FDMS86322 N-Channel PowerTrench® MOSFET 80 V, 60 A, 7.65 m: Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Max rDS(on) = 7.65 m: at VGS = 10 V, ID = 13 A Max rDS(on) = 12 m: at VGS = 6 V, ID = 7.2 A Advanced Package and Silicon combination for low rDS(on) and high efficiency MSL1 robust package design Application 100% UIL tested DC-DC Conversion RoHS Compliant Bottom Top Pin 1 S D D D S S G D 5 4 G D 6 3 S D 7 2 S D 8 1 S D Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous (Package limited) ID TC = 25 °C -Continuous (Silicon limited) TC = 25 °C -Continuous TA = 25 °C PD TJ, TSTG Units V ±20 V 60 83 (Note 1a) -Pulsed 13 A 200 Single Pulse Avalanche Energy EAS Ratings 80 (Note 3) Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 135 104 (Note 1a) Operating and Storage Junction Temperature Range 2.5 -55 to +150 mJ W °C Thermal Characteristics RTJC Thermal Resistance, Junction to Case RTJA Thermal Resistance, Junction to Ambient 1.2 (Note 1a) 50 °C/W Package Marking and Ordering Information Device Marking FDMS86322 Device FDMS86322 ©2010 Fairchild Semiconductor Corporation FDMS86322 RevC Package Power 56 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMS86322 N-Channel PowerTrench® MOSFET October 2010 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 PA, VGS = 0 V 'BVDSS 'TJ Breakdown Voltage Temperature Coefficient ID = 250 PA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 64 V, VGS = 0 V 800 nA IGSS Gate to Source Leakage Current, Forward VGS = ±20 V, VDS = 0 V 100 nA 4.0 V 80 V 66 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 PA 'VGS(th) 'TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 PA, referenced to 25 °C -9 VGS = 10 V, ID = 13 A 6.1 rDS(on) Static Drain to Source On Resistance VGS = 6 V, ID = 7.2 A 8.2 12 VGS = 10 V, ID = 13 A, TJ = 125 °C 10.7 14 gFS Forward Transconductance 2.0 VDS = 10 V, ID = 13 A 2.9 mV/°C 7.65 45 m: S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 50 V, VGS = 0 V, f = 1 MHz 2255 3000 pF 460 610 pF 30 45 pF : 1.0 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg 15 27 11 20 ns ns 27 44 ns VDD = 50 V, ID = 13 A, VGS = 10 V, RGEN = 6 : 7 13 ns Total Gate Charge VGS = 0 V to 10 V 39 55 nC VGS = 0 V to 5 V 22 31 Qg Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = 50 V, ID = 13 A nC 9.5 nC 10.8 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 2.1 A (Note 2) 0.7 1.2 VGS = 0 V, IS = 13 A (Note 2) 0.8 1.3 IF = 13 A, di/dt = 100 A/Ps V 56 90 ns 61 98 nC Notes: 1. RTJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTCA is determined by the user's board design. a. 50 °C/W when mounted on a 1 in2 pad of 2 oz copper. b. 125 °C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0%. 3. Starting TJ = 25 °C, L = 0.3 mH, IAS = 30 A, VDD = 75 V, VGS = 10 V FDMS86322 RevC 2 www.fairchildsemi.com FDMS86322 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 200 ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 5 VGS = 10 V PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX 150 VGS = 6 V VGS = 5.5 V 100 VGS = 5 V 50 VGS = 4.5 V 0 0 1 2 3 4 VGS = 4.5 V 4 VGS = 5 V 3 VGS = 5.5 V 2 VGS = 6 V 1 0 5 0 50 100 ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On Region Characteristics 200 40 ID = 13 A VGS = 10 V 1.8 rDS(on), DRAIN TO 1.6 1.4 1.2 1.0 0.8 0.6 -75 -50 -25 0 25 50 75 SOURCE ON-RESISTANCE (m:) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 150 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 2.0 PULSE DURATION = 80Ps DUTY CYCLE = 0.5% MAX ID = 13 A 30 20 TJ = 125 oC 10 TJ = 25 oC 0 100 125 150 4 TJ, JUNCTION TEMPERATURE (oC) 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 200 IS, REVERSE DRAIN CURRENT (A) 100 PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX 150 ID, DRAIN CURRENT (A) VGS = 10 V PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX VDS = 5 V 100 TJ = 150 oC TJ = 25 oC 50 TJ = -55 oC 2 3 4 5 6 7 10 TJ = 150 oC 1 TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.0 0 1 VGS = 0 V 8 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDMS86322 RevC 3 1.2 www.fairchildsemi.com FDMS86322 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 10000 ID = 13 A VDD = 50 V Ciss 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 75 V VDD = 25 V 6 4 Coss 1000 100 Crss 2 f = 1 MHz VGS = 0 V 10 0.1 0 0 10 20 30 40 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics 80 90 ID, DRAIN CURRENT (A) TJ = 25 oC 10 TJ = 100 oC TJ = 125 oC 75 60 VGS = 10 V 45 Limited by Package 30 VGS = 6 V 15 o RTJC = 1.2 C/W 1 0.001 0.01 0.1 1 10 0 25 100 50 P(PK), PEAK TRANSIENT POWER (W) 100 1 ms 10 ms THIS AREA IS LIMITED BY rDS(on) 100 ms SINGLE PULSE TJ = MAX RATED 0.1 1s RTJA = 125 oC/W 0.01 0.01 10 s DC TA = 25 oC 0.1 1 10 100 400 150 2000 1000 VGS = 10 V SINGLE PULSE RTJA = 125 oC/W TA = 25 oC 100 10 1 0.5 -3 10 -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area FDMS86322 RevC 125 Figure 10. Maximum Continuous Drain Current vs Case Temperature 300 1 100 o Figure 9. Unclamped Inductive Switching Capability 10 75 Tc, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) ID, DRAIN CURRENT (A) 10 Figure 8. Capacitance vs Drain to Source Voltage 100 IAS, AVALANCHE CURRENT (A) 1 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDMS86322 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 DUTY CYCLE-DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZTJA 1 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.01 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZTJA x RTJA + TA SINGLE PULSE 0.001 0.0005 -3 10 o RTJA = 125 C/W -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve FDMS86322 RevC 5 www.fairchildsemi.com FDMS86322 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted FDMS86322 N-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout FDMS86322 RevC 6 www.fairchildsemi.com tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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