MBT3946DW - Taitron Components, Inc.

Dual General Purpose
Transistor NPN+PNP Silicon
MBT3946DW
Dual General Purpose Transistor
NPN+PNP Silicon
Features
• RoHS compliance
SOT-363
Maximum Ratings (T Ambient=25ºC unless noted otherwise)
Symbol
VCEO
VCBO
VEBO
IC
PD
R θJA
TJ,TSTG
Description
MBT3946DW
Unit
NPN
PNP
NPN
Collector-Base Voltage
PNP
NPN
Emitter-Base Voltage
PNP
NPN
Collector Current
PNP
Total Device Dissipation TA=25 °C (Note 1)
40
-40
60
-40
6.0
-5.0
200
-200
150
mW
Thermal Resistance, Junction to Ambient
833
°C/W
-55 to +150
°C
Collector-Emitter Voltage
Junction and Storage, Temperature
V
V
V
mA
Electrical Characteristics (T Ambient=25ºC unless noted otherwise)
Off Characteristics
Symbol
Description
V(BR)CEO
Collector-Emitter
Breakdown Voltage (Note 2)
V(BR)CBO
Collector-Base
Breakdown Voltage
V(BR)EBO
Emitter-Base Breakdown Voltage
IBL
Base Cutoff Current
ICEX
Collector Cutoff Current
Min.
Max.
40
-40
60
-40
6.0
-5.0
-
50
-50
50
-50
NPN
PNP
NPN
PNP
NPN
PNP
NPN
PNP
NPN
PNP
Unit
Conditions
IC=1mA, IB=0
IC=-1mA, IB=0
IC=10µA, IE=0
IC=-10µA, IE=0
IE=10µA, IC=0
IE=-10µA, IC=0
VCE=30V, VEB=3.0V
VCE=-30V, VEB=-3.0V
VCE=30V, VEB=3.0V
VCE=-30V, VEB=-3.0V
V
V
V
nA
nA
Note 1. Device Mounted FR4 glass epoxy printed circuit board using the minimum recommended footprint.
2. Pulse Test: Pulse Width ≤300uS, Duty Cycle≤ 2.0%.
TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com
Tel: (800)-TAITRON
Fax: (800)-TAITFA
(800)-824-8766
(800)-824-8329
(661)-257-6060
(661)-257-6415
Rev. A/CZ 2010-03-15
Page 1 of 14
Dual General Purpose Transistor NPN+PNP Silicon
MBT3946DW
On Characteristics (Note 2)
Symbol
Description
NPN
hFE
D.C. Current Gain
Min.
Max.
40
-
VCE=1V, IC=0.1mA
70
-
VCE=1V, IC=1mA
100
300
VCE=1V, IC=10mA
60
-
VCE=1V, IC=50mA
30
-
60
Unit
-
NPN
VCE(sat)
Collector-Emitter Saturation
Voltage
PNP
NPN
VBE(sat)
Base-Emitter Saturation Voltage
PNP
100
VCE=1V, IC=100mA
VCE=-1V, IC=-0.1mA
VCE=-1V, IC=-1mA
80
PNP
Conditions
VCE=-1V, IC=-10mA
300
60
VCE=-1V, IC=-50mA
30
VCE=-1V, IC=-100mA
IC=10mA, IB=1mA
-
0.2
-
0.3
-
-0.25
-
-0.40
IC=-50mA, IB=-5mA
0.65
0.85
IC=10mA, IB=1mA
-
0.95
-0.65
-0.85
-
-0.95
V
V
IC=50mA, IB=5mA
IC=-10mA, IB=-1mA
IC=50mA, IB=5mA
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
Rev. A/CZ 2010-03-15
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Page 2 of 14
Dual General Purpose Transistor NPN+PNP Silicon
MBT3946DW
Small-signal Characteristics
Symbol
fT
Cobo
Cibo
hie
hre
hfe
hoe
NF
Description
Min.
Max.
NPN
300
-
PNP
250
-
NPN
-
4.0
PNP
-
4.5
NPN
-
8.0
PNP
-
10.0
NPN
1.0
10
PNP
2.0
12
NPN
0.5
8.0
PNP
0.1
10
NPN
100
400
PNP
100
400
NPN
1.0
40
PNP
3.0
60
NPN
-
5.0
PNP
-
4.0
Current Gain-Bandwidth Product
Unit
MHz
Output Capacitance
pF
Input Capacitance
pF
KΩ
Input Impedance
Voltage Feedback Radio
-4
x 10
-
Small-Signal Current Gain
μ mhos
Output Admittance
dB
Noise Figure
Conditions
VCE=20V, IC=10mA,
f=100MHz
VCE=-20V, IC=-10mA,
f=100MHz
VCB=5V, IE=0,
f=1.0MHz
VCB=-5V, IE=0,
f=1.0MHz
VEB=0.5V, IC=0,
f=1.0MHz
VEB=-0.5V, IC=0,
f=1.0MHz
VCE= 10 V, IC=1.0mA,
f=1.0 kHz
VCE= -10 V, IC=-1.0mA,
f=1.0 kHz
VCE= 10V, IC=1.0mA,
f=1.0 kHz
VCE=-10V, IC=-1.0mA,
f=1.0 kHz
VCE= 10V, IC=1.0mA,
f=1.0 kHz
VCE= -10V, IC=-1.0mA,
f=1.0 kHz
VCE= 10V, IC=1.0mA,
f=1.0 kHz
VCE= -10V, IC=-1.0mA,
f=1.0 kHz
VCE= 5.0V, IC= 100μA,
RS=1.0kΩ, f=1.0kHz
VCE= -5.0V, IC= -100μA,
RS=1.0kΩ, f=1.0kHz
Rev. A/CZ 2010-03-15
www.taitroncomponents.com
Page 3 of 14
Dual General Purpose Transistor NPN+PNP Silicon
MBT3946DW
Switching Characteristics
Symbol
Description
td
Delay Time
tr
Rise Time
ts
Storage Time
tf
Fall Time
Min.
Max.
NPN
-
35
PNP
-
35
NPN
-
35
PNP
-
35
NPN
-
200
PNP
-
225
NPN
-
50
PNP
-
75
Unit
ns
ns
ns
ns
Conditions
VCC= 3.0 V, VBE= -0.5 V
IC= 10mA, IB1= 1.0mA
VCC= -3.0 V, VBE= 0.5 V
IC= -10mA, IB1= -1.0mA
VCC= 3.0 V, VBE= -0.5 V
IC= 10mA, IB1= 1.0mA
VCC= -3.0 V, VBE= 0.5 V
IC= -10mA, IB1= -1.0mA
VCC= 3.0 V,IC= 10mA,
IB1=IB2= 1.0mA
VCC= -3.0 V,IC= -10mA,
IB1=IB2= -1.0mA
VCC= 3.0 V,IC= 10mA,
IB1=IB2= 1.0mA
VCC= -3.0 V,IC= -10mA,
IB1=IB2= -1.0mA
Equivalent Test Circuit (NPN)
Fig.1- Delay and Rise Time
Fig.2- Storage and Fall Time
Total Shunt Capacitance of test jig and connectors
Rev. A/CZ 2010-03-15
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Page 4 of 14
Dual General Purpose Transistor NPN+PNP Silicon
MBT3946DW
Typical Characteristics Curves (NPN) (
TJ =25°C
Fig.4- Charge Data
Fig.3- Capacitance
Charge Q (pC)
Capacitance (pF)
--- TJ =125°C )
Collector Current IC (mA)
Reverse Bias Voltage (V)
Fig.6- Rise Time
Time (ns)
Rise Time tr (nS)
Fig.5- Turn-On Time
Collector Current IC (mA)
Collector Current IC (mA)
Rev. A/CZ 2010-03-15
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Page 5 of 14
Dual General Purpose Transistor NPN+PNP Silicon
MBT3946DW
Fig.8- Fall Time
Fall Time tf (ns)
Storage Time ts (ns)
Fig.7- Storage Time
Collector Current IC (mA)
Collector Current IC (mA)
Typical Audio Small-Signal Characteristics Noise Figure Variations (NPN)
(VCE=5.0 V. TA=25°C, Bandwidth=1.0Hz)
Fig.10- Noise Figure
Noise Figure NF (dB)
Noise Figure NF (dB)
Fig.9- Noise Figure
Frequency f (kHz)
Source Resistance RS (kΩ)
Rev. A/CZ 2010-03-15
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Page 6 of 14
Dual General Purpose Transistor NPN+PNP Silicon
MBT3946DW
h Parameters (NPN) (VCE=10V, f=1.0kHz, TA=25°C)
Fig.11- Current Gain
Current Gain hfe
Output Admittance hoe (μ mhos)
Fig.12- Output Admittance
Collector Current IC (mA)
Collector Current IC (mA)
Fig.14- Voltage Feedback Ration
Input Impedance hie (KΩ)
Voltage Feedback Ratio hfe (x10-4)
Fig.13- Input Impedance
Collector Current IC (mA)
Collector Current IC (mA)
Rev. A/CZ 2010-03-15
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Page 7 of 14
Dual General Purpose Transistor NPN+PNP Silicon
MBT3946DW
DC Current Gain hFE (Normalized)
Typical Static Characteristics (NPN)
Fig.15- DC Current Gain
Collector Current IC (mA)
Collector-Emitter Voltage VCE (V)
Fig.16- Collector Saturation Region
Base Current IB (mA)
Fig.18- Temperature Coefficients
Voltage (V)
Temperature Coefficient (mV/°C)
Fig.17- “On” Voltage
Collector Current IC (mA)
Collector Current IC (mA)
Rev. A/CZ 2010-03-15
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Page 8 of 14
Dual General Purpose Transistor NPN+PNP Silicon
MBT3946DW
Equivalent Test Circuit (PNP)
Fig.19- Delay and Rise Time
Fig.20- Storage and Fall Time
Total Shunt Capacitance of test jig and connectors
Typical Characteristics Curves (PNP) (
TJ =25°C
Fig.22- Charge Data
Fig.21- Capacitance
Charge Q (pC)
Capacitance (pF)
--- TJ =125°C )
Reverse Bias Voltage (V)
Collector Current IC (mA)
Rev. A/CZ 2010-03-15
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Page 9 of 14
Dual General Purpose Transistor NPN+PNP Silicon
MBT3946DW
Fig.24- Fall Time
Time (ns)
Fall Time tf (nS)
Fig.23- Turn-On Time
Collector Current IC (mA)
Collector Current IC (mA)
Typical Audio Small-Signal Characteristics Noise Figure Variations (PNP)
(VCE=-5.0 V. TA=25°C, Bandwidth=1.0Hz)
Fig.26- Noise Figure
Noise Figure NF (dB)
Noise Figure NF (dB)
Fig.25- Noise Figure
Frequency f (kHz)
Source Resistance RS (kΩ)
Rev. A/CZ 2010-03-15
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Page 10 of
Dual General Purpose Transistor NPN+PNP Silicon
MBT3946DW
h Parameters (PNP) (VCE=-10V, f=1.0kHz, TA=25°C)
Fig.27- Current Gain
Current Gain hfe
Output Admittance hoe (μ mhos)
Fig.28- Output Admittance
Collector Current IC (mA)
Collector Current IC (mA)
Fig.30- Voltage Feedback Ration
Input Impedance hie (KΩ)
Voltage Feedback Ratio hfe (x10-4)
Fig.29- Input Impedance
Collector Current IC (mA)
Collector Current IC (mA)
Rev. A/CZ 2010-03-15
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Page 11 of
Dual General Purpose Transistor NPN+PNP Silicon
MBT3946DW
DC Current Gain hFE (Normalized)
Typical Static Characteristics (PNP)
Fig.31- DC Current Gain
Collector Current IC (mA)
Collector-Emitter Voltage VCE (V)
Fig.32- Collector Saturation Region
Base Current IB (mA)
Fig.34- Temperature Coefficients
Voltage (V)
Temperature Coefficient (mV/°C)
Fig.33- “On” Voltage
Collector Current IC (mA)
Collector Current IC (mA)
Rev. A/CZ 2010-03-15
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Page 12 of
Dual General Purpose Transistor NPN+PNP Silicon
MBT3946DW
Device Marking: MBT3946DW=46
Dimensions in mm
DIM
SOT-363
MIN
MAX
A
0.10
0.30
B
1.15
1.35
C
2.00
2.20
0.65 REF
D
E
0.30
0.40
H
1.80
2.20
J
-
0.10
K
0.80
1.10
L
0.25
0.40
M
0.10
0.25
Rev. A/CZ 2010-03-15
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Page 13 of
Dual General Purpose Transistor NPN+PNP Silicon
MBT3946DW
How to contact us:
US HEADQUARTERS
28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162
Tel: (800) TAITRON (800) 247-2232 (661) 257-6060
Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415
Email: [email protected]
Http://www.taitroncomponents.com
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Tel: +86-21-5424-9942
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