FAIRCHILD FDMS86322

FDMS86322
N-Channel PowerTrench® MOSFET
80 V, 60 A, 7.65 m:
Features
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench® process thant has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
„ Max rDS(on) = 7.65 m: at VGS = 10 V, ID = 13 A
„ Max rDS(on) = 12 m: at VGS = 6 V, ID = 7.2 A
„ Advanced Package and Silicon combination for low rDS(on)
and high efficiency
„ MSL1 robust package design
Application
„ 100% UIL tested
„ DC-DC Conversion
„ RoHS Compliant
Bottom
Top
Pin 1
S
D
D
D
S
S
G
D
5
4
G
D
6
3
S
D
7
2
S
D
8
1
S
D
Power 56
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current -Continuous (Package limited)
ID
TC = 25 °C
-Continuous (Silicon limited)
TC = 25 °C
-Continuous
TA = 25 °C
PD
TJ, TSTG
Units
V
±20
V
60
83
(Note 1a)
-Pulsed
13
A
200
Single Pulse Avalanche Energy
EAS
Ratings
80
(Note 3)
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
135
104
(Note 1a)
Operating and Storage Junction Temperature Range
2.5
-55 to +150
mJ
W
°C
Thermal Characteristics
RTJC
Thermal Resistance, Junction to Case
RTJA
Thermal Resistance, Junction to Ambient
1.2
(Note 1a)
50
°C/W
Package Marking and Ordering Information
Device Marking
FDMS86322
Device
FDMS86322
©2010 Fairchild Semiconductor Corporation
FDMS86322 RevC
Package
Power 56
1
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
www.fairchildsemi.com
FDMS86322 N-Channel PowerTrench® MOSFET
October 2010
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 PA, VGS = 0 V
'BVDSS
'TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 PA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
VDS = 64 V, VGS = 0 V
800
nA
IGSS
Gate to Source Leakage Current, Forward
VGS = ±20 V, VDS = 0 V
100
nA
4.0
V
80
V
66
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 PA
'VGS(th)
'TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 PA, referenced to 25 °C
-9
VGS = 10 V, ID = 13 A
6.1
rDS(on)
Static Drain to Source On Resistance
VGS = 6 V, ID = 7.2 A
8.2
12
VGS = 10 V, ID = 13 A, TJ = 125 °C
10.7
14
gFS
Forward Transconductance
2.0
VDS = 10 V, ID = 13 A
2.9
mV/°C
7.65
45
m:
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 50 V, VGS = 0 V,
f = 1 MHz
2255
3000
pF
460
610
pF
30
45
pF
:
1.0
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
15
27
11
20
ns
ns
27
44
ns
VDD = 50 V, ID = 13 A,
VGS = 10 V, RGEN = 6 :
7
13
ns
Total Gate Charge
VGS = 0 V to 10 V
39
55
nC
VGS = 0 V to 5 V
22
31
Qg
Total Gate Charge
Qgs
Gate to Source Charge
Qgd
Gate to Drain “Miller” Charge
VDD = 50 V,
ID = 13 A
nC
9.5
nC
10.8
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 2.1 A
(Note 2)
0.7
1.2
VGS = 0 V, IS = 13 A
(Note 2)
0.8
1.3
IF = 13 A, di/dt = 100 A/Ps
V
56
90
ns
61
98
nC
Notes:
1. RTJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTCA is determined by
the user's board design.
a. 50 °C/W when mounted on a
1 in2 pad of 2 oz copper.
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0%.
3. Starting TJ = 25 °C, L = 0.3 mH, IAS = 30 A, VDD = 75 V, VGS = 10 V
FDMS86322 RevC
2
www.fairchildsemi.com
FDMS86322 N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
200
ID, DRAIN CURRENT (A)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
5
VGS = 10 V
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX
150
VGS = 6 V
VGS = 5.5 V
100
VGS = 5 V
50
VGS = 4.5 V
0
0
1
2
3
4
VGS = 4.5 V
4
VGS = 5 V
3
VGS = 5.5 V
2
VGS = 6 V
1
0
5
0
50
100
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
200
40
ID = 13 A
VGS = 10 V
1.8
rDS(on), DRAIN TO
1.6
1.4
1.2
1.0
0.8
0.6
-75
-50
-25
0
25
50
75
SOURCE ON-RESISTANCE (m:)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
150
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
2.0
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5% MAX
ID = 13 A
30
20
TJ = 125 oC
10
TJ = 25 oC
0
100 125 150
4
TJ, JUNCTION TEMPERATURE (oC)
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs Junction Temperature
Figure 4. On-Resistance vs Gate to
Source Voltage
200
IS, REVERSE DRAIN CURRENT (A)
100
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX
150
ID, DRAIN CURRENT (A)
VGS = 10 V
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX
VDS = 5 V
100
TJ = 150 oC
TJ = 25 oC
50
TJ =
-55 oC
2
3
4
5
6
7
10
TJ = 150 oC
1
TJ = 25 oC
0.1
TJ = -55 oC
0.01
0.0
0
1
VGS = 0 V
8
0.2
0.4
0.6
0.8
1.0
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
FDMS86322 RevC
3
1.2
www.fairchildsemi.com
FDMS86322 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
10000
ID = 13 A
VDD = 50 V
Ciss
8
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE (V)
10
VDD = 75 V
VDD = 25 V
6
4
Coss
1000
100
Crss
2
f = 1 MHz
VGS = 0 V
10
0.1
0
0
10
20
30
40
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
80
90
ID, DRAIN CURRENT (A)
TJ = 25 oC
10
TJ = 100
oC
TJ = 125 oC
75
60
VGS = 10 V
45
Limited by Package
30
VGS = 6 V
15
o
RTJC = 1.2 C/W
1
0.001
0.01
0.1
1
10
0
25
100
50
P(PK), PEAK TRANSIENT POWER (W)
100
1 ms
10 ms
THIS AREA IS
LIMITED BY rDS(on)
100 ms
SINGLE PULSE
TJ = MAX RATED
0.1
1s
RTJA = 125 oC/W
0.01
0.01
10 s
DC
TA = 25 oC
0.1
1
10
100
400
150
2000
1000
VGS = 10 V
SINGLE PULSE
RTJA = 125 oC/W
TA = 25 oC
100
10
1
0.5
-3
10
-2
10
-1
10
1
10
100
1000
t, PULSE WIDTH (sec)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
FDMS86322 RevC
125
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
300
1
100
o
Figure 9. Unclamped Inductive
Switching Capability
10
75
Tc, CASE TEMPERATURE ( C)
tAV, TIME IN AVALANCHE (ms)
ID, DRAIN CURRENT (A)
10
Figure 8. Capacitance vs Drain
to Source Voltage
100
IAS, AVALANCHE CURRENT (A)
1
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 12. Single Pulse Maximum
Power Dissipation
4
www.fairchildsemi.com
FDMS86322 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE, ZTJA
1
0.1
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
0.01
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZTJA x RTJA + TA
SINGLE PULSE
0.001
0.0005
-3
10
o
RTJA = 125 C/W
-2
10
-1
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
FDMS86322 RevC
5
www.fairchildsemi.com
FDMS86322 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
FDMS86322 N-Channel PowerTrench® MOSFET
Dimensional Outline and Pad Layout
FDMS86322 RevC
6
www.fairchildsemi.com
tm
tm
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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THEREIN, WHICH COVERS THESE PRODUCTS.
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As used here in:
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and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I48
FDMS86322 Rev.C
7
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FDMS86322 N-Channel Power Trench® MOSFET
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intended to be an exhaustive list of all such trademarks.
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Saving our world, 1mW/W/kW at a time™
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