US5U30 Transistor 2.5V Drive Pch+SBD MOSFET US5U30 zStructure Silicon P-channel MOSFET Schottky Barrier DIODE zDimensions (Unit : mm) TUMT5 2.0 zFeatures 1) The US5U30 combines Pch MOSFET with a Schottky barrier diode in a TUMT5 package. 2) Low on-state resistance with fast switching. 3) Low voltage drive(2.5V) 4) Built-in schottky barrier diode has low forward voltage. 0.2Max. 1.3 Abbreviated symbol : U30 zApplications Load switch, DC/DC conversion zPackaging specifications Package Type Code Basic ordering unit (pieces) zEquivalent circuit Taping (5) (4) TR 3000 ∗2 US5U30 ∗1 (1) (2) ∗1 ESD protection diode ∗2 Body diode (3) (1)Gate (2)Source (3)Anode (4)Cathode (5)Drain Rev.B 1/4 US5U30 Transistor zAbsolute maximum ratings (Ta=25°C) <MOSFET> Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 Tch PD ∗3 Limits −20 ±12 ±1 ±4 −0.4 −4 150 0.7 Unit V V A A A A °C W / ELEMENT <Di> Repetitive peak reverse voltage Reverse voltage Forward current Forward current surge peak Junction temperature Power dissipation VRM VR IF IFSM Tj PD 30 20 0.5 2 150 0.5 V V A A °C W / ELEMENT <MOSFET AND Di> Total power dissipation Range of Storage temperature PD ∗3 Tstg 1.0 −55 to +150 W / TOTAL °C Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Channel temperature Power dissipation ∗2 ∗3 ∗1 Pw≤10µs, Duty cycle≤1% ∗2 60Hz•1cyc. ∗3 Mounted on a ceramic board zElectrical characteristics (Ta=25°C) <MOSFET> Parameter Symbol Min. IGSS − Gate-source leakage Drain-source breakdown voltage V(BR) DSS −20 − IDSS Zero gate voltage drain current VGS (th) −0.7 Gate threshold voltage − ∗ Static drain-source on-state − RDS (on) resistance − ∗ 0.7 Yfs Forward transfer admittance − Ciss Input capacitance − Coss Output capacitance − Crss Reverse transfer capacitance ∗ − td (on) Turn-on delay time ∗ − tr Rise time ∗ − td (off) Turn-off delay time ∗ − tf Fall time − Qg Total gate charge − Qgs Gate-source charge − Qgd Gate-drain charge Typ. − − − − 280 310 570 − 150 20 20 9 8 25 10 2.1 0.5 0.5 Max. ±10 − −1 −2.0 390 430 800 − − − − − − − − − − − Unit µA V µA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS=±12V, VDS=0V ID=−1mA, VGS=0V VDS=−20V, VGS=0V VDS=−10V, ID=−1mA ID=−1A, VGS=−4.5V ID=−1A, VGS=−4V ID=−0.5A, VGS=−2.5V VDS=−10V, ID=−0.5A VDS=−10V VGS=0V f=1MHz ID=−0.5A VDD −15V VGS=−4.5V RL=30Ω RG=10Ω VDD −15V VGS=−4.5V ID=−1A RL=15Ω RG=10Ω ∗ Pulsed <Body diode (source−drain)> Parameter Forward voltage Symbol Min. Typ. Max. Unit VSD − − −1.2 V Symbol Min. − Typ. − Max. 0.36 Unit V IF=0.1A − − − − 0.47 100 V µA IF=0.5A VR=20V Conditions IS=−0.4A, VGS=0V <Di > Parameter Forward voltage VF Reverse current IR Conditions Rev.B 2/4 US5U30 Transistor 1000 Static Drain−Source On−State Resistance RDS(on)[mΩ] 10 VDS=−10V Pulsed Ta=125°C 75°C 25°C −20°C 0.01 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 100 100 Ta=125°C 75°C 25°C −25°C 10 0.1 4.0 Static Drain−Source On−State Resistance RDS(on)[mΩ] Static Drain−Source On−State Resistance RDS(on)[mΩ] Ta=125°C 75°C 25°C −25°C 10 0.1 Fig.4 Static Drain−Source On−State Resistance vs.Drain−Current 250 1 100 200 150 100 50 0 2 4 6 8 10 Ta=125°C 75°C 25°C −25°C 0.1 Ta=25 C Pulsed VGS=−2.5V −4.0V −4.5V 10 0.1 12 1 Fig.6 Static Drain−Source On−State Resistance vs.Drain Current Fig.5 Static Drain−Source On−State Resistance vs.Gate−Source Voltage Ta=25 C f=1MHZ VGS=0V 1000 1000 Ciss 100 Ta=25 C VDD=−15V VGS=−4.5V RG=10Ω Pulsed 100 td(off) 10 0.5 1.0 1.5 2.0 10 0.01 0.1 1 10 tf td(on) tr Coss Crss 0.01 0 10 Drain Current : −ID[A] Gate−Source Voltage : −VGS[V] 10000 VGS=0V Pulsed Capacitance : C [pF] Reverse Drain Current : −IDR[A] 10 ID=−0.75A −1.5A 300 0 10 1 1000 Ta=25 C Pulsed 350 Drain Current : −ID[A] 10 Fig.3 Static Drain−Source On−State Resistance vs.Drain Current 400 VGS=−2.5V Pulsed 1 Drain Current : −ID[A] Fig.2 Static Drain−Source On−State Resistance vs.Drain Current Fig.1 Typical Transfer Characteristics 100 10 0.1 10 1 Ta=125°C 75°C 25°C −25°C Drain Current : −ID[A] Gate−Source Voltage : VGS[V] 1000 VGS=−4V Pulsed Static Drain-Source On−State Resistance RDS(on)[mΩ] 0.1 1000 VGS=−4.5V Pulsed Switching Time : t [ns] Drain Current : −ID (A) 1 0.001 Static Drain−Source On−State Resistance RDS(on)[mΩ] zElectrical characteristic curves 100 1 0.01 0.1 1 Source−Drain Voltage : −VSD[V] Drain−Source Voltage : −VDS[V] Drain Current : −ID[A] Fig.7 Reverse Drain Current vs. Source-Drain Current Fig.8 Typical Capactitance vs.Drain−Source Voltage Fig.9 Switching Characteristics Rev.B 10 3/4 US5U30 Transistor 6 Forward Current : IF [mA] Gate-Source Voltage: -VGS [V] 1000 Ta=25 C VDD=−15V ID=−2.5A RG=10Ω Pulsed 7 5 4 3 2 100 Ta=125°C 75°C 25°C −25°C 100 125°C Reverse Current : IR[A] 8 10 10 75°C 1 0.1 25°C 0.01 1 −25°C 0.001 1 0 0.1 0 1 2 3 4 5 0.0001 0 6 0.1 0.2 0.3 0.4 0.5 0.6 0 10 Forward Voltage :VF [V] 20 30 40 Reverse Voltage : VR[V] Total Gate Charge : Qg[nC] Fig.10 Dynamic Input Characteristics Fig.11 Forward Temperature Characteristics Fig.12 Reverse Temperature Characteristics zMeasurement circuits Pulse Width VGS 10% 50% 50% 90% 10% 10% VGS ID D.U.T. RG VDS 90% 90% VDS RL VDD td(on) tr tf td(off) ton toff Fig.14 Switching Waveforms Fig.13 Switching Time Measurement Circuit VG Qg VGS VGS ID VDS Qgs IG(Const) RG D.U.T. Qgd RL VDD Charge Fig.15 Gate Charge Measurement Circuit Fig.16 Gate Charge Waveforms Rev.B 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1