BAS31 Small Signal Diode Connection Diagram 3 3 3 L21 2 1 1 2 1 2 SOT-23 Ordering Information Part Number Top Mark Package Packing Method BAS31 L21 SOT-23 3L Tape and Reel, 7 inch Reel, 3000 pcs BAS31_D87Z L21 SOT-23 3L Tape and Reel, 13 inch Reel, 10000 pcs Absolute Maximum Ratings(1), (2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage 120 V IF(AV) Average Rectified Forward Current 200 mA IFSM Non-Repetitive Peak Forward Surge Current TSTG Storage Temperature Range TJ Operating Junction Temperature Pulse Width = 1.0 second 1.0 Pulse Width = 1.0 microsecond 2.0 A -55 to +150 °C 150 °C Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operations. © 2001 Fairchild Semiconductor Corporation BAS31 Rev. 1.3 www.fairchildsemi.com BAS31 — Small Signal Diode February 2015 Values are at TA = 25°C unless otherwise noted. Symbol PD RθJA Parameter Value Unit Power Dissipation 350 mW Thermal Resistance, Junction-to-Ambient 357 °C/W Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol VR VF Parameter Breakdown Voltage Forward Voltage Conditions IR = 1.0 mA Min. Max. 120 Unit V IF = 10 mA 750 mV IF = 50 mA 840 mV IF = 100 mA 900 mV IF = 200 mA 1.00 V IF = 400 mA 1.25 V VR = 90 V 100 nA VR = 90 V, TA = 150°C 100 μA Total Capacitance VR = 0, f = 1.0 MHz 35 pF Reverse Recovery Time IF = IR = 30 mA, IRR = 3.0 mA, RL = 100 Ω 50 ns IR Reverse Current CT trr © 2001 Fairchild Semiconductor Corporation BAS31 Rev. 1.3 www.fairchildsemi.com 2 BAS31 — Small Signal Diode Thermal Characteristics BAS31 — Small Signal Diode 325 IR - REVERSE CURRENT (nA) VVRR - REVERSE VOLTAGE (V) Typical Performance Characteristics Ta= 25°C 300 275 3 5 10 20 30 50 I R - REVERSE CURRENT (uA) V VFF - FORWARD VOLTAGE (mV) IIRR - REVERSE CURRENT (nA) 20 10 0 55 80 70 60 50 40 30 255 400 350 300 250 1 725 Ta= 25°C 700 650 600 550 500 10 Figure 5. Forward Voltage vs. Forward Current VF - 0.1 to 10 mA © 2001 Fairchild Semiconductor Corporation BAS31 Rev. 1.3 2 3 5 10 20 30 50 IF - FORWARD CURRENT (uA) 100 Figure 4. Forward Voltage vs. Forward Current VF - 1.0 to 100 μA VVFF - FORWARD VOLTAGE (mV) VVF F - FORWARD VOLTAGE (mV) Figure 3. Reverse Current vs. Reverse Voltage IR - 180 to 255 V 0.2 0.3 0.5 1 2 3 5 I F - FORWARD CURRENT (mA) Ta= 25°C 450 GENERAL RULE: The Reverse Current of a diode will approximately double for every ten Degree C increase in Temperature 450 0.1 75 95 115 135 155 175 195 V R - REVERSE VOLTAGE (V) Figure 2. Reverse Current vs. Reverse Voltage IR - 55 to 205 V Ta= 25°C 200 220 240 VR - REVERSE VOLTAGE (V) 30 GENERAL RULE: The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature 100 20 180 Ta= 25°C 40 100 Figure 1. Reverse Voltage vs. Reverse Current BV - 1.0 to 100 μA 90 50 1.4 Ta= 25°C 1.3 1.2 1.1 1 0.9 0.8 0.7 10 20 30 50 100 200 300 IF - FORWARD CURRENT (mA) 500 800 Figure 6. Forward Voltage vs. Forward Current VF - 10 to 800 mA www.fairchildsemi.com 3 BAS31 — Small Signal Diode 1.3 Ta= -40°C 600 Ta= 25°C 400 Ta= +80°C 1.2 1.1 1 0.9 200 0.8 0.001 0.003 0.01 0.03 0.1 0.3 1 I F - FORWARD CURRENT (mA) 3 10 Figure 7. Forward Voltage vs. Ambient Temperature VF - 1.0 μA - 10 mA (- 40 to +80°C) 500 50 40 30 20 0 IF = IR = 30 mA Rloop = 100 Ohms 1 1.5 2 2.5 Irr - REVERSE RECOVERY CURRENT (mA) 2 4 6 8 10 REVERSE VOLTAGE (V) 12 14 15 Figure 8. Capacitance vs. Reverse Voltage I - CURRENT (mA) REVERSE RECOVERY (nS) Ta= 25°C 800 CAPACITANCE (pF) VVFF - FORWARD VOLTAGE (mV) Typical Performance Characteristics (Continued) 400 300 -F OR WA RD CU RR EN TS TE AD Y Io - A ST VER AT AGE E REC -m TIFIE D CU A RRE NT mA 200 100 0 3 IR 0 50 100 150 o TA - AMBIENT TEMPERATURE ( C) Figure 10. Average Rectified Current(IO) and Forward Current (IF) vs. Ambient Temperature(TA) Figure 9. Reverse Recovery Time vs. Reverse Recovery Current (Irr) PD - POWER DISSIPATION (mW) 500 400 300 SOT-23 Pkg 200 100 0 0 50 100 150 IO - AVERAGE TEMPERATURE ( oC) 200 Figure 11. Power Derating Curve © 2001 Fairchild Semiconductor Corporation BAS31 Rev. 1.3 www.fairchildsemi.com 4 BAS31 — Small Signal Diode Physical Dimensions 0.95 2.92±0.20 3 1.40 1.30+0.20 -0.15 1 2.20 2 0.60 0.37 (0.29) 0.95 0.20 1.00 A B 1.90 1.90 LAND PATTERN RECOMMENDATION SEE DETAIL A 1.20 MAX 0.10 0.00 (0.93) 0.10 C C 2.40±0.30 NOTES: UNLESS OTHERWISE SPECIFIED GAGE PLANE 0.23 0.08 A) REFERENCE JEDEC REGISTRATION TO-236, VARIATION AB, ISSUE H. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE INCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR EXTRUSIONS. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 1994. E) DRAWING FILE NAME: MA03DREV10 0.25 0.20 MIN (0.55) SEATING PLANE SCALE: 2X Figure 12. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE © 2001 Fairchild Semiconductor Corporation BAS31 Rev. 1.3 www.fairchildsemi.com 5 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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