Formosa MS Chip Silicon Rectifier HFM201 THRU HFM207 List List................................................................................................. 1 2 Package outline............................................................................... 2 2 Features.......................................................................................... 2 3 4 Mechanical data............................................................................... 2 4 5 Maximum ratings ............................................................................. 2 6 6 Rating and characteristic curves........................................................ 3 7 Pinning information........................................................................... 4 Marking........................................................................................... 4 Suggested solder pad layout............................................................. 4 Packing information.......................................................................... 5 Reel packing.................................................................................... 6 Suggested thermal profiles for soldering processes............................. 6 High reliability test capabilities...........................................................7 http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 1 Document ID Issued Date Revised Date Revision DS-121304 2008/02/10 2009/05/07 C Page. 7 Formosa MS Chip Silicon Rectifier HFM201 THRU HFM207 2.0A Surface Mount High Effciency Rectifiers-50-1000V Package outline Features SMA • Batch process design, excellent power dissipation offers • • • • • • 0.196(4.9) 0.180(4.5) better reverse leakage current and thermal resistance. Low profile surface mounted application in order to optimize board space. High current capability. Ultrafast recovery time for high efficiency. High surge current capability. Glass passivated chip junction. Lead-free parts meet RoHS requirments. 0.012(0.3) Typ. 0.106(2.7) 0.091(2.3) Mechanical data 0.068(1.7) 0.060(1.5) 0.032(0.8) Typ. • Epoxy:UL94-V0 rated flame retardant • Case : Molded plastic, JEDEC DO-214AC / SMA • Terminals : Solder plated, solderable per 0.032 (0.8) Typ. Dimensions in inches and (millimeters) MIL-STD-750, Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.05 gram Maximum ratings (AT T A=25 oC unless otherwise noted) PARAMETER CONDITIONS O Forward rectified current Ambient temperature = 50 C Forward surge current 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) V R = V RRM T A = 25 OC Reverse current UNIT IO 2.0 A I FSM 50 A Junction to ambient Diode junction capacitance f=1MHz and applied 4V DC reverse voltage Storage temperature V RMS*2 (V) *3 VR (V) HFM201 50 35 50 HFM202 100 70 100 HFM203 200 140 200 HFM204 400 280 400 HFM205 600 420 600 HFM206 800 560 800 HFM207 1000 700 1000 http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 *4 VF (V) 1.00 *5 T RR (nS) TYP. 5.0 Operating temperature T J, ( OC) uA 150 R èJA 20 CJ 25 T STG *1 V RRM (V) MIN. IR V R = V RRM T A = 100 OC Thermal resistance SYMBOLS MAX. Symbol O pF O +175 -65 C/W C *1 Repetitive peak reverse voltage *2 RMS voltage 50 *3 Continuous reverse voltage 1.30 -55 to +150 *4 Maximum forward voltage 1.70 75 Page 2 *5 Reverse recovery time Document ID Issued Date Revised Date Revision DS-121304 2008/02/10 2009/05/07 C Page. 7 Rating and characteristic curves (HFM201 THRU HFM207) FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE FIG.1-TYPICAL FORWARD CHARACTERISTICS FM 20 7 4 HF M2 0 5~ H FM 20 H 1~ 1.0 HF M2 0 HF M2 0 .1 2.4 2.0 1.6 Single Phase 1.2 Half Wave 60Hz Resistive Or Inductive Load 0.8 P.C.B. MOUNTED ON 0.3" * 0.3" (8.0mm * 8.0mm) 0.4 COPPER PAD AREAS 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE ( C) TJ=25 C Pulse Width 300us 1% Duty Cycle .01 .6 .8 1.0 1.2 1.4 1.6 1.8 FORWARD VOLTAGE,(V) FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTICS 50W NONINDUCTIVE 10W NONINDUCTIVE ( ) (+) D.U.T. 25Vdc (approx.) PEAK FORWARD SURGE CURRENT,(A) .001 .4 FIG.4-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PULSE GENERATOR (NOTE 2) ( ) 50 40 30 Sine Wave 20 JEDEC method 10 1 5 (+) 1W NONINDUCTIVE 8.3ms Single Half TJ=25 C 0 50 10 100 NUMBER OF CYCLES AT 60Hz OSCILLISCOPE (NOTE 1) NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms. FIG.5-TYPICAL JUNCTION CAPACITANCE 175 trr JUNCTION CAPACITANCE,(pF) INSTANTANEOUS FORWARD CURRENT,(A) 3 AVERAGE FORWARD CURRENT,(A) 10 | | | | | | | | +0.5A 0 -0.25A -1.0A 120 100 80 60 40 20 1cm SET TIME BASE FOR 50 / 10ns / cm 0 .01 .05 .1 .5 1 5 10 50 100 Page. REVERSE VOLTAGE,(V) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 3 Document ID Issued Date Revised Date Revision DS-121304 2008/02/10 2009/05/07 C 7 Formosa MS Chip Silicon Rectifier HFM201 THRU HFM207 Pinning information Pin Pin1 Pin2 Simplified outline cathode anode 1 Symbol 2 1 2 Marking Type number Marking code HFM201 HFM202 HFM203 HFM204 HFM205 HFM206 HFM207 H21 H22 H23 H24 H25 H26 H27 Suggested solder pad layout C A B Dimensions in inches and (millimeters) PACKAGE A B C SMA 0.110 (2.80) 0.063 (1.60) 0.087 (2.20) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 4 Document ID Issued Date Revised Date Revision DS-121304 2008/02/10 2009/05/07 C Page. 7 Formosa MS Chip Silicon Rectifier HFM201 THRU HFM207 Packing information P0 P1 d E F B A W P D2 D1 T C W1 D unit:mm Item Symbol Tolerance SMA Carrier width Carrier length Carrier depth Sprocket hole 13" Reel outside diameter 13" Reel inner diameter 7" Reel outside diameter 7" Reel inner diameter Feed hole diameter Sprocket hole position Punch hole position Punch hole pitch Sprocket hole pitch Embossment center Overall tape thickness Tape width Reel width A B C d D D1 D D1 D2 E F P P0 P1 T W W1 0.1 0.1 0.1 0.1 2.0 min 2.0 min 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.3 1.0 2.80 5.00 1.90 1.50 330.00 50.00 178.00 62.00 13.00 1.75 5.50 4.00 4.00 2.00 0.23 12.00 18.00 Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above. http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 5 Document ID Issued Date Revised Date Revision DS-121304 2008/02/10 2009/05/07 C Page. 7 Formosa MS Chip Silicon Rectifier HFM201 THRU HFM207 Reel packing PACKAGE REEL SIZE REEL (pcs) COMPONENT SPACING (m/m) BOX (pcs) INNER BOX (m/m) REEL DIA, (m/m) CARTON SIZE (m/m) APPROX. GROSS WEIGHT (kg) CARTON (pcs) SMA 7" 2,000 4.0 20,000 183*170*183 178 382*356*387 160,000 16.0 SMA 13" 7,500 4.0 15,000 337*337*37 330 350*330*360 120,000 14.2 Suggested thermal profiles for soldering processes 1.Storage environment: Temperature=10 oC~35 oC Humidity=65%±15% 2.Reflow soldering of surface-mount devices Critical Zone T L to T P tP TP Ramp-up TL tL Temperature T smax T smin TS ts Preheat 25 Ramp-down t25 oC to Peak Wave Soldering IR Reflow Time 3.Flow (wave)soldering (solder dipping) Profile Feature Soldering Condition Average ramp-up rate(T L to TP ) <3oC/sec Preheat -Temperature Min(Tsmin) -Temperature Max(Tsmax) -Time(min to max)(t s ) 100oC 150oC 60~120sec Tsmax to TL -Ramp-upRate <3oC/sec Time maintained above: -Temperature(TL ) -Time(tL ) 183oC 60~150sec 255oC-0/+5 oC Peak Temperature(T P ) Time within 5 oC of actual Peak Temperature(tP ) 10~30sec Ramp-down Rate <6 oC/sec Time 25oC to Peak Temperature <6minutes http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 6 Document ID Issued Date Revised Date Revision DS-121304 2008/02/10 2009/05/07 C Page. 7 Formosa MS Chip Silicon Rectifier HFM201 THRU HFM207 High reliability test capabilities Item Test Conditions Reference O 1. Solder Resistance at 260±5 C for 10±2sec. immerse body into solder 1/16"±1/32" MIL-STD-750D METHOD-2031 2. Solderability at 245±5 OC for 5 sec. MIL-STD-202F METHOD-208 3. High Temperature Reverse Bias V R=80% rate at T J=150 OC for 168 hrs. MIL-STD-750D METHOD-1026 4. Forward Operation Life Rated average rectifier current at T=25 OC for 500hrs. MIL-STD-750D METHOD-1027 T A = 25 OC, I F = I O On state: power on for 5 min. off state: power off for 5 min. on and off for 500 cycles. MIL-STD-750D METHOD-1036 5. Intermittent Operation Life 6. Pressure Cooker 15P SIG at TA=121 OC for 4 hrs. 7. Temperature Cycling -55 OC to +125OC dwelled for 30 min. and transferred for 5min. total 10 cycles. 8. Thermal Shock 9. Forward Surge 10. Humidity 11. High Temperature Storage Life 12. Solvent Resistance http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 MIL-STD-750D METHOD-1051 MIL-STD-750D METHOD-1056 0 OC for 5 min. rise to 100 OC for 5 min. total 10 cycles. MIL-STD-750D METHOD-4066-2 8.3ms single half sine-wave superimposed on rated load, one surge. at TA=65 OC, RH=98% for 1000hrs. MIL-STD-750D METHOD-1038 at 175OC for 1000 hrs. MIL-STD-750D METHOD-1031 Dip into Freon at 25OC for 1 min. MIL-STD-202F METHOD-215 Page 7 Document ID Issued Date Revised Date Revision DS-121304 2008/02/10 2009/05/07 C Page. 7