ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 EcoSPARKTM 300mJ, 400V, N-Channel Ignition IGBT General Description Formerly Developmental Type 49362 The ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3, and ISL9V3040S3 are the next generation ignition IGBTs that offer outstanding SCIS capability in the space saving D-Pak (TO-252), as well as the industry standard D²-Pak (TO-263), and TO-262 and TO220 plastic packages. This device is intended for use in automotive ignition circuits, specifically as a coil driver. Internal diodes provide voltage clamping without the need for external components. Applications • Automotive Ignition Coil Driver Circuits • Coil- On Plug Applications Features EcoSPARK™ devices can be custom made to specific clamp voltages. Contact your nearest Fairchild sales office for more information. • Space saving D-Pak package availability • SCIS Energy = 300mJ at TJ = 25oC • Logic Level Gate Drive Package Symbol JEDEC TO-263AB D²-Pak JEDEC TO-220AB E C G COLLECTOR G E R1 GATE JEDEC TO-252AA D-Pak JEDEC TO-262AA E R2 C G G EMITTER E COLLECTOR (FLANGE) Device Maximum Ratings TA = 25°C unless otherwise noted Symbol BVCER Parameter Collector to Emitter Breakdown Voltage (IC = 1 mA) Ratings 430 Units V BVECS Emitter to Collector Voltage - Reverse Battery Condition (IC = 10 mA) 24 V ESCIS25 At Starting TJ = 25°C, ISCIS = 14.2A, L = 3.0 mHy 300 mJ ESCIS150 At Starting TJ = 150°C, ISCIS = 10.6A, L = 3.0 mHy 170 mJ IC25 Collector Current Continuous, At TC = 25°C, See Fig 9 21 A IC110 Collector Current Continuous, At TC = 110°C, See Fig 9 17 A VGEM Gate to Emitter Voltage Continuous ±10 V Power Dissipation Total TC = 25°C 150 W Power Dissipation Derating TC > 25°C 1.0 W/°C PD TJ TSTG TL Operating Junction Temperature Range -40 to 175 °C Storage Junction Temperature Range -40 to 175 °C °C Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s) 300 Tpkg Max Lead Temp for Soldering (Package Body for 10s) 260 °C ESD Electrostatic Discharge Voltage at 100pF, 1500Ω 4 kV ©2003 Fairchild Semiconductor Corporation ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D2, April 2003 ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 April 2003 Device Marking V3040D Device ISL9V3040D3S Package TO-252AA Tape Width 16mm Quantity 2500 V3040S ISL9V3040S3S TO-263AB 24mm 800 V3040P ISL9V3040P3 TO-220AA - - V3040S ISL9V3040S3 TO-262AA - - Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off State Characteristics BVCER Collector to Emitter Breakdown Voltage IC = 2mA, VGE = 0, RG = 1KΩ, See Fig. 15 TJ = -40 to 150°C 370 400 430 V BVCES Collector to Emitter Breakdown Voltage IC = 10mA, VGE = 0, RG = 0, See Fig. 15 TJ = -40 to 150°C 390 420 450 V BVECS Emitter to Collector Breakdown Voltage IC = -75mA, VGE = 0V, TC = 25°C 30 - - V BVGES Gate to Emitter Breakdown Voltage IGES = ± 2mA ±12 ±14 - V Collector to Emitter Leakage Current VCER = 250V, TC = 25°C RG = 1KΩ, See T = 150°C C Fig. 11 - - 25 µA - - 1 mA - - 1 mA - - 40 mA - 70 - Ω 10K - 26K Ω ICER IECS Emitter to Collector Leakage Current R1 Series Gate Resistance R2 Gate to Emitter Resistance VEC = 24V, See TC = 25°C Fig. 11 TC = 150°C On State Characteristics VCE(SAT) Collector to Emitter Saturation Voltage IC = 6A, VGE = 4V TC = 25°C, See Fig. 3 - 1.25 1.60 V VCE(SAT) Collector to Emitter Saturation Voltage IC = 10A, VGE = 4.5V TC = 150°C, See Fig. 4 - 1.58 1.80 V VCE(SAT) Collector to Emitter Saturation Voltage IC = 15A, VGE = 4.5V TC = 150°C - 1.90 2.20 V - 17 - nC Dynamic Characteristics QG(ON) Gate Charge IC = 10A, VCE = 12V, VGE = 5V, See Fig. 14 VGE(TH) Gate to Emitter Threshold Voltage IC = 1.0mA, VCE = VGE, See Fig. 10 VGEP Gate to Emitter Plateau Voltage TC = 25°C 1.3 - 2.2 V TC = 150°C 0.75 - 1.8 V - 3.0 - V IC = 10A, VCE = 12V Switching Characteristics td(ON)R trR td(OFF)L tfL SCIS Current Turn-On Delay Time-Resistive Current Rise Time-Resistive Current Turn-Off Delay Time-Inductive Current Fall Time-Inductive Self Clamped Inductive Switching VCE = 14V, RL = 1Ω, VGE = 5V, RG = 1KΩ TJ = 25°C, See Fig. 12 - 0.7 4 µs - 2.1 7 µs VCE = 300V, L = 500µHy, VGE = 5V, RG = 1KΩ TJ = 25°C, See Fig. 12 - 4.8 15 µs - 2.8 15 µs TJ = 25°C, L = 3.0 mHy, RG = 1KΩ, VGE = 5V, See Fig. 1 & 2 - - 300 mJ TO-252,TO-263,TO-220,TO262 - - 1.0 °C/W Thermal Characteristics RθJC Thermal Resistance Junction-Case ©2003 Fairchild Semiconductor Corporation ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D2, April 2003 ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Package Marking and Ordering Information ISCIS, INDUCTIVE SWITCHING CURRENT (A) ISCIS, INDUCTIVE SWITCHING CURRENT (A) 30 RG = 1kΩ, VGE = 5V,Vdd = 14V 25 20 15 TJ = 25°C TJ = 150°C 10 5 SCIS Curves valid for Vclamp Voltages of <430V 0 30 RG = 1kΩ, VGE = 5V,Vdd = 14V 25 20 15 TJ = 25°C 10 TJ = 150°C 5 SCIS Curves valid for Vclamp Voltages of <430V 0 0 25 50 75 100 125 150 175 0 200 2 4 tCLP, TIME IN CLAMP (µS) VGE = 3.7V VGE = 4.0V 1.26 1.22 VGE = 4.5V VGE = 5.0V VGE = 8.0V 1.14 -75 -50 -25 0 25 50 75 100 125 150 1.8 ICE = 10A 1.7 VGE = 3.7V VGE = 4.0V 1.6 1.5 1.4 VGE = 4.5V VGE = 5.0V 1.3 VGE = 8.0V 1.2 175 -75 -50 -25 0 TJ, JUNCTION TEMPERATURE (°C) 50 75 100 125 150 175 Figure 4. Collector to Emitter On-State Voltage vs Junction Temperature ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) 25 VGE = 8.0V VGE = 5.0V VGE = 4.5V VGE = 4.0V VGE = 3.7V 15 25 TJ, JUNCTION TEMPERATURE (°C) Figure 3. Collector to Emitter On-State Voltage vs Junction Temperature 20 10 Figure 2. Self Clamped Inductive Switching Current vs Inductance VCE, COLLECTOR TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V) 1.30 1.18 8 L, INDUCTANCE (mHy) Figure 1. Self Clamped Inductive Switching Current vs Time in Clamp ICE = 6A 6 10 5 TJ = - 40°C 25 VGE = 8.0V VGE = 5.0V 20 VGE = 4.5V VGE = 4.0V VGE = 3.7V 15 10 5 TJ = 25°C 0 0 0 1.0 2.0 3.0 4.0 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 5. Collector to Emitter On-State Voltage vs Collector Current ©2003 Fairchild Semiconductor Corporation 0 1.0 2.0 3.0 4.0 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 6. Collector to Emitter On-State Voltage vs Collector Current ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D2, April 2003 ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Typical Performance Curves (Continued) VGE = 8.0V VGE = 5.0V 20 VGE = 4.5V VGE = 4.0V VGE = 3.7V 15 10 5 TJ = 175°C ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) 25 0 25 DUTY CYCLE < 0.5%, VCE = 5V PULSE DURATION = 250µs 20 15 TJ = 150°C 10 TJ = 25°C 5 TJ = -40°C 0 0 1.0 2.0 3.0 4.0 1.0 2.0 1.5 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 3.0 2.5 Figure 7. Collector to Emitter On-State Voltage vs Collector Current 4.5 Figure 8. Transfer Characteristics 25 2.2 VCE = VGE VGE = 4.0V 20 VTH, THRESHOLD VOLTAGE (V) ICE, DC COLLECTOR CURRENT (A) 4.0 3.5 VGE, GATE TO EMITTER VOLTAGE (V) 15 10 5 ICE = 1mA 2.0 1.8 1.6 1.4 1.2 1.0 0 25 50 75 100 125 150 -50 175 -25 0 TC, CASE TEMPERATURE (°C) 25 50 75 100 125 150 175 TJ JUNCTION TEMPERATURE (°C) Figure 9. DC Collector Current vs Case Temperature Figure 10. Threshold Voltage vs Junction Temperature 12 10000 ICE = 6.5A, VGE = 5V, RG = 1KΩ VECS = 24V SWITCHING TIME (µS) LEAKAGE CURRENT (µA) Resistive tOFF 10 1000 100 10 VCES = 300V Inductive tOFF 8 6 4 1 Resistive tON VCES = 250V 2 0.1 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 11. Leakage Current vs Junction Temperature ©2003 Fairchild Semiconductor Corporation 175 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (°C) Figure 12. Switching Time vs Junction Temperature ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D2, April 2003 ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Typical Performance Curves (Continued) 1600 8 IG(REF) = 1mA, RL = 1.25Ω, TJ = 25°C VGE, GATE TO EMITTER VOLTAGE (V) C, CAPACITANCE (pF) FREQUENCY = 1 MHz 1200 CIES 800 CRES 400 COES 0 7 6 5 VCE = 12V 4 3 2 VCE = 6V 1 0 0 5 10 15 20 0 25 4 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 8 12 16 20 24 28 32 QG, GATE CHARGE (nC) Figure 13. Capacitance vs Collector to Emitter Voltage Figure 14. Gate Charge 430 BVCER, BREAKDOWN VOLTAGE (V) ICER = 10mA 425 420 TJ = - 40°C TJ = 175°C 415 TJ = 25°C 410 405 400 395 390 10 100 1000 2000 3000 RG, SERIES GATE RESISTANCE (kΩ) ZthJC, NORMALIZED THERMAL RESPONSE Figure 15. Breakdown Voltage vs Series Gate Resistance 100 0.5 0.2 0.1 10-1 0.05 t1 0.02 PD 0.01 t2 -2 10 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZθJC X RθJC) + TC SINGLE PULSE 10-3 10-6 10-5 10-4 10-3 10-2 10-1 T1, RECTANGULAR PULSE DURATION (s) Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case ©2003 Fairchild Semiconductor Corporation ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D2, April 2003 ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Typical Performance Curves (Continued) L VCE R or L C PULSE GEN RG G LOAD C RG = 1KΩ DUT G + DUT 5V E VCE E Figure 17. Inductive Switching Test Circuit Figure 18. tON and tOFF Switching Test Circuit VCE BVCES tP VCE L C VARY tP TO OBTAIN REQUIRED PEAK IAS VGE IAS VDD + RG G VDD DUT - E tP 0V IAS 0 0.01Ω tAV Figure 19. Energy Test Circuit ©2003 Fairchild Semiconductor Corporation Figure 20. Energy Waveforms ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D2, April 2003 ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Test Circuit and Waveforms REV 7 March 2002 th JUNCTION ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 CTHERM1 th 6 2.1e -3 CTHERM2 6 5 1.4e -1 CTHERM3 5 4 7.3e -3 CTHERM4 4 3 2.1e -1 CTHERM5 3 2 1.1e -1 CTHERM6 2 tl 6.2e +6 RTHERM1 th 6 1.2e -1 RTHERM2 6 5 1.9e -1 RTHERM3 5 4 2.2e -1 RTHERM4 4 3 6.0e -2 RTHERM5 3 2 5.8e -2 RTHERM6 2 tl 1.6e -3 RTHERM1 6 rtherm.rtherm1 th 6 = 1.2e -1 rtherm.rtherm2 6 5 = 1.9e -1 rtherm.rtherm3 5 4 = 2.2e -1 rtherm.rtherm4 4 3 = 6.0e -2 rtherm.rtherm5 3 2 = 5.8e -2 rtherm.rtherm6 2 tl = 1.6e -3 } CTHERM2 RTHERM2 SABER Thermal Model SABER thermal model ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 template thermal_model th tl thermal_c th, tl { ctherm.ctherm1 th 6 = 2.1e -3 ctherm.ctherm2 6 5 = 1.4e -1 ctherm.ctherm3 5 4 = 7.3e -3 ctherm.ctherm4 4 3 = 2.2e -1 ctherm.ctherm5 3 2 =1.1e -1 ctherm.ctherm6 2 tl = 6.2e +6 CTHERM1 5 CTHERM3 RTHERM3 4 RTHERM4 CTHERM4 3 RTHERM5 CTHERM5 2 RTHERM6 CTHERM6 tl ©2003 Fairchild Semiconductor Corporation CASE ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D2, April 2003 ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 SPICE Thermal Model TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx FACT ActiveArray FACT Quiet Series Bottomless FASTâ CoolFET FASTr CROSSVOLT FRFET DOME GlobalOptoisolator EcoSPARK GTO E2CMOSTM HiSeC EnSignaTM I2C Across the board. Around the world. The Power Franchise Programmable Active Droop ImpliedDisconnect PACMAN POP ISOPLANAR Power247 LittleFET PowerTrenchâ MicroFET QFET MicroPak QS MICROWIRE QT Optoelectronics MSX Quiet Series MSXPro RapidConfigure OCX RapidConnect OCXPro SILENT SWITCHERâ OPTOLOGICâ SMART START OPTOPLANAR SPM Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogicâ TruTranslation UHC UltraFETâ VCX DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I2