FAIRCHILD FDLL4448

1N/FDLL 914A/B / 916/A/B / 4148 / 4448
Small Signal Diode
Cathode Band
LL-34 COLOR BAND MARKING
DEVICE
SOD80
LL-34
DO-35
THE PLACEMENT OF THE EXPANSION GAP
HAS NO RELATIONSHIP TO THE LOCATION
OF THE CATHODE TERMINAL
Cathode is denoted with a black band
1ST BAND
FDLL914
FDLL914A
FDLL914B
FDLL4148
FDLL4448
BLACK
BLACK
BLACK
BLACK
BLACK
-1st band denotes cathode terminal
and has wider width
Absolute Maximum Ratings(1)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
VRRM
Parameter
Value
Units
Maximum Repetitive Reverse Voltage
100
V
IO
Average Rectified Forward Current
200
mA
IF
DC Forward Current
300
mA
If
Recurrent Peak Forward Current
400
mA
Pulse Width = 1.0 s
1.0
A
Pulse Width = 1.0 μs
4.0
A
-65 to +200
°C
IFSM
Non-repetitive Peak Forward Surge Current
TSTG
Storage Temperature Range
Operating Junction Temperature
175
TJ
Note:
1. These ratings are limiting values above which the serviceability of the diode may be impaired.
°C
Thermal Characteristics
Symbol
PD
RθJA
Max.
Parameter
1N/FDLL 914/A/B / 4148 / 4448
Units
Power Dissipation
500
mW
Thermal Resistance, Junction to Ambient
300
°C/W
© 2007 Fairchild Semiconductor Corporation
1N/FDLL 914A/B / 916/A/B / 4148 / 4448 Rev. 1.1.1
www.fairchildsemi.com
1
1N/FDLL 914A/B / 916/A/B / 4148 / 4448 — Small Signal Diode
April 2013
Values are at TA = 25°C unless otherwise noted.
Symbol
VR
VF
Parameter
IR= 100 μA
Breakdown Voltage
Forward Voltage
Test Conditions
Max.
100
Units
V
IR= 5.0 μA
75
1N914B / 4448
IF= 5.0 mA
0.62
0.72
V
1N916B
IF= 5.0 mA
0.63
0.73
V
1N914 / 916 / 4148 IF= 10 mA
1.0
V
1N914A / 916A
IF= 20 mA
1.0
V
1N916B
IF= 20 mA
1.0
V
1N914B / 4448
IF= 100 mA
Reverse Leakage
V
1.0
V
0.025
μA
VR= 20 V, TA= 150°C
50
μA
VR= 20 V
IR
Min.
VR= 75 V
5.0
μA
1N916A/B/4448
VR = 0, f = 1.0 MHz
2.0
pF
1N914A/B/4148
VR = 0, f = 1.0 MHz
4.0
pF
IF = 10 mA, VR = 6.0 V (600 mA)
Irr = 1.0 mA, RL = 100 Ω
4.0
ns
CT
Total Capacitance
trr
Reverse Recovery Time
Note:
2. Non-recurrent square wave PW= 8.3 ms.
© 2007 Fairchild Semiconductor Corporation
1N/FDLL 914A/B / 916/A/B / 4148 / 4448 Rev. 1.1.1
www.fairchildsemi.com
2
1N/FDLL 914A/B / 916/A/B / 4148 / 4448 — Small Signal Diode
Electrical Characteristics(2)
120
o
Ta= 25 C
160
o
[nA]
100
R
150
80
Reverse Current, I
Reverse Voltage, V
R
[V]
Ta=25 C
140
130
120
60
40
20
0
110
1
2
3
5
10
20
30
50
100
10
20
30
50
70
Reverse Voltage, VR [V]
100
Reverse Current, IR [uA]
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten (10) Degree C increase in Temperature
Figure 1. Reverse Voltage vs. Reverse Current
BV - 1.0 to 100 μA
Figure 2. Reverse Current vs. Reverse Voltage
IR - 10 to 100 V
750
550
o
Ta= 25 C
o
Ta= 25 C
[mV]
F
650
R
[mV]
500
Forward Voltage, V
Forward Voltage, V
450
400
350
300
250
700
600
550
500
450
1
2
3
5
10
20
30
50
0.1
100
0.2
Forward Current, IF [uA]
0.3
0.5
1
2
3
5
10
Forward Current, IF [mA]
Figure 3. Forward Voltage vs. Forward Current
VF - 1 to 100 μA
Figure 4. Forward Voltage vs. Forward Current
VF - 0.1 to 10 mA
900
1.6
o
Forward Voltage, V F [mV]
[mV]
Ta= 25 C
800
Typical
o
Ta= -40 C
700
Forward Voltage, V
F
1.4
1.2
1.0
0.8
o
Ta= 25 C
600
500
o
Ta= +65 C
400
300
0.6
10
20
30
50
100
200
300
500
800
0.01
Forward Current, IF [mA]
0.1
0.3
1
3
10
Forward Current, IF [mA]
Figure 5. Forward Voltage vs. Forward Current
VF - 10 to 800 mA
© 2007 Fairchild Semiconductor Corporation
1N/FDLL 914A/B / 916/A/B / 4148 / 4448 Rev. 1.1.1
0.03
Figure 6. Forward Voltage vs. Ambient Temperature
VF - 0.01 - 20 mA (- 40 to +65°C)
www.fairchildsemi.com
3
1N/FDLL 914A/B / 916/A/B / 4148 / 4448 — Small Signal Diode
Typical Performance Characteristics
4.0
0.90
o
Ta = 25 C
[ns]
o
3.5
Reverse Recovery Time, t
Total Capacitance (pF)
rr
TA = 25 C
0.85
0.80
3.0
2.5
2.0
1.5
1.0
10
0.75
0
2
4
6
8
10
12
14
20
30
40
50
60
Reverse Recovery Current, Irr [mA]
REVERSE VOLTAGE (V)
IF = 10mA , IRR = 1.0 mA , Rloop = 100 Ohms
Figure 8. Reverse Recovery Time vs
Reverse Recovery Current
Figure 7. Total Capacitance
500
Power Dissipation, PD [mW]
500
400
Current (mA)
400
DO-35
300
300
IF(
AV)
200
100
- AVE
RAG
E RE
CTIF
IED C
URRE
NT mA
SOT-23
200
100
0
0
0
50
100
0
150
100
150
200
Temperature [ C]
Ambient Temperature ( C)
Figure 10. Power Derating Curve
Figure 9. Average Rectified Current (IF(AV))
vs Ambient Temperature (TA)
© 2007 Fairchild Semiconductor Corporation
1N/FDLL 914A/B / 916/A/B / 4148 / 4448 Rev. 1.1.1
50
o
o
www.fairchildsemi.com
4
1N/FDLL 914A/B / 916/A/B / 4148 / 4448 — Small Signal Diode
Typical Performance Characteristics (Continued)
1N/FDLL 914A/B / 916/A/B / 4148 / 4448 — Small Signal Diode
Physical Dimensions
SOD-80
0.50
0.30
C
R
0.30
0.20
1.50
1.30
2.64 REF
3.60
3.30
NOTES: UNLESS OTHERWISE SPECIFIED
A) PACKAGE STANDARD REFERENCE:
JEDEC DO-213, VARIATION AC.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C
CORNER RADIUS IS OPTIONAL.
D) DRAWING FILE NAME: SOD80A REV01
Figure 11. 2-TERMINAL, SOD-80, JEDEC DO-213AC, MINI-MELF
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/packaging/.
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
http://www.fairchildsemi.com/packaging/tr/SOD80A_tnr.pdf.
© 2007 Fairchild Semiconductor Corporation
1N/FDLL 914A/B / 916/A/B / 4148 / 4448 Rev. 1.1.1
www.fairchildsemi.com
5
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Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
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changes at any time without notice to improve the design.
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The datasheet is for reference information only.
Rev. I64
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