TSM4806

TSM4806
20V N-Channel MOSFET
SOP-8
Key Parameter Performance
Pin Definition:
1. Source
8. Drain
2. Source
7. Drain
3. Source
6. Drain
4. Gate
5. Drain
Parameter
Value
Unit
VDS
20
V
RDS(on) (max)
VGS = 4.5V
20
VGS = 2.5V
25
VGS = 1.8V
31
Qg
mΩ
12.3
nC
Block Diagram
Features
●
Advanced High Cell Density Trench Technology.
●
Low Gate Charge.
Application
●
●
Networking DC-DC Power System.
Load Switch.
Ordering Information
Part No.
Package
Packing
TSM4806CS RLG
SOP-8
2.5kpcs / 13” Reel
Note: “G” denotes Halogen Free Product.
N-Channel MOSFET
Absolute Maximum Ratings (TA=25oC, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
±8
V
ID
28
A
IDM
70
A
IS
28
A
PD
2
Continuous Drain Current
Pulsed Drain Current
a
b
Continuous Source Current (Diode Conduction)
Total Power Dissipation
a,c
o
TA=25 C
Storage Temperature Range
-55 to +150
TJ
-55 to +150
o
Symbol
Limit
TSTG
Operating Junction Temperature Range
W
o
C
C
Thermal Performance
Parameter
Unit
Thermal Resistance Junction to Lead
RӨJL
40
o
Thermal Resistance Junction to Ambient
RӨJA
62.5
o
C/W
C/W
Notes:
2
a. The data tested by surface mounted on a 1 inch FR-4 board with 2oz copper.
b. The data tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2% surface mounted on FR4 Board, t ≤ 5s.
c. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
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Version: A14
TSM4806
20V N-Channel MOSFET
Electrical Specifications
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
VGS = 0V, ID = 250µA
BVDSS
20
--
--
V
Gate Threshold Voltage
VDS = VGS, ID = 250µA
VGS(TH)
0.3
0.6
1.0
V
Gate-Source Leakage Current
VGS = ±8V, VDS = 0V
IGSS
--
--
±100
nA
Drain-Source Leakage Current
VDS = 16V, VGS = 0V
IDSS
--
--
1
µA
--
16
20
--
20
25
25
31
Static
Drain-Source Breakdown Voltage
VGS = 4.5V, ID = 20A
Drain-Source On-State Resistance
VGS = 2.5V, ID = 15A
RDS(ON)
VGS = 1.8V, ID = 10A
mΩ
Forward Transconductance
VDS = 5V, ID = 15A
gfs
--
27
--
S
Diode Forward Voltage
IS = 1A, VGS = 0V
VSD
--
--
1.2
V
VDS =0V, VGS =0V, f=1MHz
Rg
--
1.4
2.8
Ω
Qg
--
12.3
--
Qgs
--
1.95
--
Qgd
--
3.08
--
Ciss
--
961
--
Coss
--
92.3
--
Crss
--
80.4
--
b
Dynamic
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 15V, ID = 15A,
VGS = 4.5V
VDS = 15V, VGS = 0V,
f = 1MHz
Reverse Recovery Time
IF= 15A, dI/dt= 100A/µs,
Reverse Recovery Charge
TJ=25 C
Switching
o
nC
pF
trr
--
6
--
ns
Qrr
--
1.38
--
nC
td(on)
--
3.02
--
tr
--
13.1
--
td(off)
--
28
--
tf
--
8.3
--
b,c
Turn-On Delay Time
Turn-On Rise Time
VDD = 10V, ID = 15A,
Turn-Off Delay Time
VGS = 4.5V, RG = 3.3Ω
Turn-Off Fall Time
Notes:
a. Pulse test: PW ≤ 300µs, duty cycle ≤ 2%
ns
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
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Version: A14
TSM4806
20V N-Channel MOSFET
Electrical Characteristics Curve (TA=25oC, unless otherwise noted)
Output Characteristics
On-Resistance vs. Gate-Source Voltage
Source-Drain Diode Forward Voltage
Gate Charge
Normalized VGS(th) vs. TJ
Normalized RDSON vs. TJ
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Version: A14
TSM4806
20V N-Channel MOSFET
Electrical Characteristics Curve (TA=25oC, unless otherwise noted)
Capacitance
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Version: A14
TSM4806
20V N-Channel MOSFET
SOP-8 Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y = Year Code
M = Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L = Lot Code
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Version: A14
TSM4806
20V N-Channel MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
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Version: A14