ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3
EcoSPARKTM 300mJ, 400V, N-Channel Ignition IGBT
General Description
Applications
The ISL9V3040D3S, ISL9V3040S3S, and ISL9V3040P3 are the
next generation ignition IGBTs that offer outstanding SCIS
capability in the space saving D-Pak (TO-252), as well as the
industry standard D²-Pak (TO-263), and TO-220 plastic packages.
This device is intended for use in automotive ignition circuits,
specifically as a coil driver. Internal diodes provide voltage clamping
without the need for external components.
• Automotive Ignition Coil Driver Circuits
• Coil- On Plug Applications
EcoSPARK™ devices can be custom made to specific clamp
voltages. Contact your nearest Fairchild sales office for more
information.
Features
• Space saving D-Pak package availability
• SCIS Energy = 300mJ at TJ = 25oC
• Logic Level Gate Drive
Formerly Developmental Type 49362
Package
Symbol
COLLECTOR
JEDEC TO-252AA
D-Pak
JEDEC TO-263AB
D²-Pak
JEDEC TO-220AB
R1
G
GATE
G
E
R2
E
COLLECTOR
(FLANGE)
EMITTER
COLLECTOR
(FLANGE)
Device Maximum Ratings TA = 25°C unless otherwise noted
Symbol
BVCER
Parameter
Collector to Emitter Breakdown Voltage (IC = 1 mA)
Ratings
430
Units
V
BVECS
Emitter to Collector Voltage - Reverse Battery Condition (IC = 10 mA)
24
V
ESCIS25
At Starting TJ = 25°C, ISCIS = 14.2A, L = 3.0 mHy
300
mJ
ESCIS150
mJ
At Starting TJ = 150°C, ISCIS = 10.6A, L = 3.0 mHy
170
IC25
Collector Current Continuous, At TC = 25°C, See Fig 9
21
A
IC110
Collector Current Continuous, At TC = 110°C, See Fig 9
17
A
VGEM
Gate to Emitter Voltage Continuous
±10
V
PD
Power Dissipation Total TC = 25°C
150
W
1.0
W/°C
Power Dissipation Derating TC > 25°C
TJ
TSTG
Operating Junction Temperature Range
-40 to 175
°C
Storage Junction Temperature Range
-40 to 175
°C
°C
Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s)
300
Tpkg
Max Lead Temp for Soldering (Package Body for 10s)
260
°C
ESD
Electrostatic Discharge Voltage at 100pF, 1500Ω
4
kV
TL
©2002 Fairchild Semiconductor Corporation
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 Rev. C, February 2002
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3
January 2002
Device Marking
V3040D
Device
ISL9V3040D3ST
Package
TO-252AA
Reel Size
330mm
Tape Width
16mm
Quantity
2500 units
800 units
V3040S
ISL9V3040S3ST
TO-263AB
330mm
24mm
V3040D
ISL9V3040D3S
TO-252AA
Tube
N/A
75 units
V3040S
ISL9V3040S3S
TO-263AB
Tube
N/A
50 units
V3040P
ISL9V3040P3
TO-220AB
Tube
N/A
50 units
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
BVCER
Collector to Emitter Breakdown Voltage IC = 2mA, VGE = 0,
RG = 1KΩ, See Fig. 15
TJ = -40 to 150°C
370
400
430
V
BVCES
Collector to Emitter Breakdown Voltage IC = 10mA, VGE = 0,
RG = 0, See Fig. 15
TJ = -40 to 150°C
390
420
450
V
BVECS
Emitter to Collector Breakdown Voltage IC = -75mA, VGE = 0V,
TC = 25°C
30
-
-
V
BVGES
Gate to Emitter Breakdown Voltage
IGES = ± 2mA
±12
±14
-
V
ICER
Collector to Emitter Leakage Current
VCER = 250V, TC = 25°C
RG = 1KΩ, See TC = 150°C
Fig. 11
-
-
25
µA
-
-
1
mA
TC = 25°C
-
-
1
mA
TC = 150°C
-
-
40
mA
-
70
-
Ω
10K
-
26K
Ω
Off State Characteristics
IECS
Emitter to Collector Leakage Current
R1
Series Gate Resistance
R2
Gate to Emitter Resistance
VEC = 24V,
See Fig. 11
On State Characteristics
VCE(SAT)
Collector to Emitter Saturation Voltage
IC = 6A,
VGE = 4V
TC = 25°C,
See Fig. 3
-
1.25
1.60
V
VCE(SAT)
Collector to Emitter Saturation Voltage
IC = 10A,
VGE = 4.5V
TC = 150°C,
See Fig. 4
-
1.58
1.80
V
VCE(SAT)
Collector to Emitter Saturation Voltage
IC = 15A,
VGE = 4.5V
TC = 150°C
-
1.90
2.20
V
-
17
-
nC
Dynamic Characteristics
QG(ON)
Gate Charge
IC = 10A, VCE = 12V,
VGE = 5V, See Fig. 14
VGE(TH)
Gate to Emitter Threshold Voltage
IC = 1.0mA,
VCE = VGE,
See Fig. 10
VGEP
Gate to Emitter Plateau Voltage
TC = 25°C
1.3
-
2.2
V
TC = 150°C
0.75
-
1.8
V
-
3.0
-
V
IC = 10A, VCE = 12V
Switching Characteristics
td(ON)R
trR
td(OFF)L
tfL
SCIS
Current Turn-On Delay Time-Resistive
Current Rise Time-Resistive
Current Turn-Off Delay Time-Inductive
Current Fall Time-Inductive
Self Clamped Inductive Switching
VCE = 14V, RL = 1Ω,
VGE = 5V, RG = 1KΩ
TJ = 25°C, See Fig. 12
-
0.7
4
µs
-
2.1
7
µs
VCE = 300V, L = 500µHy,
VGE = 5V, RG = 1KΩ
TJ = 25°C, See Fig. 12
-
4.8
15
µs
-
2.8
15
µs
TJ = 25°C, L = 3.0 mHy,
RG = 1KΩ, VGE = 5V, See
Fig. 1 & 2
-
-
300
mJ
TO-252, TO-263, TO-220
-
-
1.0
°C/W
Thermal Characteristics
RθJC
Thermal Resistance Junction-Case
©2002 Fairchild Semiconductor Corporation
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 Rev.C, February 2002
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3
Package Marking and Ordering Information
ISCIS, INDUCTIVE SWITCHING CURRENT (A)
ISCIS, INDUCTIVE SWITCHING CURRENT (A)
30
RG = 1kΩ, VGE = 5V,Vdd = 14V
25
20
15
TJ = 25°C
TJ = 150°C
10
5
SCIS Curves valid for Vclamp Voltages of <430V
0
30
RG = 1kΩ, V GE = 5V,Vdd = 14V
25
20
15
TJ = 25°C
10
TJ = 150°C
5
SCIS Curves valid for Vclamp Voltages of <430V
0
0
25
50
75
100
125
150
175
0
200
2
4
tCLP, TIME IN CLAMP (µS)
VGE = 3.7V
VGE = 4.0V
1.26
1.22
VGE = 4.5V
VGE = 5.0V
VGE = 8.0V
1.14
-75
-50
-25
0
25
50
75
100
125
150
1.8
ICE = 10A
1.7
VGE = 3.7V
VGE = 4.0V
1.6
1.5
1.4
VGE = 4.5V
VGE = 5.0V
1.3
VGE = 8.0V
1.2
175
-75
-50
-25
0
TJ, JUNCTION TEMPERATURE (°C)
50
75
100
125
150
175
Figure 4. Collector to Emitter On-State Voltage
vs Junction Temperature
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)
25
VGE = 8.0V
VGE = 5.0V
VGE = 4.5V
VGE = 4.0V
VGE = 3.7V
15
25
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. Collector to Emitter On-State Voltage vs
Junction Temperature
20
10
Figure 2. Self Clamped Inductive Switching
Current vs Inductance
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
1.30
1.18
8
L, INDUCTANCE (mHy)
Figure 1. Self Clamped Inductive Switching
Current vs Time in Clamp
ICE = 6A
6
10
5
TJ = - 40°C
25
VGE = 8.0V
VGE = 5.0V
20
VGE = 4.5V
VGE = 4.0V
VGE = 3.7V
15
10
5
TJ = 25°C
0
0
0
1.0
2.0
3.0
4.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. Collector to Emitter On-State Voltage vs
Collector Current
©2002 Fairchild Semiconductor Corporation
0
1.0
2.0
3.0
4.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 6. Collector to Emitter On-State Voltage
vs Collector Current
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 Rev.C, February 2002
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3
Typical Performance Curves (Continued)
VGE = 8.0V
VGE = 5.0V
20
VGE = 4.5V
VGE = 4.0V
VGE = 3.7V
15
10
5
TJ = 175°C
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)
25
0
25
DUTY CYCLE < 0.5%, V CE = 5V
PULSE DURATION = 250µs
20
15
TJ = 150°C
10
TJ = 25°C
5
TJ = -40°C
0
0
1.0
2.0
3.0
4.0
1.0
2.0
1.5
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
3.0
2.5
Figure 7. Collector to Emitter On-State Voltage vs
Collector Current
4.5
Figure 8. Transfer Characteristics
25
2.2
VCE = VGE
VGE = 4.0V
20
VTH, THRESHOLD VOLTAGE (V)
ICE, DC COLLECTOR CURRENT (A)
4.0
3.5
VGE, GATE TO EMITTER VOLTAGE (V)
15
10
5
ICE = 1mA
2.0
1.8
1.6
1.4
1.2
1.0
0
25
50
75
100
125
150
-50
175
-25
0
TC, CASE TEMPERATURE (°C)
25
50
75
100
125
150
175
TJ JUNCTION TEMPERATURE (°C)
Figure 9. DC Collector Current vs Case
Temperature
Figure 10. Threshold Voltage vs Junction
Temperature
12
10000
ICE = 6.5A, VGE = 5V, RG = 1KΩ
VECS = 24V
SWITCHING TIME (µS)
LEAKAGE CURRENT (µA)
Resistive tOFF
10
1000
100
10
VCES = 300V
Inductive tOFF
8
6
4
1
Resistive tON
VCES = 250V
2
0.1
-50
-25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 11. Leakage Current vs Junction
Temperature
©2002 Fairchild Semiconductor Corporation
175
25
50
75
100
125
150
175
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Switching Time vs Junction
Temperature
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 Rev.C, February 2002
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3
Typical Performance Curves (Continued)
1600
8
IG(REF) = 1mA, RL = 1.25Ω, TJ = 25°C
VGE, GATE TO EMITTER VOLTAGE (V)
C, CAPACITANCE (pF)
FREQUENCY = 1 MHz
1200
CIES
800
CRES
400
COES
0
7
6
5
VCE = 12V
4
3
2
VCE = 6V
1
0
0
5
10
15
20
0
25
4
8
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
12
16
20
24
28
32
QG, GATE CHARGE (nC)
Figure 13. Capacitance vs Collector to Emitter
Voltage
Figure 14. Gate Charge
430
BVCER, BREAKDOWN VOLTAGE (V)
ICER = 10mA
425
420
TJ = - 40°C
TJ = 175°C
415
TJ = 25°C
410
405
400
395
390
10
100
1000
2000
3000
RG, SERIES GATE RESISTANCE (kΩ)
ZthJC, NORMALIZED THERMAL RESPONSE
Figure 15. Breakdown Voltage vs Series Gate Resistance
100
0.5
0.2
0.1
-1
10
t1
0.05
PD
t2
0.02
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
0.01
SINGLE PULSE
10-2
10-5
10-4
10-3
10-2
10-1
100
T1, RECTANGULAR PULSE DURATION (s)
Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case
©2002 Fairchild Semiconductor Corporation
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 Rev.C, February 2002
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3
Typical Performance Curves (Continued)
L
VCE
R
or
L
C
PULSE
GEN
RG
G
LOAD
C
RG = 1KΩ
DUT
G
+
DUT
5V
E
VCE
E
Figure 17. Inductive Switching Test Circuit
Figure 18. tON and tOFF Switching Test Circuit
VCE
BVCES
tP
VCE
L
C
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGE
IAS
VDD
+
RG
G
VDD
DUT
-
E
tP
0V
IAS
0
0.01Ω
tAV
Figure 19. Unclamped Energy Test Circuit
©2002 Fairchild Semiconductor Corporation
Figure 20. Unclamped Energy Waveforms
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 Rev.C, February 2002
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3
Test Circuit and Waveforms
REV 25 May 2001
th
JUNCTION
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3
CTHERM1 th 6 2.5e -4
CTHERM2 6 5 2.5e -3
CTHERM3 5 4 1.6e -3
CTHERM4 4 3 1.3e -2
CTHERM5 3 2 6.1e -3
CTHERM6 2 tl 9.9e +2
RTHERM1 th 6 1.2e -1
RTHERM2 6 5 1.9e -1
RTHERM3 5 4 2.2e -1
RTHERM4 4 3 6.0e -2
RTHERM5 3 2 5.8e -2
RTHERM6 2 tl 1.6e -4
RTHERM1
6
rtherm.rtherm1 th 6 = 1.2e -1
rtherm.rtherm2 6 5 = 1.9e -1
rtherm.rtherm3 5 4 = 2.2e -1
rtherm.rtherm4 4 3 = 6.0e -2
rtherm.rtherm5 3 2 = 5.8e -2
rtherm.rtherm6 2 tl = 1.6e -4
}
CTHERM2
RTHERM2
SABER Thermal Model
SABER thermal model
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 = 2.5e -4
ctherm.ctherm2 6 5 = 2.5e -3
ctherm.ctherm3 5 4 = 1.6e -3
ctherm.ctherm4 4 3 = 1.3e -2
ctherm.ctherm5 3 2 =6.1e -3
ctherm.ctherm6 2 tl = 9.9e +2
CTHERM1
5
CTHERM3
RTHERM3
4
RTHERM4
CTHERM4
3
RTHERM5
CTHERM5
2
RTHERM6
CTHERM6
tl
©2002 Fairchild Semiconductor Corporation
CASE
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 Rev.C, February 2002
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3
SPICE Thermal Model
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET
VCX™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into
support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose
be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance
support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4