TSM22P10 -100V P-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS -100 V RDS(on) (max) VGS = -10V 140 VGS = -4.5V 170 mΩ Qg Application 42 nC Block Diagram l Networking l Load Switch l LED applications Ordering Information Part No. Package Packing TSM22P10CZ C0G TO-220 50pcs / Tube TSM22P10CI C0G ITO-220 50pcs / Tube P-Channel MOSFET Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds Absolute Maximum Ratings (Tc = 25°C unless otherwise noted) Parameter Symbol Limit TO-220 ITO-220 Unit Drain-Source Voltage VDS -100 V Gate-Source Voltage VGS ±25 V -22 A -14 -88 A Continuous Drain Current Pulsed Drain Current (Note 1) Tc = 25°C Tc = 100°C (Note 2) ID IDM A Power Dissipation @ TC = 25°C PD Operating Junction Temperature TJ 150 °C TSTG -55 to +150 °C Storage Temperature Range 125 48 W Thermal Performance Parameter Symbol Thermal Resistance - Junction to Case RӨJC Thermal Resistance - Junction to Ambient RӨJA 1/7 Limit TO-220 ITO-220 1.0 2.6 62 Unit °C/W Version: A14 TSM22P10 -100V P-Channel Power MOSFET Electrical Specifications (TC = 25°C unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit BVDSS -100 -- -- V -- 115 140 -- 130 170 -1 -- -3 -- -- -1 -- -- -10 IGSS -- -- ±100 Qg -- 42 -- Qgs -- 8 -- Qgd -- 5.6 -- Ciss -- 2250 -- Coss -- 130 -- Crss -- 90 -- td(on) -- -- -- tr -- -- -- td(off) -- -- -- tf -- -- -- IS -- -- -22 A ISM -- -- -88 A VSD -- -- -1.1 V Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage VGS = 0V, ID = -250µA VGS = -10V, ID = -20A VGS = -4.5V, ID = -10A VDS = VGS, ID = -250µA VDS = -100V, VGS = 0V VDS = -80V, TJ = 125°C VGS = ±25V, VDS = 0V RDS(ON) VGS(TH) IDSS mΩ V µA nA Dynamic Total Gate Charge (Note 3,4) Gate-Source Charge Gate-Drain Charge (Note 3,4) (Note 3,4) VDS = -50V, ID = -20A, VGS = -10V Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = -30V, VGS = 0V, f = 1.0MHz nC pF Switching Turn-On Delay Time (Note 3,4) Turn-On Rise Time (Note 3,4) Turn-Off Delay Time (Note 3,4) VDD = -30V, ID = -1A, VGS = -10V, RG =6Ω Turn-Off Fall Time (Note 3,4) ns Source-Drain Diode Ratings and Characteristic Maximum Continuous Drain-Source Diode Forward Current Integral reverse diode in Maximum Pulse Drain-Source Diode Forward Current the MOSFET Diode-Source Forward Voltage VGS = 0V, IS = -1A Note: 1. Limited by maximum junction temperature 2. Pulse width limited by safe operating area 3. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2% 4. Switching time is essentially independent of operating temperature. 2/7 Version: A14 TSM22P10 -100V P-Channel Power MOSFET Electrical Characteristics Curve Normalized RDS(on) vs. TJ Normalized On Resistance (mW) -ID, Continuous Drain Current (A) Continuous Drain Current vs. TC TC, Case Temperature (°C) TJ, Junction Temperature (°C) -VGS, Gate to Source Voltage (V) Gate Charge Waveform Qg, Gate Charge (nC) Maximum Safe Operating Area (TO-220) Maximum Safe Operating Area (ITO-220) -ID, Continuous Drain Current (A) TJ, Junction Temperature (°C) -ID, Continuous Drain Current (A) Normalized Gate Threshold Voltage (V) Threshold Voltage vs. Junction Temperature -VDS, Drain to Source Voltage (V) -VDS, Drain to Source Voltage (V) 3/7 Version: A14 TSM22P10 -100V P-Channel Power MOSFET Electrical Characteristics Curve Normalized Thermal Response (RθJC) Normalized Thermal Transient Impedance (ITO-220) Normalized Thermal Response (RθJC) Normalized Thermal Transient Impedance (TO-220) Square Wave Pulse Duration (s) Square Wave Pulse Duration (s) 4/7 Version: A14 TSM22P10 -100V P-Channel Power MOSFET TO-220 Mechanical Drawing Unit: Millimeters Marking Diagram G Y WW F = Halogen Free Product = Year Code = Week Code (01~52) = Factory Code 5/7 Version: A14 TSM22P10 -100V P-Channel Power MOSFET ITO-220 Mechanical Drawing Unit: Millimeters Marking Diagram G Y WW F = Halogen Free Product = Year Code = Week Code (01~52) = Factory Code 6/7 Version: A14 TSM22P10 -100V P-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 7/7 Version: A14