TSM1N45D 450V N-Channel Power MOSFET SOP-8 Pin Definition: 1. Source 1 2. Gate 1 3. Source 2 4. Gate 2 PRODUCT SUMMARY 8. Drain 1 7. Drain 1 6. Drain 2 5. Drain 2 VDS (V) RDS(on)(mΩ) ID (A) 450 4.25 @ VGS =10V 0.5 General Description The TSM1N45 is N-Channel enhancement mode power field effect transistors are produced using planar DMOS technology process. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand higher energy pulse in the avalanche and commutation mode. There devices are well suited for electronic ballasts base and half bridge configuration. Features ● ● ● ● ● Block Diagram Low gate charge @ typical 6.5nC Low Crss @ typical 6.5pF Avalanche energy specified Improved dv/dt capability Gate-Source Voltage ±50V guaranteed Ordering Information Part No. Package Packing TSM1N45DCS RLG SOP-8 2.5Kpcs / 13” Reel Dual N-Channel MOSFET Note: “G” denotes for Halogen Free Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) Single Pulse Drain to Source Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) o Maximum Power Dissipation @Ta = 25 C Operating Junction and Storage Temperature Range VDS VGS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG 450 ±50 0.5 4 108 0.5 0.25 5.5 0.9 -55 to +150 V V A A mJ A mJ V/ns W o C Symbol Limit Thermal Performance Parameter Thermal Resistance - Junction to Ambient Notes: Surface mounted on FR4 board t ≤ 10sec RӨJA 1/8 80 Unit o C/W Version: A12 TSM1N45D 450V N-Channel Power MOSFET Electrical Specifications (Ta=25oC, unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage Conditions VGS = 0V, ID = 250uA VGS = 10V, ID = 0.25A VDS = VGS, ID = 250uA VDS = VGS, ID = 250mA VDS = 450V, VGS = 0V VGS = ±50V, VDS = 0V VDS = 50V, ID = 0.25A IS = 1A, VGS = 0V Symbol Min Typ Max Unit BVDSS RDS(ON) 450 -2.3 3.1 ----- -3.4 3.0 4.2 --0.7 -- -4.25 3.7 4.9 10 ±100 -1.5 V Ω VGS(TH) V Zero Gate Voltage Drain Current IDSS uA Gate Body Leakage IGSS nA Forward Transconductance gfs S Diode Forward Voltage VSD V Dynamic Total Gate Charge -6.5 -Qg VDS = 360V, ID = 0.5A, nC Gate-Source Charge VGS = 10V Qgs -0.9 -(Note 4,5) Gate-Drain Charge Qgd -3.2 -Input Capacitance Ciss -185 -VDS = 25V, VGS = 0V, pF Output Capacitance Coss -29 -f = 1.0MHz Reverse Transfer Capacitance Crss -6.5 -Switching Turn-On Delay Time td(on) -7.5 -VGS = 25V, ID = 0.5A, Turn-On Rise Time tr -21 -VDS = 225V, RG = 25Ω nS Turn-Off Delay Time td(off) -23 -(Note 4,5) Turn-Off Fall Time tf -36 -Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current IS --0.5 A Maximum Pulsed Drain-Source Diode Forward Current ISM --4.0 A Drain-Source Diode Forward Voltage VGS = 25V, IS = 0.5A VSD --1.4 V V = 25V, I = 0.5A. GS S Reverse Recovery Time trr -102 -nS dIF/dt = 100A/µS Reverse Recovery Charge Qrr -0.26 -µC (Note 4) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L=75mH, IAS=1.6A, VDD=50V, RG=25Ω, Starting TJ=25ºC 3. ISD ≤ 0.5A, di/dt ≤ 300A/µS, VDD ≤BVDSS, Starting TJ=25ºC 4. Pulse test: pulse width ≤ 300uS, duty cycle ≤ 2% 5. Essentially independent of operating temperature 6. a) Reference point of the is the drain RӨJL lead b) When mounted on 3”x4.5” FR-4 PCB without any pad copper in a still air environment (RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistance. RӨCA is determined by the user’s board design) 2/8 Version: A12 TSM1N45D 450V N-Channel Power MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform EAS Test Circuit & Waveform 3/8 Version: A12 TSM1N45D 450V N-Channel Power MOSFET Diode Reverse Recovery Time Test Circuit & Waveform 4/8 Version: A12 TSM1N45D 450V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 5/8 Version: A12 TSM1N45D 450V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) On-Resistance vs. Gate-Source Voltage Threshold Voltage Maximum Safe Operating Area Normalized Thermal Transient Impedance, Junction-to-Ambient 6/8 Version: A12 TSM1N45D 450V N-Channel Power MOSFET SOP-8 Mechanical Drawing DIM A B C D F G K M P R 7/8 SOP-8 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX. 4.80 5.00 0.189 0.196 3.80 4.00 0.150 0.157 1.35 1.75 0.054 0.068 0.35 0.49 0.014 0.019 0.40 1.25 0.016 0.049 1.27BSC 0.05BSC 0.10 0.25 0.004 0.009 0º 7º 0º 7º 5.80 6.20 0.229 0.244 0.25 0.50 0.010 0.019 Version: A12 TSM1N45D 450V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. 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