TSM1N45 450V N-Channel Power MOSFET TO-92 SOT-223 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 450 4.25 @ VGS =10V 0.25 General Description The TSM1N45 is N-Channel enhancement mode power field effect transistors are produced using planar DMOS technology process. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand higher energy pulse in the avalanche and commutation mode. There devices are well suited for electronic ballasts base and half bridge configuration. Features ● ● ● ● ● Block Diagram Low gate charge @ typical 6.5nC Low Crss @ typical 6.5pF Avalanche energy specified Improved dv/dt capability Gate-Source Voltage ±30V guaranteed Ordering Information Part No. TSM1N45CT B0 TSM1N45CT A3 TSM1N45CW RP Package Packing TO-92 TO-92 SOT-223 1Kpcs / Bulk 2Kpcs / Ammo 2.5Kpcs / 13” Reel N-Channel MOSFET Absolute Maximum Rating (Ta=25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) Single Pulse Drain to Source Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) TO-92 Total Power Dissipation @TC =25ºC SOT-223 Operating Junction and Storage Temperature Range *Surface Mounted on 1”x1” FR4 board Symbol Limit Unit VDS VGS ID IDM EAS IAR EAR dv/dt V V A A mJ A mJ V/ns TJ, TSTG 450 ±30 0.5 4 108 0.5 0.25 5.5 2 15 -55 to +150 Symbol Limit Unit PDTOT W o C Thermal Performance Parameter Thermal Resistance - Junction to Lead Thermal Resistance - Junction to Case TO-92 RӨJL SOT-223 RӨJC TO-92 Thermal Resistance - Junction to Ambient * RӨJA SOT-223 *When mounted on the minimum pad size recommended (PCB mount) 1/9 50 8.5 140 60 o C/W o C/W Version: C09 TSM1N45 450V N-Channel Power MOSFET Electrical Specifications (Ta=25oC, unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage Conditions VGS = 0V, ID = 250uA VGS = 10V, ID = 0.25A VDS = VGS, ID = 250uA VDS = VGS, ID = 250mA VDS = 450V, VGS = 0V VGS = ±30V, VDS = 0V VDS = 50V, ID = 0.25A Symbol Min Typ Max Unit BVDSS RDS(ON) 450 -2.3 3.2 ---- -3.7 3.0 4.0 --0.7 -4.25 3.7 4.8 10 ±100 -- V Ω VGS(TH) V Zero Gate Voltage Drain Current IDSS uA Gate Body Leakage IGSS nA Forward Transconductance gfs S Dynamic Total Gate Charge -6.5 10 Qg VDS = 360V, ID = 0.5A, nC Gate-Source Charge VGS = 10V Qgs -1.3 -(Note 4,5) Gate-Drain Charge Qgd -3.2 -Ciss Input Capacitance -235 -VDS = 25V, VGS = 0V, pF Output Capacitance Coss -29 -f = 1.0MHz Reverse Transfer Capacitance Crss -6.5 -Switching Turn-On Delay Time td(on) -14.7 -VGS = 25V, ID = 0.5A, Turn-On Rise Time tr -32.8 -VDS = 225V, RG = 25Ω nS Turn-Off Delay Time td(off) -25.2 -(Note 4,5) Turn-Off Fall Time tf -23.7 -Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current IS --0.5 A Maximum Pulsed Drain-Source Diode Forward Current ISM --4.0 A Drain-Source Diode Forward Voltage VGS = 0V, IS = 0.5A VSD --1.4 V V = 0V, I = 1A GS S Reverse Recovery Time trr -110 -nS dIF/dt = 100A/µS Reverse Recovery Charge Qrr -0.35 -µC (Note 4) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L=75mH, IAS=1.6A, VDD=50V, RG=25Ω, Starting TJ=25ºC 3. ISD ≤ 0.5A, di/dt ≤ 300A/µS, VDD ≤ BVDSS, Starting TJ=25ºC 4. Pulse test: pulse width ≤ 300uS. 5. Essentially independent of operating temperature 6. a) Reference point of the is the drain RӨJL lead b) When mounted on 3”x4.5” FR-4 PCB without any pad copper in a still air environment (RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistance. RӨCA is determined by the user’s board design) 2/9 Version: C09 TSM1N45 450V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 3/9 Version: C09 TSM1N45 450V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) On-Resistance vs. Gate-Source Voltage Threshold Voltage Maximum Safe Operating Area Normalized Thermal Transient Impedance, Junction-to-Ambient 4/9 Version: C09 TSM1N45 450V N-Channel Power MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform EAS Test Circuit & Waveform 5/9 Version: C09 TSM1N45 450V N-Channel Power MOSFET Diode Reverse Recovery Time Test Circuit & Waveform 6/9 Version: C09 TSM1N45 450V N-Channel Power MOSFET TO-92 Mechanical Drawing DIM A B C D E F G H TO-92 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 4.30 4.70 0.169 0.185 4.30 4.70 0.169 0.185 13.53 (typ) 0.532 (typ) 0.39 0.49 0.015 0.019 1.18 1.28 0.046 0.050 3.30 3.70 0.130 0.146 1.27 1.31 0.050 0.051 0.33 0.43 0.013 0.017 Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code 7/9 Version: C09 TSM1N45 450V N-Channel Power MOSFET SOT-223 Mechanical Drawing DIM A B C D E F G H I J K SOT-223 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 6.350 6.850 0.250 0.270 2.900 3.100 0.114 0.122 3.450 3.750 0.136 0.148 0.595 0.635 0.023 0.025 4.550 4.650 0.179 0.183 2.250 2.350 0.088 0.093 0.835 1.035 0.032 0.041 6.700 7.300 0.263 0.287 0.250 0.355 0.010 0.014 10° 16° 10° 16° 1.550 1.800 0.061 0.071 Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code 8/9 Version: C09 TSM1N45 450V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. 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