Preliminary Datasheet FDMS86201 N-Channel PowerTrench® MOSFET 120 V, 35 A, 11.5 m: Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Max rDS(on) = 11.5 m: at VGS = 10 V, ID = 11.6 A Max rDS(on) = 14.5 m: at VGS = 6 V, ID = 10.7 A Advanced Package and Silicon combination for low rDS(on) and high efficiency Application MSL1 robust package design DC-DC Conversion 100% UIL tested RoHS Compliant Bottom Top Pin 1 S D D D S S G D 5 4 G D 6 3 S D 7 2 S D 8 1 S D Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous (Package limited) ID TC = 25 °C -Continuous (Silicon limited) TC = 25 °C -Continuous TA = 25 °C PD TJ, TSTG Units V ±20 V 35 65 (Note 1a) 11.6 (Note 3) 264 -Pulsed A 160 Single Pulse Avalanche Energy EAS Ratings 120 Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 104 (Note 1a) Operating and Storage Junction Temperature Range 2.5 -55 to +150 mJ W °C Thermal Characteristics RTJC Thermal Resistance, Junction to Case RTJA Thermal Resistance, Junction to Ambient 1.2 (Note 1a) 50 °C/W Package Marking and Ordering Information Device Marking FDMS86201 Device FDMS86201 ©2010 Fairchild Semiconductor Corporation FDMS86201 Rev.C Package Power 56 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMS86201 N-Channel PowerTrench® MOSFET April 2010 Preliminary Datasheet Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 PA, VGS = 0 V 'BVDSS 'TJ Breakdown Voltage Temperature Coefficient ID = 250 PA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 96 V, VGS = 0 V IGSS Gate to Source Leakage Current, Forward VGS = ±20 V, VDS = 0 V 120 V 95 mV/°C 1 PA 100 nA 4.0 V On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 PA 'VGS(th) 'TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 PA, referenced to 25 °C rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 2.0 2.6 -10 mV/°C VGS = 10 V, ID = 11.6 A 9.6 11.5 VGS = 6 V, ID = 10.7 A 11.8 14.5 VGS = 10 V, ID = 11.6 A, TJ = 125 °C 15.7 21.5 VDS = 10 V, ID = 11.6 A 39 m: S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 60 V, VGS = 0 V, f = 1 MHz 2056 2735 pF 322 430 pF 15 25 pF : 1.2 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time VDD = 60 V, ID = 11.6 A, VGS = 10 V, RGEN = 6 : tf Fall Time Qg Total Gate Charge VGS = 0 V to 10 V Qg Total Gate Charge VGS = 0 V to 5 V Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = 60 V, ID = 11.6 A 13 24 7.7 16 ns ns 27 44 ns 7.1 15 ns 32 46 nC 18 26 nC 8.1 nC 7.1 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 2 A (Note 2) 0.69 1.2 VGS = 0 V, IS = 11.6 A (Note 2) 0.78 1.3 IF = 11.6 A, di/dt = 100 A/Ps V 66 106 ns 88 140 nC Notes: 1. RTJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTCA is determined by the user's board design. a) 50 °C/W when mounted on a 1 in2 pad of 2 oz copper b) 125 °C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0%. 3. Starting TJ = 25 °C; N-ch: L = 1 mH, IAS = 23 A, VDD = 120 V, VGS = 10 V. FDMS86201 Rev. CB 2 www.fairchildsemi.com FDMS86201 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Preliminary Datasheet 160 ID, DRAIN CURRENT (A) VGS = 10 V VGS = 6 V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 3.0 VGS = 5.5 V 120 VGS = 5 V 80 VGS = 4.5 V 40 PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX 2.5 VGS = 4.5 V 1.5 VGS = 6 V 1.0 0.5 0 1 2 3 4 5 0 40 VDS, DRAIN TO SOURCE VOLTAGE (V) 80 120 160 ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 2.2 40 I = 11.6 A 2.0 D VGS = 10 V rDS(on), DRAIN TO 1.8 1.6 1.4 1.2 1.0 0.8 0.6 SOURCE ON-RESISTANCE (m:) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10 V PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX 0 PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX 30 ID = 11.6 A 20 TJ = 125 oC 10 TJ = 25 oC 0 0.4 -75 -50 -25 0 25 50 75 2 100 125 150 4 TJ, JUNCTION TEMPERATURE (oC) IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX 120 VDS = 5 V 80 150 oC TJ = 25 oC 40 TJ = -55 oC 0 1 2 3 4 5 8 10 Figure 4. On-Resistance vs Gate to Source Voltage 160 TJ = 6 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature ID, DRAIN CURRENT (A) VGS = 5.5 V VGS = 5 V 2.0 6 200 100 VGS = 0 V 10 TJ = 150 oC 1 TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.001 0.0 7 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDMS86201 Rev. CB 3 1.2 www.fairchildsemi.com FDMS86201 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted Preliminary Datasheet 4000 Ciss ID = 11.6 A VDD = 60 V 8 Coss 1000 VDD = 35 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 85 V 6 4 100 Crss f = 1 MHz VGS = 0 V 2 10 0.1 0 0 5 10 15 20 25 30 35 Figure 7. Gate Charge Characteristics 100 75 ID, DRAIN CURRENT (A) 10 TJ = 25 oC TJ = 100 oC TJ = 125 oC VGS = 10 V 60 VGS = 6 V 45 30 Limited by Package 15 o RTJC = 1.2 C/W 1 0.01 0.1 1 10 0 25 100 50 100 125 150 o Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs Case Temperature 200 100 P(PK), PEAK TRANSIENT POWER (W) 1000 10 1ms 10 ms 1 0.1 75 TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) ID, DRAIN CURRENT (A) 10 Figure 8. Capacitance vs Drain to Source Voltage 15 IAS, AVALANCHE CURRENT (A) 1 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) THIS AREA IS LIMITED BY rDS(on) 100 ms 1s SINGLE PULSE TJ = MAX RATED 10 s RTJA = 125 oC/W 0.01 DC o TA = 25 C 0.001 0.01 0.1 1 10 100 600 SINGLE PULSE RTJA = 125 oC/W TA = 25 oC 100 10 1 0.5 -3 10 -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area FDMS86201 Rev. CB VGS = 10 V Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDMS86201 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted Preliminary Datasheet 2 NORMALIZED THERMAL IMPEDANCE, ZTJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZTJA x RTJA + TA SINGLE PULSE o RTJA = 125 C/W 0.001 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve FDMS86201 Rev. CB 5 www.fairchildsemi.com FDMS86201 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted Preliminary Datasheet FDMS86201 N-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout FDMS86201 Rev. CB 6 www.fairchildsemi.com Preliminary Datasheet tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I45 FDMS86201 Rev.CB 7 www.fairchildsemi.com FDMS86201 N-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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