FDT86256 N-Channel PowerTrench® MOSFET 150 V, 1.2 A, 845 mΩ Features General Description Max rDS(on) = 845 mΩ at VGS = 10 V, ID = 1.2 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level. Max rDS(on) = 1280 mΩ at VGS = 6.0 V, ID = 1.0 A Very low Qg and Qgd compared to competing trench technologies Fast switching speed Applications 100% UIL Tested DC-DC conversion RoHS Compliant Inverter Synchronous Rectifier D D S D G SOT-223 G D S MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) ID TC = 25 °C TA = 25 °C PD TJ, TSTG ±20 V 2.5 (Note 1a) -Pulsed 1.2 A 2 Single Pulse Avalanche Energy EAS Units V 3 TC = 25 °C -Continuous Ratings 150 (Note 3) Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 1 10 (Note 1a) Operating and Storage Junction Temperature Range 2.3 -55 to +150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case 12 RθJA Thermal Resistance, Junction to Ambient (Note 1a) 55 °C/W Package Marking and Ordering Information Device Marking 86256 Device FDT86256 ©2011 Fairchild Semiconductor Corporation FDT86256 Rev. C Package SOT-223 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 2500 units www.fairchildsemi.com FDT86256 N-Channel PowerTrench® MOSFET August 2011 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 120 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±10 μA 4 V 150 V 100 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 2 3.5 -8 mV/°C VGS = 10 V, ID = 1.2 A 695 845 VGS = 6 V, ID = 1.0 A 912 1280 VGS = 10 V, ID = 1.2 A, TJ = 125 °C 1298 1367 VDS = 5 V, ID = 1.2 A 0.3 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 75 V, VGS = 0 V, f = 1MHz 55 73 pF 8 11 pF 1 1.4 pF Ω 1.3 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) Total Gate Charge VGS = 0 V to 10 V Qg(TOT) Total Gate Charge VGS = 0 V to 6 V Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = 75 V, ID = 1.2 A, VGS = 10 V, RGEN = 6 Ω VDD = 75 V, ID = 1.2 A 2.7 10 1.7 10 ns ns 4.8 10 ns 2.6 10 ns 1.2 2.0 nC 0.8 1.0 0.4 nC 0.3 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 1.2 A (Note 2) 0.9 1.3 VGS = 0 V, IS = 1.0 A (Note 2) 0.8 1.3 47 75 ns 24 38 nC IF = 1.2 A, di/dt = 100 A/μs V NOTES: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 55 °C/W when mounted on a 1 in2 pad of 2 oz copper b) 118 °C/W when mounted on a minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %. 3. Starting TJ = 25 °C, L = 3 mH, IAS = 1 A, VDD = 150 V, VGS = 10 V. 4. The diode connected between gate and source serves only as protection against ESD. No gate overvoltage rating is implied. ©2011 Fairchild Semiconductor Corporation FDT86256 Rev. C 2 www.fairchildsemi.com FDT86256 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 3.0 VGS = 7 V 2.0 VGS = 6 V 1.5 VGS = 5.5 V 1.0 0.5 0.0 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 1 2 3 VGS = 5.5 V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 8 V 2.5 ID, DRAIN CURRENT (A) 4 VGS = 10 V 4 VGS = 6 V 3 VGS = 7 V 2 VGS = 8 V 1 VGS = 10 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0.0 5 0.5 1.0 1.5 2.0 2.5 ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics rDS(on), DRAIN TO 1.5 1.2 0.9 0.6 0.3 -75 -50 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.8 3000 2000 TJ = 125 oC 0 IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) TJ = 25 oC TJ = -55 oC 5 6 7 8 9 10 VGS = 0 V 1 TJ = 150 oC TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.2 8 0.4 0.6 0.8 1.0 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics ©2011 Fairchild Semiconductor Corporation FDT86256 Rev. C 7 10 TJ = 150 oC 4 6 Figure 4. On-Resistance vs Gate to Source Voltage VDS = 5 V 3 5 VGS, GATE TO SOURCE VOLTAGE (V) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 2 TJ = 25 oC 1000 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 1.0 0.0 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX ID = 1.2 A Figure 3. Normalized On-Resistance vs Junction Temperature 0.5 4.0 4000 ID = 1.2 A VGS = 10 V 2.1 1.5 3.5 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 2.4 2.0 3.0 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDT86256 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 100 VGS, GATE TO SOURCE VOLTAGE (V) 10 ID = 1.2 A Ciss VDD = 75 V VDD = 65 V 6 CAPACITANCE (pF) 8 VDD = 85 V 4 Coss 10 Crss 2 f = 1 MHz VGS = 0 V 1 0 0.0 0.3 0.6 0.9 0.5 0.1 1.2 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 1.8 10 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) o RθJA = 55 C/W 1.6 1 TJ = 25 oC TJ = 100 oC 0.1 TJ = 125 oC 1.4 1.2 1.0 VGS = 10 V 0.8 VGS = 6 V 0.6 0.4 0.2 0.01 0.001 0.01 0.1 1 10 100 0.0 25 1000 50 75 100 125 150 o TA, AMBIENT TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs Ambient Temperature 1 100 THIS AREA IS LIMITED BY rDS(on) P(PK), PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A) 3 100 μs 1 ms 0.1 10 ms 100 ms 0.01 0.005 0.01 SINGLE PULSE TJ = MAX RATED 1s RθJA = 118 oC/W 10 s TA = 25 oC DC 10 SINGLEPULSE o RθJA=118 C/W 1 0.5 -3 10 o TA=25 C -2 10 -1 10 1 10 100 1000 t, PULSEWIDTH(sec) 0.1 1 10 100 500 VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area ©2011 Fairchild Semiconductor Corporation FDT86256 Rev. C Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDT86256 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 DUTY CYCLE-DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 SINGLE PULSE t2 o RθJA = 118 C/W 0.01 -4 10 -3 10 -2 10 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA -1 10 1 10 100 1000 t RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2011 Fairchild Semiconductor Corporation FDT86256 Rev. C 5 www.fairchildsemi.com FDT86256 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I55 ©2011 Fairchild Semiconductor Corporation FDT86256 Rev. 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