Formosa MS SMD MOSFET FMS2302 List List................................................................................................. 1 Package outline............................................................................... 2 Features.......................................................................................... 2 Mechanical data............................................................................... 2 Maximum ratings ............................................................................. 2, 3 Rating and characteristic curves........................................................ 4, 5 Pinning information........................................................................... 6 Marking........................................................................................... 6 Suggested solder pad layout............................................................. 6 Packing information.......................................................................... 7 Reel packing.................................................................................... 8 Suggested thermal profiles for soldering processes............................. 8 High reliability test capabilities...........................................................9 http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 1 Document ID Issued Date DS-231130 2009/02/10 Revised Date - Revision A Page. 9 Formosa MS SMD MOSFET FMS2302 Package outline 20V N-Channel Enhancement Mode Power MOSFET SOT-23 (B) 0.012 (0.30) .084(2.10) .068(1.70) 0.120 (3.04) (C) (A) 0.063 (1.60) 0.027 (0.67) 0.013 (0.32) 0.047 (1.20) 0.108 (2.75) Mechanical data R 0.05 (0.002) 0.051 (1.30) • Epoxy:UL94-V0 rated flame retardant • Case : Molded plastic, SOT-23 • Terminals : Solder plated, solderable per 0.003 (0.09) 0.083 (2.10) 0.007 (0.18) • • • • • 0.110 (2.80) DS(ON) R DS(ON) <90mÙ@V GS =4.5V. Rugged and reliable. Capable of 2.5V gate drive. Simple drive requirement. Suffix "-H" indicates Halogen-free part, ex.FMS2302-H. In compliance with EU RoHS 2002/95/EC directives. 0.020 (0.50) • Super high dense cell design for low R 0.034 (0.85) 0.045 (1.15) Features 0.034 (0.89) MIL-STD-750, Method 2026 Dimensions in inches and (millimeters) • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.008 gram M aximum ratings (AT T =25 C unless otherwise noted) o A PARAMETER CONDITIONS Drain-source voltage Drain current-continue MIN. TYP. MAX. UNIT 20 V V DSS V [email protected](T A = 25OC) V [email protected](T A = 70OC) -pulsed Gate- source voltage-continue Total power dissipation (Derate above 25OC) Junction to ambient thermal resistance 3.2 ID 2.6 I DM 10 V GS ±12 PD 1.38 Storage temperature Page 2 A V W o 90 R èJA Operation junction temperature http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Symbol C/W TJ -55 +150 o T STG -65 +175 o Document ID Issued Date DS-231130 2009/02/10 Revised Date - Revision A C C Page. 9 Formosa MS SMD MOSFET FMS2302 Electrical characteristics (At T =25 C unless otherwise noted) o A PARAMETER CONDITIONS Symbol MIN. V GS = 0V, I D = 250uA BV DSS 20 TYP. MAX. UNIT OFF CHARACTERISTICS Drain-source breakdown voltage V V DS = 20V, V GS = 0V, T J = 25 OC V DS = 20V, V GS = 0V, T J = 70 OC I DSS Gate-body leakage current-forward V GS = 12V, V DS =0 I GSSF 100 nA Gate-body leakage current-reverse V GS = -12V, V DS =0 I GSSR -100 nA 1.2 V 85 115 mÙ IS 1 A I SM 10 A Zero gate voltage drain current 1.0 µA 10 ON CHARACTERISTICS (Note 1) Gate threshold voltage V DS = V GS , I D = 250µA V GS(th) Static drain-source on-resistance V GS = 4.5V, I D = 3.6A V GS = 2.5V, I D = 3.1A R DS(ON) Source-drain current V D =V G =0V , V S = 1.2V* Source-drain current (pulse), Note 2 Forward transconductance, Note 1 Forward on voltage, Note 1 V DS =5V, ID = 3.6A* 0.5 g FS O V GS =0V, IS = 1.6A, TJ =25 C, sec 6 V SD V 1.2 DYNAMIC CHARACTERISTICS Intput capacitance Output capacitance V DS = 10V, V GS = 0V, f=1.0MHz Reverse transfer capacitance Total gate charge Gate-source charge V DS = 10V, I D = 3.6A V GS =4.5V Gate-drain charge C ISS 145 C OSS 100 C RSS 50 QG 4.4 Q GS 0.6 Q GD 1.9 T D(ON) 5.2 pF nC Turn-On Delay Time V DS = 10V,RD =2.8Ù, R G =6Ù I D =3.6A, VGS =5V TR 37 T D(OFF) 15 TF 5.7 ns Turn-Off Delay Time Note 1. Pulse duration >= 300µs, duty cycle 2.0% 2. Pulse width limited by Max. junction temperature 3. Surface mounted on 1 inch square copper pad of FR4 board; 270°C/W when mounted on min. copper pad. http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 3 Document ID Issued Date DS-231130 2009/02/10 Revised Date - Revision A Page. 9 Rating and characteristic curves (FMS2302) FIG.2 NORMALIZD ON-RESISTANCE 10 1.8 T A = 25 O C 4.5V 8 3.0V 6 1.4 2.5V 4 V G=2V 2 I D = 3.6A V G = 4.5V 1.6 3.5V NORMALIZED RDS(on) ID, DRAIN TO SOURCE CURRENT,(A) FIG.1 TYPICAL OUTPUT CHARACTERISTIC 0 1.2 1.0 0.8 0.6 0 0.5 1.0 1.5 2.0 2.5 -50 V DS, DRAIN TO SOURCE VOLTAGE, (V) 0 50 100 150 T J, JUNCTION TEMPERATURE FIG.4 FORWARD CHARACTERISTICS OF REVERSE DIODE FIG.3 ON RESISTANCE VS GATE VOLTAGE 100 10.0 T J =150 OC I D=3.1A T A=25 OC IF(A) RDS(on) (mÙ) 90 80 1.0 T J =25 OC 70 60 0 3 2 4 5 0 V GS, GATE TO SOURCE VOLTAGE, (V) 0.5 0.9 1.3 V DS, SOURCE TO DRAIN VOLTAGE(V) FIG.5 GATE THRESHOLD VOLTAGE VS JUNCTION TEMPERATURE VGS(th)(V) 1.4 1.0 0.6 0.2 -50 0 50 100 150 O T J, JUNCTION TEMPERATURE ( C) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 4 Document ID Issued Date DS-231130 2009/02/10 Revised Date - Revision A Page. 9 Rating and characteristic curves (FMS2302) FIG.7 GATE CHARGE VGS, GATE TO SOURCE VOLTAGE,(V) FIG.6 GATE CHARGE WAVEFORM VG QG 4.5V Q GS Q GD 12 10 V DS = 4.5V I D = 3.6A 8 6 4 2 0 0 2 4 6 8 10 Q G, TOTAL GATE CHARGE, (nC) Q CHARGE FIG.9 MAXIMUM SAFE OPERATION AREA FIG.8 TYPICAL CAPACITANCE CHARACTERISTICS f = 1.0MHz 1000 100 O 10 ID, (A) C(pF) Ciss 100 T A = 25 C Single Pulse Coss 1ms 1 10ms 0.1 Crss 100ms Is DC 0 0.01 1 3 5 7 9 11 13 0.1 1 10 100 V DS, DRAIN TO SOURCE VOLTAGE, (V) FIG.10 EFFECTIVE TRANSIENT THERMAL IMPEDANCE FIG.11 SWITCHING TIME CIRCUIT NORMALIZED THERMAL RESPONSE(RèJA) V DS, DRAIN TO SOURCE VOLTAGE, (V) 1 V DS Duty factor = 0.5 0.2 90% 0.1 0.1 0.05 P DM 0.01 t T 0.01 Single pulse DUTY FACTOR = t / T PEAK TJ = PDM X RèJu+Tu O R èJA = 270 C 10% V GS 0.001 0.0001 1 1000 t d(on) t, PULSE WIDTH (s) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 5 tr t d(off) Document ID Issued Date DS-231130 2009/02/10 tf Revised Date - Revision A Page. 9 Formosa MS SMD MOSFET FMS2302 Pinning information Pin Simplified outline Symbol D PinD PinG PinS Drain Drain Gate Source Gate G Source S Marking Type number Marking code FMS2302 2302, N02 Suggested solder pad layout SOT-23 0.037(0.95) 0.037(0.95) 0.079(2.0) 0.035(0.90) 0.031(0.80) Dimensions in inches and (millimeters) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 6 Document ID Issued Date DS-231130 2009/02/10 Revised Date - Revision A Page. 9 Formosa MS SMD MOSFET FMS2302 Packing information P0 P1 d E F B A W P D2 D1 T C W1 D unit:mm Item Symbol Tolerance SOT-23 Carrier width Carrier length Carrier depth Sprocket hole 13" Reel outside diameter 13" Reel inner diameter 7" Reel outside diameter 7" Reel inner diameter Feed hole diameter Sprocket hole position Punch hole position Punch hole pitch Sprocket hole pitch Embossment center Overall tape thickness Tape width Reel width A B C d D D1 D D1 D2 E F P P0 P1 T W W1 0.1 0.1 0.1 0.1 2.0 min 2.0 min 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.3 1.0 3.15 2.77 1.22 1.50 178.00 55.00 13.00 1.75 3.50 4.00 4.00 2.00 0.23 8.00 12.0 Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above. http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 7 Document ID Issued Date DS-231130 2009/02/10 Revised Date - Revision A Page. 9 Formosa MS SMD MOSFET FMS2302 Reel packing PACKAGE REEL SIZE SOT-23 7" REEL (pcs) COMPONENT SPACING (m/m) BOX (pcs) INNER BOX (m/m) REEL DIA, (m/m) 3,000 4.0 30,000 183*183*123 178 CARTON SIZE (m/m) APPROX. GROSS WEIGHT (kg) CARTON (pcs) 382*262*387 11.6 240,000 Suggested thermal profiles for soldering processes 1.Storage environment: Temperature=10 oC~35 oC Humidity=65%±15% 2.Reflow soldering of surface-mount devices Critical Zone T L to T P tP TP Ramp-up TL tL Temperature T smax T smin TS ts Preheat 25 Ramp-down t25 oC to Peak Wave Soldering IR Reflow Time 3.Flow (wave)soldering (solder dipping) Profile Feature Soldering Condition Average ramp-up rate(T L to TP ) <3oC/sec Preheat -Temperature Min(Tsmin) -Temperature Max(Tsmax) -Time(min to max)(t s ) 100oC 150oC 60~120sec Tsmax to TL -Ramp-upRate <3oC/sec Time maintained above: -Temperature(TL ) -Time(tL ) 183oC 60~150sec 255oC-0/+5 oC Peak Temperature(T P ) Time within 5 oC of actual Peak Temperature(tP ) 10~30sec Ramp-down Rate <6 oC/sec Time 25oC to Peak Temperature <6minutes http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 8 Document ID Issued Date DS-231130 2009/02/10 Revised Date - Revision A Page. 9 Formosa MS SMD MOSFET FMS2302 High reliability test capabilities Item Test Conditions Reference O 1. Solder Resistance 2. Solderability 3. High Temperature Reverse Bias 4. Operation Life Test at 260±5 C for 10±2sec. immerse body into solder 1/16"±1/32" MIL-STD-750D METHOD-2031 at 245±5 OC for 5 sec. MIL-STD-202F METHOD-208 V DS =0.8 X BVDSS, V GS =0V at T A=150 OC for 168 hrs. MIL-STD-883 Continuous operation at max rated T A=25 OC, P C=P C(max) for 500hrs. MIL-STD-883 15P SIG at TA=121 OC for 4 hrs. 5. Pressure Cooker MIL-STD-750D METHOD-1051 6. Temperature Cycling -55 OC to +125OC dwelled for 30 min. and transferred for 5min. total 10 cycles. 7. Thermal Shock 0 OC for 5 min. rise to 100 OC for 5 min. total 10 cycles. 8. Humidity at TA=65 C, RH=98% for 1000hrs. MIL-STD-750D METHOD-1038 9. High Temperature Storage Life at 175OC for 1000 hrs. MIL-STD-750D METHOD-1031 10. Solvent Resistance Dip into Freon at 25OC for 1 min. MIL-STD-202F METHOD-215 http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 MIL-STD-750D METHOD-1056 MIL-STD-750D METHOD-4066-2 O Page 9 Document ID Issued Date DS-231130 2009/02/10 Revised Date - Revision A Page. 9