TSC TSM4N80CIC0

TSM4N80
800V N-Channel Power MOSFET
TO-220
ITO-220
PRODUCT SUMMARY
VDS (V)
RDS(on)(Ω)
Pin Definition:
1. Gate
2. Drain
3. Source
800
ID (A)
3 @ VGS =10V
4
General Description
The TSM4N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior
switching performance, and withstand high energy pulse in the avalanche and commutation mode. These
devices are well suited for high efficiency switch mode power supply, electronic lamp ballast based on half
bridge.
Block Diagram
Features
●
●
Low RDS(ON) 3Ω (Max.)
Low gate charge typical @ 25nC (Typ.)
●
Improve dv/dt capability
Ordering Information
Part No.
Package
Packing
TSM4N80CZ C0
TO-220
50pcs / Tube
TSM4N80CI C0
ITO-220
50pcs / Tube
N-Channel MOSFET
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Tc = 25 C
o
Tc = 100 C
Pulsed Drain Current *
Unit
800
V
VGS
±30
V
ID
IDM
Peak Diode Recovery dv/dt (Note 3)
ITO-220
VDS
o
Continuous Drain Current
TO-220
4
4*
2.5
2.5 *
16
16 *
A
A
dv/dt
4.5
V
Single Pulse Avalanche Energy (Note 2)
EAS
85
mJ
Avalanche Current (Repetitive) (Note 1)
IAR
4
A
Repetitive Avalanche Energy (Note 1)
EAR
12.3
mJ
o
Power Dissipation
Tc = 25 C
Derate above 25℃
Operating Junction Temperature
Storage Temperature Range
* Limited by maximum junction temperature
PD
123
38.7
W
0.98
0.3
ºC/W
TJ
150
TSTG
-55 to +150
1/10
ºC
o
C
Version: C13
TSM4N80
800V N-Channel Power MOSFET
Thermal Performance
Parameter
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
Notes: Surface mounted on FR4 board t ≤ 10sec
Symbol
TO-220
ITO-220
RӨJC
1.01
3.23
Unit
o
C/W
RӨJA
62.5
Electrical Specifications (Tc = 25oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250uA
BVDSS
800
--
--
V
Drain-Source On-State Resistance
VGS = 10V, ID = 2.0A
RDS(ON)
--
2.5
3.0
Ω
Gate Threshold Voltage
VDS = VGS, ID = 250uA
VGS(TH)
2.0
--
4.0
V
Zero Gate Voltage Drain Current
VDS = 800V, VGS = 0V
IDSS
--
--
10
uA
Gate Body Leakage
VGS = ±30V, VDS = 0V
IGSS
--
--
±100
nA
Forward Transconductance
VDS = 30V, ID = 2.0A
gfs
--
7.1
--
S
Diode Forward Voltage
IS = 4A, VGS = 0V
VSD
--
--
1.5
V
Qg
--
20
--
Qgs
--
3.7
--
Qgd
--
8.2
--
Ciss
--
955
--
Coss
--
80
--
Crss
--
13
--
td(on)
--
49
--
tr
--
38
--
td(off)
--
146
--
tf
--
50
--
tfr
--
487
--
nS
--
2.8
--
uC
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
VDS = 640V, ID = 4A,
VGS = 10V
VDS = 25V, VGS = 0V,
f = 1.0MHz
nC
pF
c
Turn-On Delay Time
Turn-On Rise Time
VGS = 10V, ID = 4A,
Turn-Off Delay Time
VDD = 400V, RG = 25Ω
Turn-Off Fall Time
Reverse Recovery Time
VGS = 0V, IS = 4A,
dIF/dt = 100A/us
Reverse Recovery Charge
Qfr
Notes:
1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
2. VDD = 50V, IAS=4A, L=10mH, RG=25Ω, Starting TJ=25℃
3. ISD ≤8A, di/dt ≤ 200A/uS, Vdd ≤ BV, Starting TJ=25℃
4. Pulse test: pulse width ≤300uS, duty cycle ≤2%
5. b For design reference only, not subject to production testing.
6. c Switching time is essentially independent of operating temperature.
2/10
nS
Version: C13
TSM4N80
800V N-Channel Power MOSFET
Electrical Characteristics Curve (Tc = 25oC, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
3/10
Version: C13
TSM4N80
800V N-Channel Power MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Drain Current vs. Case Temperature
BVDSS vs. Junction Temperature
Maximum Safe Operating Area (TO-220)
Capacitance vs. Drain-Source Voltage
Maximum Safe Operating Area (ITO-220)
4/10
Version: C13
TSM4N80
800V N-Channel Power MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Ambient(ITO-220)
5/10
Version: C13
TSM4N80
800V N-Channel Power MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveform
EAS Test Circuit & Waveform
6/10
Version: C13
TSM4N80
800V N-Channel Power MOSFET
Diode Reverse Recovery Time Test Circuit & Waveform
7/10
Version: C13
TSM4N80
800V N-Channel Power MOSFET
TO-220 Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y = Year Code
M = Month Code
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug,
I=Sep, J=Oct, K=Nov, L=Dec)
L = Lot Code
8/10
Version: C13
TSM4N80
800V N-Channel Power MOSFET
ITO-220 Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y = Year Code
M = Month Code
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug,
I=Sep, J=Oct, K=Nov, L=Dec)
L = Lot Code
9/10
Version: C13
TSM4N80
800V N-Channel Power MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
10/10
Version: C13