UTC-IC 2SA1837

UTC 2SA1837
PNP EPITAXIAL SILICON TRANSISTOR
POWER AMPLIFIER
APPLICATIONS DRIVER STAGE
AMPLIFIER APPLICATIONS
FEATURES
* High Transition Frequency: fT=70MHZ (Typ.)
* Complementary to UTC 2SC4793
1
TO-220F
1: BASE
2: COLLECTOR
3: EMITTER
ABSOLUTE MAXIMUM RATINGS (Ta = 25℃)
PARAMETER
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Ta=25℃
TC=25℃
VCBO
VCEO
VEBO
IC
IB
Junction Temperature
Storage Temperature Range
TJ
Tstg
PC
RATINGS
-230
-230
-5
-1
-0.1
UNIT
2.0
20
150
-55 ~ 150
W
V
V
V
A
A
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃)
PARAMETER
SYMBOL
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base -Emitter Voltage
V(BR) CEO
ICBO
IEBO
hFE
VCE (sat)
VBE
Transition Frequency
Collector Output Capacitance
UTC
fT
Cob
TEST CONDITIONS
IC= -10mA, IB=0
VCB = -230V, IE=0
VEB= -5V, IC=0
VCE= -5V, IC= -100mA
IC= -500mA, IB= -50mA
MIN
TYP
-1.0
-1.0
320
-1.5
-1.0
100
VCE= -5V, IC= -500mA
VCE= -10V, IC= -100mA
VCB= -10V, IC=0, f=1MHz
UNISONIC TECHNOLOGIES
MAX
-230
70
30
UNIT
V
μA
μA
V
V
MHz
pF
CO. LTD
1
QW-R219-002,A
UTC 2SA1837
PNP EPITAXIAL SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
fT - I C
IC - VBE
COMMON
EMITTER
300
VCE= -10V
TC =25℃
-1.0
COLLECTOR CURRENT, I C (A)
TRANSITION FREQUENCY, f T (MHz)
500
100
50
30
10
-0.8
-0.6
-30
-10
-100
-300
25
T C =100℃
-25
-0.4
-0.2
0
-5
COMMON
EMITTER
VCE= -5V
-1000
-0.2
0
-0.4
-0.6
-1.0
-0.8
-1.2
-1.4
-1
-3
BASE-EMITTER VOLTAGE, V BE (V)
COLLECTOR CURRENT, I C (mA)
hFE - I C
VCE(sat) - I C
COMMON
EMITTER
VCE= -5V
500
300
T C =100℃
100
25
-25
50
30
10
-0.003
-0.01
-0.03
-0.1
-3
-1
-0.3
COLLECTOR-EMITTER SATURATION
VOLTAGE, V CE (sat) (V)
DC CURRENT GAIN, h FE
1000
-3
COMMON
EMITTER
-1 IC/IB= 10
-0.5
-0.3
T C =100℃
-0.1
-0.05
-0.03
25
-25
-0.01
-0.003
-0.01
COLLECTOR CURRENT I C (mA)
IC - VCE
-10
-3
-8
COLLECTOR CURRENT, I C (A)
COLLECTOR CURRENT, I C (A)
-0.8
-6
-0.6
-4
-0.4
IB = -2mA
-0.2
-1
COMMON
EMITTER
T C =25℃
-6
-8
COLLECTOR-EMITTER VOLTAGE, V CE (V)
UTC
-10
IC MAX. (PULSED)※
1ms※
IC MAX.
(CONTINUOUS)
10ms※
100ms※
-0.5
DC OPERATION
-0.3
-0.1
-0.05
-0.03
-4
-0.3
-5
-20
-2
-0.1
SAFE OPERATING AREA
-1.0
0
0
-0.03
COLLECTOR CURRENT, I C (A)
-0.01
※SINGLE NONREPETITIVE
PULSE TC =25℃
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE.
-1
-3
-10
-30
-100
-300
COLLECTOR-EMITTER VOLTAGE, V CE (V)
UNISONIC TECHNOLOGIES
CO. LTD
2
QW-R219-002,A
UTC 2SA1837
PNP EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UTC
UNISONIC TECHNOLOGIES
CO. LTD
3
QW-R219-002,A