FDPF18N20FT_G N-Channel UniFETTM FRFET® MOSFET 200 V, 18 A, 140 m � Features Description • RDS(on) = 129 mΩ (Typ.) @ VGS = 10 V, ID = 9 A • Low Gate Charge (Typ. 20 nC) • Low Crss (Typ. 24 pF) UniFETTM MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode’s reverse recovery performance of UniFET FRFET® has been enhanced by lifetime control. Its trr is less than 100nsec and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET’s body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. • 100% Avalanche Tested • Improve dv/dt Capability • RoHS Compliant Applications • LCD/LED TV • Consumer Appliances • Lighting • Uninterruptible Power Supply • AC-DC Power Supply D G D S G TO-220F S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage FDPF18N20FT_G 200 Unit V ±30 V -Continuous (TC = 25oC) 18* -Continuous (TC = 100oC) 10.8* ID Drain Current IDM Drain Current (Note 1) 72* A EAS Single Pulsed Avalanche Energy (Note 2) 324 mJ IAR Avalanche Current (Note 1) 18 A EAR Repetitive Avalanche Energy (Note 1) 10 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns - Pulsed (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL - Derate above 25oC A 35 W 0.27 W/oC -55 to +150 oC 300 o FDPF18N20FT_G Unit C *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction to Case, Max. 3.6 RθCS Thermal Resistance, Case to Sink, Typ. 0.5 RθJA Thermal Resistance, Junction to Ambient, Max. 62.5 ©2012 Fairchild Semiconductor Corporation FDPF18N20FT_G Rev.C0 1 oC/W www.fairchildsemi.com FDPF18N20FT_G N-Channel UniFETTM FRFET® MOSFET April 2013 Device Marking FDPF18N20FT Device FDPF18N20F_G Package TO-220F Eco Status Green/RoHS Reel Size - Tape Width - Quantity 50 For Fairchild's definition of "green"Eco Status, please visit: http://www.fairchildsemi.com/company/green/rohs_green.html Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics BVDSS ∆BVDSS ∆TJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID = 250µA, VGS = 0V, TJ = 25oC 200 - - V ID = 250µA, Referenced to 25oC - 0.2 - V/oC IDSS Zero Gate Voltage Drain Current VDS = 200V, VGS = 0V - - 10 VDS = 160V, TC = 125oC - - 100 IGSS Gate to Body Leakage Current VGS = ±30V, VDS = 0V - - ±100 3.0 - 5.0 V - 0.12 0.14 Ω - 13.6 - S - 885 1180 pF - 200 270 pF - 24 35 pF - 20 26 nC - 5 - nC - 9 - nC - 16 40 ns - 50 110 ns - 50 110 ns - 40 90 ns µA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250µA Static Drain to Source On Resistance VGS = 10V, ID = 9A gFS Forward Transconductance VDS = 20V, ID = 9A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 25V, VGS = 0V f = 1MHz VDS = 160V, ID = 18A VGS = 10V (Note 4, 5) Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 100V, ID = 18A RG = 25Ω (Note 4, 5) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 18 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 72 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 18A - - 1.5 V trr Reverse Recovery Time - 80 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 18A dIF/dt = 100A/µs - 240 - nC (Note 4) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 2mH, IAS = 18A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 18A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics ©2012 Fairchild Semiconductor Corporation FDPF18N20FT_G Rev.C0 2 www.fairchildsemi.com FDPF18N20FT_G N-Channel UniFETTM FRFET® MOSFET Package Marking and Ordering Information TC = 25oC unless otherwise noted Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 30 VGS = 10.0V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 10 ID,Drain Current[A] ID,Drain Current[A] 50 o 10 150 C o 25 C *Notes: 1. 250µs Pulse Test 1 *Notes: 1. VDS = 20V 2. 250µs Pulse Test o 2. TC = 25 C 1 0.1 1 VDS,Drain-Source Voltage[V] 10 4 5 6 VGS,Gate-Source Voltage[V] 0.25 100 IS, Reverse Drain Current [A] Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature RDS(ON) [Ω], Drain-Source On-Resistance Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 0.20 VGS = 10V VGS = 20V 0.15 o 150 C o 25 C 10 *Notes: 1. VGS = 0V o *Note: TJ = 25 C 2. 250µs Pulse Test 0.10 0 10 20 30 ID, Drain Current [A] 40 1 0.0 50 Figure 5. Capacitance Characteristics 2.0 10 1500 VGS, Gate-Source Voltage [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd *Note: 1. VGS = 0V 2. f = 1MHz Ciss 1000 Coss 500 VDS = 40V VDS = 100V VDS = 160V 8 6 4 2 Crss 0 0.1 0.4 0.8 1.2 1.6 VSD, Body Diode Forward Voltage [V] Figure 6. Gate Charge Characteristics 2000 Capacitances [pF] 7 *Note: ID = 18A 0 1 10 VDS, Drain-Source Voltage [V] ©2012 Fairchild Semiconductor Corporation FDPF18N20FT_G Rev.C0 0 30 3 6 12 18 Qg, Total Gate Charge [nC] 24 www.fairchildsemi.com FDPF18N20FT_G N-Channel UniFETTM FRFET® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. Maximum Safe Operating Area - FDP18N20F 100 20µs ID, Drain Current [A] BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 100µs 10 1ms Operation in This Area is Limited by R DS(on) 1 DC *Notes: 0.1 0.9 o 1. TC = 25 C *Notes: 1. VGS = 0V 2. ID = 250µA 0.8 -100 10ms o 2. TJ = 150 C 3. Single Pulse 0.01 -50 0 50 100 150 o TJ, Junction Temperature [ C] 1 200 10 100 VDS, Drain-Source Voltage [V] 600 Figure 9. Maximum Drain Current vs. Case Temperature 20 ID, Drain Current [A] 16 12 8 4 0 25 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 10. Transient Thermal Response Curve - FDP18N20F 2 Thermal Response [ZθJC] 1 0.5 0.2 0.1 PDM 0.1 t1 0.05 t2 0.02 *Notes: 0.01 0.01 o 1. ZθJC(t) = 3.0 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse -5 10 ©2012 Fairchild Semiconductor Corporation FDPF18N20FT_G Rev.C0 -4 10 -3 -2 -1 10 10 10 1 Rectangular Pulse Duration [sec] 4 10 2 10 www.fairchildsemi.com FDPF18N20FT_G N-Channel UniFETTM FRFET® MOSFET Typical Performance Characteristics (Continued) FDPF18N20FT_G N-Channel UniFETTM FRFET® MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms ©2012 Fairchild Semiconductor Corporation FDPF18N20FT_G Rev.C0 5 www.fairchildsemi.com FDPF18N20FT_G N-Channel UniFETTM FRFET® MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VDD VSD Body Diode Forward Voltage Drop ©2012 Fairchild Semiconductor Corporation FDPF18N20FT_G Rev.C0 6 www.fairchildsemi.com FDPF18N20FT_G N-Channel UniFETTM FRFET® MOSFET Mechanical Dimensions TO-220M03 Dimensions in Millimeters ©2012 Fairchild Semiconductor Corporation FDPF18N20FT_G Rev.C0 6 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. 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