MMBTA56 / PZTA56 PNP General-Purpose Amplifier Description This device is designed for general-purpose amplifier applications at collector currents to 300 mA. Sourced from process 73. C C E E SOT-23 Mark: 2G C SOT-223 B Figure 1. MMBTA56 Device Package B Figure 2. PZTA56 Device Package Ordering Information Part Number Marking Package Packing Method MMBTA56 2G SOT-23 3L Tape and Reel PZTA56 A56 SOT-223 4L Tape and Reel Absolute Maximum Ratings(1),(2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Value Unit VCES Collector-Emitter Voltage -80 V VCBO Collector-Base Voltage -80 V VEBO Emitter-Base Voltage -4.0 V Collector Current - Continuous -500 mA -55 to +150 °C IC TJ , TSTG Parameter Operating and Storage Junction Temperature Range Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operations. © 1997 Fairchild Semiconductor Corporation MMBTA56 / PZTA56 Rev. 1.4 www.fairchildsemi.com MMBTA56 / PZTA56 — PNP General-Purpose Amplifier February 2015 Values are at TA = 25°C unless otherwise noted. Symbol PD RθJA Max. Parameter (3) Unit PZTA56(4) MMBTA56 Total Device Dissipation 350 1000 mW Derate Above 25°C 2.8 8.0 mW/°C Thermal Resistance, Junction-to-Ambient 357 125 °C/W Notes: 3. Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead minimum 6cm2. 4. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Max. Unit V(BR)CEO Collector-Emitter Breakdown Voltage(5) IC = -1.0 mA, IB = 0 -80 V V(BR)CBO Collector-Base Breakdown Voltage IC = -100 μA, IE = 0 -60 V V(BR)EBO Emitter-Base Breakdown Voltage IE = -100 μA, IC = 0 -4.0 V ICEO Collector Cut-Off Current VCE = -60 V, IB = 0 -0.1 μA ICBO Collector Cut-Off Current VCB = -80 V, IE = 0 -0.1 μA hFE DC Current Gain IC = -100 mA, IB = -10 mA -0.25 V -1.2 V IC = -10 mA, VCE = -1.0 V 100 IC = -100 mA, VCE = -1.0 V 100 VCE(sat) Collector-Emitter Saturation Voltage VBE(on) Base-Emitter On Voltage IC = -100 mA, VCE = -1.0 V Current Gain - Bandwidth Product IC = -100 mA, VCE = -1.0 V, f = 100 MHz fT 50 MHz Note: 5. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%. © 1997 Fairchild Semiconductor Corporation MMBTA56 / PZTA56 Rev. 1.4 www.fairchildsemi.com 2 MMBTA56 / PZTA56 — PNP General-Purpose Amplifier Thermal Characteristics V CESAT - COLLECTOR EMITTE R VOLTAGE (V) TYP ICAL PULSED CURRE NT GAIN FE - h 300 0.8 VCE = 1V 250 0.6 125 °C 200 0.4 150 25 °C 100 0.001 0.01 0.1 I C - COLLECTOR CURRENT (A) β = 10 1 - 40 °C 0.8 125 °C 0.6 0.4 10 100 I C - COLLECTOR CURRE NT (mA) 125 °C 0 10 1000 1.2 V CE = 1V 1 - 40 °C 0.8 0.6 25 °C 125 °C 0.4 0.2 Figure 5. Base-Emitter Saturation Voltage vs. Collector Current 0 0.1 1 10 100 I C - COLLECTOR CURRENT (mA) 1000 Figure 6. Base-Emitter On Voltage vs. Collector Current 10 f = 1.0 MHz V CB = 60V 100 CAPACITANCE (pF) I CBO - COLLECTOR CURRENT (nA) 100 I C - COLLECTOR CURRE NT (mA) Figure 4. Collector-Emitter Saturation Voltage vs. Collector Current V BE( ON)- BAS E EMITTER ON VOLTAGE (V) V BESAT - BASE EM ITTE R VOLTAGE (V) Figure 3. Typical Pulsed Current Gain vs. Collector Current 25 °C 25 °C - 40 °C 0.2 - 40 °C 50 1.2 β = 10 1 0.1 0.01 C ib Cob 0.001 25 50 75 100 T A - AMBIENT TEMPERATURE (º C) 125 0.1 10 100 Figure 8. Input and Output Capacitance vs. Reverse Voltage Figure 7. Collector Cut-Off Current vs. Ambient Temperature © 1997 Fairchild Semiconductor Corporation MMBTA56 / PZTA56 Rev. 1.4 1 V CE - COLLECTOR VOLTAGE (V) www.fairchildsemi.com 3 MMBTA56 / PZTA56 — PNP General-Purpose Amplifier Typical Performance Characteristics f T - GAIN BANDWIDTH PRODUCT (MHz) V CE - COLLECTOR-EMITTER VOLTAGE (V) 10 350 VCE = 5V 300 T A = 25°C 8 250 6 200 IC = 1 mA 100 mA 10 mA 150 4 100 2 0 3000 5000 10000 20000 30000 50000 50 0 1 10 100 IC - COLLECTOR CURRENT (mA) I B - BASE CURRENT (uA) Figure 10. Gain Bandwidth Product vs. Collector Current Figure 9. Collector Saturation Region P D - POWER DISSIPATION (W) 1 SOT-223 0.75 TO-92 0.5 SOT-23 0.25 0 0 25 50 75 100 TEMPERATURE ( oC) 125 150 Figure 11. Power Dissipation vs. Ambient Temperature © 1997 Fairchild Semiconductor Corporation MMBTA56 / PZTA56 Rev. 1.4 www.fairchildsemi.com 4 MMBTA56 / PZTA56 — PNP General-Purpose Amplifier Typical Performance Characteristics (Continued) MMBTA56 / PZTA56 — PNP General-Purpose Amplifier Physical Dimensions 0.95 2.92±0.20 3 1.40 1.30+0.20 -0.15 1 2.20 2 0.60 0.37 (0.29) 0.95 0.20 1.00 A B 1.90 1.90 LAND PATTERN RECOMMENDATION SEE DETAIL A 1.20 MAX 0.10 0.00 (0.93) 0.10 C C 2.40±0.30 NOTES: UNLESS OTHERWISE SPECIFIED GAGE PLANE 0.23 0.08 A) REFERENCE JEDEC REGISTRATION TO-236, VARIATION AB, ISSUE H. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE INCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR EXTRUSIONS. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 1994. E) DRAWING FILE NAME: MA03DREV10 0.25 0.20 MIN (0.55) SEATING PLANE SCALE: 2X Figure 12. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE © 1997 Fairchild Semiconductor Corporation MMBTA56 / PZTA56 Rev. 1.4 www.fairchildsemi.com 5 MMBTA56 / PZTA56 — PNP General-Purpose Amplifier Physical Dimensions (Continued) Figure 13. MOLDED PACKAGING, SOT-223, 4-LEAD © 1997 Fairchild Semiconductor Corporation MMBTA56 / PZTA56 Rev. 1.4 www.fairchildsemi.com 6 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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