Phototransistors PNA1401LF, PNZ102F Silicon NPN Phototransistors Unit : mm PNA1401LF ø4.6±0.15 4.5±0.2 For optical control systems Glass window Features 12.7 min. Flat window design which is suited to optical systems Low dark current : ICEO = 5 nA (typ.) Fast response : tr, tf = 3 µs (typ.) 2-ø0.45±0.05 Wide directional sensitivity 2.54±0.25 0 0± 1. Base pin for easy circuit design (PNZ102F) 1. 0± 0 3˚ 45± .1 5 .2 2 1 Absolute Maximum Ratings (Ta = 25˚C) 1: Emitter 2: Collector ø5.75 max. Unit Collector to emitter voltage VCEO 30 V Collector to base voltage VCBO* 40 V Emitter to collector voltage VECO 5 V Emitter to base voltage VEBO* 5 V Collector current IC 50 mA Collector power dissipation PC 150 mW Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg –30 to +100 ˚C Unit : mm PNZ102F ø4.6±0.15 Glass window 4.5±0.2 Ratings 3-ø0.45±0.05 PNZ102F only 2.54±0.25 3˚ 0± 0. 1 45± 5 .2 0 0± 1. 1. * Symbol 12.7 min. Parameter 3 2 1 ø5.75 max. 1: Emitter 2: Base 3: Collector 1 PNA1401LF, PNZ102F Phototransistors Electro-Optical Characteristics (Ta = 25˚C) Parameter Symbol Conditions min typ max 5 300 0.1 0.3 Dark current ICEO VCE = 10V Collector photo current ICE(L) VCE = 10V, L = 100 lx*1 Unit nA mA Peak sensitivity wave length λP VCE = 10V 800 nm Acceptance half angle θ Measured from the optical axis to the half power point 40 deg. tr, tf*2 VCC = 10V, ICE(L) = 5mA, RL = 100Ω 3 µs Response time Collector saturation voltage L = 500 lx*1 VCE(sat) PNA1401LF ICE(L) = 0.1mA 0.2 PNZ102F ICE(L) = 0.1mA *1 Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. *2 Switching time measurement circuit VCC (Input pulse) Sig.OUT (Output pulse) RL ,,,, ,, td tr PC — Ta ICE(L) — VCE ICE(L) (mA) 2.0 160 120 Collector photo current PC (mW) 200 Collector power dissipation tf 80 40 ICE(L) — L 10 900 lx 800 lx 700 lx 1000 lx 600 lx 1.6 500 lx 400 lx 1.2 300 lx 0.8 200 lx 100 lx 0.4 V td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) ICE(L) (mA) 50Ω 90% 10% Collector photo current Sig.IN 0.4 VCE = 10V Ta = 25˚C T = 2856K 1 10 –1 10 –2 L = 50 lx 0 – 20 0 20 40 60 80 Ambient temperature Ta (˚C ) 2 100 0 0 8 16 24 32 Collector to emitter voltage VCE (V) 10 –3 1 10 10 2 Illuminance L (lx) 10 3 Phototransistors PNA1401LF, PNZ102F ICEO — Ta ICE(L) — Ta 10 Collector photo current 10 1 40 Ambient temperature 80 I = 500 lx 1 100 lx 10 –1 10 –2 – 40 120 Ta (˚C ) 10˚ 50 40 30 20 40 80 0 200 120 40˚ 400 600 800 1000 1200 Wavelength λ (nm) Ta (˚C ) tf — ICE(L) VCC = 10V Ta = 25˚C VCC = 10V Ta = 25˚C 10 3 10 2 tr (µs) 60 30˚ 10 2 RL = 1kΩ 500Ω 10 RL = 1kΩ 10 500Ω 50˚ 60˚ Rise time 70 40 10 3 S (%) 90 60 tr — ICE(L) 20˚ 100 80 0 Ambient temperature Directivity characteristics 0˚ 80 20 tf (µs) 0 Ta = 25˚C Fall time 10 –1 – 40 VCE = 10V T = 2856K S (%) 10 2 Spectral sensitivity characteristics 100 Relative sensitivity ICE(L) (mA) VCE = 10V Relative sensitivity Dark current ICEO (nA) 10 3 100Ω 1 100Ω 1 70˚ 80˚ 10 –1 10 –1 90˚ 10 –2 10 –2 10 –1 1 Collector photo current 10 10 2 ICE(L) (mA) 10 –2 10 –2 10 –1 1 Collector photo current 10 10 2 ICE(L) (mA) 3