FAIRCHILD FDMC8622

FDMC8622
N-Channel Power Trench® MOSFET
100 V, 16 A, 56 m:
Features
General Description
„ Max rDS(on) = 56 m: at VGS = 10 V, ID = 4 A
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench® process that has
been optimized for rDS(on), switching performance and
ruggedness.
„ Max rDS(on) = 90 m: at VGS = 6 V, ID = 3 A
„ High performance trench technology for extremely low rDS(on)
„ High power and current handling capability in a widely used
surface mount package
Application
„ 100% UIL Tested
„ DC-DC Primary Switch
„ Termination is Lead-free and RoHS Compliant
D
D
D
D
S
S
S
G
D
5
4
G
D
6
3
S
D
7
2
S
D
8
1
S
MLP 3.3X3.3
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current -Continuous (Package limited)
ID
TJ, TSTG
±20
V
16
-Continuous (Silicon limited)
TC = 25 °C
16
-Continuous
TA = 25 °C
4
-Pulsed
PD
Units
V
TC = 25 °C
A
30
Single Pulse Avalanche Energy
EAS
Ratings
100
(Note 3)
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
37
31
(Note 1a)
Operating and Storage Junction Temperature Range
2.5
-55 to +150
mJ
W
°C
Thermal Characteristics
RTJC
Thermal Resistance, Junction to Case
RTJA
Thermal Resistance, Junction to Ambient
(Note 1)
4.0
(Note 1a)
50
°C/W
Package Marking and Ordering Information
Device Marking
FDMC8622
Device
FDMC8622
©2012 Fairchild Semiconductor Corporation
FDMC8622 Rev.C2
Package
MLP 3.3X3.3
1
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
www.fairchildsemi.com
FDMC8622 N-Channel Power Trench® MOSFET
September 2012
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 PA, VGS = 0 V
'BVDSS
'TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 PA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
VDS = 80 V, VGS = 0 V
1
PA
IGSS
Gate to Source Leakage Current
VGS = ±20 V, VDS = 0 V
±100
nA
4
V
100
V
69
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 PA
'VGS(th)
'TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 PA, referenced to 25 °C
VGS = 10 V, ID = 4 A
43.7
56
rDS(on)
Static Drain to Source On Resistance
VGS = 6 V, ID = 3 A
59.9
90
VGS = 10 V, ID = 4 A, TJ = 125 °C
76.4
98
VDD = 10 V, ID = 4 A
8.9
VDS = 50 V, VGS = 0 V,
f = 1 MHz
302
402
pF
72.5
96
pF
4.2
6
pF
gFS
Forward Transconductance
2
2.9
-9
mV/°C
m:
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
:
1.0
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg(TOT)
5.9
12
1.6
10
ns
ns
10.2
18
ns
VDD = 50 V, ID = 4 A,
VGS = 10 V, RGEN = 6 :
2.2
10
ns
Total Gate Charge
VGS = 0 V to 10 V
5.2
7.3
nC
Qg(TOT)
Total Gate Charge
VGS = 0 V to 5 V
3.0
4.1
Qgs
Total Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDD = 50 V,
ID = 4 A
nC
1.4
nC
1.4
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 4 A
VGS = 0 V, IS = 1.7 A
IF = 4 A, di/dt = 100 A/Ps
(Note 2)
(Note 2)
0.8
1.3
0.8
1.2
V
36
57
ns
28
45
nC
NOTES:
1. RTJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTCA is determined by
the user's board design.
a. 50 °C/W when mounted on a
1 in2 pad of 2 oz copper
b. 125 °C/W when mounted on
a minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0%.
3. Starting TJ = 25 °C; N-ch: L = 3.0 mH, IAS = 5.0 A, VDD = 100 V, VGS = 10 V.
©2012 Fairchild Semiconductor Corporation
FDMC8622 Rev.C2
2
www.fairchildsemi.com
FDMC8622 N-Channel Power Trench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
4
VGS = 10 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
30
VGS = 7 V
ID, DRAIN CURRENT (A)
25
VGS = 6.5 V
20
VGS = 6 V
15
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
10
VGS = 5 V
5
0
0
1
2
3
VDS, DRAIN TO SOURCE VOLTAGE (V)
3
VGS = 6 V
2
0
4
VGS = 10 V
VGS = 7 V
0
5
10
15
20
ID, DRAIN CURRENT(A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
2.0
0.5
ID = 4 A
1.8 V = 10 V
GS
rDS(on), DRAIN TO
1.6
1.4
1.2
1.0
0.8
SOURCE ON-RESISTANCE (m:)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
VGS = 6.5 V
1
Figure 1. On-Region Characteristics
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
0.4
ID = 4 A
0.3
0.2
TJ = 125 oC
0.1
TJ = 25 oC
0.6
-75
-50
-25
0
25
50
75
0.0
100 125 150
2
4
TJ, JUNCTION TEMPERATURE (oC)
30
IS, REVERSE DRAIN CURRENT (A)
VDS = 5 V
20
15
TJ = 150 oC
TJ = 25 oC
5
TJ =
0
3
-55 oC
6
VGS = 0 V
10
TJ = 150 oC
TJ = 25 oC
1
TJ = -55 oC
0.1
0.4
9
VGS, GATE TO SOURCE VOLTAGE (V)
0.6
0.8
1.0
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
©2012 Fairchild Semiconductor Corporation
FDMC8622 Rev.C2
10
40
25
0
8
Figure 4. On-Resistance vs Gate to
Source Voltage
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
10
6
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On- Resistance
vs Junction Temperature
ID, DRAIN CURRENT (A)
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
VGS = 5 V
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
3
www.fairchildsemi.com
FDMC8622 N-Channel Power Trench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
1000
ID = 4 A
VDD = 25 V
8
Ciss
VDD = 50 V
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE(V)
10
6
VDD = 75 V
4
100
Coss
10
2
0
0
1
2
3
4
5
1
0.1
6
1
Figure 7. Gate Charge Characteristics
100
Figure 8. Capacitance vs Drain
to Source Voltage
5
20
4
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT(A)
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE(nC)
TJ = 25 oC
3
TJ = 100 oC
2
TJ = 125 oC
15
VGS = 10 V
10
Limited by Package
VGS = 6 V
5
o
RTJC = 4.0 C/W
1
0.01
0.1
1
0
25
10
50
100
125
150
o
Figure 9. Unclamped Inductive
Switching Capability
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
1000
10
P(PK), PEAK TRANSIENT POWER (W)
100
1
75
TC, CASE TEMPERATURE ( C)
tAV, TIME IN AVALANCHE(ms)
I D , DRAIN CURRENT (A)
Crss
f = 1 MHz
VGS = 0 V
100 Ps
THIS AREA IS
LIMITED BY r DS(on)
0.1
0.01
1 ms
10 ms
100 ms
1s
10 s
DC
SINGLE PULSE
TJ = MAX RATED
RTJA = 125 oC/W
TA = 25 o C
0.001
0.01
0.1
1
10
100
500
SINGLE PULSE
RTJA = 125o C/W
TA = 25 oC
100
10
1
0.5
-4
10
-3
10
-2
10
-1
10
1
100
10
1000
t, PULSE WIDTH (s)
VDS , DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
©2012 Fairchild Semiconductor Corporation
FDMC8622 Rev.C2
VGS = 10 V
Figure 12. Single Pulse Maximum
Power Dissipation
4
www.fairchildsemi.com
FDMC8622 N-Channel Power Trench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
2
NORMALIZED THERMAL
IMPEDANCE, ZTJA
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
0.01
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZTJA x RTJA + TA
SINGLE PULSE
o
RTJA = 125 C/W
0.0001
-4
10
-3
10
-2
10
-1
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
©2012 Fairchild Semiconductor Corporation
FDMC8622 Rev.C2
5
www.fairchildsemi.com
FDMC8622 N-Channel Power Trench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
FDMC8622 N-Channel Power Trench® MOSFET
Dimensional Outline and Pad Layout
©2012 Fairchild Semiconductor Corporation
FDMC8622 Rev.C2
6
www.fairchildsemi.com
tm
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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As used here in:
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2.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Definition
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I61
©2012 Fairchild Semiconductor Corporation
FDMC8622 Rev.C2
7
www.fairchildsemi.com
FDMC8622 N-Channel Power Trench® MOSFET
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