TSC TSM1N45CWRP

TSM1N45
450V N-Channel Power MOSFET
TO-92
SOT-223
Pin Definition:
1. Gate
2. Drain
3. Source
PRODUCT SUMMARY
VDS (V)
RDS(on)(Ω)
ID (A)
450
4.25 @ VGS =10V
0.25
General Description
The TSM1N45 is N-Channel enhancement mode power field effect transistors are produced using planar DMOS
technology process. This advanced technology has been especially tailored to minimize on-state resistance,
provide superior switching performance, and withstand higher energy pulse in the avalanche and commutation
mode. There devices are well suited for electronic ballasts base and half bridge configuration.
Features
●
●
●
●
●
Block Diagram
Low gate charge @ typical 6.5nC
Low Crss @ typical 6.5pF
Avalanche energy specified
Improved dv/dt capability
Gate-Source Voltage ±30V guaranteed
Ordering Information
Part No.
TSM1N45CT B0
TSM1N45CT A3
TSM1N45CW RP
Package
Packing
TO-92
TO-92
SOT-223
1Kpcs / Bulk
2Kpcs / Ammo
2.5Kpcs / 13” Reel
N-Channel MOSFET
Absolute Maximum Rating (Ta=25oC unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
Single Pulse Drain to Source Avalanche Energy (Note 2)
Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt (Note 3)
TO-92
Total Power Dissipation @TC =25ºC
SOT-223
Operating Junction and Storage Temperature Range
*Surface Mounted on 1”x1” FR4 board
Symbol
Limit
Unit
VDS
VGS
ID
IDM
EAS
IAR
EAR
dv/dt
V
V
A
A
mJ
A
mJ
V/ns
TJ, TSTG
450
±30
0.5
4
108
0.5
0.25
5.5
2
15
-55 to +150
Symbol
Limit
Unit
PDTOT
W
o
C
Thermal Performance
Parameter
Thermal Resistance - Junction to Lead
Thermal Resistance - Junction to Case
TO-92
RӨJL
SOT-223
RӨJC
TO-92
Thermal Resistance - Junction to Ambient *
RӨJA
SOT-223
*When mounted on the minimum pad size recommended (PCB mount)
1/9
50
8.5
140
60
o
C/W
o
C/W
Version: C09
TSM1N45
450V N-Channel Power MOSFET
Electrical Specifications (Ta=25oC, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Gate Threshold Voltage
Conditions
VGS = 0V, ID = 250uA
VGS = 10V, ID = 0.25A
VDS = VGS, ID = 250uA
VDS = VGS, ID = 250mA
VDS = 450V, VGS = 0V
VGS = ±30V, VDS = 0V
VDS = 50V, ID = 0.25A
Symbol
Min
Typ
Max
Unit
BVDSS
RDS(ON)
450
-2.3
3.2
----
-3.7
3.0
4.0
--0.7
-4.25
3.7
4.8
10
±100
--
V
Ω
VGS(TH)
V
Zero Gate Voltage Drain Current
IDSS
uA
Gate Body Leakage
IGSS
nA
Forward Transconductance
gfs
S
Dynamic
Total Gate Charge
-6.5
10
Qg
VDS = 360V, ID = 0.5A,
nC
Gate-Source Charge
VGS = 10V
Qgs
-1.3
-(Note 4,5)
Gate-Drain Charge
Qgd
-3.2
-Ciss
Input Capacitance
-235
-VDS = 25V, VGS = 0V,
pF
Output Capacitance
Coss
-29
-f = 1.0MHz
Reverse Transfer Capacitance
Crss
-6.5
-Switching
Turn-On Delay Time
td(on)
-14.7
-VGS = 25V, ID = 0.5A,
Turn-On Rise Time
tr
-32.8
-VDS = 225V, RG = 25Ω
nS
Turn-Off Delay Time
td(off)
-25.2
-(Note 4,5)
Turn-Off Fall Time
tf
-23.7
-Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current
IS
--0.5
A
Maximum Pulsed Drain-Source Diode Forward Current
ISM
--4.0
A
Drain-Source Diode Forward Voltage VGS = 0V, IS = 0.5A
VSD
--1.4
V
V
=
0V,
I
=
1A
GS
S
Reverse Recovery Time
trr
-110
-nS
dIF/dt = 100A/µS
Reverse Recovery Charge
Qrr
-0.35
-µC
(Note 4)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L=75mH, IAS=1.6A, VDD=50V, RG=25Ω, Starting TJ=25ºC
3. ISD ≤ 0.5A, di/dt ≤ 300A/µS, VDD ≤ BVDSS, Starting TJ=25ºC
4. Pulse test: pulse width ≤ 300uS.
5. Essentially independent of operating temperature
6. a) Reference point of the is the drain RӨJL lead
b) When mounted on 3”x4.5” FR-4 PCB without any pad copper in a still air environment
(RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistance. RӨCA is determined by the
user’s board design)
2/9
Version: C09
TSM1N45
450V N-Channel Power MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
3/9
Version: C09
TSM1N45
450V N-Channel Power MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
On-Resistance vs. Gate-Source Voltage
Threshold Voltage
Maximum Safe Operating Area
Normalized Thermal Transient Impedance, Junction-to-Ambient
4/9
Version: C09
TSM1N45
450V N-Channel Power MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveform
EAS Test Circuit & Waveform
5/9
Version: C09
TSM1N45
450V N-Channel Power MOSFET
Diode Reverse Recovery Time Test Circuit & Waveform
6/9
Version: C09
TSM1N45
450V N-Channel Power MOSFET
TO-92 Mechanical Drawing
DIM
A
B
C
D
E
F
G
H
TO-92 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
4.30
4.70
0.169
0.185
4.30
4.70
0.169
0.185
13.53 (typ)
0.532 (typ)
0.39
0.49
0.015
0.019
1.18
1.28
0.046
0.050
3.30
3.70
0.130
0.146
1.27
1.31
0.050
0.051
0.33
0.43
0.013
0.017
Marking Diagram
Y = Year Code
M = Month Code
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep,
J=Oct, K=Nov, L=Dec)
L = Lot Code
7/9
Version: C09
TSM1N45
450V N-Channel Power MOSFET
SOT-223 Mechanical Drawing
DIM
A
B
C
D
E
F
G
H
I
J
K
SOT-223 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
6.350
6.850
0.250
0.270
2.900
3.100
0.114
0.122
3.450
3.750
0.136
0.148
0.595
0.635
0.023
0.025
4.550
4.650
0.179
0.183
2.250
2.350
0.088
0.093
0.835
1.035
0.032
0.041
6.700
7.300
0.263
0.287
0.250
0.355
0.010
0.014
10°
16°
10°
16°
1.550
1.800
0.061
0.071
Marking Diagram
Y = Year Code
M = Month Code
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep,
J=Oct, K=Nov, L=Dec)
L = Lot Code
8/9
Version: C09
TSM1N45
450V N-Channel Power MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
9/9
Version: C09