TSM4NB65 650V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω)(max) ID (A) 650 3.37 @ VGS =10V 4 General Description TO-251 (IPAK) The TSM4NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Block Diagram Features ● ● ● ● Low RDS(ON) 2.7Ω (Typ.) Low gate charge typical @ 14.5nC (Typ.) Low Crss typical @ 7.0pF (Typ.) 100% Avalanche Tested Ordering Information Part No. Package Packing TSM4NB65CH C5G TO-251 75pcs / Tube TSM4NB65CP ROG TO-252 2.5Kpcs / 13” Reel TSM4NB65CZ C0 TO-220 50pcs / Tube TSM4NB65CI C0 ITO-220 Note: “G” denotes for Halogen Free N-Channel MOSFET 50pcs / Tube Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit IPAK/DPAK ITO-220 TO-220 Unit Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS ±30 V 4 A 2.4 A Tc = 25ºC Continuous Drain Current Tc = 100ºC ID Pulsed Drain Current * IDM 16 A Single Pulse Avalanche Energy (Note 2) EAS 31.2 mJ dv/dt 4.5 V/ns Peak Diode Recovery dv/dt (Note 3) o Total Power Dissipation @ TC = 25 C Operating Junction Temperature Storage Temperature Range PTOT TJ TSTG 50 25 150 -55 to +150 70 W ºC o C Note: Limited by maximum junction temperature 1/9 Version: B13 TSM4NB65 650V N-Channel Power MOSFET Thermal Performance Parameter Symbol Thermal Resistance - Junction to Case RӨJC Thermal Resistance - Junction to Ambient Limit Unit IPAK/DPAK ITO-220 TO-220 2.5 5 1.78 o 62.5 o RӨJA 83 62.5 C/W C/W Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA BVDSS 650 -- -- V Drain-Source On-State Resistance VGS = 10V, ID = 2A RDS(ON) -- 2.7 3.37 Ω Gate Threshold Voltage VDS = VGS, ID = 250uA VGS(TH) 2.5 3.6 4.5 V Zero Gate Voltage Drain Current VDS = 650V, VGS = 0V IDSS -- -- 1 uA Gate Body Leakage VGS = ±30V, VDS = 0V IGSS -- -- ±100 nA Forward Transfer Conductance VDS = 40V, ID = 2A gfs -- 2.6 -- S VDS = 480V, ID = 4A, Qg -- 14.5 -- Gate-Source Charge VGS = 10V Qgs -- 3.4 -- Gate-Drain Charge (Note 4,5) Qgd -- 7 -- Ciss -- 500 -- Coss -- 53.2 -- Crss -- 7 -- td(on) -- 11 -- tr -- 20 -- td(off) -- 30 -- tf -- 19 -- Dynamic Total Gate Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz nC pF Switching Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VGS = 10V, ID = 4A, VDD = 300V, RG =25Ω (Note 4,5) nS Source-Drain Diode Ratings and Characteristic Source Current Integral reverse diode in IS -- -- 4 A Source Current (Pulse) the MOSFET ISM -- -- 16 A Diode Forward Voltage IS = 4A, VGS = 0V VSD -- -- 1.13 V Reverse Recovery Time VGS = 0V, IS =4A, tfr -- 522 -- nS dIF/dt = 100A/us Reverse Recovery Charge Qfr -Note 1: Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature Note 2: VDD = 50V, IAS=2.4A, L=10mH, RG =25Ω, Starting TJ=25ºC Note 3: ISD≤4A, di/dt≤200A/uS, VDD≤BVDSS, Starting TJ=25ºC Note 4: Pulse test: pulse width ≤300uS, duty cycle ≤2% Note 5: Essentially Independent of Operating Temperature 1.6 -- uC 2/9 Version: B13 TSM4NB65 650V N-Channel Power MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform EAS Test Circuit & Waveform 3/9 Version: B13 TSM4NB65 650V N-Channel Power MOSFET Diode Reverse Recovery Time Test Circuit & Waveform 4/9 Version: B13 TSM4NB65 650V N-Channel Power MOSFET Unit: Millimeters Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code 5/9 Version: B13 TSM4NB65 650V N-Channel Power MOSFET Unit: Millimeters Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code 6/9 Version: B13 TSM4NB65 650V N-Channel Power MOSFET Unit: Millimeters Marking Diagram Y = Year Code M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 7/9 Version: B13 TSM4NB65 650V N-Channel Power MOSFET Unit: Millimeters Marking Diagram Y = Year Code M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 8/9 Version: B13 TSM4NB65 650V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. 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