J211 / MMBFJ211 N-Channel RF Amplifier Description This device is designed for HF/VHF mixer/amplifier and applications where process 50 is not adequate. Sufficient gain and low-noise for sensitive receivers. Sourced from process 90. G TO-92 12 3 Straight Lead Bulk Packing 1 2 1. Drain 2. Source 3. Gate S SOT-23 D Note: Source & Drain are interchangeable 3 Bent Lead Tape & Reel Ammo Packing Figure 1. J211 Device Package Figure 2. MMBFJ211 Device Package Ordering Information Part Number Top Mark Package Packing Method J211_D74Z J211 TO-92 3L Ammo MMBFJ211 62W SOT-23 3L Tape and Reel © 1997 Fairchild Semiconductor Corporation J211 / MMBFJ211 Rev. 1.4 www.fairchildsemi.com J211 / MMBFJ211 — N-Channel RF Amplifier September 2015 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit VDG Drain-Gate Voltage 25 V VGS Gate-Source Voltage -25 V IGF Forward Gate Current 10 mA -55 to 150 °C TJ, TSTG Operating and Storage Junction Temperature Range Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operations. Thermal Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Max. Parameter (3) J211 MMBFJ211(3) Unit Total Device Dissipation 350 225 mW Derate Above 25°C 2.8 1.8 mW/°C RθJC Thermal Resistance, Junction-to-Case 125 RθJA Thermal Resistance, Junction-to-Ambient 357 PD °C/W 556 °C/W Note: 3. Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead minimum 6cm2. Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Max. Unit Off Characteristics V(BR)GSS IGSS VGS(off) Gate-Source Breakdown Voltage IG = 1.0 μA, VDS = 0 Gate Reverse Current VGS = 15 V, VDS = 0 Gate-Source Cut-Off Voltage VDS = 15 V, ID = 1.0 nA -25 V -100 pA -2.5 -4.5 V 7.0 20 mA 7000 12000 μmhos 200 μmhos On Characteristics IDSS Zero-Gate Voltage Drain Current(4) VDS = 15 V, VGS = 0 Small Signal Characteristics gfs goss Common Source Forward Transconductance VDS = 15 V, VGS = 0, f = 1.0 kHz Common Source Output Conductance VDS = 15 V, VGS = 0, f = 1.0 kHz Note: 4. Pulse test: pulse width ≤ 300 μs © 1997 Fairchild Semiconductor Corporation J211 / MMBFJ211 Rev. 1.4 www.fairchildsemi.com 2 J211 / MMBFJ211 — N-Channel RF Amplifier Absolute Maximum Ratings(1), (2) Figure 3. Parameter Interactions Figure 4. Common Drain-Source Figure 5. Transfer Characteristics Figure 6. Transfer Characteristics Figure 7. Leakage Current vs. Voltage Figure 8. Noise Voltage vs. Frequency © 1997 Fairchild Semiconductor Corporation J211 / MMBFJ211 Rev. 1.4 www.fairchildsemi.com 3 J211 / MMBFJ211 — N-Channel RF Amplifier Typical Performance Characteristics Figure 9. Transconductance vs. Drain Current Figure 10. Output Conductance vs. Drain Current Figure 11. Capacitance vs. Voltage © 1997 Fairchild Semiconductor Corporation J211 / MMBFJ211 Rev. 1.4 www.fairchildsemi.com 4 J211 / MMBFJ211 — N-Channel RF Amplifier Typical Performance Characteristics (Continued) os) Figure 12. Input Admittance Figure 13. Forward Transadmittance Figure 14. Output Admittance Figure 15. Reverse Transadmittance © 1997 Fairchild Semiconductor Corporation J211 / MMBFJ211 Rev. 1.4 www.fairchildsemi.com 5 J211 / MMBFJ211 — N-Channel RF Amplifier Common Source Characteristics Figure 16. Input Admittance Figure 17. Forward Transadmittance Figure 18. Output Admittance Figure 19. Reverse Transadmittance © 1997 Fairchild Semiconductor Corporation J211 / MMBFJ211 Rev. 1.4 www.fairchildsemi.com 6 J211 / MMBFJ211 — N-Channel RF Amplifier Common Gate Characteristics J211 / MMBFJ211 — N-Channel RF Amplifier Physical Dimensions Figure 20. 3-Lead, TO-92, Molded, 0.2 In Line Spacing Lead Form © 1997 Fairchild Semiconductor Corporation J211 / MMBFJ211 Rev. 1.4 www.fairchildsemi.com 7 J211 / MMBFJ211 — N-Channel RF Amplifier Physical Dimensions (Continued) 0.95 2.92±0.20 3 1.40 1.30+0.20 -0.15 1 2.20 2 0.60 0.37 (0.29) 0.95 0.20 1.00 A B 1.90 1.90 LAND PATTERN RECOMMENDATION SEE DETAIL A 1.20 MAX 0.10 0.00 (0.93) 0.10 C C 2.40±0.30 NOTES: UNLESS OTHERWISE SPECIFIED GAGE PLANE 0.23 0.08 A) REFERENCE JEDEC REGISTRATION TO-236, VARIATION AB, ISSUE H. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE INCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR EXTRUSIONS. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 1994. E) DRAWING FILE NAME: MA03DREV10 0.25 0.20 MIN (0.55) SEATING PLANE SCALE: 2X Figure 21. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE © 1997 Fairchild Semiconductor Corporation J211 / MMBFJ211 Rev. 1.4 www.fairchildsemi.com 8 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I77 © Fairchild Semiconductor Corporation www.fairchildsemi.com