FSV12100V
12 A, 100 V Ultra-Low VF Schottky Rectifier
Features
•
•
•
•
•
•
•
•
Ultra-Low Forward Voltage Drop
Low Thermal Resistance
Very Low Profile: Typical Height of 1.1 mm
Trench Schottky Technology
RoHS Compliant
Green Molding Compound as per IEC61249 Standard
Lead Free in Compliance with EU RoHS 2011/65/EU Directive
Qualified per AEC-Q101 Rev. C Standard
3
2
TO-277
1
Anode 1
3
Anode 2
Cathode
Ordering Information
Part Number
Top Mark
Package
Packing Method
FSV12100V
FSV12100V
TO-277 3L
Tape and Reel
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Value
Unit
VRRM
Peak Repetitive Reverse Voltage
100
V
VRWM
Working Peak Reverse Voltage
100
V
VRMS
RMS Reverse Voltage
70
V
DC Blocking Voltage
100
V
Average Rectified Peak Forward Surge Current
12
A
VR
IF(AV)
IFSM
TJ
TSTG
Parameter
Non-Repetitive Peak Forward Surge Current
220
A
Operating Junction Temperature Range
-55 to +150
°C
Storage Temperature Range
-55 to +150
°C
© 2015 Fairchild Semiconductor Corporation
FSV12100V Rev. 1.2
www.fairchildsemi.com
FSV12100V — 12 A, 100 V Ultra-Low VF Schottky Rectifier
September 2015
Values are at TA = 25°C unless otherwise noted.
Symbol
RθJA
ψJL
Minimum
Maximum
Land Pattern Land Pattern
Parameter
Junction-to-Ambient Thermal Resistance
100
40
Junction-to-Lead Thermal Characteristics,
Thermocouple Soldered to Anode
15
12
Junction-to-Lead Thermal Characteristics,
Thermocouple Soldered to Cathode
6
Unit
°C/W
°C/W
5
Note:
1. The thermal resistances (RθJA & ψJL) are characterized with device mounted on the following FR4 printed circuit
boards, as shown in Figure 1 and Figure 2. PCB size: 76.2 x 114.3 mm. Minimum land pattern size: 4.9 x 4.8 mm
(big pattern, x1), 1.4 x 1.52 mm (small pattern, x2). Maximum land pattern size: 30 x 30 mm (pattern, x2).
Force line trace size = 55 mils, sense line trace size = 4 mils.
F
S
F
S
F
S
F
S
F
S
Figure 1. Minimum Land Pattern of 2 oz Copper
Figure 2. Maximum Land Pattern of 2 oz Copper
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
BVR
VF
Parameter
Breakdown Voltage
Forward Voltage Drop
Conditions
IR = 0.5 mA
Min.
Typ.
Max.
100
Unit
V
IF = 5 A
0.485
IF = 5 A, TA = 125°C
0.418
IF = 12 A
0.598
0.670
IF = 12 A, TA = 125°C
0.564
0.600
VR = 70 V
0.0084
VR = 70 V, TA = 125°C
9.485
VR = 100 V
0.0225
0.10
20
V
mA
IR
Reverse Current
VR = 100 V, TA = 125°C
16.56
CJ
Junction Capacitance
VR = 4 V, f = 1 MHz
1124
pF
Trr
Reverse Recovery Time
IF = 0.5 A, IR = 1 A, Irr = 0.25 A
27.33
ns
© 2015 Fairchild Semiconductor Corporation
FSV12100V Rev. 1.2
www.fairchildsemi.com
2
FSV12100V — 12 A, 100 V Ultra-Low VF Schottky Rectifier
Thermal Characteristics(1)
100000
Forward Voltage, VF [V]
0.7
Reverse Current, IR [μA]
10000
o
o
TA=150 C
1000
TA= 125 C
o
TA= 75 C
100
10
o
TA= 25 C
1
TA= -55 C
20
30
0.5
TA= 25 C
0.4
0.3
o
TA= 75 C
0.2
o
TA= 125 C
o
TA= 150 C
40 50 60 70 80
Reverse Voltage, VR [V]
90
0.0
0.01
100
0.1
1
10
Forward Current, IF [A]
Figure 3. Typical Reverse Characteristics
Figure 4. Typical Forward Characteristics
2500
300
Peak Forward Surge Current [A]
Junction Capacitance, CJ [pF]
o
TA= -55 C
o
0.1
o
0.1
10
0.6
2000
1500
1000
500
0
0.1
1
10
Reverse Voltage, VR [V]
250
200
150
100
50
0
100
Figure 5. Typical Junction Capacitance
1
10
Number of Cycles
100
Figure 6. Maximum Non-repetitive Peak Forward
Surge Current
Average Forward Current, IF [A]
14
TL (Cathode, 3cm x 3cm Pad)
12
10
8
TA (3cm x 3cm Pad)
6
4
2
0
0
25
50
75
100
125
150
o
Ambient / Lead Temperature, [ C]
175
Figure 7. Forward Current Derating Curve
© 2015 Fairchild Semiconductor Corporation
FSV12100V Rev. 1.2
www.fairchildsemi.com
3
FSV12100V — 12 A, 100 V Ultra-Low VF Schottky Rectifier
Typical Performance Characteristics
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Figure 8. 3-LEAD, TO277, JEDEC, SURFACE MOUNT
© 2015 Fairchild Semiconductor Corporation
FSV12100V Rev. 1.2
www.fairchildsemi.com
4
FSV12100V — 12 A, 100 V Ultra-Low VF Schottky Rectifier
Physical Dimensions
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Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
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Obsolete
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change
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Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I76
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