N-Channel SMD MOSFET Formosa MS 2N7002 List List................................................................................................. 1 Package outline............................................................................... 2 Features.......................................................................................... 2 Mechanical data............................................................................... 2 Maximum ratings ............................................................................ 2 Electrical characteristics................................................................... 3 Rating and characteristic curves........................................................ 4 Pinning information........................................................................... 5 Marking........................................................................................... 5 Suggested solder pad layout............................................................. 5 Packing information.......................................................................... 6 Reel packing.................................................................................... 7 Suggested thermal profiles for soldering processes............................. 7 High reliability test capabilities........................................................... 8 http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 1 Document ID Issued Date Revised Date Revision Page. DS-251104 2008/02/10 2015/06/09 H 8 N-Channel SMD MOSFET Formosa MS 2N7002 60V N-Channel Enhancement Mode MOSFET Package outline SOT-23 Mechanical data 0.020 (0.50) (B) (C) (A) 0.063 (1.60) 0.027 (0.67) 0.013 (0.32) 0.047 (1.20) • Epoxy:UL94-V0 rated flame retardant • Case : Molded plastic, SOT-23 • Terminals : Solder plated, solderable per 0.012 (0.30) .084(2.10) .068(1.70) 0.110 (2.80) 0.120 (3.04) 0.045 (1.15) • Super high density cell design for extremely low R DS(ON) • Exceptional on-resistance and maximum DC current capability • Rugged and reliable • High saturation current capability • In compliance with EU RoHS 2002/95/EC directives. • Suffix "-H" indicates Halogen-free part, ex. 2N7002-H. 0.034 (0.85) Features 0.108 (2.75) 0.051 (1.30) MIL-STD-750, Method 2026 0.003 (0.09) 0.007 (0.18) 0.083 (2.10) 0.035 (0.89) • Mounting Position : Any • Weight : Approximated 0.008 gram Dimensions in inches and (millimeters) Applications • Power Management in Note book • Portable Equipment • Battery Powered System • Load Switch M aximum ratings (AT T o A =25 C unless otherwise noted) PARAMETER MAX. UNIT V DSS 60 V V Symbol Drain-source voltage Drain-gate voltage(R GS = 1.0M Ω ) MIN. TYP. V DGR 60 Drain current - continuous T A=25 C (Note 1) o T A=100 C (Note 1) ID ±115 ±75 -pulsed (Note 2) I DM ±800 o mA Gate–source voltage - continuous - non–repetitive ( tp ≤ 50 μs ) Total power dissipation FR-5 board (Note 3) T A=25 oC V GS ±20 V V GSM ±40 Vpk PD 225 mW 1.8 mW/ C O Derate above 25 C O o Thermal resistance, junction to ambient R θJA 556 Total power dissipation alumina substrate ,( Note 4 ) T A=25 oC PD 300 mW 2.4 mW/ C O Derate above 25 C Thermal resistance, junction to ambient Operation junction and storage temperature range 417 R θJA T J , T STG -55 +150 C/W O o C/W o C Note 1 : The Power Dissipation of the package may result in a lower continuous drain current . 2 : Pulse Test : Pulse Width ≤ 300 μs , Duty Cycle ≤ 2 . 0 %. 3 : FR–5 = 1 . 0 x 0 . 75 x 0 . 062 in . 4 : Alumina = 0 . 4 x 0 . 3 x 0 . 025 in 99 . 5 % alumina http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 2 Document ID Issued Date Revised Date Revision Page. DS-251104 2008/02/10 2015/06/09 H 8 N-Channel SMD MOSFET Formosa MS 2N7002 Electrical characteristics (AT T =25 C unless otherwise noted) o A Off characteristics PARAMETER Drain–source breakdown voltage Zero gate voltage drain current CONDITIONS Symbol MIN. V GS = 0V, I D = 10uA V (BR)DSS 60 TYP. MAX. UNIT 1.0 uA V V DS = 60V, V GS = 0V O V DS = 60V, V GS = 0V, T J = 125 C I DSS 0.5 mA Gate–body leakage current, forward V GS = 20V I GSSF 1 uA Gate–body leakage current, reverse V GS = -20V I GSSR -1 uA CONDITIONS Symbol MIN. TYP. MAX. UNIT Gate threshold voltage V DS = V GS, I D = 250uA V GS(th) 1.0 1.6 2.0 On-state drain current V DS > 20V DS(on), V GS = 10V I D(on) 500 On characteristics (Note 1) PARAMETER Static drain-source on-resistance V GS = 10V, I D = 0.5A V GS = 10V, I D = 0.5A, T J = 125 OC V GS = 5.0V, I D = 50mA O V GS = 5.0V, I D = 50mA, T J = 125 C Drain-source on-voltage V GS = 10V, I D = 0.5A V GS = 5.0V, I D = 50mA Forward transconductance V DS(on) V DS > 2.0V DS(on), I D = 200mA g FS CONDITIONS Symbol 7.5 13.5 7.5 13.5 Ω 3.75 0.375 V 1.4 1.8 - R DS(on) V mA mmhos 80 Dynamic characteristics PARAMETER Input capacitance V DS = 25V, V GS = 0V, f = 1.0MHz Output capacitance Reverse transfer capacitance TYP. MAX. C iss MIN. 17 50 C oss 10 25 C rss 2.5 5.0 TYP. MAX. UNIT pF Switching characteristics (Note 1) PARAMETER Turn-on delay time Turn-off delay time CONDITIONS Symbol V DD = 25V, I D = 500mA, V gen = 10V, R G = 25 Ω , R L = 50 Ω t d(on) MIN. 7 20 t d(off) 11 40 TYP. MAX. UNIT ns Body–drain diode ratings PARAMETER CONDITIONS Symbol Diode forward on-voltage I S = 115mA, V GS = 0V V SD -1.5 V Source current continuous Body diode IS -115 mA I SM -800 mA Source current pulsed MIN. UNIT Note 1: Pules test : Pules width < 300us, duty cycle < 2% Gate Charge Test Circuit Switching Test Circuit V DD V DD RL V IN RL V GS D D V OUT V GS 1mA RG DUT G G RG S http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 3 S Document ID Issued Date Revised Date Revision Page. DS-251104 2008/02/10 2015/06/09 H 8 Rating and characteristic curves (2N7002) Figure 2. Transfer Characteristics Figure 1. Ohmic Region 1.0 TA = 25°C VDS=10V 1.6 I D, DRAIN CURRENT (A) I D, DRAIN CURRENT (A) 2.0 1.8 VGS=10V 1.4 9V 1.2 8V 1.0 0.8 7V 0.6 6V 0.4 5V 0.2 4V 125 ° C 0.6 0.4 0.2 3V 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 0 V DS , DRAIN SOURCE VOLTAGE (V) Figure 3. Temperature versus Static Drain-Source On-Resistance 2.4 2.2 VGS=10V ID=200mA 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0. -60 -20 +20 +60 +100 T , TEMPERATURE( ° C) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 2.0 4.0 6.0 8.0 10 V GS , GATE SOURCE VOLTAGE (V) +140 V GS(th), THRESHOLD VOLTAGE ( NORMALIZED ) R DS(on), STATIC DRAIN - SOURCE ON - RESISTANCE ( NORMALIZED ) 25 ° C -55 ° C 0.8 Page 4 Figure 4. Temperature versus Gate Threshold Voltage 1.2 1.15 VDS=VGS ID=1.0mA 1.1 1.05 1.0 0.95 0.9 0.85 0.8 0.75 0.7 -60 -20 +20 +60 +100 +140 T , TEMPERATURE( ° C) Document ID Issued Date Revised Date Revision Page. DS-251104 2008/02/10 2015/06/09 H 8 N-Channel SMD MOSFET Formosa MS 2N7002 Pinning information Pin Simplified outline Symbol D PinD PinG PinS Drain Drain Gate Source Gate G Source S Marking Marking code 2N7002 702 M Type number (Note 1) Note 1: M = Month code Suggested solder pad layout SOT-23 0.037(0.95) 0.037(0.95) 0.079(2.0) 0.035(0.90) 0.031(0.80) Dimensions in inches and (millimeters) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 5 Document ID Issued Date Revised Date Revision Page. DS-251104 2008/02/10 2015/06/09 H 8 N-Channel SMD MOSFET Formosa MS 2N7002 Packing information P0 P1 d E F B A W P D2 D1 T C W1 D unit:mm Item Symbol Tolerance SOT-23 Carrier width Carrier length Carrier depth Sprocket hole 13" Reel outside diameter 13" Reel inner diameter 7" Reel outside diameter 7" Reel inner diameter Feed hole diameter Sprocket hole position Punch hole position Punch hole pitch Sprocket hole pitch Embossment center Overall tape thickness Tape width Reel width A B C d D D1 D D1 D2 E F P P0 P1 T W W1 0.1 0.1 0.1 0.1 2.0 min 2.0 min 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.3 1.0 3.15 2.77 1.22 1.50 178.00 55.00 13.00 1.75 3.50 4.00 4.00 2.00 0.23 8.00 12.0 Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above. http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 6 Document ID Issued Date Revised Date Revision Page. DS-251104 2008/02/10 2015/06/09 H 8 N-Channel SMD MOSFET Formosa MS 2N7002 Reel packing PACKAGE REEL SIZE SOT-23 7" REEL (pcs) COMPONENT SPACING (m/m) BOX (pcs) INNER BOX (m/m) REEL DIA, (m/m) 3000 4.0 30,000 183*183*123 178 CARTON SIZE (m/m) CARTON (pcs) 383*262*387 APPROX. GROSS WEIGHT (kg) 11.6 240,000 Suggested thermal profiles for soldering processes o o 1.Storage environment: Temperature=5 C ~40 C Humidity=55%±25% 2.Reflow soldering of surface-mount devices Critical Zone TL to TP Tp TP Ramp-up TL TL Tsmax Temperature Tsmin tS Preheat Ramp-down 25 t25o C to Peak Time 3.Reflow soldering Profile Feature Soldering Condition Average ramp-up rate(T L to T P ) o <3 C /sec Preheat -Temperature Min(Tsmin) -Temperature Max(Tsmax) -Time(min to max)(t s ) o 150 C o 200 C 60~120sec Tsmax to T L -Ramp-upRate o <3 C /sec Time maintained above: -Temperature(T L ) -Time(t L ) o 217 C 60~260sec o o 255 C- 0/ + 5 C Peak Temperature(T P ) o Time within 5 C of actual Peak Temperature(t P ) 10~30sec Ramp-down Rate <6 C /sec o o Time 25 C to Peak Temperature http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 <6minutes Page 7 Document ID Issued Date Revised Date Revision Page. DS-251104 2008/02/10 2015/06/09 H 8 N-Channel SMD MOSFET Formosa MS 2N7002 High reliability test capabilities Item Test Conditions Reference Ta = 150℃ Vgs=0 . 8 x BVGSS for 1000hours JESD22-A108-C Ta = 150℃ Vds = 0 . 8 x BVDSS for 1000hours JESD22-A108-C 2. High Temperature Reverse Bias Temp = 245℃ for 5sec JESD22-B102-D 3. Solder ability Test Ta = 121℃/ 100 % RH Pressure = 2Atm for 168hours JESD22-A102-C JESD22-A104-B 5. Temperature Cycle Test - 65℃/ 10min ~ 150℃/ 10min Transfer < 5min . total 1000 cycles. Ta = 85℃ Humidity = 85 % RH for 1000hours JESD22-A101-B 6. Temperature Humidity Test 7. High Temperature Storage Test Ta = 150℃ for 1000hours JESD22-B103-B 1. High Temperature Gate Bias 4. Pressure Cooker Test http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 8 Document ID Issued Date Revised Date Revision Page. DS-251104 2008/02/10 2015/06/09 H 8