FDMC86244 N-Channel Power Trench® MOSFET 150 V, 9.4 A, 134 mΩ Features General Description Max rDS(on) = 134 mΩ at VGS = 10 V, ID = 2.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Max rDS(on) = 186 mΩ at VGS = 6 V, ID = 2.4 A Low Profile - 1 mm max in Power 33 100% UIL Tested RoHS Compliant Application DC - DC Conversion Bottom Top 8 1 7 6 D D D D 5 D 5 4 G D 6 3 S D 7 2 S D 8 1 S G S S S 2 3 4 MLP 3.3x3.3 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous TC = 25°C -Continuous TA = 25°C ID TJ, TSTG ±20 V (Note 1a) 2.8 A 12 Single Pulse Avalanche Energy PD Units V 9.4 -Pulsed EAS Ratings 150 (Note 3) Power Dissipation TC = 25°C Power Dissipation TA = 25°C 12 26 (Note 1a) Operating and Storage Junction Temperature Range 2.3 -55 to + 150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case 4.7 RθJA Thermal Resistance, Junction to Ambient (Note 1a) 125 °C/W Package Marking and Ordering Information Device Marking FDMC86244 Device FDMC86244 ©2012 Fairchild Semiconductor Corporation FDMC86244 Rev.C1 Package Power 33 1 Reel Size 13’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMC86244 N-Channel Power Trench® MOSFET February 2012 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 120 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 4 V 150 V 106 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C VGS = 10 V, ID = 2.8 A 105 134 rDS(on) Static Drain to Source On Resistance VGS = 6 V, ID = 2.4 A 120 186 VGS = 10 V, ID = 2.8 A, TJ = 125 °C 199 254 gFS Forward Transconductance 2 VDD = 10 V, ID = 2.8 A 2.6 -9 mV/°C 8 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 75 V, VGS = 0 V, f = 1 MHz 257 345 pF 32 45 pF 1.8 5 pF ns Switching Characteristics td(on) Turn-On Delay Time 5.3 11 tr Rise Time 10 ns td(off) Turn-Off Delay Time VDD = 75 V, ID = 2.8 A, VGS = 10 V, RGEN = 6 Ω 1.5 9.9 20 ns tf Fall Time 2.3 10 ns Qg(TOT) Total Gate Charge VGS = 0 V to 10 V 4.2 5.9 nC Qg(TOT) Total Gate Charge VGS = 0 V to 5 V 2.4 3.4 Qgs Total Gate Charge Qgd Gate to Drain “Miller” Charge VDD = 75 V, ID = 2.8 A 1.1 nC 1.0 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 2.8 A (Note 2) 0.81 1.3 VGS = 0 V, IS = 2 A (Note 2) 0.79 1.2 IF = 2.8 A, di/dt = 100 A/μs V 48 76 ns 38 61 nC NOTES: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 53 °C/W when mounted on a 1 in2 pad of 2 oz copper b. 125 °C/W when mounted on a minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. Starting TJ = 25 °C; N-ch: L = 1.0 mH, IAS = 5.0 A, VDD = 135 V, VGS = 10 V. ©2012 Fairchild Semiconductor Corporation FDMC86244 Rev.C1 2 www.fairchildsemi.com FDMC86244 N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 5 VGS = 6 V VGS = 10 V VGS = 5 V VGS = 5.5 V ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 12 9 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 6 VGS = 4.5 V 3 0 VGS = 4 V 0 1 2 3 4 VGS = 4 V VGS = 5 V 3 2 VGS = 5.5 V 1 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 5 0 3 6 9 12 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage Figure 1. On Region Characteristics 2.4 500 ID = 2.8 A VGS = 10 V 2.2 2.0 rDS(on), DRAIN TO 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -75 -50 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10 V VGS = 6 V ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) IS, REVERSE DRAIN CURRENT (A) VDS = 5 V TJ = 150 oC 6 TJ = 25 oC 3 TJ = -55 oC 0 5 TJ = 125 oC 200 100 TJ = 25 oC 20 10 1 4 6 8 10 VGS = 0 V TJ = 150 oC TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.001 0.2 6 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V) Figure 6. Source to Drain Diode Forward Voltage vs Source Current Figure 5. Transfer Characteristics ©2012 Fairchild Semiconductor Corporation FDMC86244 Rev.C1 300 Figure 4. On-Resistance vs Gate to Source Voltage 9 4 ID = 2.8 A VGS, GATE TO SOURCE VOLTAGE (V) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 3 400 2 12 2 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 3. Normalized On Resistance vs Junction Temperature ID, DRAIN CURRENT (A) VGS = 4.5 V 4 3 www.fairchildsemi.com FDMC86244 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted VGS, GATE TO SOURCE VOLTAGE (V) 10 1000 VDD = 50 V ID = 2.8 A CAPACITANCE (pF) 8 VDD = 75 V 6 VDD = 100 V 4 Ciss 100 Coss 10 2 f = 1 MHz VGS = 0 V 0 0 1 2 3 4 Crss 1 0.1 5 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 10 10 o 8 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) RθJC = 4.7 C/W TJ = 25 oC 6 TJ = 100 oC 4 TJ = 125 oC 8 VGS = 10 V 6 VGS = 6 V 4 2 2 1 0.001 0.01 0.1 1 0 25 2 50 P(PK), PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A) 150 1000 100 μs 1 1 ms 10 ms THIS AREA IS LIMITED BY rDS(on) 100 ms SINGLE PULSE TJ = MAX RATED 1s 10 s RθJA = 125 oC/W DC TA = 25 oC 0.001 0.1 125 Figure 10. Maximum Continuous Drain Current vs Case Temperature 20 10 0.01 100 o Figure 9. Unclamped Inductive Switching Capability 0.1 75 TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) 1 10 100 500 10 SINGLE PULSE RθJA = 125 oC/W TA = 25 oC 1 0.5 -4 10 -3 10 -2 10 -1 10 1 100 10 1000 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area ©2012 Fairchild Semiconductor Corporation FDMC86244 Rev.C1 100 Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDMC86244 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 0.001 -4 10 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 125 C/W -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2012 Fairchild Semiconductor Corporation FDMC86244 Rev.C1 5 www.fairchildsemi.com FDMC86244 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted FDMC86244 N-Channel Power Trench® MOSFET Dimensional Outline and Pad Layout ©2012 Fairchild Semiconductor Corporation FDMC86244 Rev.C1 6 www.fairchildsemi.com tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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