1N/FDLL 914A/B / 916/A/B / 4148 / 4448 Small Signal Diode LL-34 COLOR BAND MARKING DEVICE FDLL914 FDLL914A FDLL914B FDLL4148 FDLL4448 LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL Cathode is denoted with a black band 1ST BAND BLACK BLACK BLACK BLACK BLACK -1st band denotes cathode terminal and has wider width Absolute Maximum Ratings(1) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol VRRM Parameter Value Units Maximum Repetitive Reverse Voltage 100 V IO Average Rectified Forward Current 200 mA IF DC Forward Current 300 mA If Recurrent Peak Forward Current 400 mA Pulse Width = 1.0 s 1.0 A Pulse Width = 1.0 μs 4.0 A -65 to +200 °C IFSM Non-repetitive Peak Forward Surge Current TSTG Storage Temperature Range Operating Junction Temperature 175 TJ Note: 1. These ratings are limiting values above which the serviceability of the diode may be impaired. °C Thermal Characteristics Symbol PD RθJA Max. Parameter 1N/FDLL 914/A/B / 4148 / 4448 Units Power Dissipation 500 mW Thermal Resistance, Junction to Ambient 300 °C/W © 2007 Fairchild Semiconductor Corporation 1N/FDLL 914A/B / 916/A/B / 4148 / 4448 Rev. 1.1.0 www.fairchildsemi.com 1 1N/FDLL 914A/B / 916/A/B / 4148 / 4448 — Small Signal Diode March 2013 Values are at TA=25°C unless otherwise noted. Symbol VR VF Parameter IR= 100 μA Breakdown Voltage Forward Voltage Test Conditions Max. 100 Units V IR= 5.0 μA 75 1N914B / 4448 IF= 5.0 mA 0.62 0.72 V 1N916B IF= 5.0 mA 0.63 0.73 V 1N914 / 916 / 4148 IF= 10 mA 1.0 V 1N914A / 916A IF= 20 mA 1.0 V 1N916B IF= 20 mA 1.0 V 1N914B / 4448 IF= 100 mA Reverse Leakage V 1.0 V 0.025 μA VR= 20 V, TA= 150°C 50 μA VR= 20 V IR Min. VR= 75 V 5.0 μA 1N916A/B/4448 VR = 0, f = 1.0 MHz 2.0 pF 1N914A/B/4148 VR = 0, f = 1.0 MHz 4.0 pF IF = 10 mA, VR = 6.0 V (600 mA) Irr = 1.0 mA, RL = 100 Ω 4.0 ns CT Total Capacitance trr Reverse Recovery Time Note: 2. Non-recurrent square wave PW= 8.3 ms. © 2007 Fairchild Semiconductor Corporation 1N/FDLL 914A/B / 916/A/B / 4148 / 4448 Rev. 1.1.0 www.fairchildsemi.com 2 1N/FDLL 914A/B / 916/A/B / 4148 / 4448 — Small Signal Diode Electrical Characteristics(2) 120 o Ta= 25 C 160 o [nA] 100 R 150 80 Reverse Current, I Reverse Voltage, V R [V] Ta=25 C 140 130 120 60 40 20 0 110 1 2 3 5 10 20 30 50 100 10 20 30 50 70 Reverse Voltage, VR [V] 100 Reverse Current, IR [uA] GENERAL RULE: The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature Figure 1. Reverse Voltage vs. Reverse Current BV - 1.0 to 100 μA Figure 2. Reverse Current vs. Reverse Voltage IR - 10 to 100 V 750 550 o Ta= 25 C o Ta= 25 C [mV] F 650 R [mV] 500 Forward Voltage, V Forward Voltage, V 450 400 350 300 250 700 600 550 500 450 1 2 3 5 10 20 30 50 0.1 100 0.2 Forward Current, IF [uA] 0.3 0.5 1 2 3 5 10 Forward Current, IF [mA] Figure 3. Forward Voltage vs. Forward Current VF - 1 to 100 μA Figure 4. Forward Voltage vs. Forward Current VF - 0.1 to 10 mA 900 1.6 o Forward Voltage, V F [mV] [mV] Ta= 25 C 800 Typical o Ta= -40 C 700 Forward Voltage, V F 1.4 1.2 1.0 0.8 o Ta= 25 C 600 500 o Ta= +65 C 400 300 0.6 10 20 30 50 100 200 300 500 800 0.01 Forward Current, IF [mA] 0.1 0.3 1 3 10 Forward Current, IF [mA] Figure 5. Forward Voltage vs. Forward Current VF - 10 to 800 mA © 2007 Fairchild Semiconductor Corporation 1N/FDLL 914A/B / 916/A/B / 4148 / 4448 Rev. 1.1.0 0.03 Figure 6. Forward Voltage vs. Ambient Temperature VF - 0.01 - 20 mA (- 40 to +65°C) www.fairchildsemi.com 3 1N/FDLL 914A/B / 916/A/B / 4148 / 4448 — Small Signal Diode Typical Performance Characteristics 4.0 0.90 o Ta = 25 C [ns] o 3.5 Reverse Recovery Time, t Total Capacitance (pF) rr TA = 25 C 0.85 0.80 3.0 2.5 2.0 1.5 1.0 10 0.75 0 2 4 6 8 10 12 14 20 30 40 50 60 Reverse Recovery Current, Irr [mA] REVERSE VOLTAGE (V) IF = 10mA , IRR = 1.0 mA , Rloop = 100 Ohms Figure 8. Reverse Recovery Time vs. Reverse Recovery Current Figure 7. Total Capacitance 500 Power Dissipation, PD [mW] 500 400 Current (mA) 400 DO-35 300 300 IF( AV) 200 100 - AVE RAG E RE CTIF IED C URRE NT mA SOT-23 200 100 0 0 0 50 100 0 150 100 150 200 Temperature [ C] Ambient Temperature ( C) Figure 10. Power Derating Curve Figure 9. Average Rectified Current (IF(AV)) vs. Ambient Temperature (TA) © 2007 Fairchild Semiconductor Corporation 1N/FDLL 914A/B / 916/A/B / 4148 / 4448 Rev. 1.1.0 50 o o www.fairchildsemi.com 4 1N/FDLL 914A/B / 916/A/B / 4148 / 4448 — Small Signal Diode Typical Performance Characteristics (Continued) 1N/FDLL 914A/B / 916/A/B / 4148 / 4448 — Small Signal Diode Physical Dimensions SOD-80 0.50 0.30 C R 0.30 0.20 1.50 1.30 2.64 REF 3.60 3.30 NOTES: UNLESS OTHERWISE SPECIFIED A) PACKAGE STANDARD REFERENCE: JEDEC DO-213, VARIATION AC. B) ALL DIMENSIONS ARE IN MILLIMETERS. C CORNER RADIUS IS OPTIONAL. D) DRAWING FILE NAME: SOD80A REV01 Figure 11. 2-TERMINAL, SOD-80, JEDEC DO-213AC, MINI-MELF Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/packaging/. For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area: http://www.fairchildsemi.com/packaging/tr/SOD80A_tnr.pdf. © 2007 Fairchild Semiconductor Corporation 1N/FDLL 914A/B / 916/A/B / 4148 / 4448 Rev. 1.1.0 www.fairchildsemi.com 5 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. FPS¥ F-PFS¥ FRFET® SM Global Power Resource GreenBridge¥ Green FPS¥ Green FPS¥ e-Series¥ Gmax¥ GTO¥ IntelliMAX¥ ISOPLANAR¥ Making Small Speakers Sound Louder and Better™ MegaBuck¥ MICROCOUPLER¥ MicroFET¥ MicroPak¥ MicroPak2¥ MillerDrive¥ MotionMax¥ mWSaver¥ OptoHiT¥ OPTOLOGIC® OPTOPLANAR® 2Cool¥ AccuPower¥ AX-CAP®* BitSiC¥ Build it Now¥ CorePLUS¥ CorePOWER¥ CROSSVOLT¥ CTL¥ Current Transfer Logic¥ DEUXPEED® Dual Cool™ EcoSPARK® EfficientMax¥ ESBC¥ ® Fairchild® Fairchild Semiconductor® FACT Quiet Series¥ FACT® FAST® FastvCore¥ FETBench¥ Sync-Lock™ ® PowerTrench® PowerXS™ Programmable Active Droop¥ QFET® QS¥ Quiet Series¥ RapidConfigure¥ ¥ Saving our world, 1mW/W/kW at a time™ SignalWise¥ SmartMax¥ SMART START¥ Solutions for Your Success¥ SPM® STEALTH¥ SuperFET® SuperSOT¥-3 SuperSOT¥-6 SuperSOT¥-8 SupreMOS® SyncFET¥ ®* TinyBoost¥ TinyBuck¥ TinyCalc¥ TinyLogic® TINYOPTO¥ TinyPower¥ TinyPWM¥ TinyWire¥ TranSiC¥ TriFault Detect¥ TRUECURRENT®* PSerDes¥ UHC® Ultra FRFET¥ UniFET¥ VCX¥ VisualMax¥ VoltagePlus¥ XS™ * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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