TSM3N80 800V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 800 4.2 @ VGS =10V 1.5 General Description TO-251 (IPAK) The TSM3N80 TO-252 (DPAK) N-Channel Power MOSFET is produced by new advance planar process. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Block Diagram Features ● ● ● ● Low RDS(ON) 3.3Ω (Typ.) Low gate charge typical @ 19nC (Typ.) Low Crss typical @ 10.2pF (Typ.) Improved dv/dt capability Ordering Information Part No. Package Packing TSM3N80CH C5G TO-251 75pcs / Tube TSM3N80CP ROG TO-252 2.5Kpcs / 13” Reel TSM3N80CZ C0 TO-220 50pcs / Tube TSM3N80CI C0 ITO-220 Note: “G” denotes for Halogen Free N-Channel MOSFET 50pcs / Tube Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit IPAK/DPAK ITO-220 TO-220 Unit Drain-Source Voltage VDS 800 V Gate-Source Voltage VGS ±30 V 3 A 1.83 A Tc = 25ºC Continuous Drain Current Tc = 100ºC ID Pulsed Drain Current * IDM 12 A Single Pulse Avalanche Energy (Note 2) EAS 283 mJ Avalanche Current (Repetitive) (Note 1) IAR 3 A Repetitive Avalanche Energy (Note 1) EAR 9.4 mJ dv/dt 4.5 V/ns Peak Diode Recovery dv/dt (Note 3) o Total Power Dissipation @ TC = 25 C Operating Junction Temperature Storage Temperature Range Note: Limited by maximum junction temperature PTOT TJ TSTG 1/12 94 32 150 -55 to +150 94 W ºC o C Version: B12 TSM3N80 800V N-Channel Power MOSFET Thermal Performance Symbol IPAK/DPAK ITO-220 TO-220 Thermal Resistance - Junction to Case RӨJC 1.33 3.9 1.33 Thermal Resistance - Junction to Ambient RӨJA 110 Parameter Unit o C/W 62.5 Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA BVDSS 800 -- -- V Drain-Source On-State Resistance VGS = 10V, ID = 1.5A RDS(ON) -- 3.3 4.2 Ω Gate Threshold Voltage VDS = VGS, ID = 250uA VGS(TH) 2 -- 4 V Zero Gate Voltage Drain Current VDS = 800V, VGS = 0V IDSS -- -- 10 uA Gate Body Leakage VGS = ±30V, VDS = 0V IGSS -- -- ±100 nA Forward Transfer Conductance VDS = 30V, ID = 1.5A gfs -- 3.7 -- S Total Gate Charge VDS = 640V, ID = 3A, Qg -- 19 -- Gate-Source Charge VGS = 10V Qgs -- 4 -- Gate-Drain Charge (Note 4,5) Qgd -- 7.6 -- Ciss -- 696 -- Coss -- 65 -- Crss -- 10.2 -- td(on) -- 48 -- tr -- 36 -- td(off) -- 106 -- tf -- 41 -- Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz nC pF Switching Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VGS = 10V, ID = 3A, VDD = 400V, RG =25Ω (Note 4,5) nS Source-Drain Diode Ratings and Characteristic Source Current Integral reverse diode in IS -- -- 3 A Source Current (Pulse) the MOSFET ISM -- -- 12 A Diode Forward Voltage IS = 3A, VGS = 0V VSD -- -- 1.5 V Reverse Recovery Time VGS = 0V, IS =3A, tfr -- 370 -- nS dIF/dt = 100A/us Reverse Recovery Charge Qfr -Note 1: Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature Note 2: VDD = 50V, IAS=3A, L=59mH, RG =25Ω, Starting TJ=25ºC Note 3: ISD≤4A, di/dt≤200A/uS, VDD≤BVDSS, Starting TJ=25ºC Note 4: Pulse test: pulse width ≤300uS, duty cycle ≤2% Note 5: Essentially Independent of Operating Temperature 1.8 -- uC 2/12 Version: B12 TSM3N80 800V N-Channel Power MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform EAS Test Circuit & Waveform 3/12 Version: B12 TSM3N80 800V N-Channel Power MOSFET Diode Reverse Recovery Time Test Circuit & Waveform 4/12 Version: B12 TSM3N80 800V N-Channel Power MOSFET Electrical Characteristics Curve (Tc = 25oC, unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 5/12 Version: B12 TSM3N80 800V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Drain Current vs. Case Temperature BVDSS vs. Junction Temperature Maximum Safe Operating Area Capacitance vs. Drain-Source Voltage Maximum Safe Operating Area (ITO-220) 6/12 Version: B12 TSM3N80 800V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Thermal Transient Impedance, Junction-to-Ambient (ITO-220) 7/12 Version: B12 TSM3N80 800V N-Channel Power MOSFET TO-220 Mechanical Drawing DIM A B C D E F G H J K L M N O P 8/12 TO-220 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 10.00 10.50 0.394 0.413 3.74 3.91 0.147 0.154 2.44 2.94 0.096 0.116 -6.35 -0.250 0.38 1.10 0.015 0.043 2.34 2.71 0.092 0.107 4.69 5.43 0.185 0.214 12.70 14.73 0.500 0.580 8.38 9.38 0.330 0.369 14.22 16.51 0.560 0.650 3.55 4.82 0.140 0.190 1.16 1.40 0.046 0.055 27.70 29.62 1.091 1.166 2.03 2.92 0.080 0.115 0.25 0.61 0.010 0.024 Version: B12 TSM3N80 800V N-Channel Power MOSFET ITO-220 Mechanical Drawing DIM A B C D E F G H I J K L M N O 9/12 ITO-220 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 10.04 10.07 0.395 0.396 6.20 (typ.) 0.244 (typ.) 2.20 (typ.) 0.087 (typ.) ∮1.40 (typ.) ∮0.055 (typ.) 15.0 15.20 0.591 0.598 0.52 0.54 0.020 0.021 2.35 2.73 0.093 0.107 13.50 13.55 0.531 0.533 1.11 1.49 0.044 0.058 2.60 2.80 0.102 0.110 4.49 4.50 0.176 0.177 1.15 (typ.) 0.045 (typ.) 3.03 3.05 0.119 0.120 2.60 2.80 0.102 0.110 6.55 6.65 0.258 0.262 Version: B12 TSM3N80 800V N-Channel Power MOSFET TO-251 Mechanical Drawing 10/12 Version: B12 TSM3N80 800V N-Channel Power MOSFET TO-252 Mechanical Drawing Unit: Millimeters 11/12 Version: B12 TSM3N80 800V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. 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