WILLAS FM120-M+ BSS84LT1 THRU FM1200-M+ mAmps, 50 Volts 130 BARRIER RECTIFIERS -20V- 200V Power 1.0A SURFACEMOSFET MOUNT SCHOTTKY SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. high efficiency. • Low power loss, SOT–23 P–Channel 0.146(3.7) 0.130(3.3) • High current capability, low forward voltage drop. miniature surface mount MOSFETs reduce power loss High surge capability. •These conserve energy, makingprotection. this device ideal for use in small power for overvoltage • Guardring switching. • Ultra high-speed management circuitry. Typical applications are dc–dc converters, load chip, metal silicon junction.and battery–powered • Silicon epitaxial switching, powerplanar management in portable parts environmental standards • Lead-free products such asmeet computers, printers, cellularof and cordless telephones. MIL-STD-19500 /228 • • Energy Efficient RoHS product for packing code suffix "G" SOT–23 Surface Mount Package Saves Board Space • Miniature Halogen free product for packing code suffix "H" 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) data • Mechanical Pb-Free package is available 0.040(1.0) 0.024(0.6) Epoxy :product UL94-V0for rated flame retardant • RoHS packing code suffix ”G” Case : Molded • Halogen free plastic, productSOD-123H for packing code suffix “H” , • Terminals :Plated terminals, solderable per MIL-STD-750 SOT –230.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any Drain • Weight : Approximated 0.0113gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Marking Code VRRM 12 20 13 30 14 40 15 50 16 60 Maximum RMS Voltage VRMS 14 21 28 35 Maximum DC Blocking Voltage VDC 20 30 40 50 2 Maximum Recurrent Peak Reverse Voltage Source IO MAXIMUM RATINGS (T J = unless otherwise noted) Peak Forward Surge Current 8.3 ms single half sine-wave IFSM 25 °C superimposed on rated load (JEDEC method) Voltage – Continuous OperatingGate–to–Source Temperature Range Symbol RΘJA V CJDSS TV J GS Storage Temperature Drain CurrentRange TSTG Rating Typical Thermal Resistance (Note 2) Drain–to–Source Voltage Typical Junction Capacitance (Note 1) – Continuous @ TA = 25°C – Pulsed Drain Current (tp ≤ 10 µs) CHARACTERISTICS MaximumTotal Forward Voltage at 1.0A@ DCT = 25°C Power Dissipation A Maximum Average Reverse Current at @T A=25℃ Operating and Storage Temperature Rated DC Blocking Range Voltage @T A=125℃ 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Maximum Lead Temperature for Soldering 2012-06 2012-10 100 150 120 200 Volts 42 56 70 105 140 Volts 60 80 100 150 200 Volts Value 50 Unit 40 120 Vdc ± 20-55 to +125 Vdc PD Amps Amps PD = Device Code M = Month Code ℃/W -55 to +150 PF ℃ - 65 to +175 ℃ mA 130 520FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT IDM FM120-MH SYMBOL ORDERING INFORMATION Volts 0.9 0.92 VFP 0.50 0.70 0.85 225 mW D Device Package Shipping 0.5 mAmps TIJR, Tstg – 55 to °C BSS84LT1 SOT-23 3000/Tape&Reel 10 150 NOTES: Thermal Resistance – Junction–to–Ambient 2- Thermal Resistance Junction to Ambient Purposes,From for 10 seconds 80 1.0 30 Maximum Average Forward Rectified Current Marking Diagram 18 10 115 M Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. 1 For capacitive load, derateGate current by 20% ID RθJA 556 °C/W TL 260 °C WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU BSS84LT1 FM1200-M+ mAmps, 50 Volts 130 BARRIER Power MOSFET 1.0A SURFACE MOUNT SCHOTTKY RECTIFIERS -20V- 200V SOD-123+ PACKAGE ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Package Features Characteristic power dissipation offers • Batch process design, excellent better reverse leakage current and thermal resistance. OFF CHARACTERISTICS • Low profile surface mounted application in order to Drain–to–Source Voltage optimize board Breakdown space. (VGS = 0 Vdc, ID = 250 µAdc) power loss, high efficiency. • Low HighGate current capability, low forward voltage drop. •Zero Voltage Drain Current (VDS = 25 capability. Vdc, VGS = 0 Vdc) surge • High (VDS = 50for Vdc, VGS = 0 Vdc) overvoltage protection. • Guardring (VDShigh-speed = 50 Vdc, Vswitching. GS = 0 Vdc, TJ = 125°C) • Ultra Pb Free Product outline Symbol Min Typ Max Unit – Vdc SOD-123H V(BR)DSS 50 IDSS Silicon epitaxial planar chip, metal •Gate–Body Leakage Current (VGS = ± silicon 20 Vdc,junction. VDS = 0 Vdc) • Lead-free parts meet environmental standards of ONMIL-STD-19500 CHARACTERISTICS /228 (Note 1.) RoHS productThreaded for packing code suffix "G" Voltage •Gate–Source (VDS = free VGSproduct , ID = 1.0 Halogen formAdc) packing code suffix "H" Mechanical data Static Drain–to–Source On–Resistance (VGS :=UL94-V0 5.0 Vdc, Irated mAdc) D = 100 flame retardant • Epoxy Admittance Case : Molded plastic, SOD-123H •Transfer , (VDS = 25 Vdc, ID = 100 mAdc, f = 1.0 kHz) • Terminals :Plated terminals, solderable per MIL-STD-750 – 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. µAdc – – – – – – 0.1 15 60 0.071(1.8) IGSS – – ±10 nAdc VGS(th) 0.8 – 2.0 Vdc rDS(on) – 5.0 10 Ohms |yfs| 50 – 0.031(0.8) Typ. 0.056(1.4) 0.040(1.0) 0.024(0.6) –0.031(0.8) Typ.mS DYNAMIC CHARACTERISTICS Method 2026 Capacitance •Input Polarity : Indicated by cathode band Output Capacitance • Mounting Position : Any •Transfer Weight Capacitance : Approximated 0.011 gram (VDS = 5.0 Vdc) CissDimensions–in inches and 30(millimeters) – (VDS = 5.0 Vdc) Coss – 10 – (VDG = 5.0 Vdc) Crss – 5.0 – td(on) – 2.5 – tr – 1.0 – td(off) – 16 – pF SWITCHING CHARACTERISTICS (Note 2.) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Turn–On Delay Time Ratings at 25℃ ambient temperature unless otherwise specified. Rise Time (VDD = –15 15 Vdc, ID = –2.5 2.5 Adc, Single phase half wave, 60Hz, resistive of inductive load. R = 50 Ω) L For capacitive load, derate current by 20% Turn–Off Delay Time Fall Time FM160-MH tf – FM180-MH 8.0 FM1100-MH – FM1150-MH FM1200-MH UNIT SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH RATINGS Marking Code Gate Charge 12 13 14 20 30 40 VRRM SOURCE–DRAIN DIODE CHARACTERISTICS 14 21 28 Maximum RMS Voltage VRMS Continuous Current Maximum DC Blocking Voltage 20 30 40 VDC Pulsed Current Maximum Average Forward Rectified Current IO Forward Voltage (Note 2.) Peak Forward Surge Current 8.3 ms single half sine-wave 1. Pulse Test: Pulse Width ≤ 300 µs, Duty CycleIFSM ≤ 2%. superimposed on rated load (JEDEC method) 2. Switching characteristics are independent of operating junction temperature. Typical Thermal Resistance (Note 2) RΘJA Maximum Recurrent Peak Reverse Voltage Typical Junction Capacitance (Note 1) Operating Temperature Range 0.6 I D , DDAIN CUDDENT (AMPS) VDSRange = 10 V Storage Temperature TSTG 0.5 Maximum Average Reverse Current at @T A=25℃ NOTES: 25°C IR @T A=125℃ 0.1 2012-10 56 – 70 0.130 100 0.520 – 80 – 1.0 – 30 10 – 100 – 2.5 115 pC 120 150 200 Volts 105 140 Volts 200 Volts 150 V 1.5 2 Amps ℃/W PF -55 to +150 - 65 to +175 ℃ VGS = 3.5 V ℃ 3.25 V 0.4 0.70 0.9 0.85 0.5 2.5 3 3.5 4 Volts mAmps 10 0.2 2.75 V 2.5 V 0.1 0 0.92 3.0 V 2.25 V 0.05 1 A Amps – 0.15 2- Thermal Resistance From Junction to Ambient 2012-06 186000 80 40 0.25 0.2 0 42 60 VSD 0.500.35 0.3 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 35 IS 50 ISM TJ = 25°C 0.45 150°C VF Maximum Forward 0.4 Voltage at 1.0A DC 16 – 60 -55°C FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT SYMBOL CHARACTERISTICS 0.3 Rated DC Blocking Voltage 15 Q T 50 TYPICAL CHARACTERISTICS120 CJ ELECTRICAL -55 to +125 0.5 TJ I D , DDAIN CUDDENT (AMPS) ns 0 1 2 3 4 5 6 7 8 VGS, GATE-TO-SOUDCE VOLTAGE (VOLTS) VDS, DDAIN-TO-SOUDCE VOLTAGE (VOLTS) Figure 1. Transfer Characteristics Figure 2. On–Region Characteristics 9 10 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU BSS84LT1 FM1200-M+ mAmps, 50 Volts 130BARRIER Power 1.0A SURFACEMOSFET MOUNT SCHOTTKY RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features power dissipation offers • Batch process design, excellentTYPICAL ELECTRICAL CHARACTERISTICS better reverse leakage current and thermal resistance. SOD-123H D DS(on) , DDAIN-TO-SOUDCE DESISTANCE (OHMS) optimize board space. 9 • Low power loss, VGS =high 4.5 Vefficiency. capability, low forward voltage drop. • High current 8 • High surge capability. • Guardring 7 for overvoltage protection. • Ultra high-speed switching. 6 planar chip, metal silicon junction. • Silicon epitaxial • Lead-free parts meet environmental standards of • 150°C 25°C MIL-STD-19500 /228 5 RoHS product for packing code suffix "G" Halogen 4free product for packing code suffix "H" Mechanical data -55°C 3 • Epoxy : UL94-V0 rated flame retardant 2 plastic, SOD-123H • Case : Molded 0 0.1 0.2 0.3 0.4 0.5 , • Terminals :Plated terminals, solderable per MIL-STD-750 I , DDAIN CUDDENT (AMPS) Method 2026 0.6 D DS(on) , DDAIN-TO-SOUDCE DESISTANCE (OHMS) • Low profile surface mounted application in order to 7 0.012(0.3) Typ. 6 5.5 0.071(1.8) 0.056(1.4) 5 4.5 4 25°C 3.5 3 -55°C 0.040(1.0) 0.024(0.6) 2.5 2 0.1 0 0.031(0.8) Typ. 0.3 0.2 0.031(0.8) Typ. 0.5 0.4 0.6 ID, DDAIN CUDDENT (AMPS) D Figure 4. On–Resistance versus Drain Current Figure 3. On–Resistance versus Drain Current • Polarity : Indicated by cathode band • Mounting Position : Any • Weight :2Approximated 0.011 gram Dimensions in inches and (millimeters) VGS, GATE-TO-SOUDCE VOLTAGE (VOLTS) DDS(on) , DDAIN-TO-SOUDCE DESISTANCE (NODMALIZED) 150°C 0.146(3.7) 0.130(3.3) VGS = 10 V 6.5 8 VDS = 40 V 7 TJ = 25°C VGS = 10 V MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS ID = 0.52 A 6 Ratings at 25℃ 1.6 ambient temperature unless otherwise specified. 1.8 Single phase half wave, 60Hz, resistive of inductive load. 1.4 derate current by 20% For capacitive load, Marking Code 1.2 RATINGS Maximum Recurrent1 Peak Reverse Voltage 5 VGS = 4.5 V 4 FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT SYMBOL FM120-MH ID = 0.13 A 12 20 VRRM 13 30 Maximum RMS Voltage VRMS 14 21 Maximum DC Blocking Voltage VDC 20 30 0.8 IO 95 Peak Forward Surge Current 8.3 ms single half sine-wave TJ, JUNCTION TEMPEDATUDE (°C) IFSM 0.6Forward Rectified Current Maximum Average -ā55 -5 45 145 14 3 40 2 28 15 50 35 42 56 70 40 1 50 60 80 100 0 16 60 Typical Junction Capacitance (Note 1) Operating Temperature Range I D , DIODE CUDDENT (AMPS) CHARACTERISTICS NOTES: 105 140 150 200 Volts 2000 Amps Amps ℃/W PF ℃ - 65 to +175 ℃ TJ FM120-MH = 150°C FM130-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT 25°C FM140-MH -55°C SYMBOL 0.1 VF Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage Volts Volts -55 to +150 TSTG Maximum Forward Voltage at 1.0A DC -55 to +125 TJ Storage Temperature Range 40 120 CJ 1 120 200 Figure 6. Gate Charge Figure 5. On–Resistance Variation with Temperature RΘJA 115 150 1.0 500 1500 1000 Q30 , TOTAL GATE CHADGE (pC) T 0 superimposed on rated load (JEDEC method) Typical Thermal Resistance (Note 2) 18 ID = 0.5 A10 80 100 0.50 0.70 IR @T A=125℃ 0.85 0.5 10 0.9 0.92 Volts mAmps 0.01 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 0.001 0 0.5 1.0 1.5 2.0 2.5 3.0 VSD, DIODE FODWAD VOLTAGE (VOLTS) Figure 7. Body Diode Forward Voltage 2012-06 2012-10 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU BSS84LT1 FM1200-M+ mAmps, 50 Volts 130BARRIER Power 1.0A SURFACEMOSFET MOUNT SCHOTTKY RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. SOD-123H SOT-23 .063(1.60) .047(1.20) MIL-STD-19500 /228 0.146(3.7) 0.130(3.3) .006(0.15)MIN. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. .122(3.10) • Silicon epitaxial planar chip, metal silicon junction. .106(2.70) of • Lead-free parts meet environmental standards 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) • RoHS product for packing code suffix "G" .110(2.80) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any .080(2.04) • Weight : Approximated 0.011 gram .086(2.10) Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Dimensions in inches and (millimeters) .008(0.20) .003(0.08) .070(1.78) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS Marking Code SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Volts Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Volts Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Volts Maximum Average Forward Rectified Current IO .020(0.50) IFSM .012(0.30) .004(0.10)MAX. Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) .055(1.40) .035(0.89) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% 1.0 30 Dimensions in inches and (millimeters) -55 to +125 CJ Typical Junction Capacitance (Note 1) TJ Operating Temperature Range Storage Temperature Range 40 120 Amps Amps ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF 0.037 0.95 IR 0.50 0.037 0.950.70 0.85 0.5 10 0.9 0.92 Volts mAmps NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 0.079 2.0 2- Thermal Resistance From Junction to Ambient 0.035 0.9 0.031 0.8 2012-06 2012-10 inches mm WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.