FDZ193P P-Channel 1.7V PowerTrench® WL-CSP MOSFET -20V, -1A, 90m: Features General Description Occupies only 1.5 mm2 of PCB area Less than 50% of the area of 2 x 2 BGA Designed on Fairchild's advanced 1.7V PowerTrench® process with state of the art "low pitch" WLCSP packaging process, the FDZ193P minimizes both PCB space and rDS(on). This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, ultra-low profile packaging, low gate charge, and low rDS(on). Ultra-thin package: less than 0.65 mm height when mounted to PCB Application RoHS Compliant Battery management Max rDS(on) = 90m: at VGS = -4.5V, ID = -1A Max rDS(on) = 130m: at VGS = -2.5V, ID = -1A Max rDS(on) = 300m: at VGS = -1.7V, ID = -1A Load switch Battery protection PIN 1 PIN 1 S S G S S D G D BOTTOM D TOP MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage ID Drain Current -Continuous (Note 1a) -Pulsed PD TJ, TSTG Ratings -20 Units V ±12 V -3 -15 Power Dissipation (Note 1a) 1.9 Power Dissipation (Note 1b) 0.9 Operating and Storage Junction Temperature Range -55 to +150 A W °C Thermal Characteristics RTJA Thermal Resistance, Junction to Ambient (Note 1a) 65 RTJA Thermal Resistance, Junction to Ambient (Note 1b) 133 °C/W Package Marking and Ordering Information Device Marking 2 ©2009 Fairchild Semiconductor Corporation FDZ193P Rev.C4 (W) Device FDZ193P Package WL-CSP 1 Reel Size 7’’ Tape Width 8mm Quantity 5000 units www.fairchildsemi.com P-Channel 1.7V PowerTrench® WL-CSP MOSFET December 2014 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250PA, VGS = 0V 'BVDSS 'TJ Breakdown Voltage Temperature Coefficient -20 V ID = -250PA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = -16V, VGS = 0V -1 PA IGSS Gate to Source Leakage Current VGS = ±12V, VGS = 0V ±100 nA -1.5 V mV/°C -11 On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250PA 'VGS(th) 'TJ Gate to Source Threshold Voltage Temperature Coefficient ID = -250PA, referenced to 25°C -0.6 -0.9 3 mV/°C VGS = -4.5V, ID = -1A 66 90 VGS = -2.5V, ID = -1A 92 130 VGS = -1.7V, ID = -1A 195 300 84 123 m: rDS(on) Drain to Source On Resistance ID(on) On to State Drain Current VGS = -4.5V, VDS = -5V gFS Forward Transconductance VDS = -5V, ID = -1A 5.6 VDS = -10V, VGS = 0V, f = 1MHz 660 pF 150 pF 90 pF f = 1MHz 9.5 : 13 23 ns VDD = -10V, ID = -1A VGS = -4.5V, RGEN = 6: 10 20 ns 28 45 ns 21 34 ns 7 10 nC VGS = -4.5V, ID = -1A TJ = 125°C -10 A S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance P-Channel 1.7V PowerTrench® WL-CSP MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VGS = 0V to 10V VDD = -10V ID = -1A 1 nC 2 nC Drain-Source Diode Characteristics IS Maximum continuous Drain-Source Diode Forward Current VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = -1.1A -1.1 (Note 2) IF = -1A, di/dt = 100A/Ps -0.7 -1.2 A V 19 ns 6 nC Notes: 1: RTJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to the circuit board side of the solder ball, RTJB is defined for reference. For RTJC the thermal reference point for the case is defined as the top surface of the copper chip carrier. RTJC and RTJB are guaranteed by design while RTJA is determined by the user's board design. b. 133°C/W when mounted on a minimum pad of 2 oz copper a. 65°C/W when mounted on a 1 in2 pad of 2 oz copper,1.5” X 1.5” X 0.062” thick PCB 2: Pulse Test: Pulse Width < 300Ps, Duty cycle < 2.0%. FDZ193P Rev.C4 (W) 2 www.fairchildsemi.com 2.0 VGS = -4.5V -ID, DRAIN CURRENT (A) 14 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 16 PULSE DURATION = 300Ps DUTY CYCLE = 2.0%MAX VGS = -3V 12 10 VGS = -3.5V 8 VGS = -2.5V 6 4 VGS = -2V 2 VGS = -1.7V 0 0.0 0.5 1.8 VGS = -2.5V 1.4 VGS = -3V 1.2 VGS = -3.5V 1.0 VGS = -4.5V 0.8 1.0 1.5 2.0 2.5 3.0 3.5 4.0 -VDS, DRAIN TO SOURCE VOLTAGE (V) 0 2 4 6 8 10 -ID, DRAIN CURRENT(A) 12 14 16 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.4 240 ID = -1A VGS = -4.5V 1.3 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (m:) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE PULSE DURATION = 300Ps DUTY CYCLE = 2.0%MAX 1.6 Figure 1. On Region Characteristics 1.2 1.1 1.0 0.9 0.8 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) 150 Figure 3. Normalized On Resistance vs Junction Temperature ID = -1A PULSE DURATION = 300Ps DUTY CYCLE = 2.0%MAX 200 160 120 TJ = 125oC 80 40 1.5 TJ = 25oC 2.0 2.5 3.0 3.5 4.0 4.5 -VGS, GATE TO SOURCE VOLTAGE (V) 5.0 Figure 4. On-Resistance vs Gate to Source Voltage 16 IS, REVERSE DRAIN CURRENT (A) 10 PULSE DURATION = 300Ps DUTY CYCLE = 2.0%MAX 14 -ID, DRAIN CURRENT (A) VGS = -2V P-Channel 1.7V PowerTrench® WL-CSP MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 12 VDD = -5V 10 8 TJ = 125oC 6 TJ = 25oC 4 2 TJ = -55oC 0 0.0 0.5 1.0 1.5 2.0 2.5 -VGS, GATE TO SOURCE VOLTAGE (V) 3.0 Figure 5. Transfer Characteristics FDZ193P Rev.C4 (W) VGS = 0V 1 TJ = 125oC 0.1 TJ = 25oC 0.01 TJ = -55oC 1E-3 1E-4 0.2 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com 2000 ID = -1A 1000 4 VDD = -5V 3 CAPACITANCE (pF) -VGS, GATE TO SOURCE VOLTAGE(V) 5 VDD = -10V 2 VDD = -15V 1 0 0 2 4 6 8 Ciss Coss 100 f = 1MHz VGS = 0V 50 0.1 10 Qg, GATE CHARGE(nC) 3.5 30 3.0 10 VGS = -4.5V 2.5 2.0 1.5 VGS = -2.5V 1.0 0.5 1ms 1 10ms OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 0.1 100ms 1s SINGLE PULSE TJ = MAX RATED 10s DC o RTJA = 133 C/W o 50 20 100us RTJA = 65 C/W 0.0 25 1 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance vs Drain to Source Voltage -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) Figure 7. Gate Charge Characteristics Crss P-Channel 1.7V PowerTrench® WL-CSP MOSFET Typical Characteristics TJ = 25°C unless otherwise noted TA = 25OC 75 100 125 0.01 0.1 150 1 80 10 o TA, CASE TEMPERATURE ( C) -VDS, DRAIN to SOURCE VOLTAGE (V) Figure 9. Maximum Continuous Drain Current vs Ambient Temperature Figure 10. Forward Bias Safe Operating Area P(PK), PEAK TRANSIENT POWER (W) 50 VGS = 10V FOR TEMPERATURES ABOVE 25oC DERATE PEAK 10 CURRENT AS FOLLOWS: I = I25 150 – T A -----------------------125 TA = 25oC 1 0.5 -3 10 SINGLE PULSE -2 10 -1 10 0 10 t, PULSE WIDTH (s) 1 10 2 10 3 10 Figure 11. Single Pulse Maximum Power Dissipation FDZ193P Rev.C4 (W) 4 www.fairchildsemi.com 2 NORMALIZED THERMAL IMPEDANCE, ZTJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZTJA x RTJA + TA SINGLE PULSE 0.01 -3 10 -2 10 -1 0 10 10 1 10 t, RECTANGULAR PULSE DURATION (s) Figure 12. Transient Thermal Response Curve FDZ193P Rev.C4 (W) 5 2 10 3 10 P-Channel 1.7V PowerTrench® WL-CSP MOSFET Typical Characteristics TJ = 25°C unless otherwise noted www.fairchildsemi.com P-Channel 1.7V PowerTrench® WL-CSP MOSFET Dimensional Outline and Pad Layout Pin Definations: Gate Drain Source A1 C1, C2 A2, B1, B2 Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_UCBAU-006 FDZ193P Rev.C4 (W) 6 www.fairchildsemi.com AccuPower AttitudeEngine™ Awinda ® AX-CAP®* BitSiC Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic ® DEUXPEED Dual Cool™ EcoSPARK® EfficientMax ESBC ® ® Fairchild Fairchild Semiconductor® FACT Quiet Series FACT® FAST® FastvCore FETBench FPS F-PFS FRFET® SM Global Power Resource GreenBridge Green FPS Green FPS e-Series Gmax GTO IntelliMAX ISOPLANAR Making Small Speakers Sound Louder and Better™ MegaBuck MICROCOUPLER MicroFET MicroPak MicroPak2 MillerDrive MotionMax MotionGrid ® MTi ® MTx® ® MVN mWSaver ® OptoHiT OPTOLOGIC® OPTOPLANAR ® ®* ® PowerTrench ® PowerXS™ Programmable Active Droop QFET® QS Quiet Series RapidConfigure Saving our world, 1mW/W/kW at a time™ SignalWise SmartMax SMART START Solutions for Your Success SPM® STEALTH SuperFET® SuperSOT -3 SuperSOT -6 SuperSOT -8 SupreMOS® SyncFET Sync-Lock™ TinyBoost® TinyBuck® TinyCalc ® TinyLogic TINYOPTO TinyPower TinyPWM TinyWire TranSiC TriFault Detect TRUECURRENT®* μSerDes UHC® Ultra FRFET UniFET VCX VisualMax VoltagePlus XS™ Xsens™ 仙童™ * Trademarks of System General Corporation, us ed under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. TO OBTAIN THE LATEST, MOST UP-TO-DATE DATASHEET AND PRODUCT INFORMATION, VISIT OUR WEBSITE AT HTTP://WWW.FAIRCHILDSEMI.COM. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perf orm can be reasonably expected to cause the failure of the life support de vice or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy.Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing. problem in the industry. All manufacturers of semiconductor products are exp eriencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors . PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Definition Preliminary First Production No Identification Needed Full Production Obsolete Not In Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without not ice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I73 FDZ193P Rev.C4 (W) 7 www.fairchildsemi.com P-Channel 1.7V PowerTrench ® WL-CSP MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.