Formosa MS

P-Channel SMD MOSFET
Formosa MS
FMBSS84
List
List................................................................................................. 1
Package outline............................................................................... 2
Features.......................................................................................... 2
Mechanical data............................................................................... 2
Maximum ratings ............................................................................. 2
Electrical characteristics................................................................... 3
Rating and characteristic curves........................................................ 4~5
Pinning information........................................................................... 6
Marking........................................................................................... 6
Suggested solder pad layout............................................................. 6
Packing information.......................................................................... 7
Reel packing.................................................................................... 8
Suggested thermal profiles for soldering processes............................. 8
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TEL:886-2-22696661
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Page 1
Document ID
Issued Date
Revised Date
Revision
Page.
DS-231142
2009/08/10
2011/07/21
C
8
P-Channel SMD MOSFET
Formosa MS
FMBSS84
50V P-Channel
Enhancement Mode Power MOSFET
Package outline
SOT-23
(B)
0.020 (0.50)
.084(2.10)
.068(1.70)
0.120 (3.04)
0.110 (2.80)
0.045 (1.15)
DS(ON)
0.012 (0.30)
• L ow on-resistance R
10Ω Max .
• L ow input capacitance : 30pF Typ.
• Fast switching speed : 2.5ns Typ.
• L ow output capacitance : 10pF Typ.
• L ow threshole : 2.0V Max.
• Pb-Free Package is available.
• Suffix "-H" indicates Halogen-free part, ex.FMBSS84-H
0.034 (0.85)
Features
(C)
(A)
0.063 (1.60)
0.027 (0.67)
0.013 (0.32)
0.047 (1.20)
0.108 (2.75)
0.051 (1.30)
0.003 (0.09)
• Epoxy:UL94-V0 rated flame retardant
• Case : Molded plastic, SOT-23
• Terminals : Solder plated, solderable per
0.007 (0.18)
0.083 (2.10)
Mechanical data
0.035 (0.89)
MIL-STD-750, Method 2026
• Mounting Position : Any
• Weight : Approximated 0.008 gram
M aximum ratings (AT T
Dimensions in inches and (millimeters)
o
A
=25 C unless otherwise noted)
Symbol
Limit
Unit
V DS
-50
V
Continuous Drain Current
ID
-130
mA
Pulsed Drain Current ( tp ≤ 10 μs )
I DM
-520
mA
Gate–to–Source Voltage – Continuous
V GS
±20
V
PD
225
mW
R θJA
556
o
TJ
-55 to +150
o
C
-55 to +150
o
C
Parameter
Drain-Source Voltage
O
Total Power Dissipation(T A = 25 C)
Junction-to-Ambient Thermal Resistance
(PCB mounted) ,Note 1)
Operation junction temperature range
Storage temperature range
T STG
C/W
Note: 1. 1-in 2 2oz Cu PCB board
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Page 2
Document ID
Issued Date
Revised Date
Revision
Page.
DS-231142
2009/08/10
2011/07/21
C
8
P-Channel SMD MOSFET
Formosa MS
FMBSS84
Electrical characteristics (At T =25 C unless otherwise noted)
o
A
Characteristic
Symbol
Min
V(BR)DSS
-50
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc , ID = - 250 uAdc)
Zero Gate Voltage Drain Current
(VDS = -25 Vdc, VGS= 0 Vdc)
(VDS = -50 Vdc, VGS= 0 Vdc)
(VDS = -50 Vdc, VGS= 0 Vdc, TJ = 125°C)
IDSS
Gate–Body Leakage Current ( V GS = ± 20 Vdc , V DS = 0 Vdc )
IGSS
Vdc
uAdc
-0.1
-15
-60
±10
nAdc
-2.0
Vdc
10
Ohms
ON CHARACTERISTICS (Note 1.)
Gate–Source Threaded Voltage
(VDS = VGS, ID = -250uAdc)
VGS(th)
Static Drain–to–Source On–Resistance
(VGS = -5.0 Vdc, ID= -100 mAdc)
RDS(on)
Transfer Admittance
(VDS = -25 Vdc, ID= -100 mAdc, f = 1.0 kHz)
|yfs|
-0.8
5.0
50
mS
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = -5.0 Vdc)
Ciss
30
Output Capacitance
(VDS = -5.0 Vdc)
Coss
10
Transfer Capacitance
(VDG = -5.0 Vdc)
Crss
5.0
td(on)
2.5
tr
1.0
pF
SWITCHING CHARACTERISTICS (Note 2.)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
(V
(VDD = –15 Vdc, ID = –2.5 Adc,
RL = 50 Ω )
Fall Time
Gate Charge
td(off)
16
tf
8.0
QT
6000
ns
pC
SOURCE–DRAIN DIODE CHARACTERISTICS
Continuous Current
IS
-0.130
Pulsed Current
ISM
-0.520
Forward Voltage (Note 2.)
VSD
A
-2.5
V
1. Pulse Test: Pulse Width<=300us, Duty Cycle <=2%.
2. Switching characteristics are independent of operating junction temperature.
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Page 3
Document ID
Issued Date
Revised Date
Revision
Page.
DS-231142
2009/08/10
2011/07/21
C
8
Rating and characteristic curves (FMBSS84)
FIG.2 ON-REGION CHARACTERISTICS
FIG.1 TRANSFER CHARACTERISTICS
0.6
0.5
O
25 C
V DS = 10V
ID, DRAIN CURRENT,(A)
0.5
3.25V
0.4
O
-55 C
ID, DRAIN CURRENT(A)
O
150 C
0.4
0.3
0.2
0.1
3.0V
0.3
0.2
2.75V
0.1
2.5V
2.25V
0
0
1
2
3
4
0
FIG.3 ON-RESISTANCE VS DRAIN CURRENT
V GS = 4.5V
8
O
150 C
6
O
25 C
4
O
-55 C
2
0
0.2
0.4
0.6
I D, DRAIN CURRENT (A)
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2
4
8
6
10
V DS, DRAIN TO SOURCE VOLTAGE(V)
R DS(on) , DRAIN- TO- SOURCE RESISTANCE (OHMS)
V GS, GATE TO SOURCE VOLTAGE, (V)
R DS(on) , DRAIN- TO- SOURCE RESISTANCE (OHMS)
V GS = 3.5V
O
T J =25 C
FIG.4 ON-RESISTANCE VS DRAIN CURRENT
7
V GS = 10V
O
150 C
6
5
O
25 C
4
O
-55 C
3
2
0
0.2
0.4
0.6
I D, DRAIN CURRENT (A)
Page 4
Document ID
Issued Date
Revised Date
Revision
Page.
DS-231142
2009/08/10
2011/07/21
C
8
Rating and characteristic curves (FMBSS84)
FIG.6 GATE CHARGE
2
V GS = 10V
I D = 0.52A
1.8
1.6
1.4
V GS = 4.5V
I D = 0.13A
1.2
1
0.8
VGS, GATE TO SOURCE VOLTAGE,(V)
R DS(on), DRAIN-TO-SOURCE RESISTANCE
(NORMALIZED)
FIG.5 ON-RESISTANCE VARIATION
WITH TEMPERATURE
8
7
V DS = 40V
O
T J = 25 C
6
5
4
3
I D = 0.5A
2
1
0
0.6
-55
-5
45
95
0
145
O
T J, JUNCTION TEMPERAURE, ( C)
500
1000
1500
2000
Q T, TOTAL GATE CHARGE, (pC)
FIG.7 BODY DIODE FORWARD VOLTAGE
ID, DIODE CURRENT(A)
1
O
150 C
0.1
O
-55 C
O
25 C
0.01
0.001
0
0.5
1.0
1.5
2.0
2.5
3.0
V SD, DIODE FORWARD VOLTAGE, (V)
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Page 5
Document ID
Issued Date
Revised Date
Revision
Page.
DS-231142
2009/08/10
2011/07/21
C
8
P-Channel SMD MOSFET
Formosa MS
FMBSS84
Pinning information
Pin
Simplified outline
Symbol
D
PinD
PinG
PinS
Drain
Drain
Gate
Source
Gate
G
Source
S
Marking
Type number
Marking code
FMBSS84
PD
Suggested solder pad layout
SOT-23
0.037(0.95)
0.037(0.95)
0.079(2.0)
0.035(0.90)
0.031(0.80)
Dimensions in inches and (millimeters)
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TEL:886-2-22696661
FAX:886-2-22696141
Page 6
Document ID
Issued Date
Revised Date
Revision
Page.
DS-231142
2009/08/10
2011/07/21
C
8
P-Channel SMD MOSFET
Formosa MS
FMBSS84
Packing information
P0
P1
d
E
F
B
A
W
P
D2
D1
T
C
W1
D
unit:mm
Item
Symbol
Tolerance
SOT-23
Carrier width
Carrier length
Carrier depth
Sprocket hole
13" Reel outside diameter
13" Reel inner diameter
7" Reel outside diameter
7" Reel inner diameter
Feed hole diameter
Sprocket hole position
Punch hole position
Punch hole pitch
Sprocket hole pitch
Embossment center
Overall tape thickness
Tape width
Reel width
A
B
C
d
D
D1
D
D1
D2
E
F
P
P0
P1
T
W
W1
0.1
0.1
0.1
0.1
2.0
min
2.0
min
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.3
1.0
3.15
2.77
1.22
1.50
178.00
55.00
13.00
1.75
3.50
4.00
4.00
2.00
0.23
8.00
12.0
Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above.
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TEL:886-2-22696661
FAX:886-2-22696141
Page 7
Document ID
Issued Date
Revised Date
Revision
Page.
DS-231142
2009/08/10
2011/07/21
C
8
P-Channel SMD MOSFET
Formosa MS
FMBSS84
Reel packing
PACKAGE
REEL SIZE
SOT-23
7"
REEL
(pcs)
COMPONENT
SPACING
(m/m)
BOX
(pcs)
INNER
BOX
(m/m)
REEL
DIA,
(m/m)
3000
4.0
30,000
183*183*123
178
CARTON
SIZE
(m/m)
CARTON
(pcs)
383*262*387
APPROX.
GROSS WEIGHT
(kg)
11.6
240,000
Suggested thermal profiles for soldering processes
o
o
1.Storage environment: Temperature=5 C ~40 C Humidity=55%±25%
2.Reflow soldering of surface-mount devices
Critical Zone
TL to TP
Tp
TP
Ramp-up
TL
TL
Tsmax
Temperature
Tsmin
tS
Preheat
Ramp-down
25
t25o C to Peak
Time
3.Reflow soldering
Profile Feature
Soldering Condition
Average ramp-up rate(T L to T P )
o
<3 C /sec
Preheat
-Temperature Min(Tsmin)
-Temperature Max(Tsmax)
-Time(min to max)(t s )
o
150 C
o
200 C
60~120sec
Tsmax to T L
-Ramp-upRate
o
<3 C /sec
Time maintained above:
-Temperature(T L )
-Time(t L )
o
217 C
60~260sec
o
o
255 C- 0/ + 5 C
Peak Temperature(T P )
o
Time within 5 C of actual Peak
Temperature(t P )
10~30sec
Ramp-down Rate
<6 C /sec
o
o
Time 25 C to Peak Temperature
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<6minutes
Page 8
Document ID
Issued Date
Revised Date
Revision
Page.
DS-231142
2009/08/10
2011/07/21
C
8