UNISONIC TECHNOLOGIES CO., LTD 2SC5200

UNISONIC TECHNOLOGIES CO., LTD
2SC5200
NPN EPITAXIAL SILICON TRANSISTOR
POWER AMPLIFIER
APPLICATIONS

FEATURES
* Recommended for 100W High Fidelity Audio Frequency
Amplifier Output Stage.
* Complementary to UTC 2SA1943

ORDERING INFORMATION
Order Number
Lead Free
2SC5200-x-T3L-T
Halogen Free
2SC5200-x-T3L-T
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
Package
TO-3PL
Pin Assignment
1
2
3
B
C
E
Packing
Tube
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
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TC=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
230
V
Collector-Emitter Voltage
VCEO
230
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
15
A
Base Current
IB
1.5
A
Collector Power Dissipation (TC=25°C)
PC
150
W
Junction Temperature
TJ
150
°C
Storage Temperature Range
TSTG
-55 ~ 150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (TC=25°C)
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
Base -Emitter Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Transition Frequency
Collector Output Capacitance

SYMBOL
V(BR) CEO
VCE(SAT)
VBE
ICBO
IEBO
hFE1
hFE2
fT
COB
TEST CONDITIONS
IC= 50mA, IB=0
IC= 8A, IB= 0.8A
VCE= 5V, IC= 7A
VCB = 230V, IE=0
VEB= 5V, IC=0
VCE= 5V, IC= 1A
VCE= 5V, IC= 7A
VCE= 5V, IC= 1A
VCB= 10V, IE=0, f=1MHz
MIN
230
55
35
TYP
MAX
0.4
1.0
3.0
1.5
5.0
5.0
160
60
30
200
UNIT
V
V
V
μA
μA
MHz
pF
CLASSIFICATION OF hFE1
RANK
Range
R
55 ~ 110
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
O
80 ~ 160
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Collector current, IC (A)
Collector Current, IC (A)
TYPICAL CHARACTERISTICS
DC Current Gain vs. Collector Current
300
3
DC Current Gain, hFE
Collector-Emitter Saturation
Voltage, VCE(sat) (V)
Collector-Emitter Saturation Voltage vs.
Collector Current
100
1
0.3
TC =100℃
0.1
-25
0.03
0.01
0.01
Collector current, IC (A)

NPN EPITAXIAL SILICON TRANSISTOR
25
COMMON EMITTER
IC / IB = 10
10
0.1
1
Collector Current, IC (A)
100
TC =100℃
25
-25
30
10
3
1
0.01
COMMON EMITTER
IC / IB = 10
10
0.1
1
Collector Current, IC (A)
100
Safe Operating Area
50 I MAX. (PULSED)
30 ICC MAX.
1ms
(CONTINUOUS)
10ms
10
100ms
DC OPERATION
5 TC =25°C
3
1
0.5
0.3
SINGLE NONREPETITIVE
PULSE TC = 25°C
CURVES MUST BE
DERATED LINEARLY
WITH INCREASE IN
TEMPERATURE.
0.1
0.05
0.03
3
VCEO
MAX.
300 1000
10
30
100
Collector-Emitter Voltage, VCE (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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NPN EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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