FMBM5401 PNP General-Purpose Amplifier C2 Description E1 C1 This device has matched dies in SuperSOT-6. B2 E2 pin #1 B1 SuperSOTTM-6 Mark: .4S2 Ordering Information Part Number Marking Package Packing Method FMBM5401 4S2 SSOT 6L Tape and Reel Absolute Maximum Ratings(1),(2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit VCEO Collector-Emitter Voltage -150 V VCBO Collector-Base Voltage -160 V VEBO Emitter-Base Voltage -5.0 V -600 mA -55 to +150 °C IC TJ, TSTG Collector Current - Continuous Operating and Storage Junction Temperature Range Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operations. Thermal Characteristics(3) Values are at TA = 25°C unless otherwise noted. Symbol PD RθJA Parameter Value Unit Total Power Dissipation 700 mW Thermal Resistance, Junction-to-Ambient, Total 180 °C/W Note: 3. Device mounted on a 1 in 2 pad of 2 oz copper. © 2005 Fairchild Semiconductor Corporation FMBM5401 Rev. 1.1 www.fairchildsemi.com FMBM5401 — PNP General-Purpose Amplifier April 2015 Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions (4) Min. Max. Unit BVCEO Collector-Emitter Breakdown Voltage IC = -1.0 mA, IB = 0 -150 V BVCBO Collector-Base Breakdown Voltage IC = -100 μA, IE = 0 -160 V BVEBO Emitter-Base Breakdown Voltage IE = -10 μA, IC = 0 -5.0 V ICBO Collector Cut-Off Current IEBO Emitter Cut-Off Current hFE1 DIVID1 hFE2 DIVID2 hFE3 DIVID3 DC Current Gain (4) VCB = -120 V, IE = 0 -50 nA VCB = -120 V, IE = 0, TA = 100°C -50 μA VEB = -3.0 V, IC = 0 -50 nA VCE = -5 V, IC = -1 mA 50 Variation Ratio of hFE1 Between Die 1 and Die 2 hFE1(Die1) / hFE1(Die2) 0.9 1.1 DC Current Gain(4) VCE = -5 V, IC = -10 mA 60 240 Variation Ratio of hFE2 Between Die 1 and Die 2 hFE2(Die1) / hFE2(Die2) 0.95 1.05 DC Current Gain(4) VCE = -5 V, IC = -50 mA 50 Variation Ratio of hFE3 Between Die 1 and Die 2 hFE3(Die1) / hFE3(Die2) 0.9 1.1 IC = -10 mA, IB = -1 mA -0.2 IC = -50 mA, IB = -5 mA -0.5 IC = -10 mA, IB = -1 mA -1 IC = -50 mA, IB = -5 mA -1 Base-Emitter On Voltage(4) VCE = -5 V, IC = -10 mA -1 V Difference of VBE(on) Between Die1 and Die 2 VBE(on)(Die1) - VBE(on)(Die2) -8 8 mV Current Gain Bandwidth Product VCE = -10 V, IC = -10 mA, f = 100 MHz 100 300 MHz Cob Output Capacitance VCB = -10 V, IE = 0, f = 1 MHz 6.0 pF NF Noise Figure VCE = -5.0 V, IC = -250 μA, RS = 1.0 kΩ, f = 10 Hz to 15.7 kHz 8.0 dB VCE(sat) Collector-Emitter Saturation Voltage(4) VBE(sat) Base-Emitter Saturation Voltage(4) VBE(on) DEL fT V V Note: 4. Pulse test: Pulse width ≤ 300 ms, duty cycle ≤ 2% © 2005 Fairchild Semiconductor Corporation FMBM5401 Rev. 1.1 www.fairchildsemi.com 2 FMBM5401 — PNP General-Purpose Amplifier Electrical Characteristics β 0.4 VCESAT - COLLECTOR-EMITTER VOLTAGE (V) hFE - TYPICAL PULSED CURRENT GAIN 200 VCE = 5V β = 10 β 0.3 150 o 125 C o 25 C 50 o - 40 C 0 1E-4 o 125 C 0.1 1E-3 0.01 0.1 o - 40 C 0.0 0.1 1 IC - COLLECTOR CURRENT (A) 1 10 100 IC - COLLECTOR CURRENT (mA) Figure 2. Collector-Emitter Saturation Voltage vs. Collector Current VBC(ON) - BASE-EMITTER ON VOLTAGE (V) Figure 1. Typical Pulsed Current Gain vs. Collector Current 1.0 VBESAT - BASE-EMITTER VOLTAGE (V) 1.0 o - 40 C 0.8 o - 40 C 0.8 o 25 C o 25 C 0.6 0.6 o 125 C β o 125 C 0.4 0.4 β 0.2 0.1 1 β = 10 10 VCE = 5V 0.2 0.1 100 1 10 100 IC - COLLECTOR CURRENT (mA) IC - COLLECTOR CURRENT (mA) Figure 4. Base-Emitter On Voltage vs.Collector Current BV CER - BREAKDOWN VOLTAGE (V) Figure 3. Base-Emitter Saturation Voltage vs. Collector Current I CBO - COLLECTOR CURRENT (nA) o 25 C 0.2 100 100 Between Emitter-Base 220 V CB = 10 0V 10 210 200 1 190 0.1 180 25 50 75 100 125 T A - AM BIENT TE MPE RATURE (°C) 150 170 0.1 Figure 5. Collector Cut-Off Current vs. Ambient Temperature © 2005 Fairchild Semiconductor Corporation FMBM5401 Rev. 1.1 1 10 RESISTANCEΩ(kΩ ) 100 1000 Figure 6. Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base www.fairchildsemi.com 3 FMBM5401 — PNP General-Purpose Amplifier Typical Performance Characteristics FMBM5401 — PNP General-Purpose Amplifier Typical Performance Characteristics (Continued) 80 CAPACITANCE (pF) f = 1.0 MHz 60 40 C eb 20 C cb 0 0.1 1 10 100 V R - REVERSE BIAS VOLTAGE(V) Figure 7. Input and Output Capacitance vs. Reverse Voltage © 2005 Fairchild Semiconductor Corporation FMBM5401 Rev. 1.1 www.fairchildsemi.com 4 FMBM5401 — PNP General-Purpose Amplifier Physical Dimensions Figure 8. 6-LEAD, SUPERSOT6, JEDEC MO-193, 1.6MM WIDE © 2005 Fairchild Semiconductor Corporation FMBM5401 Rev. 1.1 www.fairchildsemi.com 5 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. F-PFS¥ FRFET® SM Global Power Resource GreenBridge¥ Green FPS¥ Green FPS¥ e-Series¥ Gmax¥ GTO¥ IntelliMAX¥ ISOPLANAR¥ Making Small Speakers Sound Louder and Better™ MegaBuck¥ MICROCOUPLER¥ MicroFET¥ MicroPak¥ MicroPak2¥ MillerDrive¥ MotionMax¥ MotionGrid® MTi® MTx® MVN® mWSaver® OptoHiT¥ OPTOLOGIC® AccuPower¥ AttitudeEngine™ Awinda® AX-CAP®* BitSiC¥ Build it Now¥ CorePLUS¥ CorePOWER¥ CROSSVOLT¥ CTL¥ Current Transfer Logic¥ DEUXPEED® Dual Cool™ EcoSPARK® EfficientMax¥ ESBC¥ ® ® Fairchild Fairchild Semiconductor® FACT Quiet Series¥ FACT® FAST® FastvCore¥ FETBench¥ FPS¥ OPTOPLANAR® ® Power Supply WebDesigner¥ PowerTrench® PowerXS™ Programmable Active Droop¥ QFET® QS¥ Quiet Series¥ RapidConfigure¥ ¥ Saving our world, 1mW/W/kW at a time™ SignalWise¥ SmartMax¥ SMART START¥ Solutions for Your Success¥ SPM® STEALTH¥ SuperFET® SuperSOT¥-3 SuperSOT¥-6 SuperSOT¥-8 SupreMOS® SyncFET¥ Sync-Lock™ ®* ® TinyBoost TinyBuck® TinyCalc¥ TinyLogic® TINYOPTO¥ TinyPower¥ TinyPWM¥ TinyWire¥ TranSiC¥ TriFault Detect¥ TRUECURRENT®* μSerDes¥ UHC® Ultra FRFET¥ UniFET¥ VCX¥ VisualMax¥ VoltagePlus¥ XS™ Xsens™ ❺™ * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. TO OBTAIN THE LATEST, MOST UP-TO-DATE DATASHEET AND PRODUCT INFORMATION, VISIT OUR WEBSITE AT HTTP://WWW.FAIRCHILDSEMI.COM. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are 2. A critical component in any component of a life support, device, or intended for surgical implant into the body or (b) support or sustain system whose failure to perform can be reasonably expected to life, and (c) whose failure to perform when properly used in cause the failure of the life support device or system, or to affect its accordance with instructions for use provided in the labeling, can be safety or effectiveness. reasonably expected to result in a significant injury of the user. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I74 © Fairchild Semiconductor Corporation www.fairchildsemi.com