UNISONIC TECHNOLOGIES CO., LTD ISL9V3040D3S

UNISONIC TECHNOLOGIES CO., LTD
ISL9V3040D3S
Insulated Gate Bipolar Transistor
300mJ, 400V, N-CHANNEL
IGNITION IGBT

DESCRIPTION
The UTC ISL9V3040D3S is an N-channel ignition Insulated
Gate Bipolar Transistor. It uses UTC’s advanced technology to
provide customers with outstanding SCIS capability.
The UTC ISL9V3040D3S is suitable for Coil –On plug
applications and Automotive Ignition Coil driver circuits, etc.

FEATURES
* Outstanding SCIS capability
* Logic level gate drive

SYMBOL

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
ISL9V3040D3SL-TA3-T
ISL9V3040D3SG-TA3-T
ISL9V3040D3SL-TF3-T
ISL9V3040D3SG-TF3-T
ISL9V3040D3SL-TN3-R
ISL9V3040D3SG-TN3-R
ISL9V3040D3SL-TQ2-T
ISL9V3040D3SG-TQ2-T
ISL9V3040D3SL-TQ2-R
ISL9V3040D3SG-TQ2-R
Note: Pin Assignment: G: Gate
C: Collector
E: Emitter
ISL9V3040D3SL-TA3-T
(1)Packing Type
(2)Package Type
(3)Green Package

Package
TO-220
TO-220F
TO-252
TO-263
TO-263
Pin Assignment
1
2
3
G
C
E
G
C
E
G
C
E
G
C
E
G
C
E
Packing
Tube
Tube
Tape Reel
Tube
Tape Reel
(1) T: Tube, R: Tape Reel
(2) TA3: TO-220, TF3: TO-220F, TN3: TO-252
TQ2: TO-263
(3) L: Lead Free, G: Halogen Free and Lead Free
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 4
QW-R219-011.F
ISL9V3040D3S

Insulated Gate Bipolar Transistor
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector to Emitter Breakdown Voltage
BVCER
450
V
Emitter to Collector Voltage Reverse Battery Condition
BVECS
30
V
TJ=25°C, ISCIS=14.2A, L=3.0mHy
300
mJ
ESCIS
At Starting
TJ= 150°C, ISCIS=10.6A, L=3.0mHy
170
mJ
TC=25°C
21
A
IC
Continuous Collector Current
TC=110°C
17
A
Gate to Emitter Voltage Continuous
VGEM
±10
V
TO-220/TO-263
125
Power Dissipation Total at TC=25°C
W
TO-220F
41.6
TO-252
125
PD
TO-220/TO-263
1
Power Dissipation Derating TC>25°C
W/°C
TO-220F
0.332
TO-252
1
Electrostatic Discharge Voltage at 100pF, 1500Ω
ESD
4
kV
Junction Temperature
TJ
-40~175
°C
Storage Temperature Range
TSTG
-40~175
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL CHARACTERISTICS
PARAMETER
Junction to Case
SYMBOL
TO-220/TO-252
TO-263
TO-220F
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
θJC
RATINGS
1.0
UNIT
°C/W
3.0
2 of 4
QW-R219-011.F
ISL9V3040D3S

Insulated Gate Bipolar Transistor
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise noted)
PARAMETER
Off State Characteristics
SYMBOL
Collector to Emitter Breakdown Voltage
BVCER
Collector to Emitter to Breakdown Voltage
BVCES
Emitter to Collector Breakdown Voltage
Gate to Emitter Breakdown Voltage
BVECS
BVGES
Collector to Emitter Leakage Current
ICER
Emitter to Collector Leakage Current
IECS
Series Gate Resistance
Gate to Emitter Resistance
On State Characteristics
R1
R2
Collector to Emitter Saturation Voltage
Dynamic Characteristics
Gate Charge
Gate to Emitter Threshold Voltage
Gate to Emitter Plateau Voltage
Switching Characteristics
Current Turn-On Delay Time-Resistive
Current Rise Time-Resistive
Current Turn-Off Delay Time-Inductive
Current Fall Time Inductive
TEST CONDITIONS
IC=2mA, VGE=0V, RG=1KΩ,
TJ=-40~150°C
IC=10mA, VGE=0V, RG=0,
TJ=-40~150°C
IC=-75mA, VGE=0V, TC=25°C
IGES=±2mA
VCER=250V,
TC=25°C
RG=1KΩ
TC=150°C
TC=25°C
VEC=24V
TC=150°C
IC=6A, VGE=4V
TC=25°C
IC=10A, VGE=4.5V TC=150°C
IC=15A, VGE=4.5V TC=150°C
QG(ON)
VGE(TH)
VGEP
IC=10A, VCE=12V, VGE=5V
IC=1.0mA, VCE=VGE
IC=10A, VCE=12V
td(ON)R
trR
td(OFF)L
tfL
VCE=14V, RL=1Ω, VGE=5V,
RG=1KΩ, TJ=25°C
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
350
400
450
V
400
450
500
V
30
±12
±14
25
1
1
40
V
V
µA
mA
mA
mA
Ω
Ω
70
VCE(SAT)
SCIS
TYP MAX UNIT
10K
TJ= 25°C, L=3.0mHy, RG=1KΩ,
VGE=5V
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
Self Clamped Inductive Switching
MIN
26K
1.25 1.60
1.40 1.80
1.90 2.20
17
1.3
2.2
nC
V
V
4
7
15
15
μs
μs
μs
μs
300
mJ
3.0
0.48
2.1
1.4
2.2
V
V
V
3 of 4
QW-R219-011.F
ISL9V3040D3S

Insulated Gate Bipolar Transistor
TEST CIRCUIT AND WAVEFORMS
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 4
QW-R219-011.F