BC807 / BC808 PNP Epitaxial Silicon Transistor Features 3 • Switching and Amplifier Applications • Suitable for AF-Driver Stages and Low Power Output Stages • Complement to BC817 / BC818 2 1 SOT-23 1. Base 2. Emitter 3. Collector Ordering Information Part Number Marking Package Packing Method BC80716MTF 9FA SOT-23 3L Tape and Reel BC80725MTF 9FB SOT-23 3L Tape and Reel BC80740MTF 9FC SOT-23 3L Tape and Reel BC80840MTF 9GC SOT-23 3L Tape and Reel Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value BC807 -50 BC808 -30 BC807 -45 BC808 -25 Unit VCES Collector-Emitter Voltage V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage -5 V V IC Collector Current (DC) -800 mA TJ Junction Temperature 150 °C TSTG Storage Temperature -65 to +150 °C © 2002 Fairchild Semiconductor Corporation BC807 / BC808 Rev. 1.1.0 www.fairchildsemi.com 1 BC807 / BC808 — PNP Epitaxial Silicon Transistor November 2014 Values are at TA = 25°C unless otherwise noted. Symbol PD RθJA Parameter Value Unit Power Dissipation 310 mW Derate Above 25°C 2.48 mW/°C Thermal Resistance, Junction-to-Ambient 403 °C/W Note: 1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions BC807 BVCEO Collector-Emitter Breakdown Voltage BVCES Collector-Emitter Breakdown Voltage BVEBO Emitter-Base Breakdown Voltage IE = -0.1 mA, IC = 0 ICES Collector Cut-Off Current VCE = -25 V, VBE = 0 IEBO Emitter Cut-Off Current VEB = -4 V, IC = 0 hFE1 hFE2 BC808 BC807 BC808 DC Current Gain VCE(sat) Collector-Emitter Saturation Voltage VBE(on) fT Cob IC = -10 mA, IB = 0 IC = -0.1 mA, VBE = 0 Min. Typ. Max. -45 V -25 -50 V -30 -5 VCE = -1 V, IC = -100 mA 100 VCE = -1 V, IC = -300 mA 60 Unit V -100 nA -100 nA 630 IC = -500 mA, IB = -50 mA -0.7 V Base-Emitter On Voltage VCE = -1 V, IC = -300 mA -1.2 V Current Gain Bandwidth Product VCE = -5 V, IC = -10 mA, f = 50 MHz Output Capacitance VCB = -10 V, f = 1 MHz 100 MHz 12 pF hFE Classification Classification 16 25 40 hFE1 100 ~ 250 160 ~ 400 250 ~ 630 hFE2 60 ~ 100 ~ 170 ~ © 2002 Fairchild Semiconductor Corporation BC807 / BC808 Rev. 1.1.0 www.fairchildsemi.com 2 BC807 / BC808 — PNP Epitaxial Silicon Transistor Thermal Characteristics(1) -20 IB= mA - 5.0 A I B = - 4.5m I B = 4.0mA A I B = - 3.5m A I B = - 3.0m A I B = - 2.5m mA IB = - 2.0 IB = -400 -300 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT -500 A 1.5m IB = - -200 PT = 60 0mW IB = - 1.0mA IB = - 0.5mA -100 -16 μA - 80 μA - 70 IB= μA - 60 IB= IB P T 0μA =-5 -12 IB= μA - 40 IB = - -8 30μA μA I B = - 20 -4 IB = - 10μA IB = 0 -0 -0 -1 -2 -3 -4 IB = 0 -0 -5 -0 -10 VCE[V], COLLECTOR-EMITTER VOLTAGE VBE(sat), VCE(sat)[V], SATURATION VOLTAGE PULSE hFE, DC CURRENT GAIN VCE = - 2.0V 100 - 1.0V 10 -1 -10 -100 -30 -40 -1000 -10 IC = 10 IB PULSE VCE(sat) -1 -0.1 VBE(sat) -0.01 -0.1 IC[mA], COLLECTOR CURRENT -1 -10 -100 -1000 IC[mA], COLLECTOR CURRENT Figure 3. DC Current Gain Figure 4. Base-Emitter Saturation Voltage and Collector-Emitter Saturation Voltage 100 -1000 f = 1.0MHz Cib, Cob[pF], CAPACITANCE VCE = -1V PULSE -100 -10 -1 -0.1 -0.4 -50 Figure 2. Static Characteristic 1000 1 -0.1 -20 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristic IC[mA], COLLECTOR CURRENT =6 00 mW -0.5 -0.6 -0.7 -0.8 Cob 10 1 -0.1 -0.9 -1 -10 -100 VCB[V], COLLECTOR-BASE VOLTAGE VEB[V], EMITTER-BASE VOLTAGE VBE[V], BASE-EMITTER VOLTAGE Figure 5. Base-Emitter On Voltage © 2002 Fairchild Semiconductor Corporation BC807 / BC808 Rev. 1.1.0 Cib Figure 6. Input Output Capacitance www.fairchildsemi.com 3 BC807 / BC808 — PNP Epitaxial Silicon Transistor Typical Performance Characteristics BC807 / BC808 — PNP Epitaxial Silicon Transistor Typical Performance Characteristics (Continued) fT[MHz], GAIN BANDWIDTH PRODUCT 1000 VCE = -5.0V 100 10 -1 -10 -100 IC[mA], COLLECTOR CURRENT Figure 7. Current Gain Bandwidth Product © 2002 Fairchild Semiconductor Corporation BC807 / BC808 Rev. 1.1.0 www.fairchildsemi.com 4 BC807 / BC808 — PNP Epitaxial Silicon Transistor Physical Dimensions 0.95 2.92±0.20 3 1.40 1.30+0.20 -0.15 1 2.20 2 0.60 0.37 (0.29) 0.95 0.20 1.00 A B 1.90 1.90 LAND PATTERN RECOMMENDATION SEE DETAIL A 1.20 MAX 0.10 0.00 (0.93) 0.10 C C 2.40±0.30 NOTES: UNLESS OTHERWISE SPECIFIED GAGE PLANE 0.23 0.08 A) REFERENCE JEDEC REGISTRATION TO-236, VARIATION AB, ISSUE H. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE INCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR EXTRUSIONS. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 1994. E) DRAWING FILE NAME: MA03DREV10 0.25 0.20 MIN (0.55) SEATING PLANE SCALE: 2X Figure 8. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE © 2002 Fairchild Semiconductor Corporation BC807 / BC808 Rev. 1.1.0 www.fairchildsemi.com 5 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. F-PFS¥ FRFET® SM Global Power Resource GreenBridge¥ Green FPS¥ Green FPS¥ e-Series¥ Gmax¥ GTO¥ IntelliMAX¥ ISOPLANAR¥ Making Small Speakers Sound Louder and Better™ MegaBuck¥ MICROCOUPLER¥ MicroFET¥ MicroPak¥ MicroPak2¥ MillerDrive¥ MotionMax¥ MotionGrid® MTi® MTx® MVN® mWSaver® OptoHiT¥ OPTOLOGIC® AccuPower¥ Awinda® AX-CAP®* BitSiC¥ Build it Now¥ CorePLUS¥ CorePOWER¥ CROSSVOLT¥ CTL¥ Current Transfer Logic¥ DEUXPEED® Dual Cool™ EcoSPARK® EfficientMax¥ ESBC¥ ® Fairchild® Fairchild Semiconductor® FACT Quiet Series¥ FACT® FAST® FastvCore¥ FETBench¥ FPS¥ OPTOPLANAR® ® PowerTrench® PowerXS™ Programmable Active Droop¥ QFET® QS¥ Quiet Series¥ RapidConfigure¥ ¥ Saving our world, 1mW/W/kW at a time™ SignalWise¥ SmartMax¥ SMART START¥ Solutions for Your Success¥ SPM® STEALTH¥ SuperFET® SuperSOT¥-3 SuperSOT¥-6 SuperSOT¥-8 SupreMOS® SyncFET¥ Sync-Lock™ ®* ® TinyBoost TinyBuck® TinyCalc¥ TinyLogic® TINYOPTO¥ TinyPower¥ TinyPWM¥ TinyWire¥ TranSiC¥ TriFault Detect¥ TRUECURRENT®* μSerDes¥ UHC® Ultra FRFET¥ UniFET¥ VCX¥ VisualMax¥ VoltagePlus¥ XS™ Xsens™ ❺™ * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. TO OBTAIN THE LATEST, MOST UP-TO-DATE DATASHEET AND PRODUCT INFORMATION, VISIT OUR WEBSITE AT HTTP://WWW.FAIRCHILDSEMI.COM. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in cause the failure of the life support device or system, or to affect its accordance with instructions for use provided in the labeling, can be safety or effectiveness. reasonably expected to result in a significant injury of the user. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I72 © Fairchild Semiconductor Corporation www.fairchildsemi.com