TSM4N80 800V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY VDS (V) RDS(on)(Ω) Pin Definition: 1. Gate 2. Drain 3. Source 800 ID (A) 3 @ VGS =10V 4 General Description The TSM4N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, electronic lamp ballast based on half bridge. Block Diagram Features ● ● Low RDS(ON) 3Ω (Max.) Low gate charge typical @ 25nC (Typ.) ● Improve dv/dt capability Ordering Information Part No. Package Packing TSM4N80CZ C0 TO-220 50pcs / Tube TSM4N80CI C0 ITO-220 50pcs / Tube N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Tc = 25 C o Tc = 100 C Pulsed Drain Current * Unit 800 V VGS ±30 V ID IDM Peak Diode Recovery dv/dt (Note 3) ITO-220 VDS o Continuous Drain Current TO-220 4 4* 2.5 2.5 * 16 16 * A A dv/dt 4.5 V Single Pulse Avalanche Energy (Note 2) EAS 85 mJ Avalanche Current (Repetitive) (Note 1) IAR 4 A Repetitive Avalanche Energy (Note 1) EAR 12.3 mJ o Power Dissipation Tc = 25 C Derate above 25℃ Operating Junction Temperature Storage Temperature Range * Limited by maximum junction temperature PD 123 38.7 W 0.98 0.3 ºC/W TJ 150 TSTG -55 to +150 1/10 ºC o C Version: C13 TSM4N80 800V N-Channel Power MOSFET Thermal Performance Parameter Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient Notes: Surface mounted on FR4 board t ≤ 10sec Symbol TO-220 ITO-220 RӨJC 1.01 3.23 Unit o C/W RӨJA 62.5 Electrical Specifications (Tc = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA BVDSS 800 -- -- V Drain-Source On-State Resistance VGS = 10V, ID = 2.0A RDS(ON) -- 2.5 3.0 Ω Gate Threshold Voltage VDS = VGS, ID = 250uA VGS(TH) 2.0 -- 4.0 V Zero Gate Voltage Drain Current VDS = 800V, VGS = 0V IDSS -- -- 10 uA Gate Body Leakage VGS = ±30V, VDS = 0V IGSS -- -- ±100 nA Forward Transconductance VDS = 30V, ID = 2.0A gfs -- 7.1 -- S Diode Forward Voltage IS = 4A, VGS = 0V VSD -- -- 1.5 V Qg -- 20 -- Qgs -- 3.7 -- Qgd -- 8.2 -- Ciss -- 955 -- Coss -- 80 -- Crss -- 13 -- td(on) -- 49 -- tr -- 38 -- td(off) -- 146 -- tf -- 50 -- tfr -- 487 -- nS -- 2.8 -- uC Dynamic b Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching VDS = 640V, ID = 4A, VGS = 10V VDS = 25V, VGS = 0V, f = 1.0MHz nC pF c Turn-On Delay Time Turn-On Rise Time VGS = 10V, ID = 4A, Turn-Off Delay Time VDD = 400V, RG = 25Ω Turn-Off Fall Time Reverse Recovery Time VGS = 0V, IS = 4A, dIF/dt = 100A/us Reverse Recovery Charge Qfr Notes: 1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. VDD = 50V, IAS=4A, L=10mH, RG=25Ω, Starting TJ=25℃ 3. ISD ≤8A, di/dt ≤ 200A/uS, Vdd ≤ BV, Starting TJ=25℃ 4. Pulse test: pulse width ≤300uS, duty cycle ≤2% 5. b For design reference only, not subject to production testing. 6. c Switching time is essentially independent of operating temperature. 2/10 nS Version: C13 TSM4N80 800V N-Channel Power MOSFET Electrical Characteristics Curve (Tc = 25oC, unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 3/10 Version: C13 TSM4N80 800V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Drain Current vs. Case Temperature BVDSS vs. Junction Temperature Maximum Safe Operating Area (TO-220) Capacitance vs. Drain-Source Voltage Maximum Safe Operating Area (ITO-220) 4/10 Version: C13 TSM4N80 800V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Thermal Transient Impedance, Junction-to-Ambient(ITO-220) 5/10 Version: C13 TSM4N80 800V N-Channel Power MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform EAS Test Circuit & Waveform 6/10 Version: C13 TSM4N80 800V N-Channel Power MOSFET Diode Reverse Recovery Time Test Circuit & Waveform 7/10 Version: C13 TSM4N80 800V N-Channel Power MOSFET TO-220 Mechanical Drawing Unit: Millimeters Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code 8/10 Version: C13 TSM4N80 800V N-Channel Power MOSFET ITO-220 Mechanical Drawing Unit: Millimeters Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code 9/10 Version: C13 TSM4N80 800V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 10/10 Version: C13