3TA200GKxxNB Three Phase Thyristor Module (Half Bridge) K3 K1 K2 K2 G2 K1 K3 G1 3 G3 K3 K3 Type 3TA200GK03NB 3TA200GK04NB VRSM V 400 500 Symbol IT(AV) IT(RMS) ITSM 2 Dimensions in mm (1mm = 0.0394") K1 1 K2 G2 K1 G1 A G3 K2 A VRRM V 300 400 Test Conditions Single phase, half wave, 180oC conduction,TC=114oC 1/2cycle, 50Hz/60Hz, peak value, non-repetitive Maximum Ratings Unit 200 314 A 5400/6000 A 2 It 495000 A2s PGM PG(AV) 10 1 W IFGM 3 A VFGM VRGM 10 5 V 60 A/us di/dt IG=150mA, Tj=25oC, VD=1/2VDRM, dIG/dt=1A/us -30...+150 150 -30...+125 TVJ TVJM Tstg Ms Mt Weight to heatsink M6 to terminals M6 o C 3 ~ 5 2.5 ~ 5 Nm 210 g 3TA200GKxxNB Three Phase Thyristor Module (Half Bridge) Symbol Test Conditions IDRM IRRM at VDRM, single phase, half wave, Tj=150oC VTM o On-State Current 630A, Tj=25 C Inst. measurement IGT Tj=150oC, VD=1/2VDRM tgt IT=100A, IG=200mA, Tj=25oC, VD=1/2VDRM, dIG/dt=1A/us IH RthJC typ. max. Unit 60 60 mA 1.25 V 150 mA Tj=25oC, IT=1A, VD=6V VGD dv/dt min. V 0.25 o Tj=150 C, VD=2/3VDRM, Exponential wave Tj=25oC 10 V/us 150 * International standard package * Copper base plate * Glass passivated chips * RoHS compliance mA 100 Junction to case (1/3 Module) FEATURES us 0.12 APPLICATIONS ADVANTAGES o C/W * Welding Machine Power Supply * Space and weight savings * DC Power Supply * Simple mounting with two screws * Improved temperature and power cycling * Reduced protection circuits 3TA200GKxxNB ０． １４ Transient Thermal Impedance Allowable Case Temperature（℃） Transient Thermal Impedance θj-c（℃/W） Three Phase Thyristor Module (Half Bridge) １５０ Junction to Case ０． １２ Per one element 。 360 θ：Conduction Angle １３０ １２０ ０． ０８ １１０ ０． ０６ １００ ０． ０４ Per one element ０． ０２ ー２ ５ １０ ２ ー１ ５ １０ ２ ０ Time t（sec） θ＝30゜ θ＝90゜ θ＝180゜ θ＝60゜ θ＝120゜ ０ １ ５ １０ ２ ９０ ５ １０ １００ 直流 D.C. ２００ ３００ ４００ Average On-State Current（A） On-State Voltage max ６０００ Surge On-State Current（A） ２ On-State Current（A） 2 １４０ ０． １０ ０． ００ １０ー３ ２ Average On-State Current Vs Maximum Allowable Case Temperature（Single phase half wave） １０３ ５ ２ １０２ ５ ２ Surge On-State Current Rating （Non-Repetitive） Per one element Tj＝25℃ ５０００ ４０００ ６０Hz ３０００ ２０００ １０００ １ １． ０ １． ５ ０ １ ２． ０ ２ ４００ ２ １０２ ３００ θ＝180゜ θ＝120゜ θ＝90゜ 2 θ＝60゜ θ＝30゜ Gate Characteristics Peak Forward Gate Voltag（10V） １０１ 。 360 : Conduction Angle Gate Voltage（V） Power Dissipation（W） 直流 D.C. １００ ５ ２ Time（cycles） Average On-State Current Vs Power Dissipation （Single phase half wave） ２００ １０１ ５ On-State Voltage（V） Av er ag e ５ Ga te ２ Po we （ r Peak Gate Current（３A） １０ ０ P Po eak we G （ r ate 10 W ） 1W ） １０ 150℃ ５ 25℃ −30℃ Per one element ０ ０ ２ １００ ２００ Average On-State Current（A） ３００ Maximum Gate Voltage that will not terigger any unit １ １０ ２ ５ １０２ ２ ５ １０３ Gate Current（mA） ２ ５