Formosa MS SMD MOSFET 2N7002W List List................................................................................................. 1 Package outline............................................................................... 2 Features.......................................................................................... 2 Mechanical data............................................................................... 2 Maximum ratings ............................................................................. 2,3 Rating and characteristic curves........................................................ 4,5 Pinning information........................................................................... 6 Marking........................................................................................... 6 Suggested solder pad layout............................................................. 6 Packing information.......................................................................... 7 Reel packing.................................................................................... 8 Suggested thermal profiles for soldering processes............................. 8 High reliability test capabilities........................................................... 9 http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 1 Document ID Issued Date Revised Date Revision Page. DS-251109 2008/02/10 2010/06/10 C 9 Formosa MS SMD MOSFET 2N7002W 60V N-Channel Enhancement Mode MOSFET Package outline solid-state relays drivers, relays, displays, lamps, solenoids, memories, etc. In compliance with EU RoHS 2002/95/EC directives. Suffix "-H" indicates Halogen-free part, ex. 2N7002W-H. 0.016 (0.40) .056(1.40) .048(1.20) (B) (C) (A) 0.054 (1.35) 0.021 (0.53) 0.017 (0.42) 0.046 (1.15) 0.096 (2.40) Mechanical data 0.040 (1.00) 0.004 (0.10) 0.080 (2.00) 0.010 (0.25) • • 0.088 (2.20) • R DS(ON), V GS@10V, I DS@500mA=5 Ω • R DS(ON), V [email protected], I DS@75mA=7.5 Ω • Advanced trench process technology. • High density cell design for ultra low on-resistance. • Specially designed for battery operated system, 0.072 (1.80) 0.026 (0.65)Max Features 0.012 (0.30) SOT-323 0.032 (0.80) • Epoxy:UL94-V0 rated flame retardant • Case : Molded plastic, SOT-323 • Terminals : Solder plated, solderable per Dimensions in inches and (millimeters) MIL-STD-750, Method 2026 • Mounting Position : Any • Weight : Approximated 0.006 gram M aximum ratings (AT T A =25 oC unless otherwise noted) PARAMETER MAX. UNIT Drain-source voltage CONDITIONS V DSS 60 V Drain-gate voltage(G RS = 1.0MΩ) V DGR 60 V ID ±115 I DM ±800 V GS ±20 V GSM ±40 Drain to current-continue Symbol MIN. TYP. mA -pulsed Gate to source voltage-continue V -non-repetitive Total power dissipation 200 mW 1.6 mW/ OC PD Derate above 25 OC Operation junction and storage temperature range T J , T STG Junction to ambient thermal resistance -55 o +150 o 625 R θJA C C/W Single pulse drain-to-source avalanche energy - T J = 25 OC (V DD = 50V, V GS = 10V, I AS = 0.8A, L = 30mH, R G = 25Ω) E AS 9.6 mJ Maximum lead temperature for soldering purposes 1/8" from case for 10 seconds TL 300 o http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 2 C Document ID Issued Date Revised Date Revision Page. DS-251109 2008/02/10 2010/06/10 C 9 Formosa MS SMD MOSFET 2N7002W Electrical characteristics (AT T =25 C unless otherwise noted) o A PARAMETER Drain-source breakdown voltage Drain-source leakage current CONDITIONS Symbol MIN. V GS = 0V, I D = 10uA V (BR)DSS 60 V DS = 60V, V GS = 0V V DS = 60V, V GS = 0V, T J = 125 OC I DSS Gate-source leakage current-forward V GSF = 20V I GSS Gate-source leakage current-reverse V GSF = -20V I GSS V DS = V GS, I D = 250uA Gate threshold voltage* V DS > 20V DS(on), V GS = 10V On-state drain current Static drain-source on-resistance* V GS = 10V, I D = 0.5A V GS = 10V, I D = 0.5A, T C = 125 OC V GS = 5.0V, I D = 50mA V GS = 5.0V, I D = 50mA, T C = 125 OC Drain-source on-voltage* V GS = 10V, I D = 0.5A V GS = 5.0V, I D = 50mA Forward transconductance V DS > 2.0V DS(on), I D = 200mA* Input capacitance V DS = 25V, V GS = 0V, f = 1.0MHz Output capacitance Reverse transfer capacitance Turn-On Delay Time V DD = 25V, I D = 500mA, V gen = 10V, R G = 25Ω, R L = 50Ω* Turn-Off Delay Time V GS(th) 1.0 I D(on) 500 TYP. MAX. V 1.0 uA 0.5 mA 100 nA -100 nA V 2.5 mA 7.5 13.5 7.5 13.5 Ω 3.75 0.375 V R DS(on) V DS(on) g FS UNIT 200 ms C iss 50 C oss 25 C rss 5.0 t d(on) 9 15 t d(off) 21 26 pF ns Diode forward on-voltage I S = 115mA, V GS = 0V V SD -1.2 V Source current continuous Body diode IS -250 mA I SM -800 mA Source current pulsed -0.93 *Pules test : Pules width < 300uS, duty cycle < 2% Gate Charge Test Circuit Switching Test Circuit V DD V DD RL V IN RL V GS D D V OUT V GS 1mA RG DUT G G RG S http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 3 S Document ID Issued Date Revised Date Revision Page. DS-251109 2008/02/10 2010/06/10 C 9 Rating and characteristic curves (2N7002W) FIG.2 TRANSFER CHARACTERISTIC FIG.1 TYPICAL FORWARD CHARACTERISTIC 1.2 V GS = 6V~10V DRAIN TO SOURCE CURRENT,(A) DRAIN TO SOURCE CURRENT,(A) 1.2 5.0V 1.0 0.8 4.0V 0.6 0.4 3.0V 0.2 V DS = 10V 1.0 0.8 0.6 0.4 o 25 C 0.2 0 0 0 1 2 3 4 5 0 1 DRAIN TO SOURCE VOLTAGE, (V) 2 3 4 5 6 GATE TO SOURCE VOLTAGE, (V) FIG.4 ON RESISTANCE VS GATE TO SOURCE VOLTAGE FIG.3 ON RESISTANCE VS DRAIN CURRENT 5 10 4 8 3 ON-RESISTANCE, (ohm) ON-RESISTANCE, (ohm) I D = 500mA V GS = 4.5V 2 V GS = 10V 1 6 o 125 C 4 2 o 25 C 0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 2 3 4 5 6 7 8 9 10 GATE TO SOURCE VOLTAGE, (V) DRAIN current, (A) FIG.5 ON RESISTANCE VS JUNCTION TEMPERATURE ON-RESISTANCE, (ohm) NORMALIZED 2.0 V GS = 10V 1.8 I D = 500mA 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 o JUNCTION TEMPERATURE, ( C) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 4 Document ID Issued Date Revised Date Revision Page. DS-251109 2008/02/10 2010/06/10 C 9 Rating and characteristic curves (2N7002W) FIG.7 GATE CHARGE FIG.6 GATE CHARGE WAVEFORM 10 Vgs Qsw Vgs(th) V DS = 15V GATE TO SOURCE VOLTAGE,(V) Qg 8 I D = 500mA 6 4 2 0 0 Qg(th) Qgs 0.2 0.6 0.8 1.0 GATE CHARGE, (nC) Qg Qgd 0.4 GATE CHARGE WAVEFORM FIG.9 BREAKDOWN VOLTAGE VS JUNCTION TEMPERATURE 73 1.2 I D = 250uA 1.0 0.9 0.8 0.7 I D = 250uA 72 1.1 BREAKDOWN VOLTAGE, (V) THRESHOLD VOLTAGE, (V) NORMALIZED FIG.8 THRESHOLD VOLTAGE VS TEMPERATURE 71 70 69 68 67 66 65 64 0.6 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 o 125 150 o JUNCTION TEMPERATURE, ( C) JUNCTION TEMPERATURE, ( C) FIG.10 SOURCE-DRAIN DIODE FORWARD VOLTAGE 10 SOURCE CURRENT,(A) V GS = 0V 1 o 25 C o 125 C 0.1 o -55 C 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 SOURCE TO DRAIN VOLTAGE, (V) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 5 Document ID Issued Date Revised Date Revision Page. DS-251109 2008/02/10 2010/06/10 C 9 Formosa MS SMD MOSFET 2N7002W Pinning information Pin Simplified outline Symbol D PinD PinG PinS Drain Drain Gate Source Gate G Source S Marking Type number 2N7002W Marking code 72 Suggested solder pad layout SOT-323 0.025(0.65) 0.025(0.65) 0.063(1.6) 0.031(0.80) 0.023(0.60) Dimensions in inches and (millimeters) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 6 Document ID Issued Date Revised Date Revision Page. DS-251109 2008/02/10 2010/06/10 C 9 Formosa MS SMD MOSFET 2N7002W Packing information P0 P1 d E F B A W P D2 D1 T C W1 D unit:mm Item Symbol Tolerance SOT-323 Carrier width Carrier length Carrier depth Sprocket hole 13" Reel outside diameter 13" Reel inner diameter 7" Reel outside diameter 7" Reel inner diameter Feed hole diameter Sprocket hole position Punch hole position Punch hole pitch Sprocket hole pitch Embossment center Overall tape thickness Tape width Reel width A B C d D D1 D D1 D2 E F P P0 P1 T W W1 0.1 0.1 0.1 0.1 2.0 min 2.0 min 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.3 1.0 1.47 2.95 1.15 1.50 178.00 62.00 13.00 1.75 3.50 4.00 4.00 2.00 0.23 8.00 11.40 Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above. http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 7 Document ID Issued Date Revised Date Revision Page. DS-251109 2008/02/10 2010/06/10 C 9 Formosa MS SMD MOSFET 2N7002W Reel packing PACKAGE SOT-323 REEL SIZE 7" REEL (pcs) COMPONENT SPACING (m/m) BOX (pcs) INNER BOX (m/m) REEL DIA, (m/m) 3,000 4.0 30,000 183*183*123 178 CARTON SIZE (m/m) 382*262*387 CARTON (pcs) APPROX. GROSS WEIGHT (kg) 240,000 9.5 Suggested thermal profiles for soldering processes 1.Storage environment: Temperature=5 oC ~40 oC Humidity=55%±25% 2.Reflow soldering of surface-mount devices Critical Zone TL to TP Tp TP Ramp-up TL TL Tsmax Temperature Tsmin tS Preheat Ramp-down 25 t25o C to Peak Time 3.Reflow soldering Profile Feature Soldering Condition Average ramp-up rate(T L to T P ) o <3 C /sec Preheat -Temperature Min(Tsmin) -Temperature Max(Tsmax) -Time(min to max)(t s ) 150 oC 200 oC 60~120sec Tsmax to T L -Ramp-upRate <3 oC/sec Time maintained above: -Temperature(T L ) -Time(t L ) 217 oC 60~260sec 255 oC-0/+5 oC Peak Temperature(T P ) Time within 5 oC of actual Peak Temperature(t P ) 10~30sec Ramp-down Rate <6 oC/sec Time 25 oC to Peak Temperature <6minutes http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 8 Document ID Issued Date Revised Date Revision Page. DS-251109 2008/02/10 2010/06/10 C 9 Formosa MS SMD MOSFET 2N7002W High reliability test capabilities Item Test Conditions Reference Ta=150℃ Vgs=0.8 x BVGSS for 1000hours JESD22-A108-C Ta=150℃ Vds=0.8 x BVDSS for 1000hours JESD22-A108-C 2. High Temperature Reverse Bias 3. Solder ability Test Temp= 245℃ for 5sec 1. High Temperature Gate Bias JESD22-B102-D Ta=121℃/100% RH Pressure=2Atm for 168hours JESD22-A102-C JESD22-A104-B 5. Temperature Cycle Test - 65℃/ 10min~150℃/10min Transfer<5min . total 1000 cycles. 6. Temperature Humidity Test Ta=85℃ Humidity=85% RH for 1000hours 7. High Temperature Storage Test Ta=150℃ for 1000hours 4. Pressure Cooker Test http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 9 JESD22-A101-B JESD22-B103-B Document ID Issued Date Revised Date Revision Page. DS-251109 2008/02/10 2010/06/10 C 9