2SA1188 Silicon PNP Epitaxial REJ03G0639-0300 (Previous ADE-208-1011A) Rev.3.00 Aug.10.2005 Application Low frequency amplifier Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1)) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Rev.3.00 Aug 10, 2005 page 1 of 6 Symbol VCBO VCEO VEBO IC IE PC Tj Tstg Rating –90 –90 –5 –100 100 400 150 –55 to +150 Unit V V V mA mA mW °C °C 2SA1188 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current trnsfer ratio Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE*1 Min –90 –90 –5 — — 250 Typ — — — — — — Max — — — –0.1 –0.1 800 Unit V V V µA µA Collector to emitter saturation voltage VCE(sat) — –0.05 –0.15 V Base to emitter saturation voltage Gain bandwidth product VBE(sat) fT — — –0.7 130 –1.0 — V MHz Cob — 3.2 — pF Collector output capacitance Notes: 1. The 2SA1188 is grouped by hFE as follows. 2. Pulse test D E 250 to 500 400 to 800 Rev.3.00 Aug 10, 2005 page 2 of 6 Test conditions IC = –10 µA, IE = 0 IC = –1 mA, RBE = ∞ IE = –10 µA, IC = 0 VCB = –70 V, IE = 0 VEB = –2 V, IC = 0 VCE = –12 V, 2 IC = –2 mA* IC = –10 mA, 2 IB = –1 mA* VCE = –6 V, IC = –10 mA VCB = –10 V, IE = 0, f = 1 MHz 2SA1188 Main Characteristics –20 Collector Current IC (mA) 600 400 200 0 50 100 0 –2 –16 5 –20 –12 –1 5 –8 – 10 –5 µA –4 150 0 –20 –40 –60 –80 –100 Ambient Temperature Ta (°C) Collector to Emitter Voltage VCE (V) Typical Output Characteristics (2) Typical Transfer Characteristics –20 –100 –18 –8 –1 6 –6 –14 –12 –10 –8 –4 –6 –4 –2 µA –2 IB = 0 0 –4 –8 –12 –16 VCE = –6 V Pulse –10 Ta = 75°C 25 –25 –1.0 –0.1 –20 0 –0.2 –0.4 –0.6 –0.8 –1.0 Collector to Emitter Voltage VCE (V) Base to Emitter Voltage VBE (V) Collector Cutoff Current vs. Collector to Base Voltage Collector Cutoff Current vs. Collector to Emitter Voltage –10.000 –1,000 Collector cutoff current ICEO (nA) Collector cutoff current ICBO (pA) –3 IB = 0 –10 Collector Current IC (mA) Typical Output Characteristics (1) Collector Current IC (mA) Collector power dissipation Pc (mW) Maximum Collector Dissipation Curve IE = 0 –1,000 Ta = 75°C 25 –100 –25 –10 –1 RBE = ∞ –100 Ta = 75°C 25 –10 –25 –1.0 –0.1 0 –20 –40 –60 –80 –100 Collector to Base Voltage VCB (V) Rev.3.00 Aug 10, 2005 page 3 of 6 0 –20 –40 –60 –80 –100 Collector to Emitter Voltage VCE (V) 2SA1188 Emitter Cutoff Current vs. Emitter to Base Voltage IC = 0 Ta = 75°C –100 –10 25 –1.0 –25 –0.1 0 –2 –4 –6 –8 –10 –180 –170 –160 –150 –140 10 100 1k 10 k Collector to Emitter Saturation Voltage vs. Collector Current Ta = 75°C 300 –25 25 100 30 VCE = –12 V Pulse 10 –1 –3 –10 –30 –100 –1.0 IC = 10 IB Pulse –0.3 –0.1 Ta = 75°C –25 25 –0.03 –0.01 –1 –3 –10 –30 Collector Current IC (mA) Collector Current IC (mA) Base to Emitter Saturation Voltage vs. Collector Current Gain Bandwidth Product vs. Collector Current –10 IC = 10 IB Pulse –3 –1.0 25 Ta = –25°C 75 –0.3 –0.1 –1 100 k DC Current Transfer Ratio vs. Collector Current Gain bandwidth product fT (MHz) DC current transfer ratio hFE Typical Value IC = –1 mA Base to Emitter Resistance RBE (Ω) 1,000 Base to emitter saturation voltage VBE (sat) (V) –190 Emitter to Base Voltage VEB (V) Collector to emitter saturation voltage VCE (sat) (V) Emitter cutoff current IEBO (pA) –1,000 Collector to emitter breakdown voltage V(BR) CER (V) Collector to Emitter Breakdown Voltage vs. Base to Emitter Resistance –3 –10 –30 Collector Current IC (mA) Rev.3.00 Aug 10, 2005 page 4 of 6 –100 –100 1,000 VCE = –6 V 500 200 100 50 20 10 –0.5 –1.0 –2 –5 –10 –20 Collector Current IC (mA) –50 2SA1188 Collector output capacitance Cob (pF) Collector Output Capacitance vs. Collector to Base Voltage 100 f = 1 MHz IE = 0 30 10 3 1 –1 –3 –10 –30 –100 Collector to Base Voltage VCB (V) Rev.3.00 Aug 10, 2005 page 5 of 6 2SA1188 Package Dimensions JEITA Package Code RENESAS Code SC-43A PRSS0003DA-A Package Name MASS[Typ.] TO-92(1) / TO-92(1)V Unit: mm 0.25g 4.8 ± 0.3 2.3 Max 0.7 0.60 Max 0.55 Max 12.7 Min 5.0 ± 0.2 3.8 ± 0.3 0.5 Max 1.27 2.54 Ordering Information Part Name 2SA1188DTZ-E 2SA1188ETZ-E Quantity 2500 Shipping Container Hold Box, Radial Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.3.00 Aug 10, 2005 page 6 of 6 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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