J211 MMBFJ211 - N-Channel RF Amplifier

J211 / MMBFJ211
N-Channel RF Amplifier
Description
This device is designed for HF/VHF mixer/amplifier
and applications where process 50 is not adequate.
Sufficient gain and low-noise for sensitive receivers.
Sourced from process 90.
G
TO-92
12
3
Straight Lead
Bulk Packing
1
2
1. Drain
2. Source
3. Gate
S
SOT-23
D
Note: Source & Drain
are interchangeable
3
Bent Lead
Tape & Reel
Ammo Packing
Figure 1. J211 Device Package
Figure 2. MMBFJ211 Device Package
Ordering Information
Part Number
Top Mark
Package
Packing Method
J211_D74Z
J211
TO-92 3L
Ammo
MMBFJ211
62W
SOT-23 3L
Tape and Reel
© 1997 Fairchild Semiconductor Corporation
J211 / MMBFJ211 Rev. 1.4
www.fairchildsemi.com
J211 / MMBFJ211 — N-Channel RF Amplifier
September 2015
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
VDG
Drain-Gate Voltage
25
V
VGS
Gate-Source Voltage
-25
V
IGF
Forward Gate Current
10
mA
-55 to 150
°C
TJ, TSTG
Operating and Storage Junction Temperature Range
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Max.
Parameter
(3)
J211
MMBFJ211(3)
Unit
Total Device Dissipation
350
225
mW
Derate Above 25°C
2.8
1.8
mW/°C
RθJC
Thermal Resistance, Junction-to-Case
125
RθJA
Thermal Resistance, Junction-to-Ambient
357
PD
°C/W
556
°C/W
Note:
3. Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead minimum 6cm2.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
Max.
Unit
Off Characteristics
V(BR)GSS
IGSS
VGS(off)
Gate-Source Breakdown Voltage
IG = 1.0 μA, VDS = 0
Gate Reverse Current
VGS = 15 V, VDS = 0
Gate-Source Cut-Off Voltage
VDS = 15 V, ID = 1.0 nA
-25
V
-100
pA
-2.5
-4.5
V
7.0
20
mA
7000
12000
μmhos
200
μmhos
On Characteristics
IDSS
Zero-Gate Voltage Drain Current(4) VDS = 15 V, VGS = 0
Small Signal Characteristics
gfs
goss
Common Source Forward
Transconductance
VDS = 15 V, VGS = 0,
f = 1.0 kHz
Common Source Output
Conductance
VDS = 15 V, VGS = 0,
f = 1.0 kHz
Note:
4. Pulse test: pulse width ≤ 300 μs
© 1997 Fairchild Semiconductor Corporation
J211 / MMBFJ211 Rev. 1.4
www.fairchildsemi.com
2
J211 / MMBFJ211 — N-Channel RF Amplifier
Absolute Maximum Ratings(1), (2)
Figure 3. Parameter Interactions
Figure 4. Common Drain-Source
Figure 5. Transfer Characteristics
Figure 6. Transfer Characteristics
Figure 7. Leakage Current vs. Voltage
Figure 8. Noise Voltage vs. Frequency
© 1997 Fairchild Semiconductor Corporation
J211 / MMBFJ211 Rev. 1.4
www.fairchildsemi.com
3
J211 / MMBFJ211 — N-Channel RF Amplifier
Typical Performance Characteristics
Figure 9. Transconductance vs. Drain Current
Figure 10. Output Conductance vs. Drain Current
Figure 11. Capacitance vs. Voltage
© 1997 Fairchild Semiconductor Corporation
J211 / MMBFJ211 Rev. 1.4
www.fairchildsemi.com
4
J211 / MMBFJ211 — N-Channel RF Amplifier
Typical Performance Characteristics (Continued)
os)
Figure 12. Input Admittance
Figure 13. Forward Transadmittance
Figure 14. Output Admittance
Figure 15. Reverse Transadmittance
© 1997 Fairchild Semiconductor Corporation
J211 / MMBFJ211 Rev. 1.4
www.fairchildsemi.com
5
J211 / MMBFJ211 — N-Channel RF Amplifier
Common Source Characteristics
Figure 16. Input Admittance
Figure 17. Forward Transadmittance
Figure 18. Output Admittance
Figure 19. Reverse Transadmittance
© 1997 Fairchild Semiconductor Corporation
J211 / MMBFJ211 Rev. 1.4
www.fairchildsemi.com
6
J211 / MMBFJ211 — N-Channel RF Amplifier
Common Gate Characteristics
J211 / MMBFJ211 — N-Channel RF Amplifier
Physical Dimensions
Figure 20. 3-Lead, TO-92, Molded, 0.2 In Line Spacing Lead Form
© 1997 Fairchild Semiconductor Corporation
J211 / MMBFJ211 Rev. 1.4
www.fairchildsemi.com
7
J211 / MMBFJ211 — N-Channel RF Amplifier
Physical Dimensions (Continued)
0.95
2.92±0.20
3
1.40
1.30+0.20
-0.15
1
2.20
2
0.60
0.37
(0.29)
0.95
0.20
1.00
A B
1.90
1.90
LAND PATTERN
RECOMMENDATION
SEE DETAIL A
1.20 MAX
0.10
0.00
(0.93)
0.10
C
C
2.40±0.30
NOTES: UNLESS OTHERWISE SPECIFIED
GAGE PLANE
0.23
0.08
A) REFERENCE JEDEC REGISTRATION
TO-236, VARIATION AB, ISSUE H.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE INCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR EXTRUSIONS.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M - 1994.
E) DRAWING FILE NAME: MA03DREV10
0.25
0.20 MIN
(0.55)
SEATING
PLANE
SCALE: 2X
Figure 21. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE
© 1997 Fairchild Semiconductor Corporation
J211 / MMBFJ211 Rev. 1.4
www.fairchildsemi.com
8
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Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
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changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I77
© Fairchild Semiconductor Corporation
www.fairchildsemi.com