MBT3904DW - Taitron Components, Inc.

Dual General Purpose
Transistor NPN+NPN Silicon
MBT3904DW
Dual General Purpose Transistor
NPN+NPN Silicon
Features
• RoHS compliance
SOT-363
Maximum Ratings (T Ambient=25ºC unless noted otherwise)
Symbol
Description
MBT3904DW
Unit
VCEO
Collector-Emitter Voltage
40
V
VCBO
Collector-Base Voltage
60
V
VEBO
Emitter-Base Voltage
6.0
V
IC
Collector Current
200
mA
PD
Total Device Dissipation TA=25 °C (Note 1)
150
mW
Thermal Resistance, Junction to Ambient
833
°C/W
-55 to +150
°C
R θJA
TJ,TSTG
Junction and Storage, Temperature
Electrical Characteristics (T Ambient=25ºC unless noted otherwise)
Off Characteristics
Symbol
Description
Min.
Max.
Unit
Conditions
V(BR)CEO
Collector-Emitter Breakdown Voltage (Note 2)
40
-
V
IC=1mA, IB=0
V(BR)CBO
Collector-Base Breakdown Voltage
60
-
V
IC=10µA, IE=0
V(BR)EBO
Emitter-Base Breakdown Voltage
6.0
-
V
IE=10µA, IC=0
IBL
Base Cutoff Current
-
50
nA
VCE=30V, VEB=3.0V
ICEX
Collector Cutoff Current
-
50
nA
VCE=30V, VEB=3.0V
Note 1. Device Mounted FR4 glass epoxy printed circuit board using the minimum recommended footprint.
2. Pulse Test: Pulse Width ≤300uS, Duty Cycle≤ 2.0%.
TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com
Tel: (800)-TAITRON
Fax: (800)-TAITFA
(800)-824-8766
(800)-824-8329
(661)-257-6060
(661)-257-6415
Rev. A/CZ 2010-03-12
Page 1 of 9
Dual General Purpose Transistor NPN+NPN Silicon
MBT3904DW
On Characteristics
Symbol
hFE
Description
Min.
Max.
40
-
VCE=1V, IC=0.1mA
70
-
VCE=1V, IC=1mA
100
300
60
-
VCE=1V, IC=50mA
30
-
VCE=1V, IC=100mA
-
0.2
-
0.3
0.65
0.85
-
0.95
Description
Min.
Max.
Unit
Current Gain-Bandwidth Product
300
-
MHz
D.C. Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage (Note 2)
VBE(sat)
Base-Emitter Saturation Voltage (Note 2)
Unit
-
V
V
Conditions
VCE=1V, IC=10mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
Small-signal Characteristics
Symbol
fT
Cobo
Output Capacitance
-
4.0
pF
Cibo
Input Capacitance
-
8.0
pF
hie
Input Impedance
1.0
10
KΩ
hre
Voltage Feedback Ratio
0.5
8.0
x 10-4
hfe
Small-Signal Current Gain
100
400
-
hoe
Output Admittance
1.0
40
μ mhos
NF
Noise Figure
-
5.0
dB
Conditions
VCE=20V, IC=10mA,
f=100MHz
VCB=5V, IE=0,
f=1.0MHz
VEB=0.5V, IC=0,
f=1.0MHz
VCE= 10 V, IC=1.0mA,
f=1.0 kHz
VCE= 10V, IC=1.0mA,
f=1.0 kHz
VCE= 10V, IC=1.0mA,
f=1.0 kHz
VCE= 10V, IC=1.0mA,
f=1.0 kHz
VCE= 5.0V, IC= 100μA,
RS=1.0kΩ, f=1.0kHz
Rev. A/CZ 2010-03-12
www.taitroncomponents.com
Page 2 of 9
Dual General Purpose Transistor NPN+NPN Silicon
MBT3904DW
Switching Characteristics
Symbol
td
tr
ts
tf
Description
Min.
Max.
Delay Time
-
35
Rise Time
-
35
Storage Time
-
200
Fall Time
-
50
Unit
ns
Conditions
VCC= 3.0 V, VBE= -0.5 V
IC= 10mA, IB1= 1.0mA
VCC= 3.0 V,IC= 10mA,
IB1=IB2= 1.0mA
Equivalent Test Circuit
Fig.1- Delay and Rise Time
Fig.2- Storage and Fall Time
Total Shunt Capacitance of test jig and connectors
Rev. A/CZ 2010-03-12
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Dual General Purpose Transistor NPN+NPN Silicon
MBT3904DW
Typical Characteristics Curves (
TJ =25°C
--- TJ =125°C )
Fig.4- Charge Data
Charge Q (pC)
Capacitance (pF)
Fig.3- Capacitance
Collector Current IC (mA)
Reverse Bias Voltage (V)
Fig.6- Rise Time
Time (ns)
Rise Time tr (nS)
Fig.5- Turn-On Time
Collector Current IC (mA)
Collector Current IC (mA)
Rev. A/CZ 2010-03-12
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Page 4 of 9
Dual General Purpose Transistor NPN+NPN Silicon
MBT3904DW
Fig.8- Fall Time
Fall Time tf (ns)
Storage Time ts (ns)
Fig.7- Storage Time
Collector Current IC (mA)
Collector Current IC (mA)
Typical Audio Small-Signal Characteristics Noise Figure Variations
(VCE=5.0 V. TA=25°C, Bandwidth=1.0Hz)
Fig.10- Noise Figure
Noise Figure NF (dB)
Noise Figure NF (dB)
Fig.9- Noise Figure
Frequency f (kHz)
Source Resistance RS (kΩ)
Rev. A/CZ 2010-03-12
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Page 5 of 9
Dual General Purpose Transistor NPN+NPN Silicon
MBT3904DW
h Parameters (VCE=10V, f=1.0kHz, TA=25°C)
Fig.11- Current Gain
Current Gain hfe
Output Admittance hoe (μ mhos)
Fig.12- Output Admittance
Collector Current IC (mA)
Collector Current IC (mA)
Fig.14- Voltage Feedback Ratio
Input Impedance hie (KΩ)
Voltage Feedback Ratio hfe (x10-4)
Fig.13- Input Impedance
Collector Current IC (mA)
Collector Current IC (mA)
Rev. A/CZ 2010-03-12
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Page 6 of 9
Dual General Purpose Transistor NPN+NPN Silicon
MBT3904DW
Typical Static Characteristics
DC Current Gain hFE (Normalized)
Fig.15- DC Current Gain
Collector Current IC (mA)
Collector-Emitter Voltage VCE (V)
Fig.16- Collector Saturation Region
Base Current IB (mA)
Rev. A/CZ 2010-03-12
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Page 7 of 9
Dual General Purpose Transistor NPN+NPN Silicon
MBT3904DW
Fig.18- Temperature Coefficients
Voltage (V)
Temperature Coefficient (mV/°C)
Fig.17- “On” Voltage
Collector Current IC (mA)
Collector Current IC (mA)
Device Marking: MBT3904DW=MA
Dimensions in mm
DIM
SOT-363
MIN
MAX
A
0.10
0.30
B
1.15
1.35
C
2.00
2.20
0.65 REF
D
E
0.30
0.40
H
1.80
2.20
J
-
0.10
K
0.80
1.10
L
0.25
0.40
M
0.10
0.25
Rev. A/CZ 2010-03-12
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Page 8 of 9
Dual General Purpose Transistor NPN+NPN Silicon
MBT3904DW
How to contact us:
US HEADQUARTERS
28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162
Tel: (800) TAITRON (800) 247-2232 (661) 257-6060
Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415
Email: [email protected]
Http://www.taitroncomponents.com
TAITRON COMPONENTS MEXICO, S.A .DE C.V.
BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P.
42970 MEXICO
Tel: +52-55-5560-1519
Fax: +52-55-5560-2190
TAITRON COMPONENTS INCORPORATED REPRESENTAÇÕES DO BRASIL LTDA
RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP 04035-001 BRAZIL
Tel: +55-11-5574-7949
Fax: +55-11-5572-0052
TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE
METROBANK PLAZA, 1160 WEST YAN’ AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA
Tel: +86-21-5424-9942
Fax: +86-21-5424-9931
Rev. A/CZ 2010-03-12
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