FSV12120V
12 A, 120 V Ultra-Low VF Schottky Rectifier
Features
•
•
•
•
•
•
•
•
Ultra-Low Forward Voltage Drop
Low Thermal Resistance
Very Low Profile: Typical Height of 1.1 mm
Trench Schottky Technology
RoHS Compliant
Green Molding Compound as per IEC61249 Standard
Lead Free in Compliance with EU RoHS 2011/65/EU Directive
Qualified per AEC-Q101 Rev. C Standard
3
2
TO-277
1
Anode 1
3
Anode 2
Cathode
Ordering Information
Part Number
Top Mark
Package
Packing Method
FSV12120V
FSV12120V
TO-277 3L
Tape and Reel
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Value
Unit
VRRM
Peak Repetitive Reverse Voltage
120
V
VRWM
Working Peak Reverse Voltage
120
V
VRMS
RMS Reverse Voltage
85
V
DC Blocking Voltage
120
V
Average Rectified Peak Forward Surge Current
12
A
VR
IF(AV)
IFSM
TJ
TSTG
Parameter
Non-Repetitive Peak Forward Surge Current
220
A
Operating Junction Temperature Range
-55 to +150
°C
Storage Temperature Range
-55 to +150
°C
© 2015 Fairchild Semiconductor Corporation
FSV12120V Rev. 1.1
www.fairchildsemi.com
FSV12120V — 12 A, 120 V Ultra-Low VF Schottky Rectifier
July 2015
Values are at TA = 25°C unless otherwise noted.
Symbol
RθJA
ψJL
Minimum
Maximum
Land Pattern Land Pattern
Parameter
Junction-to-Ambient Thermal Resistance
100
40
Junction-to-Lead Thermal Characteristics,
Thermocouple Soldered to Anode
15
12
Junction-to-Lead Thermal Characteristics,
Thermocouple Soldered to Cathode
6
Unit
°C/W
°C/W
5
Note:
1. The thermal resistances (RθJA & ψJL) are characterized with device mounted on the following FR4 printed circuit
boards, as shown in Figure 1 and Figure 2. PCB size: 76.2 x 114.3 mm. Minimum land pattern size: 4.9 x 4.8 mm
(big pattern, x1), 1.4 x 1.52 mm (small pattern, x2). Maximum land pattern size: 30 x 30 mm (pattern, x2).
Force line trace size = 55 mils, sense line trace size = 4 mils.
F
S
F
S
F
S
F
S
F
S
Figure 1. Minimum Land Pattern of 2 oz Copper
Figure 2. Maximum Land Pattern of 2 oz Copper
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
BVR
Parameter
Conditions
Breakdown Voltage
IR = 0.5 mA
VF
Forward Voltage Drop
IF = 12 A
IR
Reverse Current
VR = 120 V
© 2015 Fairchild Semiconductor Corporation
FSV12120V Rev. 1.1
Min.
Typ.
Max.
120
Unit
V
0.739
0.790
V
5.5
25
μA
www.fairchildsemi.com
2
FSV12120V — 12 A, 120 V Ultra-Low VF Schottky Rectifier
Thermal Characteristics(1)
100
IR - LEAKAGE CURRENT (mA)
IF - FORWARD CURRENT (A)
100
10
o
TA = 150 C
o
TA = 100 C
1
o
TA = 125 C
o
TA = 75 C
0.1
o
TA = 25 C
0.01
0.0
0.2
0.4
o
TA = 150 C
10
o
TA = 125 C
1
o
TA = 100 C
0.1
o
TA = 75 C
0.01
o
TA = 25 C
0.6
0.8
1E-3
20
1.0
VF - FORWARD VOLTAGE (V)
Figure 3. Typical Forward Characteristics
40
50
60
70
80
90
100
Figure 4. Typical Reverse Characteristics
1600
14
1400
12
IF - FORWARD CURRENT (A)
CJ - JUNCTION CAPACITANCE (pF)
30
PERCENT OF RATED REVERSE VOLTAGE (%)
1200
1000
800
600
400
200
10
8
6
4
2
0
1
10
100
0
50
75
100
125
150
TC - CASE TEMPERATURE ( C)
Figure 5. Typical Junction Capacitance
© 2015 Fairchild Semiconductor Corporation
FSV12120V Rev. 1.1
25
o
VR - REVERSE BIAS VOLTAGE (V)
Figure 6. Forward Current Derating Curve
www.fairchildsemi.com
3
FSV12120V — 12 A, 120 V Ultra-Low VF Schottky Rectifier
Typical Performance Characteristics
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Figure 7. 3-LEAD, TO277, JEDEC, SURFACE MOUNT
© 2015 Fairchild Semiconductor Corporation
FSV12120V Rev. 1.1
www.fairchildsemi.com
4
FSV12120V — 12 A, 120 V Ultra-Low VF Schottky Rectifier
Physical Dimensions
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Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I75
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