Data Sheet - Fairchild Semiconductor

FDMC7672
N-Channel Power Trench® MOSFET
30 V, 16.9 A, 5.7 mΩ
Features
General Description
„ Max rDS(on) = 5.7 mΩ at VGS = 10 V, ID = 16.9 A
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench® process that has
been especially tailored to minimize the on-state resistance. This
device is well suited for Power Management and load switching
applications common in Notebook Computers and Portable
Battery Packs.
„ Max rDS(on) = 7.0 mΩ at VGS = 4.5 V, ID = 15.0 A
„ High performance technology for extremely low rDS(on)
„ Termination is Lead-free and RoHS Compliant
Application
„ DC - DC Buck Converters
„ Notebook battery power management
„ Load switch in Notebook
Top
Bottom
Pin 1
S
D
D
D
S
S
G
S
D
S
D
S
D
G
D
D
MLP 3.3x3.3
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current -Continuous
TC = 25 °C
-Continuous
TA = 25 °C
ID
TJ, TSTG
±20
V
(Note 1a)
16.9
A
50
Single Pulse Avalanche Energy
PD
Units
V
20
-Pulsed
EAS
Ratings
30
(Note 3)
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
144
33
(Note 1a)
Operating and Storage Junction Temperature Range
2.3
-55 to +150
mJ
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
3.7
(Note 1a)
53
°C/W
Package Marking and Ordering Information
Device Marking
FDMC7672
Device
FDMC7672
©2010 Fairchild Semiconductor Corporation
FDMC7672 Rev.C5
Package
MLP 3.3x3.3
1
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
www.fairchildsemi.com
FDMC7672 N-Channel Power Trench® MOSFET
June 2014
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
30
V
13
VDS = 24 V, VGS = 0 V
mV/°C
1
TJ = 125 °C
250
VGS = 20 V, VDS = 0 V
μA
100
nA
3.0
V
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA, referenced to 25 °C
rDS(on)
gFS
Static Drain to Source On Resistance
Forward Transconductance
1.2
1.9
-6
mV/°C
VGS = 10 V, ID = 16.9 A
4.3
5.7
VGS = 4.5 V, ID = 15.0 A
5.4
7.0
VGS = 10 V, ID = 16.9 A
TJ = 125 °C
5.5
6.9
VDD = 5 V, ID = 16.9 A
82
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 15 V, VGS = 0 V,
f = 1 MHz
2925
3890
pF
1050
1400
pF
80
120
pF
0.9
2.7
Ω
13
24
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg(TOT)
VDD = 15 V, ID = 16.9 A,
VGS = 10 V, RGEN = 6 Ω
6
12
ns
31
49
ns
5
10
ns
Total Gate Charge
VGS = 0 V to 10 V
40
57
nC
Total Gate Charge
VGS = 0 V to 4.5 V VDD = 15 V
ID = 16.9 A
18
24
Qgs
Total Gate Charge
Qgd
Gate to Drain “Miller” Charge
nC
9
nC
4
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 16.9 A
(Note 2)
0.83
1.2
VGS = 0 V, IS = 1.9 A
(Note 2)
0.72
1.2
39
62
ns
18
32
nC
IF = 16.9 A, di/dt = 100 A/μs
V
NOTES:
1: RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
b.125 °C/W when mounted on
a minimum pad of 2 oz copper
a. 53 °C/W when mounted on
a 1 in2 pad of 2 oz copper
2: Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.
3. EAS of 144 mJ is based on starting TJ = 25 oC, L = 1 mH, IAS = 17 A, VDD = 27 V, VGS = 10 V.
©2010 Fairchild Semiconductor Corporation
FDMC7672 Rev.C5
2
www.fairchildsemi.com
FDMC7672 N-Channel Power Trench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
50
VGS = 6 V
40
VGS = 4.5 V
VGS = 4 V
30
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
20
VGS = 3.5 V
VGS = 3 V
10
0
0.0
0.5
1.0
4.5
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
VGS = 10 V
3.5
3.0
VGS = 4 V
2.5
2.0
VGS = 4.5 V
1.5
1.0
0
10
20
40
50
Figure 2. Normalized On-Resistance
vs. Drain Current and Gate Voltage
1.6
20
rDS(on), DRAIN TO
ID = 16.9 A
VGS = 10 V
1.2
1.0
0.8
0.6
-75
-50
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
30
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics
ID = 16.9 A
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
15
10
TJ = 125 oC
5
TJ = 25 oC
0
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On- Resistance
vs. Junction Temperature
Figure 4. On-Resistance vs. Gate to
Source Voltage
100
50
IS, REVERSE DRAIN CURRENT (A)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
40
ID, DRAIN CURRENT (A)
VGS = 10 V
VGS = 6 V
0.5
1.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
1.4
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 3.5 V
4.0
VDS = 5 V
30
20
TJ = 150 oC
TJ = 25 oC
10
TJ = -55 oC
0
1
2
3
VGS = 0 V
10
1
TJ = 25 oC
0.1
TJ = -55 oC
0.01
0.001
0.0
4
TJ = 150 oC
0.2
0.4
0.6
0.8
1.0
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs. Source Current
©2010 Fairchild Semiconductor Corporation
FDMC7672 Rev.C5
3
1.2
www.fairchildsemi.com
FDMC7672 N-Channel Power Trench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
5000
ID = 16.9 A
8
VDD = 10 V
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE (V)
10
VDD = 15 V
6
VDD = 20 V
4
2
Ciss
1000
Coss
100 f = 1 MHz
VGS = 0 V
0
0
9
18
27
36
45
Figure 7. Gate Charge Characteristics
10
30
Figure 8. Capacitance vs. Drain
to Source Voltage
70
20
60
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT (A)
1
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
10
TJ = 25 oC
TJ = 125
TJ = 100 oC
oC
50
40
VGS = 10 V
30
VGS = 4.5 V
20
10
o
Limited by Package
1
0.01
0.1
1
10
0
25
100 200
P(PK), PEAK TRANSIENT POWER (W)
100 μs
10
1 ms
0.1
10 ms
100 ms
SINGLE PULSE
TJ = MAX RATED
1s
10 s
RθJA = 125 oC/W
DC
TA = 25 oC
0.01
0.01
0.1
1
10
100 200
VDS, DRAIN to SOURCE VOLTAGE (V)
125
150
2000
1000
VGS = 10 V
100
10
SINGLE PULSE
RθJA = 125 oC/W
1 TA = 25 oC
0.5
-4
-3
-2
10
10
10
-1
10
1
100
10
1000
t, PULSE WIDTH (sec)
Figure 11. Forward Bias Safe
Operating Area
©2010 Fairchild Semiconductor Corporation
FDMC7672 Rev.C5
100
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
70
THIS AREA IS
LIMITED BY rDS(on)
75
Tc, CASE TEMPERATURE ( C)
Figure 9. Unclamped Inductive
Switching Capability
1
50
RθJC = 4.0 C/W
o
tAV, TIME IN AVALANCHE (ms)
ID, DRAIN CURRENT (A)
Crss
50
0.1
Figure 12. Single Pulse Maximum
Power Dissipation
4
www.fairchildsemi.com
FDMC7672 N-Channel Power Trench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
2
NORMALIZED THERMAL
IMPEDANCE, ZθJA
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
0.01
t1
t2
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
o
0.001
0.0005
-4
10
RθJA = 125 C/W
-3
10
-2
10
-1
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Transient Thermal Response Curve
©2010 Fairchild Semiconductor Corporation
FDMC7672 Rev.C5
5
www.fairchildsemi.com
FDMC7672 N-Channel Power Trench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
FDMC7672 N-Channel Power Trench® MOSFET
Dimensional Outline and Pad Layout
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
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Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_MLDEU-C08
©2010 Fairchild Semiconductor Corporation
FDMC7672 Rev.C5
6
www.fairchildsemi.com
tm
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Datasheet contains the design specifications for product development. Specifications
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First Production
Datasheet contains preliminary data; supplementary data will be published at a later
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Rev. I68
©2010 Fairchild Semiconductor Corporation
FDMC7672 Rev.C5
7
www.fairchildsemi.com
FDMC7672 N-Channel Power Trench® MOSFET
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