FAIRCHILD FDMC8296_10

FDMC8296
N-Channel Power Trench® MOSFET
30V, 18A, 8.0m:
Features
General Description
„ Max rDS(on) = 8.0m: at VGS = 10V, ID = 12A
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench® process that has
been especially tailored to minimize the on-state resistance. This
device is well suited for Power Management and load switching
applications common in Notebook Computers and Portable
Battery Packs.
„ Max rDS(on) = 13.0m: at VGS = 4.5V, ID = 10A
„ High performance trench technology for extremely low rDS(on)
„ Termination is Lead-free and RoHS Compliant
Application
„ DC - DC Buck Converter
„ Notebook battery power management
„ Load switch in Notebook
Bottom
Top
Pin 1
S
S
S
G
D
D
D
D
D
5
4
G
D
6
3
S
D
7
2
S
D
8
1
S
MLP 3.3x3.3
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current -Continuous (Package limited)
ID
TC = 25°C
-Continuous (Silicon limited)
TC = 25°C
-Continuous
TA = 25°C
PD
TJ, TSTG
Units
V
±20
V
18
44
(Note 1a)
12
(Note 3)
72
-Pulsed
A
52
Single Pulse Avalanche Energy
EAS
Ratings
30
Power Dissipation
TC = 25°C
Power Dissipation
TA = 25°C
27
(Note 1a)
Operating and Storage Junction Temperature Range
2.3
-55 to +150
mJ
W
°C
Thermal Characteristics
RTJC
Thermal Resistance, Junction to Case
RTJA
Thermal Resistance, Junction to Ambient
4.6
(Note 1a)
53
°C/W
Package Marking and Ordering Information
Device Marking
FDMC8296
Device
FDMC8296
©2010 Fairchild Semiconductor Corporation
FDMC8296 Rev.C1
Package
MLP 3.3X3.3
1
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
www.fairchildsemi.com
FDMC8296 N-Channel Power Trench® MOSFET
September 2010
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250PA, VGS = 0V
'BVDSS
'TJ
Breakdown Voltage Temperature
Coefficient
30
ID = 250PA, referenced to 25°C
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
V
17
mV/°C
VDS = 24V,
VGS = 0V,
1
TJ = 125°C
250
VGS = ±20V, VDS = 0V
PA
±100
nA
3.0
V
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250PA
'VGS(th)
'TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250PA, referenced to 25°C
rDS(on)
Static Drain to Source On Resistance
gFS
Forward Transconductance
1.0
1.9
-6
mV/°C
VGS = 10V, ID = 12A
6.5
8.0
VGS = 4.5V, ID = 10A
9.5
13.0
VGS = 10V, ID = 12A, TJ = 125°C
9.0
12.8
VDD = 5V, ID = 12A
44
m:
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 15V, VGS = 0V,
f = 1MHz
f = 1MHz
1038
1385
pF
513
685
pF
87
135
pF
:
0.9
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg(TOT)
Total Gate Charge
Qgs
Total Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDD = 15V, ID = 12A,
VGS = 10V, RGEN = 6:
9
18
ns
3
10
ns
19
35
ns
2
10
ns
VGS = 0V to 10V
16
23
nC
VGS = 0V to 4.5V VDD = 15V,
ID = 12A
7.6
10.6
nC
3
nC
2.5
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, IS = 12A
(Note 2)
VGS = 0V, IS = 1.9A
(Note 2)
IF = 12A, di/dt = 100A/Ps
0.82
1.3
0.73
1.2
V
25
45
ns
9
18
nC
NOTES:
1. RTJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTCA is determined by
the user's board design.
b.125 °C/W when mounted on
a minimum pad of 2 oz copper
a. 53 °C/W when mounted on
a 1 in2 pad of 2 oz copper
2. Pulse Test: Pulse Width < 300Ps, Duty cycle < 2.0%.
3.E AS of 72 mJ is based on starting T = 25 C, L = 1 mH, IAS = 12 A, V DD = 27 V, VGS = 10 V. 100% test at L = 3 mH, IAS = 5.7 A.
©2010 Fairchild Semiconductor Corporation
FDMC8296 Rev.C1
2
www.fairchildsemi.com
FDMC8296 N-Channel Power Trench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
50
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
6
VGS = 10V
ID, DRAIN CURRENT (A)
40
VGS = 4.5V
VGS = 3.5V
30
VGS = 4V
20
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
10
VGS = 3V
0
0
1
2
3
4
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
5
VGS = 3V
4
VGS = 3.5V
3
VGS = 4V
1
VGS = 10V
0
5
0
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
rDS(on), DRAIN TO
1.4
1.2
1.0
0.8
-25
0
25
50
75
100 125
TJ, JUNCTION TEMPERATURE (oC)
SOURCE ON-RESISTANCE (m:)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
40
50
50
ID = 12A
VGS = 10V
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
40
ID = 12A
30
20
TJ = 125oC
10
TJ = 25oC
0
150
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On- Resistance
vs Junction Temperature
Figure 4. On-Resistance vs Gate to
Source Voltage
50
IS, REVERSE DRAIN CURRENT (A)
50
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
40
ID, DRAIN CURRENT (A)
30
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.8
0.6
-50
20
ID, DRAIN CURRENT(A)
Figure 1. On-Region Characteristics
1.6
VGS = 4.5V
2
VDS = 5V
30
20
TJ = 150oC
TJ = 25oC
10
TJ = -55oC
0
1
2
3
4
VGS = 0V
10
TJ = 150oC
1
TJ = 25oC
0.1
TJ = -55oC
0.01
0.001
0.0
5
0.2
0.4
0.6
0.8
1.0
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2010 Fairchild Semiconductor Corporation
FDMC8296 Rev.C1
3
1.2
www.fairchildsemi.com
FDMC8296 N-Channel Power Trench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
3000
ID = 12A
Ciss
8
1000
VDD = 10V
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE(V)
10
VDD = 15V
6
VDD = 20V
4
Coss
100
f = 1MHz
VGS = 0V
2
0
0
3
6
9
12
15
30
0.1
18
1
Figure 7. Gate Charge Characteristics
30
Figure 8. Capacitance vs Drain
to Source Voltage
50
ID, DRAIN CURRENT (A)
30
IAS, AVALANCHE CURRENT(A)
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE(nC)
10
TJ = 25oC
TJ = 125oC
40
VGS = 10V
30
VGS = 4.5V
20
10
Limited by Package
1
0.01
0.1
1
10
0
25
100
50
tAV, TIME IN AVALANCHE(ms)
o
RTJC = 4.6 C/W
75
100
125
150
o
TC, CASE TEMPERATURE ( C)
Figure 9. Unclamped Inductive
Switching Capability
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
200
P(PK), PEAK TRANSIENT POWER (W)
100
ID, DRAIN CURRENT (A)
Crss
10
1ms
1
10ms
THIS AREA IS
LIMITED BY rDS(on)
100ms
SINGLE PULSE
TJ = MAX RATED
0.1
1s
10s
o
RTJA = 125 C/W
DC
o
TA = 25 C
0.01
0.01
0.1
1
10
100
SINGLE PULSE
RTJA = 125oC/W
VGS = 10V
TA = 25oC
10
1
0.5
-3
10
-2
10
-1
10
1
10
100
1000
t, PULSE WIDTH (s)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
©2010 Fairchild Semiconductor Corporation
FDMC8296 Rev.C1
100
Figure 12. Single Pulse Maximum
Power Dissipation
4
www.fairchildsemi.com
FDMC8296 N-Channel Power Trench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
2
NORMALIZED THERMAL
IMPEDANCE, ZTJA
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZTJA x RTJA + TA
o
RTJA = 125 C/W
0.01
0.005
-3
10
-2
10
-1
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Transient Thermal Response Curve
©2010 Fairchild Semiconductor Corporation
FDMC8296 Rev.C1
5
www.fairchildsemi.com
FDMC8296 N-Channel Power Trench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
FDMC8296 N-Channel Power Trench® MOSFET
Dimensional Outline and Pad Layout
©2010 Fairchild Semiconductor Corporation
FDMC8296 Rev.C1
6
www.fairchildsemi.com
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Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
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Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
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The datasheet is for reference information only.
Rev. I48
©2010 Fairchild Semiconductor Corporation
FDMC8296 Rev.C1
7
www.fairchildsemi.com
FDMC8296 N-Channel Power Trench® MOSFET
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