FDMS6673BZ P-Channel PowerTrench® MOSFET -30 V, -28 A, 6.8 m: Features General Description The FDMS6673BZ has been designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) and ESD protection. Max rDS(on) = 6.8 m: at VGS = -10 V, ID = -15.2 A Max rDS(on) = 12.5 m: at VGS = -4.5 V, ID = -11.2 A Advanced Package and Silicon combination for low rDS(on) Applications HBM ESD protection level of 8 kV typical(note 3) Load Switch in Notebook and Server MSL1 robust package design Notebook Battery Pack Power Management RoHS Compliant Bottom Top S D D D Pin 1 S S G D 5 4 G D 6 3 S D 7 2 S D 8 1 S D Power 56 MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous (Package limited) ID TC = 25 °C -Continuous (Silicon limited) TC = 25 °C -Continuous TA = 25 °C TJ, TSTG Units V ±25 V -28 -90 (Note 1a) -Pulsed PD Ratings -30 -15.2 A -120 Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 73 (Note 1a) Operating and Storage Junction Temperature Range 2.5 -55 to +150 W °C Thermal Characteristics RTJC Thermal Resistance, Junction to Case RTJA Thermal Resistance, Junction to Ambient 1.7 (Note 1a) 50 °C/W Package Marking and Ordering Information Device Marking FDMS6673BZ Device FDMS6673BZ ©2009 Fairchild Semiconductor Corporation FDMS6673BZ RevC3 Package Power 56 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMS6673BZ P-Channel PowerTrench® MOSFET August 2009 Parameter Symbol Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250 PA, VGS = 0 V 'BVDSS 'TJ Breakdown Voltage Temperature Coefficient ID = -250 PA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = -24 V, VGS = 0 V -1 PA IGSS Gate to Source Leakage Current VGS = ±25 V, VDS = 0 V ±10 PA -3.0 V -30 V -18 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250 PA 'VGS(th) 'TJ Gate to Source Threshold Voltage Temperature Coefficient ID = -250 PA, referenced to 25 °C rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance -1.0 -1.8 7 mV/°C VGS = -10 V, ID = -15.2 A 5.2 6.8 VGS = -4.5 V, ID = -11.2 A 7.8 12.5 VGS = -10 V, ID = -15.2 A, TJ = 125 °C 7.5 9.8 VDS = -5 V, ID = -15.2 A 76 m: S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = -15 V, VGS = 0 V, f = 1 MHz 4444 5915 pF 781 1040 pF 695 1045 pF : 4.5 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge VGS = 0 V to -10 V Qg Total Gate Charge VGS = 0 V to -5 V Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = -15 V, ID = -15.2 A, VGS = -10 V, RGEN = 6 : VDD = -15 V, ID = -15.2 A 14 26 ns 28 45 ns 97 156 ns 79 127 ns 93 130 nC 52 73 nC 13 nC 26 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = -2.1 A (Note 2) VGS = 0 V, IS = -15.2 A (Note 2) IF = -15.2 A, di/dt = 100 A/Ps 0.7 1.20 0.8 1.25 V 33 53 ns 20 32 nC Notes: 1: RTJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTCA is determined by the user's board design. a. 50 °C/W when mounted on a 1 in2 pad of 2 oz copper. b. 125 °C/W when mounted on a minimum pad of 2 oz copper. 2: Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0%. 3: The diode connected between the gate and source servers only as protection against ESD. No gate overvoltage rating is implied. ©2009 Fairchild Semiconductor Corporation FDMS6673BZ RevC3 2 www.fairchildsemi.com FDMS6673BZ P-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 120 100 -ID, DRAIN CURRENT (A) VGS = -4.5 V 80 VGS = -4 V 60 PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX VGS = -3.5 V 40 20 VGS = -3 V 0 0 1 2 3 4.0 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = -10 V VGS = -6 V VGS = -3 V 3.5 3.0 VGS = -4.5 V 2.0 VGS = -6 V 1.5 1.0 VGS = -10 V 0.5 4 0 20 40 60 80 100 120 -ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 25 ID = -15.2 A VGS = -10 V rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 0.6 -75 -50 SOURCE ON-RESISTANCE (m:) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = -4 V VGS = -3.5 V 2.5 -VDS, DRAIN TO SOURCE VOLTAGE (V) 15 5 TJ = 25 oC 2 -IS, REVERSE DRAIN CURRENT (A) VDS = -5 V 60 40 = 150 oC 20 TJ = -55 oC 0 0 1 2 3 4 200 100 8 10 VGS = 0 V 10 1 TJ = 150 oC TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.001 0.0 5 -VGS, GATE TO SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics ©2009 Fairchild Semiconductor Corporation FDMS6673BZ RevC3 6 Figure 4. On-Resistance vs Gate to Source Voltage 80 TJ = 25 oC 4 -VGS, GATE TO SOURCE VOLTAGE (V) PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX TJ TJ = 125 oC 10 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 120 100 PULSE DURATION = 80 Ps ID = -15.2 A DUTY CYCLE = 0.5% MAX 20 Figure 3. Normalized On Resistance vs Junction Temperature -ID, DRAIN CURRENT (A) PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDMS6673BZ P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted ID = -15.2 A 8 CAPACITANCE (pF) -VGS, GATE TO SOURCE VOLTAGE (V) 10000 10 VDD = 10 V 6 VDD = 15 V VDD = 20 V 4 Ciss Coss 1000 2 0 0 20 40 60 80 300 0.1 100 1 Figure 7. Gate Charge Characteristics 30 Figure 8. Capacitance vs Drain to Source Voltage 100 -ID, DRAIN CURRENT (A) 50 10 TJ = 100 oC TJ = TJ = 25 oC 125 oC 80 60 VGS = 10 V VGS = 4.5 V 40 20 Limited by Package o 1 0.01 0.1 1 0 25 100 200 10 RTJC = 1.7 C/W 50 150 -4 10 -Ig, GATE LEAKAGE CURRENT (A) 100 us 1 ms 10 10 ms 100 ms THIS AREA IS LIMITED BY rDS(on) 1s SINGLE PULSE TJ = MAX RATED 10 s RTJA = 125 oC/W DC TA = 25 oC 0.01 0.01 125 Figure 10. Maximum Continuous Drain Current vs Case Temperature 200 100 0.1 100 o Figure 9. Unclamped Inductive Switching Capability 1 75 TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) -ID, DRAIN CURRENT (A) 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) -IAS, AVALANCHE CURRENT (A) Crss f = 1 MHz VGS = 0 V 0.1 VGS = 0 V -5 10 TJ = 125 oC -6 10 TJ = 25 oC -7 10 -8 10 -9 10 1 10 100 200 5 10 15 20 25 30 -VGS, GATE TO SOURCE VOLTAGE (V) -VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area ©2009 Fairchild Semiconductor Corporation FDMS6673BZ RevC3 0 Figure 12. Igss vs Vgss 4 www.fairchildsemi.com FDMS6673BZ P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted P(PK), PEAK TRANSIENT POWER (W) 2000 VGS = -10 V 1000 SINGLE PULSE RTJA = 125 oC/W 100 TA = 25 oC 10 1 0.5 -4 10 -3 -2 10 -1 10 1 10 100 10 1000 t, PULSE WIDTH (sec) Figure 13. Single Pulse Maximum Power Dissipation NORMALIZED THERMAL IMPEDANCE, ZTJA 2 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZTJA x RTJA + TA SINGLE PULSE o 0.001 0.0004 -4 10 RTJA = 125 C/W -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 14. Junction-to-Ambient Transient Thermal Response Curve ©2009 Fairchild Semiconductor Corporation FDMS6673BZ RevC3 5 www.fairchildsemi.com FDMS6673BZ P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted FDMS6673BZ P-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout ©2009 Fairchild Semiconductor Corporation FDMS6673BZ RevC3 6 www.fairchildsemi.com tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I41 ©2009 Fairchild Semiconductor Corporation7www.fairchildsemi.com FDMS6673BZ RevC3 FDMS6673BZ P-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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