FFB5551 Dual-Chip NPN General-Purpose Amplifier Features • This device is designed for general-purpose high voltage amplifier. • E1 is Pin 1. E2 B2 E2 C2 B2 B1 C1 E1 C1 C2 B1 E1 SC70-6 Mark: .P1 Figure 1. Device Package Figure 2. Internal Connection Ordering Information Part Number Top Mark Package Packing Method FFB5551 P1 SC70 6L Tape and Reel Absolute Maximum Ratings(1),(2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit VCEO Collector-Emitter Voltage 160 V VCBO Collector-Base Voltage 180 V VEBO Emitter-Base Voltage 6.0 V Collector Current - Continuous 200 mA -55 to 150 °C IC TJ, TSTG Operating and Storage Junction Temperature Range Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operations. © 2003 Fairchild Semiconductor Corporation FFB5551 Rev. 1.1 www.fairchildsemi.com FFB5551 — Dual-Chip NPN General-Purpose Amplifier January 2015 Values are at TA = 25°C unless otherwise noted. Symbol PD RθJA Parameter Max. Unit Total Device Dissipation 200 mW Derate Above 25°C 1.6 mW/°C Thermal Resistance, Junction-to-Ambient 625 °C/W Note: 3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter (4) Conditions Min. Max. Unit BVCEO Collector-Emitter Breakdown Voltage IC = 1.0 mA, IB = 0 160 V BVCBO Collector-Base Breakdown Voltage IC = 100 μA, IE = 0 180 V BVEBO Emitter-Base Breakdown Voltage IE = 10 μA, IC = 0 6.0 V VCB = 120 V, IE = 0 50 nA ICBO Collector Cut-Off Current VCB = 120 V, IE = 0, TA = 100°C 50 μA IEBO Emitter Cut-Off Current VEB = 4.0 V, IC = 0 50 nA VCE = 5 V, IC = 1.0 mA 80 hFE DC Current Gain(4) VCE = 5 V, IC = 10 mA 80 VCE = 5 V, IC = 50 mA 30 VCE(sat) Collector-Emitter Saturation Voltage(4) VBE(sat) Base-Emitter Saturation Voltage(4) fT Cobo 250 IC = 10 mA, IB = 1.0 mA 0.15 IC = 50 mA, IB = 5.0 mA 0.20 IC = 10 mA, IB = 1.0 mA 1.0 IC = 50 mA, IB = 5.0 mA 1.0 Current Gain Bandwidth Product VCE = 10 V, IC = 10 mA, f = 100 MHz Output Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz 100 V V 300 MHz 6.0 pF Note: 4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%. © 2003 Fairchild Semiconductor Corporation FFB5551 Rev. 1.1 www.fairchildsemi.com 2 FFB5551 — Dual-Chip NPN General-Purpose Amplifier Thermal Characteristics(3) 0 VCE(SAT)[V], SATURATION VOLTAGE Ta=125 C hFE, DC CURRENT GAIN 100 0 Ta=25 C 0 Ta=-40 C 10 1 0.1 1E-4 1E-3 0.01 0.1 IC=10IB 0 10 Ta=25 C 1 0 Ta=125 C 0 Ta=-40 C 0.1 1 1E-3 0.01 IC[A], COLLECTOR CURRENT Figure 4. Collector-Emitter Saturation Voltage 10 0.50 0 Ta=25 C 0 Ta=-40 C VCE=5V 0.45 IC=10IB IC[A], COLLECTOR CURRENT VBE(SAT)[V], SATURATION VOLTAGE 0.1 IC[A], COLLECTOR CURRENT Figure 3. DC Current Gain 1 Ta=25 C 0 0 Ta=25 C 0 Ta=125 C 0 Ta=25 C 0.40 0.35 0.30 0.25 0.20 0 Ta=25 C 0.15 0 Ta=125 C 0.10 0 Ta=-40 C 0.05 0.1 1E-3 0.01 0.1 0.00 0.2 1 IC[A], COLLECTOR CURRENT 0.6 0.8 1.0 1.2 1.4 VBE[V], BASE-EMITTER VOLTAGE Figure 5. Base-Emitter Saturation Voltage © 2003 Fairchild Semiconductor Corporation FFB5551 Rev. 1.1 0.4 Figure 6. Base-Emitter On Voltage www.fairchildsemi.com 3 FFB5551 — Dual-Chip NPN General-Purpose Amplifier Typical Performance Characteristics FFB5551 — Dual-Chip NPN General-Purpose Amplifier Physical Dimensions SYMM C L 2.00±0.20 0.65 A 0.50 MIN 6 4 B PIN ONE 1.25±0.10 1 1.90 3 0.30 0.15 (0.25) 0.40 MIN 0.10 0.65 A B 1.30 LAND PATTERN RECOMMENDATION 1.30 1.00 0.80 SEE DETAIL A 1.10 0.80 0.10 C 0.10 0.00 C 2.10±0.30 SEATING PLANE NOTES: UNLESS OTHERWISE SPECIFIED GAGE PLANE (R0.10) 0.25 0.10 0.20 A) THIS PACKAGE CONFORMS TO EIAJ SC-88, 1996. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS DO NOT INCLUDE BURRS OR MOLD FLASH. D) DRAWING FILENAME: MKT-MAA06AREV6 30° 0° 0.46 0.26 SCALE: 60X Figure 7. 6-LEAD, SC70, EIAJ SC-88, 1.25 MM WIDE © 2003 Fairchild Semiconductor Corporation FFB5551 Rev. 1.1 www.fairchildsemi.com 4 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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