Dual General Purpose Transistor NPN+PNP Silicon MBT3946DW Dual General Purpose Transistor NPN+PNP Silicon Features • RoHS compliance SOT-363 Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol VCEO VCBO VEBO IC PD R θJA TJ,TSTG Description MBT3946DW Unit NPN PNP NPN Collector-Base Voltage PNP NPN Emitter-Base Voltage PNP NPN Collector Current PNP Total Device Dissipation TA=25 °C (Note 1) 40 -40 60 -40 6.0 -5.0 200 -200 150 mW Thermal Resistance, Junction to Ambient 833 °C/W -55 to +150 °C Collector-Emitter Voltage Junction and Storage, Temperature V V V mA Electrical Characteristics (T Ambient=25ºC unless noted otherwise) Off Characteristics Symbol Description V(BR)CEO Collector-Emitter Breakdown Voltage (Note 2) V(BR)CBO Collector-Base Breakdown Voltage V(BR)EBO Emitter-Base Breakdown Voltage IBL Base Cutoff Current ICEX Collector Cutoff Current Min. Max. 40 -40 60 -40 6.0 -5.0 - 50 -50 50 -50 NPN PNP NPN PNP NPN PNP NPN PNP NPN PNP Unit Conditions IC=1mA, IB=0 IC=-1mA, IB=0 IC=10µA, IE=0 IC=-10µA, IE=0 IE=10µA, IC=0 IE=-10µA, IC=0 VCE=30V, VEB=3.0V VCE=-30V, VEB=-3.0V VCE=30V, VEB=3.0V VCE=-30V, VEB=-3.0V V V V nA nA Note 1. Device Mounted FR4 glass epoxy printed circuit board using the minimum recommended footprint. 2. Pulse Test: Pulse Width ≤300uS, Duty Cycle≤ 2.0%. TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON Fax: (800)-TAITFA (800)-824-8766 (800)-824-8329 (661)-257-6060 (661)-257-6415 Rev. A/CZ 2010-03-15 Page 1 of 14 Dual General Purpose Transistor NPN+PNP Silicon MBT3946DW On Characteristics (Note 2) Symbol Description NPN hFE D.C. Current Gain Min. Max. 40 - VCE=1V, IC=0.1mA 70 - VCE=1V, IC=1mA 100 300 VCE=1V, IC=10mA 60 - VCE=1V, IC=50mA 30 - 60 Unit - NPN VCE(sat) Collector-Emitter Saturation Voltage PNP NPN VBE(sat) Base-Emitter Saturation Voltage PNP 100 VCE=1V, IC=100mA VCE=-1V, IC=-0.1mA VCE=-1V, IC=-1mA 80 PNP Conditions VCE=-1V, IC=-10mA 300 60 VCE=-1V, IC=-50mA 30 VCE=-1V, IC=-100mA IC=10mA, IB=1mA - 0.2 - 0.3 - -0.25 - -0.40 IC=-50mA, IB=-5mA 0.65 0.85 IC=10mA, IB=1mA - 0.95 -0.65 -0.85 - -0.95 V V IC=50mA, IB=5mA IC=-10mA, IB=-1mA IC=50mA, IB=5mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA Rev. A/CZ 2010-03-15 www.taitroncomponents.com Page 2 of 14 Dual General Purpose Transistor NPN+PNP Silicon MBT3946DW Small-signal Characteristics Symbol fT Cobo Cibo hie hre hfe hoe NF Description Min. Max. NPN 300 - PNP 250 - NPN - 4.0 PNP - 4.5 NPN - 8.0 PNP - 10.0 NPN 1.0 10 PNP 2.0 12 NPN 0.5 8.0 PNP 0.1 10 NPN 100 400 PNP 100 400 NPN 1.0 40 PNP 3.0 60 NPN - 5.0 PNP - 4.0 Current Gain-Bandwidth Product Unit MHz Output Capacitance pF Input Capacitance pF KΩ Input Impedance Voltage Feedback Radio -4 x 10 - Small-Signal Current Gain μ mhos Output Admittance dB Noise Figure Conditions VCE=20V, IC=10mA, f=100MHz VCE=-20V, IC=-10mA, f=100MHz VCB=5V, IE=0, f=1.0MHz VCB=-5V, IE=0, f=1.0MHz VEB=0.5V, IC=0, f=1.0MHz VEB=-0.5V, IC=0, f=1.0MHz VCE= 10 V, IC=1.0mA, f=1.0 kHz VCE= -10 V, IC=-1.0mA, f=1.0 kHz VCE= 10V, IC=1.0mA, f=1.0 kHz VCE=-10V, IC=-1.0mA, f=1.0 kHz VCE= 10V, IC=1.0mA, f=1.0 kHz VCE= -10V, IC=-1.0mA, f=1.0 kHz VCE= 10V, IC=1.0mA, f=1.0 kHz VCE= -10V, IC=-1.0mA, f=1.0 kHz VCE= 5.0V, IC= 100μA, RS=1.0kΩ, f=1.0kHz VCE= -5.0V, IC= -100μA, RS=1.0kΩ, f=1.0kHz Rev. A/CZ 2010-03-15 www.taitroncomponents.com Page 3 of 14 Dual General Purpose Transistor NPN+PNP Silicon MBT3946DW Switching Characteristics Symbol Description td Delay Time tr Rise Time ts Storage Time tf Fall Time Min. Max. NPN - 35 PNP - 35 NPN - 35 PNP - 35 NPN - 200 PNP - 225 NPN - 50 PNP - 75 Unit ns ns ns ns Conditions VCC= 3.0 V, VBE= -0.5 V IC= 10mA, IB1= 1.0mA VCC= -3.0 V, VBE= 0.5 V IC= -10mA, IB1= -1.0mA VCC= 3.0 V, VBE= -0.5 V IC= 10mA, IB1= 1.0mA VCC= -3.0 V, VBE= 0.5 V IC= -10mA, IB1= -1.0mA VCC= 3.0 V,IC= 10mA, IB1=IB2= 1.0mA VCC= -3.0 V,IC= -10mA, IB1=IB2= -1.0mA VCC= 3.0 V,IC= 10mA, IB1=IB2= 1.0mA VCC= -3.0 V,IC= -10mA, IB1=IB2= -1.0mA Equivalent Test Circuit (NPN) Fig.1- Delay and Rise Time Fig.2- Storage and Fall Time Total Shunt Capacitance of test jig and connectors Rev. A/CZ 2010-03-15 www.taitroncomponents.com Page 4 of 14 Dual General Purpose Transistor NPN+PNP Silicon MBT3946DW Typical Characteristics Curves (NPN) ( TJ =25°C Fig.4- Charge Data Fig.3- Capacitance Charge Q (pC) Capacitance (pF) --- TJ =125°C ) Collector Current IC (mA) Reverse Bias Voltage (V) Fig.6- Rise Time Time (ns) Rise Time tr (nS) Fig.5- Turn-On Time Collector Current IC (mA) Collector Current IC (mA) Rev. A/CZ 2010-03-15 www.taitroncomponents.com Page 5 of 14 Dual General Purpose Transistor NPN+PNP Silicon MBT3946DW Fig.8- Fall Time Fall Time tf (ns) Storage Time ts (ns) Fig.7- Storage Time Collector Current IC (mA) Collector Current IC (mA) Typical Audio Small-Signal Characteristics Noise Figure Variations (NPN) (VCE=5.0 V. TA=25°C, Bandwidth=1.0Hz) Fig.10- Noise Figure Noise Figure NF (dB) Noise Figure NF (dB) Fig.9- Noise Figure Frequency f (kHz) Source Resistance RS (kΩ) Rev. A/CZ 2010-03-15 www.taitroncomponents.com Page 6 of 14 Dual General Purpose Transistor NPN+PNP Silicon MBT3946DW h Parameters (NPN) (VCE=10V, f=1.0kHz, TA=25°C) Fig.11- Current Gain Current Gain hfe Output Admittance hoe (μ mhos) Fig.12- Output Admittance Collector Current IC (mA) Collector Current IC (mA) Fig.14- Voltage Feedback Ration Input Impedance hie (KΩ) Voltage Feedback Ratio hfe (x10-4) Fig.13- Input Impedance Collector Current IC (mA) Collector Current IC (mA) Rev. A/CZ 2010-03-15 www.taitroncomponents.com Page 7 of 14 Dual General Purpose Transistor NPN+PNP Silicon MBT3946DW DC Current Gain hFE (Normalized) Typical Static Characteristics (NPN) Fig.15- DC Current Gain Collector Current IC (mA) Collector-Emitter Voltage VCE (V) Fig.16- Collector Saturation Region Base Current IB (mA) Fig.18- Temperature Coefficients Voltage (V) Temperature Coefficient (mV/°C) Fig.17- “On” Voltage Collector Current IC (mA) Collector Current IC (mA) Rev. A/CZ 2010-03-15 www.taitroncomponents.com Page 8 of 14 Dual General Purpose Transistor NPN+PNP Silicon MBT3946DW Equivalent Test Circuit (PNP) Fig.19- Delay and Rise Time Fig.20- Storage and Fall Time Total Shunt Capacitance of test jig and connectors Typical Characteristics Curves (PNP) ( TJ =25°C Fig.22- Charge Data Fig.21- Capacitance Charge Q (pC) Capacitance (pF) --- TJ =125°C ) Reverse Bias Voltage (V) Collector Current IC (mA) Rev. A/CZ 2010-03-15 www.taitroncomponents.com Page 9 of 14 Dual General Purpose Transistor NPN+PNP Silicon MBT3946DW Fig.24- Fall Time Time (ns) Fall Time tf (nS) Fig.23- Turn-On Time Collector Current IC (mA) Collector Current IC (mA) Typical Audio Small-Signal Characteristics Noise Figure Variations (PNP) (VCE=-5.0 V. TA=25°C, Bandwidth=1.0Hz) Fig.26- Noise Figure Noise Figure NF (dB) Noise Figure NF (dB) Fig.25- Noise Figure Frequency f (kHz) Source Resistance RS (kΩ) Rev. A/CZ 2010-03-15 www.taitroncomponents.com Page 10 of Dual General Purpose Transistor NPN+PNP Silicon MBT3946DW h Parameters (PNP) (VCE=-10V, f=1.0kHz, TA=25°C) Fig.27- Current Gain Current Gain hfe Output Admittance hoe (μ mhos) Fig.28- Output Admittance Collector Current IC (mA) Collector Current IC (mA) Fig.30- Voltage Feedback Ration Input Impedance hie (KΩ) Voltage Feedback Ratio hfe (x10-4) Fig.29- Input Impedance Collector Current IC (mA) Collector Current IC (mA) Rev. A/CZ 2010-03-15 www.taitroncomponents.com Page 11 of Dual General Purpose Transistor NPN+PNP Silicon MBT3946DW DC Current Gain hFE (Normalized) Typical Static Characteristics (PNP) Fig.31- DC Current Gain Collector Current IC (mA) Collector-Emitter Voltage VCE (V) Fig.32- Collector Saturation Region Base Current IB (mA) Fig.34- Temperature Coefficients Voltage (V) Temperature Coefficient (mV/°C) Fig.33- “On” Voltage Collector Current IC (mA) Collector Current IC (mA) Rev. A/CZ 2010-03-15 www.taitroncomponents.com Page 12 of Dual General Purpose Transistor NPN+PNP Silicon MBT3946DW Device Marking: MBT3946DW=46 Dimensions in mm DIM SOT-363 MIN MAX A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 0.65 REF D E 0.30 0.40 H 1.80 2.20 J - 0.10 K 0.80 1.10 L 0.25 0.40 M 0.10 0.25 Rev. A/CZ 2010-03-15 www.taitroncomponents.com Page 13 of Dual General Purpose Transistor NPN+PNP Silicon MBT3946DW How to contact us: US HEADQUARTERS 28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162 Tel: (800) TAITRON (800) 247-2232 (661) 257-6060 Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415 Email: [email protected] Http://www.taitroncomponents.com TAITRON COMPONENTS MEXICO, S.A .DE C.V. BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P. 42970 MEXICO Tel: +52-55-5560-1519 Fax: +52-55-5560-2190 TAITRON COMPONENTS INCORPORATED REPRESENTAÇÕES DO BRASIL LTDA RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP 04035-001 BRAZIL Tel: +55-11-5574-7949 Fax: +55-11-5572-0052 TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE METROBANK PLAZA, 1160 WEST YAN’ AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA Tel: +86-21-5424-9942 Fax: +86-21-5424-9931 Rev. A/CZ 2010-03-15 www.taitroncomponents.com Page 14 of