UTC 2SA1837 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS FEATURES * High Transition Frequency: fT=70MHZ (Typ.) * Complementary to UTC 2SC4793 1 TO-220F 1: BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS (Ta = 25℃) PARAMETER SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Ta=25℃ TC=25℃ VCBO VCEO VEBO IC IB Junction Temperature Storage Temperature Range TJ Tstg PC RATINGS -230 -230 -5 -1 -0.1 UNIT 2.0 20 150 -55 ~ 150 W V V V A A ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃) PARAMETER SYMBOL Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base -Emitter Voltage V(BR) CEO ICBO IEBO hFE VCE (sat) VBE Transition Frequency Collector Output Capacitance UTC fT Cob TEST CONDITIONS IC= -10mA, IB=0 VCB = -230V, IE=0 VEB= -5V, IC=0 VCE= -5V, IC= -100mA IC= -500mA, IB= -50mA MIN TYP -1.0 -1.0 320 -1.5 -1.0 100 VCE= -5V, IC= -500mA VCE= -10V, IC= -100mA VCB= -10V, IC=0, f=1MHz UNISONIC TECHNOLOGIES MAX -230 70 30 UNIT V μA μA V V MHz pF CO. LTD 1 QW-R219-002,A UTC 2SA1837 PNP EPITAXIAL SILICON TRANSISTOR TYPICAL CHARACTERISTICS fT - I C IC - VBE COMMON EMITTER 300 VCE= -10V TC =25℃ -1.0 COLLECTOR CURRENT, I C (A) TRANSITION FREQUENCY, f T (MHz) 500 100 50 30 10 -0.8 -0.6 -30 -10 -100 -300 25 T C =100℃ -25 -0.4 -0.2 0 -5 COMMON EMITTER VCE= -5V -1000 -0.2 0 -0.4 -0.6 -1.0 -0.8 -1.2 -1.4 -1 -3 BASE-EMITTER VOLTAGE, V BE (V) COLLECTOR CURRENT, I C (mA) hFE - I C VCE(sat) - I C COMMON EMITTER VCE= -5V 500 300 T C =100℃ 100 25 -25 50 30 10 -0.003 -0.01 -0.03 -0.1 -3 -1 -0.3 COLLECTOR-EMITTER SATURATION VOLTAGE, V CE (sat) (V) DC CURRENT GAIN, h FE 1000 -3 COMMON EMITTER -1 IC/IB= 10 -0.5 -0.3 T C =100℃ -0.1 -0.05 -0.03 25 -25 -0.01 -0.003 -0.01 COLLECTOR CURRENT I C (mA) IC - VCE -10 -3 -8 COLLECTOR CURRENT, I C (A) COLLECTOR CURRENT, I C (A) -0.8 -6 -0.6 -4 -0.4 IB = -2mA -0.2 -1 COMMON EMITTER T C =25℃ -6 -8 COLLECTOR-EMITTER VOLTAGE, V CE (V) UTC -10 IC MAX. (PULSED)※ 1ms※ IC MAX. (CONTINUOUS) 10ms※ 100ms※ -0.5 DC OPERATION -0.3 -0.1 -0.05 -0.03 -4 -0.3 -5 -20 -2 -0.1 SAFE OPERATING AREA -1.0 0 0 -0.03 COLLECTOR CURRENT, I C (A) -0.01 ※SINGLE NONREPETITIVE PULSE TC =25℃ CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE. -1 -3 -10 -30 -100 -300 COLLECTOR-EMITTER VOLTAGE, V CE (V) UNISONIC TECHNOLOGIES CO. LTD 2 QW-R219-002,A UTC 2SA1837 PNP EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO. LTD 3 QW-R219-002,A