MMBT3906SL
PNP Epitaxial Silicon Transistor
Features
•
•
•
•
•
•
General-Purpose Amplifier Transistor
Ultra Small Surface Mount Package for All Types (Max. 0.43mm Tall)
Suitable for General Switching and Amplification
Well Suited for Portable Application
As Complementary type, NPN MMBT3904SL is Recommended.
Pb Free
COLLECTOR
3
C
E
1
BASE
B
SOT-923F
Marking : AB
2
EMITTER
Ordering Information
Part Number
Top Mark
Package
Packing Method
MMBT3906SL
AB
SOT-923F 3L
Tape and Reel
Absolute Maximum Ratings(1)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Value
Unit
VCBO
Collector-Base Voltage
Parameter
-40
V
VCEO
Collector-Emitter Voltage
-40
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current
-200
mA
TJ
Junction Temperature
150
°C
-55 to +150
°C
TSTG
Storage Temperature Range
Note:
1. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
© 2008 Fairchild Semiconductor Corporation
MMBT3906SL Rev. 1.4
www.fairchildsemi.com
MMBT3906SL — PNP Epitaxial Silicon Transistor
June 2015
Values are at TA = 25°C unless otherwise noted.
Symbol
PD
RθJA
Parameter
Value
Unit
Power Dissipation, by RθJA
227
mW
Derate Above 25°C
1.81
mW/°C
Thermal Resistance, Junction-to-Ambient(2)
550
°C/W
Note:
2. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics(3)
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
Max.
Unit
BVCBO
Collector-Base Breakdown Voltage
IC = -10 μA, IE = 0
-40
V
BVCEO
Collector-Emitter Breakdown Voltage IC = -1 mA, IB = 0
-40
V
BVEBO
Emitter-Base Breakdown Voltage
IE = -10 μA, IC = 0
-5
V
Collector Cut-Off Current
VCE = -30 V, VEB(OFF) = -0.3 V
ICEX
hFE
DC Current Gain
-50
VCE = -1.0 V, IC = -0.1 mA
60
VCE = -1.0 V, IC = -1 mA
80
VCE = -1.0 V, IC = -10 mA
100
VCE = -1.0 V, IC = -50 mA
60
VCE = -1.0 V, IC = -100 mA
30
nA
300
IC = -10 mA, IB = -1.0 mA
-0.25
IC = -50 mA, IB = -5.0 mA
-0.40
V
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
fT
Current Gain-Bandwidth Product
VCE = -20 V, IC = -10 mA,
f = 100 MHz
Cob
Output Capacitance
VCB = -5 V, IE = 0, f = 1 MHz
7.0
pF
Cib
Input Capacitance
VEB = -0.5 V, IC = 0, f = 1 MHz
15
pF
IC = -10 mA, IB = -1.0 mA
-0.65
IC = -50 mA, IB = -5.0 mA
-0.85
-0.95
250
V
MHz
td
Delay Time
35
ns
tr
Rise Time
35
ns
ts
Storage Time
225
ns
tf
Fall Time
75
ns
VCC = -3 V, IC = -10 mA,
IB1 = -IB2 = -1 mA
Note:
3. DC Item are tested by pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%.
© 2008 Fairchild Semiconductor Corporation
MMBT3906SL Rev. 1.4
www.fairchildsemi.com
2
MMBT3906SL — PNP Epitaxial Silicon Transistor
Thermal Characteristics
1000
o
T J=125 C
o
T J=75 C
Ic=10*Ib
Collector-Emitter Voltage,[mV]
Vce=1V
o
Current Gain
T J=25 C
o
T J=-25 C
100
10
1
10
o
T J=125 C
o
T J=75 C
o
T J=25 C
100
o
T J=-25 C
10
100
100
Collector Current, [mA]
Collector Current, [mA]
Figure 1. DC Current Gain
Figure 2. Collector-Emitter Saturation Voltage
100
Ic=10*Ib
o
Base-Collector Leakage Current,[nA]
Base- Emitter Voltage,[mV]
o
T J=25 C
1000
T J=-25 C
o
T J=75 C
o
T J=125 C
100
10
100
o
T J=125 C
10
o
T J=75 C
o
T J=25 C
o
1
T J=-25 C
10
30
40
Base-Collector Revere Voltage, [V]
Collector Current, [mA]
Figure 3. Base- Emitter Saturation Voltage
Figure 4. Collector- Base Leakage Current
12
300
f=1mhz
250
11
Power Dissipation, [mW]
Base- Collector Juntion Capacitance, Cob[pF]
20
9
8
6
200
150
100
50
0
0
5
10
Base- Collector Reverse Voltage, V cb[V]
25
50
75
100
125
150
o
Ambient Temperature, Ta[ C]
Figure 5. Collector- Base Capacitance
© 2008 Fairchild Semiconductor Corporation
MMBT3906SL Rev. 1.4
0
Figure 6. Power Derating
www.fairchildsemi.com
3
MMBT3906SL — PNP Epitaxial Silicon Transistor
Typical Performance Characteristics
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Figure 7. 3-LEAD, SOT923F, 0.4 mm TALL, FLAT TERMINAL
© 2008 Fairchild Semiconductor Corporation
MMBT3906SL Rev. 1.4
www.fairchildsemi.com
4
MMBT3906SL — PNP Epitaxial Silicon Transistor
Physical Dimensions
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I74
© Fairchild Semiconductor Corporation
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