FDMS8848NZ N-Channel PowerTrench® MOSFET 40 V, 49 A, 3.1 mΩ Features General Description The FDMS8848NZ has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. Max rDS(on) = 3.1 mΩ at VGS = 10 V, ID = 22.8 A Max rDS(on) = 5.1 mΩ at VGS = 4.5 V, ID = 17.5 A Advanced Package and Silicon combination for low rDS(on) and high efficiency Applications MSL1 robust package design Computing VR & IMVP Vcore RoHS Compliant Secondary Side Synchronous Rectifier POL DC/DC Converter Oring FET/ Load Switching Bottom Top S D D D Pin 1 S S G D 5 4 G D 6 3 S D 7 2 S D 8 1 S D Power 56 MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous (Package limited) ID TC = 25 °C -Continuous (Silicon limited) TC = 25 °C -Continuous TA = 25 °C PD TJ, TSTG Units V ±20 V 49 143 (Note 1a) 22.8 (Note 3) 480 -Pulsed A 90 Single Pulse Avalanche Energy EAS Ratings 40 Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 104 (Note 1a) Operating and Storage Junction Temperature Range 2.5 -55 to +150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 1.2 (Note 1a) 50 °C/W Package Marking and Ordering Information Device Marking FDMS8848NZ Device FDMS8848NZ ©2008 Fairchild Semiconductor Corporation FDMS8848NZ Rev.C Package Power 56 1 Reel Size 13’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMS8848NZ N-Channel PowerTrench® MOSFET August 2008 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 µA, VGS = 0 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 32 V, VGS = 0 V 1 µA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±10 µA 3.0 V 40 V 28 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 µA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 µA, referenced to 25 °C VGS = 10 V, ID = 22.8 A 2.6 3.1 rDS(on) Static Drain to Source On Resistance VGS = 4.5 V, ID = 17.5 A 3.3 5.1 VGS = 10 V, ID = 22.8 A, TJ = 125 °C 3.8 5.3 VDS = 10 V, ID = 22.8 A 130 gFS Forward Transconductance 1.0 1.7 -6 mV/°C mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 20 V, VGS = 0 V, f = 1 MHz 6071 8075 pF 705 940 pF 466 700 pF 1.4 2.8 Ω Switching Characteristics td(on) Turn-On Delay Time tr Rise Time VDD = 20 V, ID = 22.8 A, VGS = 10 V, RGEN = 6 Ω td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge VGS = 0 V to 10 V Qg Total Gate Charge VGS = 0 V to 5 V Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = 20 V, ID = 22.8 A 20 36 ns 19 35 ns 63 101 ns 13 24 ns 108 152 nC 57 80 nC 17 nC 19 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 2.1 A (Note 2) 0.7 1.2 VGS = 0 V, IS = 22.8 A (Note 2) 0.8 1.3 IF = 22.8 A, di/dt = 100 A/µs V 34 55 ns 28 45 nC NOTES: 1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 50 °C/W when mounted on a 1 in2 pad of 2 oz copper. b. 125 °C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. 3. Starting TJ = 25°C, L =1 mH, IAS = 31 A, VDD = 36 V, VGS = 10 V ©2008 Fairchild Semiconductor Corporation FDMS8848NZ Rev.C 2 www.fairchildsemi.com FDMS8848NZ N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 90 ID, DRAIN CURRENT (A) 75 VGS = 4.5 V 60 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX VGS = 3.5 V 45 VGS = 3 V 30 15 0 0 1 2 3 4.0 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10 V PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 3.5 VGS = 3 V 3.0 2.5 2.0 VGS = 3.5 V 1.5 VGS = 4.5 V 1.0 VGS = 10 V 0.5 4 0 15 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On Region Characteristics 75 90 10 ID = 22.8 A VGS = 10 V rDS(on), DRAIN TO 1.6 1.4 1.2 1.0 0.8 0.6 -75 -50 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 60 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.8 ID = 22.8 A 8 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 6 TJ = 125 oC 4 2 TJ = 25 oC 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 90 100 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 75 ID, DRAIN CURRENT (A) 45 ID, DRAIN CURRENT (A) VDS = 5 V 60 45 TJ = 150 oC 30 TJ = 25 oC 15 TJ = -55 oC 0 0 1 2 3 VGS = 0 V 10 TJ = 150 oC 1 TJ = 25 oC 0.1 0.01 TJ = -55 oC 0.001 0.0 4 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2008 Fairchild Semiconductor Corporation FDMS8848NZ Rev.C 3 1.2 www.fairchildsemi.com FDMS8848NZ N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 10000 ID = 22.8 A Ciss 8 VDD = 15 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 6 VDD = 20 V VDD = 25 V 4 Coss 1000 0 0 20 40 60 80 100 100 0.1 120 1 Figure 7. Gate Charge Characteristics 160 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 40 Figure 8. Capacitance vs Drain to Source Voltage 40 TJ = 100 oC 10 TJ TJ = 25 oC = 125 oC 120 VGS = 10 V 80 VGS = 4.5 V 40 Limited by Package 1 0.01 0.1 1 10 100 0 25 1000 50 P(PK), PEAK TRANSIENT POWER (W) 1 ms 10 10 ms 0.1 100 ms 1s 10 s RθJA = 125 oC/W o DC TC = 25 C 0.01 0.01 0.1 1 10 100200 125 150 2000 1000 SINGLE PULSE RθJA = 125 oC/W VGS = 10 V TC = 25 oC 100 10 1 0.5 -3 10 -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area ©2008 Fairchild Semiconductor Corporation FDMS8848NZ Rev.C 100 Figure 10. Maximum Continuous Drain Current vs Case Temperature 200 100 SINGLE PULSE TJ = MAX RATED 75 o Figure 9. Unclamped Inductive Switching Capability THIS AREA IS LIMITED BY rDS(on) o RθJC = 1.2 C/W TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) ID, DRAIN CURRENT (A) Crss f = 1 MHz VGS = 0 V 2 Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDMS8848NZ N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 125 C/W 1E-3 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2008 Fairchild Semiconductor Corporation FDMS8848NZ Rev.C 5 www.fairchildsemi.com FDMS8848NZ N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted FDMS8848NZ N-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout ©2008 Fairchild Semiconductor Corporation FDMS8848NZ Rev.C 6 www.fairchildsemi.com Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * FPS™ F-PFS™ FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® ™ ® tm Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * PDP SPM™ Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ Saving our world, 1mW at a time™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SuperMOS™ SyncFET™ ® ® tm The Power Franchise® tm TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I35 ©2008 Fairchild Semiconductor Corporation FDMS8848NZ Rev.C 7 www.fairchildsemi.com FDMS8848NZ N-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks.