FMS2302

Formosa MS
SMD MOSFET
FMS2302
List
List................................................................................................. 1
Package outline............................................................................... 2
Features.......................................................................................... 2
Mechanical data............................................................................... 2
Maximum ratings ............................................................................. 2, 3
Rating and characteristic curves........................................................ 4, 5
Pinning information........................................................................... 6
Marking........................................................................................... 6
Suggested solder pad layout............................................................. 6
Packing information.......................................................................... 7
Reel packing.................................................................................... 8
Suggested thermal profiles for soldering processes............................. 8
High reliability test capabilities...........................................................9
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Page 1
Document ID
Issued Date
DS-231130
2009/02/10
Revised Date
-
Revision
A
Page.
9
Formosa MS
SMD MOSFET
FMS2302
Package outline
20V N-Channel Enhancement
Mode Power MOSFET
SOT-23
(B)
0.012 (0.30)
.084(2.10)
.068(1.70)
0.120 (3.04)
(C)
(A)
0.063 (1.60)
0.027 (0.67)
0.013 (0.32)
0.047 (1.20)
0.108 (2.75)
Mechanical data
R 0.05
(0.002)
0.051 (1.30)
• Epoxy:UL94-V0 rated flame retardant
• Case : Molded plastic, SOT-23
• Terminals : Solder plated, solderable per
0.003 (0.09)
0.083 (2.10)
0.007 (0.18)
•
•
•
•
•
0.110 (2.80)
DS(ON)
R DS(ON) <90mÙ@V GS =4.5V.
Rugged and reliable.
Capable of 2.5V gate drive.
Simple drive requirement.
Suffix "-H" indicates Halogen-free part, ex.FMS2302-H.
In compliance with EU RoHS 2002/95/EC directives.
0.020 (0.50)
• Super high dense cell design for low R
0.034 (0.85)
0.045 (1.15)
Features
0.034 (0.89)
MIL-STD-750, Method 2026
Dimensions in inches and (millimeters)
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.008 gram
M aximum ratings (AT T =25 C unless otherwise noted)
o
A
PARAMETER
CONDITIONS
Drain-source voltage
Drain current-continue
MIN.
TYP.
MAX.
UNIT
20
V
V DSS
V [email protected](T A = 25OC)
V [email protected](T A = 70OC)
-pulsed
Gate- source voltage-continue
Total power dissipation (Derate above 25OC)
Junction to ambient thermal resistance
3.2
ID
2.6
I DM
10
V GS
±12
PD
1.38
Storage temperature
Page 2
A
V
W
o
90
R èJA
Operation junction temperature
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Symbol
C/W
TJ
-55
+150
o
T STG
-65
+175
o
Document ID
Issued Date
DS-231130
2009/02/10
Revised Date
-
Revision
A
C
C
Page.
9
Formosa MS
SMD MOSFET
FMS2302
Electrical characteristics (At T =25 C unless otherwise noted)
o
A
PARAMETER
CONDITIONS
Symbol
MIN.
V GS = 0V, I D = 250uA
BV DSS
20
TYP.
MAX.
UNIT
OFF CHARACTERISTICS
Drain-source breakdown voltage
V
V DS = 20V, V GS = 0V, T J = 25 OC
V DS = 20V, V GS = 0V, T J = 70 OC
I DSS
Gate-body leakage current-forward
V GS = 12V, V DS =0
I GSSF
100
nA
Gate-body leakage current-reverse
V GS = -12V, V DS =0
I GSSR
-100
nA
1.2
V
85
115
mÙ
IS
1
A
I SM
10
A
Zero gate voltage drain current
1.0
µA
10
ON CHARACTERISTICS (Note 1)
Gate threshold voltage
V DS = V GS , I D = 250µA
V GS(th)
Static drain-source on-resistance
V GS = 4.5V, I D = 3.6A
V GS = 2.5V, I D = 3.1A
R DS(ON)
Source-drain current
V D =V G =0V , V S = 1.2V*
Source-drain current (pulse), Note 2
Forward transconductance, Note 1
Forward on voltage, Note 1
V DS =5V, ID = 3.6A*
0.5
g FS
O
V GS =0V, IS = 1.6A, TJ =25 C,
sec
6
V SD
V
1.2
DYNAMIC CHARACTERISTICS
Intput capacitance
Output capacitance
V DS = 10V, V GS = 0V,
f=1.0MHz
Reverse transfer capacitance
Total gate charge
Gate-source charge
V DS = 10V, I D = 3.6A
V GS =4.5V
Gate-drain charge
C ISS
145
C OSS
100
C RSS
50
QG
4.4
Q GS
0.6
Q GD
1.9
T D(ON)
5.2
pF
nC
Turn-On Delay Time
V DS = 10V,RD =2.8Ù, R G =6Ù
I D =3.6A, VGS =5V
TR
37
T D(OFF)
15
TF
5.7
ns
Turn-Off Delay Time
Note 1. Pulse duration >= 300µs, duty cycle 2.0%
2. Pulse width limited by Max. junction temperature
3. Surface mounted on 1 inch square copper pad of FR4 board; 270°C/W when mounted on min. copper pad.
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Page 3
Document ID
Issued Date
DS-231130
2009/02/10
Revised Date
-
Revision
A
Page.
9
Rating and characteristic curves (FMS2302)
FIG.2 NORMALIZD ON-RESISTANCE
10
1.8
T A = 25 O C
4.5V
8
3.0V
6
1.4
2.5V
4
V G=2V
2
I D = 3.6A
V G = 4.5V
1.6
3.5V
NORMALIZED RDS(on)
ID, DRAIN TO SOURCE CURRENT,(A)
FIG.1 TYPICAL OUTPUT CHARACTERISTIC
0
1.2
1.0
0.8
0.6
0
0.5
1.0
1.5
2.0
2.5
-50
V DS, DRAIN TO SOURCE VOLTAGE, (V)
0
50
100
150
T J, JUNCTION TEMPERATURE
FIG.4 FORWARD CHARACTERISTICS OF
REVERSE DIODE
FIG.3 ON RESISTANCE VS GATE VOLTAGE
100
10.0
T J =150 OC
I D=3.1A
T A=25 OC
IF(A)
RDS(on) (mÙ)
90
80
1.0
T J =25 OC
70
60
0
3
2
4
5
0
V GS, GATE TO SOURCE VOLTAGE, (V)
0.5
0.9
1.3
V DS, SOURCE TO DRAIN VOLTAGE(V)
FIG.5 GATE THRESHOLD VOLTAGE VS
JUNCTION TEMPERATURE
VGS(th)(V)
1.4
1.0
0.6
0.2
-50
0
50
100
150
O
T J, JUNCTION TEMPERATURE ( C)
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Page 4
Document ID
Issued Date
DS-231130
2009/02/10
Revised Date
-
Revision
A
Page.
9
Rating and characteristic curves (FMS2302)
FIG.7 GATE CHARGE
VGS, GATE TO SOURCE VOLTAGE,(V)
FIG.6 GATE CHARGE WAVEFORM
VG
QG
4.5V
Q GS
Q GD
12
10
V DS = 4.5V
I D = 3.6A
8
6
4
2
0
0
2
4
6
8
10
Q G, TOTAL GATE CHARGE, (nC)
Q
CHARGE
FIG.9 MAXIMUM SAFE OPERATION AREA
FIG.8 TYPICAL CAPACITANCE CHARACTERISTICS
f = 1.0MHz
1000
100
O
10
ID, (A)
C(pF)
Ciss
100
T A = 25 C
Single Pulse
Coss
1ms
1
10ms
0.1
Crss
100ms
Is
DC
0
0.01
1
3
5
7
9
11
13
0.1
1
10
100
V DS, DRAIN TO SOURCE VOLTAGE, (V)
FIG.10 EFFECTIVE TRANSIENT THERMAL IMPEDANCE
FIG.11 SWITCHING TIME CIRCUIT
NORMALIZED THERMAL RESPONSE(RèJA)
V DS, DRAIN TO SOURCE VOLTAGE, (V)
1
V DS
Duty factor = 0.5
0.2
90%
0.1
0.1
0.05
P DM
0.01
t
T
0.01
Single pulse
DUTY FACTOR = t / T
PEAK TJ = PDM X RèJu+Tu
O
R èJA = 270 C
10%
V GS
0.001
0.0001
1
1000
t d(on)
t, PULSE WIDTH (s)
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Page 5
tr
t d(off)
Document ID
Issued Date
DS-231130
2009/02/10
tf
Revised Date
-
Revision
A
Page.
9
Formosa MS
SMD MOSFET
FMS2302
Pinning information
Pin
Simplified outline
Symbol
D
PinD
PinG
PinS
Drain
Drain
Gate
Source
Gate
G
Source
S
Marking
Type number
Marking code
FMS2302
2302, N02
Suggested solder pad layout
SOT-23
0.037(0.95)
0.037(0.95)
0.079(2.0)
0.035(0.90)
0.031(0.80)
Dimensions in inches and (millimeters)
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TEL:886-2-22696661
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Page 6
Document ID
Issued Date
DS-231130
2009/02/10
Revised Date
-
Revision
A
Page.
9
Formosa MS
SMD MOSFET
FMS2302
Packing information
P0
P1
d
E
F
B
A
W
P
D2
D1
T
C
W1
D
unit:mm
Item
Symbol
Tolerance
SOT-23
Carrier width
Carrier length
Carrier depth
Sprocket hole
13" Reel outside diameter
13" Reel inner diameter
7" Reel outside diameter
7" Reel inner diameter
Feed hole diameter
Sprocket hole position
Punch hole position
Punch hole pitch
Sprocket hole pitch
Embossment center
Overall tape thickness
Tape width
Reel width
A
B
C
d
D
D1
D
D1
D2
E
F
P
P0
P1
T
W
W1
0.1
0.1
0.1
0.1
2.0
min
2.0
min
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.3
1.0
3.15
2.77
1.22
1.50
178.00
55.00
13.00
1.75
3.50
4.00
4.00
2.00
0.23
8.00
12.0
Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above.
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Page 7
Document ID
Issued Date
DS-231130
2009/02/10
Revised Date
-
Revision
A
Page.
9
Formosa MS
SMD MOSFET
FMS2302
Reel packing
PACKAGE
REEL SIZE
SOT-23
7"
REEL
(pcs)
COMPONENT
SPACING
(m/m)
BOX
(pcs)
INNER
BOX
(m/m)
REEL
DIA,
(m/m)
3,000
4.0
30,000
183*183*123
178
CARTON
SIZE
(m/m)
APPROX.
GROSS WEIGHT
(kg)
CARTON
(pcs)
382*262*387
11.6
240,000
Suggested thermal profiles for soldering processes
1.Storage environment: Temperature=10 oC~35 oC Humidity=65%±15%
2.Reflow soldering of surface-mount devices
Critical Zone
T L to T P
tP
TP
Ramp-up
TL
tL
Temperature
T smax
T smin
TS
ts
Preheat
25
Ramp-down
t25 oC to Peak
Wave Soldering
IR Reflow
Time
3.Flow (wave)soldering (solder dipping)
Profile Feature
Soldering Condition
Average ramp-up rate(T L to TP )
<3oC/sec
Preheat
-Temperature Min(Tsmin)
-Temperature Max(Tsmax)
-Time(min to max)(t s )
100oC
150oC
60~120sec
Tsmax to TL
-Ramp-upRate
<3oC/sec
Time maintained above:
-Temperature(TL )
-Time(tL )
183oC
60~150sec
255oC-0/+5 oC
Peak Temperature(T P )
Time within 5 oC of actual Peak
Temperature(tP )
10~30sec
Ramp-down Rate
<6 oC/sec
Time 25oC to Peak Temperature
<6minutes
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Page 8
Document ID
Issued Date
DS-231130
2009/02/10
Revised Date
-
Revision
A
Page.
9
Formosa MS
SMD MOSFET
FMS2302
High reliability test capabilities
Item Test
Conditions
Reference
O
1. Solder Resistance
2. Solderability
3. High Temperature Reverse Bias
4. Operation Life Test
at 260±5 C for 10±2sec.
immerse body into solder 1/16"±1/32"
MIL-STD-750D
METHOD-2031
at 245±5 OC for 5 sec.
MIL-STD-202F
METHOD-208
V DS =0.8 X BVDSS, V GS =0V at T A=150 OC for 168 hrs.
MIL-STD-883
Continuous operation at max rated T A=25 OC,
P C=P C(max) for 500hrs.
MIL-STD-883
15P SIG at TA=121 OC for 4 hrs.
5. Pressure Cooker
MIL-STD-750D
METHOD-1051
6. Temperature Cycling
-55 OC to +125OC dwelled for 30 min.
and transferred for 5min. total 10 cycles.
7. Thermal Shock
0 OC for 5 min. rise to 100 OC for 5 min. total 10 cycles.
8. Humidity
at TA=65 C, RH=98% for 1000hrs.
MIL-STD-750D
METHOD-1038
9. High Temperature Storage Life
at 175OC for 1000 hrs.
MIL-STD-750D
METHOD-1031
10. Solvent Resistance
Dip into Freon at 25OC for 1 min.
MIL-STD-202F
METHOD-215
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MIL-STD-750D
METHOD-1056
MIL-STD-750D
METHOD-4066-2
O
Page 9
Document ID
Issued Date
DS-231130
2009/02/10
Revised Date
-
Revision
A
Page.
9