Pad Layout Package drawings are provided as a service to customers considering Fairchild components. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Definition Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I68 ©2010 Fairchild Semiconductor Corporation FDMC7672 Rev.C5 7 www.fairchildsemi.com FDMC7672 N-Channel Power Trench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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