TSC TSM3N80

TSM3N80
800V N-Channel Power MOSFET
TO-220
ITO-220
Pin Definition:
1. Gate
2. Drain
3. Source
PRODUCT SUMMARY
VDS (V)
RDS(on)(Ω)
ID (A)
800
4.2 @ VGS =10V
1.5
General Description
TO-251
(IPAK)
The TSM3N80
TO-252
(DPAK)
N-Channel
Power
MOSFET
is
produced by new advance planar process. This
advanced technology has been especially tailored to
minimize
on-state
resistance,
provide
superior
switching performance, and withstand high energy
pulse in the avalanche and commutation mode.
Block Diagram
Features
●
●
●
●
Low RDS(ON) 3.3Ω (Typ.)
Low gate charge typical @ 19nC (Typ.)
Low Crss typical @ 10.2pF (Typ.)
Improved dv/dt capability
Ordering Information
Part No.
Package
Packing
TSM3N80CH C5G
TO-251
75pcs / Tube
TSM3N80CP ROG
TO-252
2.5Kpcs / 13” Reel
TSM3N80CZ C0
TO-220
50pcs / Tube
TSM3N80CI C0
ITO-220
Note: “G” denotes for Halogen Free
N-Channel MOSFET
50pcs / Tube
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Limit
IPAK/DPAK
ITO-220
TO-220
Unit
Drain-Source Voltage
VDS
800
V
Gate-Source Voltage
VGS
±30
V
3
A
1.83
A
Tc = 25ºC
Continuous Drain Current
Tc = 100ºC
ID
Pulsed Drain Current *
IDM
12
A
Single Pulse Avalanche Energy (Note 2)
EAS
283
mJ
Avalanche Current (Repetitive) (Note 1)
IAR
3
A
Repetitive Avalanche Energy (Note 1)
EAR
9.4
mJ
dv/dt
4.5
V/ns
Peak Diode Recovery dv/dt (Note 3)
o
Total Power Dissipation @ TC = 25 C
Operating Junction Temperature
Storage Temperature Range
Note: Limited by maximum junction temperature
PTOT
TJ
TSTG
1/12
94
32
150
-55 to +150
94
W
ºC
o
C
Version: B12
TSM3N80
800V N-Channel Power MOSFET
Thermal Performance
Symbol
IPAK/DPAK
ITO-220
TO-220
Thermal Resistance - Junction to Case
RӨJC
1.33
3.9
1.33
Thermal Resistance - Junction to Ambient
RӨJA
110
Parameter
Unit
o
C/W
62.5
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250uA
BVDSS
800
--
--
V
Drain-Source On-State Resistance
VGS = 10V, ID = 1.5A
RDS(ON)
--
3.3
4.2
Ω
Gate Threshold Voltage
VDS = VGS, ID = 250uA
VGS(TH)
2
--
4
V
Zero Gate Voltage Drain Current
VDS = 800V, VGS = 0V
IDSS
--
--
10
uA
Gate Body Leakage
VGS = ±30V, VDS = 0V
IGSS
--
--
±100
nA
Forward Transfer Conductance
VDS = 30V, ID = 1.5A
gfs
--
3.7
--
S
Total Gate Charge
VDS = 640V, ID = 3A,
Qg
--
19
--
Gate-Source Charge
VGS = 10V
Qgs
--
4
--
Gate-Drain Charge
(Note 4,5)
Qgd
--
7.6
--
Ciss
--
696
--
Coss
--
65
--
Crss
--
10.2
--
td(on)
--
48
--
tr
--
36
--
td(off)
--
106
--
tf
--
41
--
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
nC
pF
Switching
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VGS = 10V, ID = 3A,
VDD = 400V, RG =25Ω
(Note 4,5)
nS
Source-Drain Diode Ratings and Characteristic
Source Current
Integral reverse diode in
IS
--
--
3
A
Source Current (Pulse)
the MOSFET
ISM
--
--
12
A
Diode Forward Voltage
IS = 3A, VGS = 0V
VSD
--
--
1.5
V
Reverse Recovery Time
VGS = 0V, IS =3A,
tfr
--
370
--
nS
dIF/dt = 100A/us
Reverse Recovery Charge
Qfr
-Note 1: Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
Note 2: VDD = 50V, IAS=3A, L=59mH, RG =25Ω, Starting TJ=25ºC
Note 3: ISD≤4A, di/dt≤200A/uS, VDD≤BVDSS, Starting TJ=25ºC
Note 4: Pulse test: pulse width ≤300uS, duty cycle ≤2%
Note 5: Essentially Independent of Operating Temperature
1.8
--
uC
2/12
Version: B12
TSM3N80
800V N-Channel Power MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveform
EAS Test Circuit & Waveform
3/12
Version: B12
TSM3N80
800V N-Channel Power MOSFET
Diode Reverse Recovery Time Test Circuit & Waveform
4/12
Version: B12
TSM3N80
800V N-Channel Power MOSFET
Electrical Characteristics Curve (Tc = 25oC, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
5/12
Version: B12
TSM3N80
800V N-Channel Power MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Drain Current vs. Case Temperature
BVDSS vs. Junction Temperature
Maximum Safe Operating Area
Capacitance vs. Drain-Source Voltage
Maximum Safe Operating Area (ITO-220)
6/12
Version: B12
TSM3N80
800V N-Channel Power MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Ambient (ITO-220)
7/12
Version: B12
TSM3N80
800V N-Channel Power MOSFET
TO-220 Mechanical Drawing
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
8/12
TO-220 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
10.00
10.50
0.394
0.413
3.74
3.91
0.147
0.154
2.44
2.94
0.096
0.116
-6.35
-0.250
0.38
1.10
0.015
0.043
2.34
2.71
0.092
0.107
4.69
5.43
0.185
0.214
12.70
14.73
0.500
0.580
8.38
9.38
0.330
0.369
14.22
16.51
0.560
0.650
3.55
4.82
0.140
0.190
1.16
1.40
0.046
0.055
27.70
29.62
1.091
1.166
2.03
2.92
0.080
0.115
0.25
0.61
0.010
0.024
Version: B12
TSM3N80
800V N-Channel Power MOSFET
ITO-220 Mechanical Drawing
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
9/12
ITO-220 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
10.04
10.07
0.395
0.396
6.20 (typ.)
0.244 (typ.)
2.20 (typ.)
0.087 (typ.)
∮1.40 (typ.)
∮0.055 (typ.)
15.0
15.20
0.591
0.598
0.52
0.54
0.020
0.021
2.35
2.73
0.093
0.107
13.50
13.55
0.531
0.533
1.11
1.49
0.044
0.058
2.60
2.80
0.102
0.110
4.49
4.50
0.176
0.177
1.15 (typ.)
0.045 (typ.)
3.03
3.05
0.119
0.120
2.60
2.80
0.102
0.110
6.55
6.65
0.258
0.262
Version: B12
TSM3N80
800V N-Channel Power MOSFET
TO-251 Mechanical Drawing
10/12
Version: B12
TSM3N80
800V N-Channel Power MOSFET
TO-252 Mechanical Drawing
Unit: Millimeters
11/12
Version: B12
TSM3N80
800V N-Channel Power MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
12/12
Version: B12