3TA0GKxxNB Three Phase Thyristor Module (Half Bridge) K1 K2 K3 K2 G2 K1 G1 K1 3 2 1 G3 K3 K3 Type 3TA0GK03NB 3TA0GK04NB VRSM V 400 500 Symbol IT(AV) IT(RMS) K2 Dimensions in mm (1mm = 0.0394") K2 G2 K1 G1 A G3 K3 A VRRM V 300 400 Test Conditions Single phase, half wave, 180oC conduction,TC=114oC 1/2cycle, 50Hz/60Hz, peak value, non-repetitive Maximum Ratings Unit 80 125 A 2300/2500 A 2 It 26000 A2s PGM PG(AV) 10 1 W IFGM 3 A VFGM VRGM 10 5 V 60 A/us ITSM di/dt IG=150mA, Tj=25oC, VD=1/2VDRM, dIG/dt=1A/us -30...+150 150 -30...+125 TVJ TVJM Tstg Ms Mt Weight to heatsink M6 to terminals M5 3 ~ 5 2.5 ~ 5 140 o C Nm g 3TA0GKxxNB Three Phase Thyristor Module (Half Bridge) Symbol Test Conditions IDRM IRRM at VDRM, single phase, half wave, Tj=150oC VTM o On-State Current 240A, Tj=25 C Inst. measurement IGT Tj=25oC, IT=1A, VD=6V VGD Tj=150oC, VD=1/2VDRM tgt IT=100A, IG=200mA, Tj=25oC, VD=1/2VDRM, dIG/dt=1A/us dv/dt IH RthJC min. typ. max. Unit 10 10 mA 1.25 V 150 mA V 0.25 o Tj=150 C, VD=2/3VDRM, Exponential wave Tj=25oC 10 V/us 150 * International standard package * Copper base plate * Glass passivated chips * RoHS compliance mA 100 Junction to case (1/3 Module) FEATURES us 0.34 APPLICATIONS ADVANTAGES o C/W * Welding Machine Power Supply * Space and weight savings * DC Power Supply * Simple mounting with two screws * Improved temperature and power cycling * Reduced protection circuits 3TA0GKxxNB ０． ５ Transient Thermal Impedance １６０ Allowable Case Temperature（℃） Average On-State Current Vs Maximum Allowable Case Temperature（Single phase half wave） Per one erement 2 １５０ ０． ４ Junction to case Per one element 。 360 １４０ ０． ３ : Conduction Angle １３０ １２０ ０． ２ １１０ ０． １ １００ ０ １０ー３ ２ ５ １０ー２ ２ ５ １０ー１ ２ Time t（sec） ５ １００ ２ ５ １０１ ３０００ Surge On-State Current（A） On-State Current（A） ２ １０３ ５ ２ １０２ ５ ２ 0． ５ １ １． ５ ２ ２． ５ Surge On-State Current Rating （Non-Repetitive） Per one element Tj＝25℃ 60Hz １５００ １０００ ０ １ ３ ２ D.C. ２ ５ １０ ５０ ２０ １００ θ＝180゜ θ＝120゜ θ＝90゜ θ＝60゜ θ＝30゜ Gate Characteristics Peak Forward Gate Voltage（10V） １０１ Gate Voltage（V） Power Dissipation（W） １５０ Time（cycles） Per one erement ５０ １００ ２０００ Average On-State Current Vs Power Dissipation （Single phase half wave） １００ ５０ ２５００ On-State Voltage（V） １５０ D.C. Average On-State Current（A） On-State Voltage max １０１ ０ θ＝60゜ θ＝120゜ θ＝30゜ θ＝90゜ θ＝180゜ ０ ０ 2 ５ Av er Pe Po ak G we a （ r 1 te 0W ag eG ate ２ we （ r １００ 25℃ 150℃ ５ ） Po 1W ） –30℃ Peak Gate Currennt（3A) Transient Thermal Impedance θj-c（℃/W） Three Phase Thyristor Module (Half Bridge) 。 360 : Conduction Angle ０ ０ ５０ １００ Average On-State Current（A） １５０ ２ １０１ Maximum Gate Voltage that will not terigger any unit ２ ５ １０２ ２ ５ Gate Current（mA） １０３ ２ ５