3TA150GKxxNB Three Phase Thyristor Module (Half Bridge) K3 K1 K2 K2 G2 K1 K3 G1 3 G3 K3 K3 Type 3TA150GK03NB 3TA150GK04NB VRSM V 400 500 Symbol IT(AV) IT(RMS) ITSM 2 Dimensions in mm (1mm = 0.0394") K1 1 K2 G2 K1 G1 A G3 K2 A VRRM V 300 400 Test Conditions Single phase, half wave, 180oC conduction,TC=114oC 1/2cycle, 50Hz/60Hz, peak value, non-repetitive Maximum Ratings Unit 150 235 A 4000/4400 A 2 It 375000 A2s PGM PG(AV) 10 1 W IFGM 3 A VFGM VRGM 10 5 V 60 A/us di/dt IG=150mA, Tj=25oC, VD=1/2VDRM, dIG/dt=1A/us -30...+150 150 -30...+125 TVJ TVJM Tstg Ms Mt Weight to heatsink M6 to terminals M6 o C 3 ~ 5 2.5 ~ 5 Nm 210 g 3TA150GKxxNB Three Phase Thyristor Module (Half Bridge) Symbol Test Conditions IDRM IRRM at VDRM, single phase, half wave, Tj=150oC VTM o On-State Current 450A, Tj=25 C Inst. measurement IGT Tj=150oC, VD=1/2VDRM tgt IT=100A, IG=200mA, Tj=25oC, VD=1/2VDRM, dIG/dt=1A/us IH RthJC typ. max. Unit 30 30 mA 1.25 V 150 mA Tj=25oC, IT=1A, VD=6V VGD dv/dt min. V 0.25 o Tj=150 C, VD=2/3VDRM, Exponential wave Tj=25oC 10 V/us 150 * International standard package * Copper base plate * Glass passivated chips * RoHS compliance mA 100 Junction to case (1/3 Module) FEATURES us 0.16 APPLICATIONS ADVANTAGES o C/W * Welding Machine Power Supply * Space and weight savings * DC Power Supply * Simple mounting with two screws * Improved temperature and power cycling * Reduced protection circuits 3TA150GKxxNB Transient Thermal Impedance １６０ Average On-State Current Vs Maximum Allowable Case Temperature（Single phase half wave） １５０ Junction to Case ０． ２ Per one element １４０ 2 １３０ Per one element 。 360 θ: Conduction Angle １２０ １１０ ０． １ １００ ０ ー３ １０ ２ ５ １０ー２ ２ ５ １０ー１ ２ ５ １００ ２ θ＝30゜ θ＝60゜ ５ １０１ Time t（sec） ０ On-State Voltage max ３５００ ２ D.C. D.C. ２０ ４０ ６０ ８０ １００ １２０ １４０ １６０ １８０ ２００ ２２０ Surge On-State Current Rating （Non-Repetitive） Per one element Tj＝25℃ ３０００ ５ ２５００ Maximum Maximum Tj=150℃ ２ ２ １０ 60Hz ２０００ ５ １ ５００ ２ １０１ ５ ０ ０． ５ １． ０ １． ５ ２． ０ ２． ５ ０ １ ３． ０ ２ ５ On-State Voltage（V） Average On-State Current Vs Power Dissipation （Single phase half wave） ２ Gate Voltage（V） θ＝180゜ １００ θ＝120゜ θ＝90゜ θ＝60゜ Per one element θ＝30゜ 2 ５０ ２０ ５０ ５ Av er e Ga Po we （ r 150℃ １０ 25℃ 1W ） -30℃ ５ ２ ag P Po eak we G （ r ate 10 W ） te ２ 。 360 Peak （10V） Peak Forward Forward Gate Gate Voltag Voltag （10V） Maximum Gate Voltage that will not terigger any unit : Conduction Angle ０ ０ ５０ １００ １５０ １００ Gate Characteristics １０ ２００ １５０ １０ Time（cycles） D.C. Power Dissipation（W） θ＝30゜ θ＝120゜ Average On-State Current（A） １０３ ２５０ θ＝180゜ θ＝90゜ ９０ Peak Gate Current（3V） ５ On-State Current（A） Allowable Case Temperature（℃） ０． ３ Surge On-State Current（A） Transient Thermal Impedance θj-c（℃/W） Three Phase Thyristor Module (Half Bridge) ２００ Average On-State Current（A） ２５０ １０ ２ ５ １０２ ２ ５ Gate Current（mA） １０３ ２ ５