TSM8N80 800V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) 800 ID (A) 1.4 @ VGS =10V 8 General Description The TSM8N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, electronic lamp ballast based on half bridge. Block Diagram Features ● Low RDS(ON) 1.4Ω (Max.) ● Low gate charge typical @ 41nC (Typ.) ● Improve dv/dt capability Ordering Information Part No. Package Packing TSM8N80CZ C0 TO-220 50pcs / Tube TSM8N80CZ C0G TO-220 50pcs / Tube N-Channel MOSFET TSM8N80CI C0G ITO-220 50pcs / Tube Note: “G” denote for Halogen Free Product Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Tc = 25 C o Tc = 100 C Pulsed Drain Current * Unit 800 V VGS ±30 V ID IDM Peak Diode Recovery dv/dt (Note 4) ITO-220 VDS o Continuous Drain Current TO-220 8 8* 4.9 4.9 * 32 32 * A A dv/dt 4.5 V Single Pulse Avalanche Energy (Note 2) EAS 171 mJ Avalanche Current (Repetitive) (Note 1) IAR 8 A Repetitive Avalanche Energy (Note 1) EAR 25 mJ o Power Dissipation Tc = 25 C Derate above 25℃ Operating Junction Temperature Storage Temperature Range * Limited by maximum junction temperature PD 250 40.3 W 2 0.32 ºC/W TJ 150 TSTG -55 to +150 1/10 ºC o C Version: C13 TSM8N80 800V N-Channel Power MOSFET Thermal Performance Parameter Symbol TO-220 ITO-220 Thermal Resistance - Junction to Case RӨJC 0.5 3.1 Thermal Resistance - Junction to Ambient RӨJA Unit o 62.5 C/W Notes: Surface mounted on FR4 board t ≤ 10sec Electrical Specifications (Tc = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA BVDSS 800 -- -- V Drain-Source On-State Resistance VGS = 10V, ID = 4.0A RDS(ON) -- 1.1 1.4 Ω Gate Threshold Voltage VDS = VGS, ID = 250uA VGS(TH) 2.0 -- 4.0 V Zero Gate Voltage Drain Current VDS = 800V, VGS = 0V IDSS -- -- 10 uA Gate Body Leakage VGS = ±30V, VDS = 0V IGSS -- -- ±100 nA Forward Transconductance VDS = 30V, ID = 4.0A gfs -- 7 -- S Diode Forward Voltage IS = 8A, VGS = 0V VSD -- -- 1.5 V Qg -- 41 -- Qgs -- 10 -- Qgd -- 11 -- Ciss -- 1921 -- Coss -- 146 -- Crss -- 12 -- td(on) -- 133 -- tr -- 30 -- td(off) -- 172 -- tf -- 37 -- tfr -- 479 -- nS -- uC Dynamic b Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching VDS = 640V, ID = 8A, VGS = 10V VDS = 25V, VGS = 0V, f = 1.0MHz nC pF c Turn-On Delay Time Turn-On Rise Time VGS = 10V, ID = 8A, Turn-Off Delay Time VDD = 400V, RG = 25Ω Turn-Off Fall Time Reverse Recovery Time VGS = 0V, IS = 8A, dIF/dt = 100A/us Reverse Recovery Charge Qfr -5.5 Notes: 1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. Max Rating EAS Test Condition: VDD = 50V, IAS=8A, L=5mH, RG=25Ω, Starting TJ=25℃ 3. Guaranteed 100% EAS Test Condition: VDD = 50V, IAS=8A, L=1mH, RG=25Ω, Starting TJ=25℃ 4. ISD ≤8A, di/dt ≤ 200A/uS, Vdd ≤ BV, Starting TJ=25℃ 5. Pulse test: pulse width ≤300uS, duty cycle ≤2% 6. b For design reference only, not subject to production testing. 7. c Switching time is essentially independent of operating temperature. 2/10 nS Version: C13 TSM8N80 800V N-Channel Power MOSFET Electrical Characteristics Curve (Tc = 25oC, unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 3/10 Version: C13 TSM8N80 800V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Drain Current vs. Case Temperature BVDSS vs. Junction Temperature Maximum Safe Operating Area Capacitance vs. Drain-Source Voltage Maximum Safe Operating Area (ITO-220) 4/10 Version: C13 TSM8N80 800V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Thermal Transient Impedance, Junction-to-Ambient (ITO-220) 5/10 Version: C13 TSM8N80 800V N-Channel Power MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform EAS Test Circuit & Waveform 6/10 Version: C13 TSM8N80 800V N-Channel Power MOSFET Diode Reverse Recovery Time Test Circuit & Waveform 7/10 Version: C13 TSM8N80 800V N-Channel Power MOSFET TO-220 Mechanical Drawing Unit: Millimeters Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 8/10 Version: C13 TSM8N80 800V N-Channel Power MOSFET ITO-220 Mechanical Drawing Unit: Millimeters Marking Diagram Y G WW F = Year Code = Halogen Free = Week Code by Calendar Year = Factory Code 9/10 Version: C13 TSM8N80 800V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. 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